Proceedings of the Workshop on Wide Bandgap Pipolar Devices: January 24 - 28, 1999, Marriott Bay Point Resort Village, Panama City Beach, FL
Gespeichert in:
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| Format: | Tagungsbericht Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
Oxford
Pergamon
2000
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| Schriftenreihe: | Solid state electronics
44,2 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Einzelaufnahme eines Zeitschr.-H. |
| Beschreibung: | IV, 381 S. Ill., graph. Darst. |
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Datensatz im Suchindex
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|---|---|
| adam_text | PERGAMON
Solid-State Electronics
44 (1999)
iii
-iv
SOLID-STATE
ELECTRONICS
SPECIAL ISSUE
PROCEEDINGS
OF THE WORKSHOP ON
WIDE
BANDGAP
BIPOLAR DEVICES
CONTENTS
Preface to special issue
.............................................................................................................. 193
K. F. Brennan. E. Bellotti. M. Farahmand. J. Haralson II. P. P.
Riden.
J. D.
Albrecht and A.
Sutandi: Materials
theory based modeling of wide band gap
semiconductors: from basic properties to devices
.................................................................. 195
M. S. Shur. A. D. Bykhovski and R. Gaska: Two-dimensional hole gas induced by
piezoelectric and pyroelectric charges
...................................................................................... 205
P. M. Asbeck. E. T. Yu. S. S.
Lau.
W.
Sun. X. Dang and
С
Shi: Enhancement of base
conductivity via the piezoelectric effect in AlGaN GaN HBTs
........................................... 211
Z. Z.
Bandić.
P.
M. Bridger.
E.
С.
Piquette and T.
С.
McGill:
The values of
minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar
devices
.......................................................................................................................................... 221
W. A. Doolittle. S. Kang and A. Brown: MBE growth of high quality GaN on
LiGaOi for high frequency, high power electronic applications
......................................... 229
F. Ren. J. Han. R. Hickman. J. M. Van Hove. P. P. Chow. J. J. Klaassen.
J. R. LaRoche. K. B. Jung. H. Cho, X.
A. Cao.
S. M.
Donovan.
R. F. Kopí.
R. G.
Wilson.
A. G.
Baca.
R. J. Shul. L.
Zhang.
C. G. Willison. C. R. Abervythy
and S. J. Pearton: GaN AlGaN HBT
fabrication
.............................................................. 239
E. Alekseev and D.
Pavlidis: DC and high-frequency performance of
AlGaN GaN
Heterojunction Bipolar Transistors.........................................................................................
245
D. J. H.
Lambert.
D. E. Lin and R. D.
Depuis: Simulation
of the electrical
characteristics of AlGaN GaN heterojunction bipolar transistors
...................................... 25?
W. J.
Schafe.
H.
Wu. C. J. Praharaj. M. Murphy. T. Eustls.
B. Foi tz.
O. Amb c her
and L. F. Eastman: GaN SiC heterojunction bipolar transistors
...................................... 259
INDEXU)
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PERGAMON
ISSN
Specilli
Issue Solid-Suite
Eicel
rouies
44
1
2ШЮ
ι
iii-iv
Β.
Van Zeghbroec k. S.-S.
Chang.
R. L.
Waters.
J.
Torvik
and J.
Pankove:
GaN SiC
HBTs and related issues
............................................................................................................
265
M. Topí. F.
Cavas.
B. K.
Meyer.
B. Kempe. A. Krtschil. H. Wíttľ, P.
Veit
and
J.
Christen:
GaN SiC
heterojunctions grown by LP-CVD
............................................... 271
T. P. Cnow, V. Kiiľmka. J. Fedison. N. Ramlngul. K. Matocha. Y.
Tang and
R. J.
Gitmann: SiC and GaN bipolar
power devices
......................................................... 277
Л. К.
Ac¡
rwal.
S. Seshadri. M.
MacMillan. S. S. Mani. J.
Casady. P.
Sånger and
P. Shah: 4H SiC
p
-η
diodes
and gate turnoff thyristors for high-power, high-
temperature
applications
........................................................................................................... 303
V. R.
V
atui
lya
and M. H.
White: Characterization and performance comparison
ot the power
DIMOS
structure fabricated with a reduced thermal budget in 4H and
6H-SÍC
......................................................................................................................................... 309
A.
Ei.ASSER.
M. Ghezzo.
N.
Krishnamurthy. J. Kretchmer. A. W. Clock.
D. M. Brown and T. P. Chow: Switching characteristics of silicon carbide power PiN
diodes
........................................................................................................................................... 317
A. Q. Hi
ang
and B. Zhang: Comparing SiC switching power devices: MOSFET. NPN
transistor and GTO thyristor
................................................................................................... 325
F. V n. J. H. Zhao and G. H.
Olsen:
Demonstration of the first
4H-SÍC
avalanche
photodiodes
................................................................................................................................. 341
L.
C o.
В.
Li and
J. H.
Zhao: Characterization of
4H-SÍC
gate turn-off thyristor
........ 347
P. B. Shah. K. A. Jones. A. K. Agarwal and S. Seshadri: In-depth analysis of SiC
GTO thyristor performance using numerical simulations
.................................................... 353
M. Lades and G. Wachl
tka:
Electrothermal analysis of SiC power devices using
ph sicall -based device simulation
........................................................................................... 359
A. Ai.i-ksov. A. Denisenko and E. Kohn: Prospects of bipolar diamond devices
......... 369
R
Ніс
км
w
J. M. Van Hove. P. P. Chow. J. J. Klaassen. A. M. Wowchak.
C. J.
Poi li
y. D. J.
King. F. Ren.
C. R. Abernathy. S. J. Pearton. K. B.
Jung.
H.
Сно
and J. R.
La Roche:
GaN P N
junction issues and developments
..................................... 377
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PERGAMON
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|
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| spelling | Workshop on Wide Bandgap Bipolar Devices 1999 Panama City, Fla. Verfasser (DE-588)5512039-8 aut Proceedings of the Workshop on Wide Bandgap Pipolar Devices January 24 - 28, 1999, Marriott Bay Point Resort Village, Panama City Beach, FL Oxford Pergamon 2000 IV, 381 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Solid state electronics 44,2 Einzelaufnahme eines Zeitschr.-H. Wide-bandgap Halbleiter (DE-588)4273153-7 gnd rswk-swf Bipolares Halbleiterbauelement (DE-588)4145665-8 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1999 Panama City Fla. gnd-content Bipolares Halbleiterbauelement (DE-588)4145665-8 s Wide-bandgap Halbleiter (DE-588)4273153-7 s DE-604 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009437455&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the Workshop on Wide Bandgap Pipolar Devices January 24 - 28, 1999, Marriott Bay Point Resort Village, Panama City Beach, FL Wide-bandgap Halbleiter (DE-588)4273153-7 gnd Bipolares Halbleiterbauelement (DE-588)4145665-8 gnd |
| subject_GND | (DE-588)4273153-7 (DE-588)4145665-8 (DE-588)1071861417 |
| title | Proceedings of the Workshop on Wide Bandgap Pipolar Devices January 24 - 28, 1999, Marriott Bay Point Resort Village, Panama City Beach, FL |
| title_auth | Proceedings of the Workshop on Wide Bandgap Pipolar Devices January 24 - 28, 1999, Marriott Bay Point Resort Village, Panama City Beach, FL |
| title_exact_search | Proceedings of the Workshop on Wide Bandgap Pipolar Devices January 24 - 28, 1999, Marriott Bay Point Resort Village, Panama City Beach, FL |
| title_full | Proceedings of the Workshop on Wide Bandgap Pipolar Devices January 24 - 28, 1999, Marriott Bay Point Resort Village, Panama City Beach, FL |
| title_fullStr | Proceedings of the Workshop on Wide Bandgap Pipolar Devices January 24 - 28, 1999, Marriott Bay Point Resort Village, Panama City Beach, FL |
| title_full_unstemmed | Proceedings of the Workshop on Wide Bandgap Pipolar Devices January 24 - 28, 1999, Marriott Bay Point Resort Village, Panama City Beach, FL |
| title_short | Proceedings of the Workshop on Wide Bandgap Pipolar Devices |
| title_sort | proceedings of the workshop on wide bandgap pipolar devices january 24 28 1999 marriott bay point resort village panama city beach fl |
| title_sub | January 24 - 28, 1999, Marriott Bay Point Resort Village, Panama City Beach, FL |
| topic | Wide-bandgap Halbleiter (DE-588)4273153-7 gnd Bipolares Halbleiterbauelement (DE-588)4145665-8 gnd |
| topic_facet | Wide-bandgap Halbleiter Bipolares Halbleiterbauelement Konferenzschrift 1999 Panama City Fla. |
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