Noise in semiconductor devices: modeling and simulation
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2001
|
| Schriftenreihe: | Springer series in advanced microelectronics
7 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturverz. S. 201 - 208 |
| Beschreibung: | XXXI, 213 S. graph. Darst. |
| ISBN: | 3540665838 |
Internformat
MARC
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| 100 | 1 | |a Bonani, Fabrizio |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Noise in semiconductor devices |b modeling and simulation |c Fabrizio Bonani ; Giovanni Ghione |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2001 | |
| 300 | |a XXXI, 213 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Springer series in advanced microelectronics |v 7 | |
| 490 | 0 | |a Physics and astronomy online library | |
| 500 | |a Literaturverz. S. 201 - 208 | ||
| 650 | 7 | |a Bruit électronique - Modèles mathématiques |2 ram | |
| 650 | 7 | |a Circuits intégrés - Simulation, Méthodes de |2 ram | |
| 650 | 7 | |a Semiconducteurs - Modèles mathématiques |2 ram | |
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Electronic noise |x Mathematical models | |
| 650 | 4 | |a Integrated circuits |x Simulation methods | |
| 650 | 4 | |a Semiconductors |x Mathematical models | |
| 650 | 0 | 7 | |a Großsignalverhalten |0 (DE-588)4158301-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kleinsignalverhalten |0 (DE-588)4164165-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
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| 700 | 1 | |a Ghione, Giovanni |e Verfasser |4 aut | |
| 830 | 0 | |a Springer series in advanced microelectronics |v 7 |w (DE-604)BV012563021 |9 7 | |
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Datensatz im Suchindex
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|---|---|
| adam_text |
CONTENTS
LIST
OF
SYMBOLS
.
XIII
1.
NOISE
IN
SEMICONDUCTOR
DEVICES
.
1
1.1
FLUCTUATIONS
IN
SEMICONDUCTORS
.
1
1.2
MICROSCOPIC
NOISE
SOURCES
IN
SEMICONDUCTORS
.
3
1.2.1
VELOCITY
FLUCTUATIONS
.
4
1.2.2
POPULATION
FLUCTUATIONS
.
13
1.2.3
1/F-LIKE
FLUCTUATIONS
.
24
1.3
BACK
TO
BASICS:
THE
FUNDAMENTAL
APPROACH
.
26
1.4
EQUIVALENT
REPRESENTATION
OF
NOISY
DEVICES
.
30
1.4.1
CIRCUIT-ORIENTED
DEVICE
NOISE
PARAMETERS
.
30
1.4.2
NYQUIST
THEOREM
FOR
LINEAR
PASSIVE
MULTI-PORTS
.
33
1.4.3
SYSTEM-ORIENTED
DEVICE
NOISE
PARAMETERS:
THE
NOISE
FIGURE
.
34
2.
NOISE
ANALYSIS
TECHNIQUES
.
39
2.1
SEMICONDUCTOR
DEVICE
PHYSICAL
MODELS
FOR
NOISE
MODELING
.
39
2.1.1
THE
DRIFT-DIFFUSION
MODEL
.
41
2.1.2
THE
MODEL
SOLUTION
.
43
2.2
LANGEVIN
APPROACH
TO
NOISE
ANALYSIS
.
45
2.2.1
GREEN
'
S
FUNCTION
SOLUTION
TECHNIQUES
.
45
2.2.2
APPLICATION
OF
THE
GREEN
'
S
FUNCTION
TECHNIQUE
TO
THE
DRIFT-DIFFUSION
MODEL
.
47
2.2.3
THE
GREEN
'
S
FUNCTION
APPROACH
AND
OTHER
NOISE
ANALYSIS
TECHNIQUES
.
51
2.2.4
TRAP-ASSISTED
GR
NOISE
.
52
2.2.5
NOISE
ANALYSIS
THROUGH
NON-STATIONARY
TRANSPORT
MODELS
.
57
2.3
APPLICATIONS
OF
THE
GREEN
'
S
FUNCTION
APPROACH:
COMPACT
DEVICE
NOISE
MODELING
.
58
2.3.1
THERMAL
NOISE
IN
A
LINEAR
SEMICONDUCTOR
RESISTOR.
.
58
2.3.2
COMPACT
NOISE
MODELS
FOR
FIELD-EFFECT
TRANSISTORS
.
59
2.3.3
MEASUREMENT-ORIENTED
NOISE
MODELS
FOR
FIELD-EFFECT
TRANSISTORS
.
67
X
CONTENTS
2.3.4
COMPACT
NOISE
MODELS
FOR
BIPOLAR
JUNCTION
DEVICES
.
69
3.
PHYSICS-BASED
SMALL-SIGNAL
NOISE
SIMULATION
.
77
3.1
NUMERICAL
TREATMENT
OF
PHYSICS-BASED
DEVICE
MODELS:
A
REVIEW
.
77
3.1.1
FINITE-BOX
DISCRETIZATION
OF PHYSICS-BASED
MODELS
.
78
3.1.2
NUMERICAL
SOLUTION
OF
THE
DISCRETIZED
MODEL
AND
SMALL-SIGNAL
ANALYSIS
.
85
3.2
NUMERICAL
NOISE
SIMULATION:
FORMULATION
.
88
3.2.1
EVALUATING
THE
DISCRETIZED
GREEN
'
S
FUNCTIONS
.
90
3.2.2
EVALUATING
THE
CORRELATION
SPECTRA
.
91
3.3
EFFICIENT
EVALUATION
OF
THE
GREEN
'
S
FUNCTIONS
.
92
3.3.1
THE
ADJOINT
APPROACH
.
92
3.3.2
THE
GENERALIZED
ADJOINT
APPROACH
.
97
3.3.3
EXTENSIONS
OF
THE
GENERALIZED
ADJOINT
APPROACH
.
99
4.
RESULTS
AND
CASE
STUDIES
.
101
4.1
RESISTORS
.
102
4.1.1
NOISE
IN
A
DOPED
SEMICONDUCTOR
RESISTOR
.
102
4.1.2
NOISE
IN
A
QUASI-INTRINSIC
RESISTOR
.
105
4.1.3
GR
NOISE
IN
SEMICONDUCTOR
SAMPLES
.
109
4.2
SEMICONDUCTOR
DIODES
.
113
4.2.1
NOISE
MODELING
OF
PN
JUNCTIONS
.
113
4.2.2
A
2D
PN
DIODE
.
116
4.3
FIELD-EFFECT
TRANSISTORS
.
122
4.3.1
MESFET
NOISE
MODELING
.
122
4.3.2
MOSFET
NOISE
MODELING
.
126
4.4
BIPOLAR
JUNCTION
TRANSISTORS
.
136
5.
NOISE
IN
LARGE-SIGNAL
OPERATION
.
143
5.1
A
SYSTEM-ORIENTED
INTRODUCTION
.
143
5.2
CIRCUIT-ORIENTED
LARGE-SIGNAL
NOISE
ANALYSIS
.
149
5.2.1
FREQUENCY-DOMAIN
LARGE-SIGNAL
ANALYSIS
OF
CIRCUITS
.
150
5.2.2
SMALL-SIGNAL
LARGE-SIGNAL
ANALYSIS
OF
CIRCUITS
.
153
5.2.3
LARGE-SIGNAL
NOISE
ANALYSIS
OF
CIRCUITS
.
157
5.3
PHYSICS-BASED
LARGE-SIGNAL
AND
SSLS
DEVICE
ANALYSIS
.
162
5.3.1
LS
ANALYSIS
.
162
5.3.2
SSLS
ANALYSIS
.
164
5.4
LS
PHYSICS-BASED
NOISE
ANALYSIS
.
168
5.4.1
THE
LS-MODULATED
MICROSCOPIC
NOISE
SOURCES
.
169
5.4.2
EVALUATION
OF
THE
CGF
.
171
5.5
RESULTS
.
172
CONTENTS
XI
A.
APPENDIX:
REVIEW
OF
PROBABILITY
THEORY
AND
RANDOM
PROCESSES
.
177
A.L
FUNDAMENTALS
OF
PROBABILITY
THEORY
.
177
A.
2
RANDOM
PROCESSES
.
185
A.
3
CORRELATION
SPECTRA
AND
GENERALIZED
HARMONIC
ANALYSIS
OF
STOCHASTIC
PROCESSES
.
190
A.
4
LINEAR
TRANSFORMATIONS
OF
STOCHASTIC
PROCESSES
.
192
A.
5
CYCLOSTATIONARY
STOCHASTIC
PROCESSES
.
194
A.
6
A
GLIMPSE
OF
MARKOV
STOCHASTIC
PROCESSES
.
197
REFERENCES
.
201
INDEX
.
209 |
| any_adam_object | 1 |
| author | Bonani, Fabrizio Ghione, Giovanni |
| author_facet | Bonani, Fabrizio Ghione, Giovanni |
| author_role | aut aut |
| author_sort | Bonani, Fabrizio |
| author_variant | f b fb g g gg |
| building | Verbundindex |
| bvnumber | BV013823877 |
| callnumber-first | T - Technology |
| callnumber-label | TK7867 |
| callnumber-raw | TK7867.5 |
| callnumber-search | TK7867.5 |
| callnumber-sort | TK 47867.5 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 5070 ZN 4035 |
| ctrlnum | (OCoLC)47126849 (DE-599)BVBBV013823877 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV013823877 |
| illustrated | Illustrated |
| indexdate | 2024-11-22T17:24:12Z |
| institution | BVB |
| isbn | 3540665838 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009454072 |
| oclc_num | 47126849 |
| open_access_boolean | |
| owner | DE-29T DE-706 DE-522 DE-11 |
| owner_facet | DE-29T DE-706 DE-522 DE-11 |
| physical | XXXI, 213 S. graph. Darst. |
| publishDate | 2001 |
| publishDateSearch | 2001 |
| publishDateSort | 2001 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in advanced microelectronics |
| series2 | Springer series in advanced microelectronics Physics and astronomy online library |
| spelling | Bonani, Fabrizio Verfasser aut Noise in semiconductor devices modeling and simulation Fabrizio Bonani ; Giovanni Ghione Berlin [u.a.] Springer 2001 XXXI, 213 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in advanced microelectronics 7 Physics and astronomy online library Literaturverz. S. 201 - 208 Bruit électronique - Modèles mathématiques ram Circuits intégrés - Simulation, Méthodes de ram Semiconducteurs - Modèles mathématiques ram Mathematisches Modell Electronic noise Mathematical models Integrated circuits Simulation methods Semiconductors Mathematical models Großsignalverhalten (DE-588)4158301-2 gnd rswk-swf Kleinsignalverhalten (DE-588)4164165-6 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Rauschen (DE-588)4048606-0 gnd rswk-swf Numerisches Verfahren (DE-588)4128130-5 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s Rauschen (DE-588)4048606-0 s Kleinsignalverhalten (DE-588)4164165-6 s Numerisches Verfahren (DE-588)4128130-5 s DE-604 Großsignalverhalten (DE-588)4158301-2 s Ghione, Giovanni Verfasser aut Springer series in advanced microelectronics 7 (DE-604)BV012563021 7 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009454072&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Bonani, Fabrizio Ghione, Giovanni Noise in semiconductor devices modeling and simulation Springer series in advanced microelectronics Bruit électronique - Modèles mathématiques ram Circuits intégrés - Simulation, Méthodes de ram Semiconducteurs - Modèles mathématiques ram Mathematisches Modell Electronic noise Mathematical models Integrated circuits Simulation methods Semiconductors Mathematical models Großsignalverhalten (DE-588)4158301-2 gnd Kleinsignalverhalten (DE-588)4164165-6 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Rauschen (DE-588)4048606-0 gnd Numerisches Verfahren (DE-588)4128130-5 gnd |
| subject_GND | (DE-588)4158301-2 (DE-588)4164165-6 (DE-588)4113826-0 (DE-588)4048606-0 (DE-588)4128130-5 |
| title | Noise in semiconductor devices modeling and simulation |
| title_auth | Noise in semiconductor devices modeling and simulation |
| title_exact_search | Noise in semiconductor devices modeling and simulation |
| title_full | Noise in semiconductor devices modeling and simulation Fabrizio Bonani ; Giovanni Ghione |
| title_fullStr | Noise in semiconductor devices modeling and simulation Fabrizio Bonani ; Giovanni Ghione |
| title_full_unstemmed | Noise in semiconductor devices modeling and simulation Fabrizio Bonani ; Giovanni Ghione |
| title_short | Noise in semiconductor devices |
| title_sort | noise in semiconductor devices modeling and simulation |
| title_sub | modeling and simulation |
| topic | Bruit électronique - Modèles mathématiques ram Circuits intégrés - Simulation, Méthodes de ram Semiconducteurs - Modèles mathématiques ram Mathematisches Modell Electronic noise Mathematical models Integrated circuits Simulation methods Semiconductors Mathematical models Großsignalverhalten (DE-588)4158301-2 gnd Kleinsignalverhalten (DE-588)4164165-6 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Rauschen (DE-588)4048606-0 gnd Numerisches Verfahren (DE-588)4128130-5 gnd |
| topic_facet | Bruit électronique - Modèles mathématiques Circuits intégrés - Simulation, Méthodes de Semiconducteurs - Modèles mathématiques Mathematisches Modell Electronic noise Mathematical models Integrated circuits Simulation methods Semiconductors Mathematical models Großsignalverhalten Kleinsignalverhalten Halbleiterbauelement Rauschen Numerisches Verfahren |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009454072&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV012563021 |
| work_keys_str_mv | AT bonanifabrizio noiseinsemiconductordevicesmodelingandsimulation AT ghionegiovanni noiseinsemiconductordevicesmodelingandsimulation |