Operation and modeling of the MOS transistor:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Boston [u.a.]
McGraw-Hill
1999
|
| Ausgabe: | 2nd ed. |
| Schlagworte: | |
| Beschreibung: | XX, 620 S. graph. Darst. |
| ISBN: | 0070655235 |
Internformat
MARC
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| 100 | 1 | |a Tsividis, Yannis |d 1946- |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Operation and modeling of the MOS transistor |c Yannis Tsividis |
| 250 | |a 2nd ed. | ||
| 264 | 1 | |a Boston [u.a.] |b McGraw-Hill |c 1999 | |
| 300 | |a XX, 620 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 7 | |a MOS |2 swd | |
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Metal oxide semiconductor field-effect transistors |x Mathematical models | |
| 650 | 4 | |a Metal oxide semiconductors |x Mathematical models | |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
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Datensatz im Suchindex
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| author | Tsividis, Yannis 1946- |
| author_facet | Tsividis, Yannis 1946- |
| author_role | aut |
| author_sort | Tsividis, Yannis 1946- |
| author_variant | y t yt |
| building | Verbundindex |
| bvnumber | BV013829851 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.99.M44 |
| callnumber-search | TK7871.99.M44 |
| callnumber-sort | TK 47871.99 M44 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ST 190 |
| ctrlnum | (OCoLC)39042960 (OCoLC)245702277 (DE-599)BVBBV013829851 |
| dewey-full | 621.3815/284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/284 |
| dewey-search | 621.3815/284 |
| dewey-sort | 3621.3815 3284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Informatik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 2nd ed. |
| format | Book |
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| id | DE-604.BV013829851 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:52:46Z |
| institution | BVB |
| isbn | 0070655235 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009458585 |
| oclc_num | 39042960 245702277 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM |
| owner_facet | DE-91 DE-BY-TUM |
| physical | XX, 620 S. graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| publisher | McGraw-Hill |
| record_format | marc |
| spelling | Tsividis, Yannis 1946- Verfasser aut Operation and modeling of the MOS transistor Yannis Tsividis 2nd ed. Boston [u.a.] McGraw-Hill 1999 XX, 620 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier MOS swd Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Metal oxide semiconductors Mathematical models MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS (DE-588)4130209-6 gnd rswk-swf MOS (DE-588)4130209-6 s DE-604 MOS-FET (DE-588)4207266-9 s 1\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Tsividis, Yannis 1946- Operation and modeling of the MOS transistor MOS swd Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Metal oxide semiconductors Mathematical models MOS-FET (DE-588)4207266-9 gnd MOS (DE-588)4130209-6 gnd |
| subject_GND | (DE-588)4207266-9 (DE-588)4130209-6 |
| title | Operation and modeling of the MOS transistor |
| title_auth | Operation and modeling of the MOS transistor |
| title_exact_search | Operation and modeling of the MOS transistor |
| title_full | Operation and modeling of the MOS transistor Yannis Tsividis |
| title_fullStr | Operation and modeling of the MOS transistor Yannis Tsividis |
| title_full_unstemmed | Operation and modeling of the MOS transistor Yannis Tsividis |
| title_short | Operation and modeling of the MOS transistor |
| title_sort | operation and modeling of the mos transistor |
| topic | MOS swd Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Metal oxide semiconductors Mathematical models MOS-FET (DE-588)4207266-9 gnd MOS (DE-588)4130209-6 gnd |
| topic_facet | MOS Mathematisches Modell Metal oxide semiconductor field-effect transistors Mathematical models Metal oxide semiconductors Mathematical models MOS-FET |
| work_keys_str_mv | AT tsividisyannis operationandmodelingofthemostransistor |