Semiconductor devices: physics and technology
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York [u.a.]
Wiley
2002
|
| Ausgabe: | 2. ed. |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | VIII, 564 S. Ill., graph. Darst. |
| ISBN: | 0471333727 9780471333722 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV013697517 | ||
| 003 | DE-604 | ||
| 005 | 20141027 | ||
| 007 | t | ||
| 008 | 010425s2002 ad|| |||| 00||| eng d | ||
| 020 | |a 0471333727 |9 0-471-33372-7 | ||
| 020 | |a 9780471333722 |9 978-0-471-33372-2 | ||
| 035 | |a (OCoLC)247983020 | ||
| 035 | |a (DE-599)BVBBV013697517 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-29T |a DE-20 |a DE-703 |a DE-91 |a DE-384 |a DE-1050 |a DE-19 |a DE-355 |a DE-91G |a DE-634 |a DE-83 |a DE-11 |a DE-859 |a DE-522 | ||
| 050 | 0 | |a TK7871.85 | |
| 082 | 0 | |a 621.3815/2 | |
| 084 | |a UB 2455 |0 (DE-625)145316: |2 rvk | ||
| 084 | |a UP 2800 |0 (DE-625)146366: |2 rvk | ||
| 084 | |a UX 2150 |0 (DE-625)146948: |2 rvk | ||
| 084 | |a ZN 4800 |0 (DE-625)157408: |2 rvk | ||
| 084 | |a ZN 5410 |0 (DE-625)157456: |2 rvk | ||
| 084 | |a ELT 300f |2 stub | ||
| 084 | |a ELT 270f |2 stub | ||
| 100 | 1 | |a Sze, S. M. |d 1936-2023 |e Verfasser |0 (DE-588)133681998 |4 aut | |
| 245 | 1 | 0 | |a Semiconductor devices |b physics and technology |c S. M. Sze |
| 250 | |a 2. ed. | ||
| 264 | 1 | |a New York [u.a.] |b Wiley |c 2002 | |
| 300 | |a VIII, 564 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterphysik |0 (DE-588)4113829-6 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4123623-3 |a Lehrbuch |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Halbleiterphysik |0 (DE-588)4113829-6 |D s |
| 689 | 2 | |8 1\p |5 DE-604 | |
| 856 | 4 | |u http://www3.ub.tu-berlin.de/ihv/001770752.pdf |3 Inhaltsverzeichnis | |
| 856 | 4 | 2 | |m Digitalisierung UB Regensburg |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009360586&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-009360586 | |
Datensatz im Suchindex
| _version_ | 1806052683267702784 |
|---|---|
| adam_text |
Contents
Preface
iv
*-
CHAPTER
1
Introduction
1
1.1
Semiconductor Devices
1
1.2
Semiconductor Technology
7
Summary
13
PART I
_
SEMICONDUCTOR PHYSICS
►
CHAPTER
2
Energy Bands and Carrier Concentration in
Thermal Equilibrium
17
2.1
Semiconductor Materials
17
2.2
Basic Crystal Structure
19
2.3
Basic Crystal Growth Technique
24
2.4
Valence Bonds
27
2.5
Energy Bands
28
2.6
Intrinsic Carrier Concentration
34
2.7
Donors and Acceptors
37
Summary
44
*■
CHAPTER
3
Carrier Transport Phenomena
47
3.1
Carrier Drift
48
3.2
Carrier Diffusion
57
3.3
Generation and Recombination
Processes
60
3.4
Continuity Equation
66
3.5
Thermionic Emission Process
72
3.6
Tunneling Process
73
3.7
High-Field Effects
75
Summary
80
PART II
_
SEMICONDUCTOR DEVICES
*
CHAPTER
4
p-n Junction
84
4.1
Basic Fabrication Steps
85
4.2
Thermal Equilibrium Condition
88
4.3
Depletion Region
93
4.4
Depletion Capacitance
100
4.5
Current-Voltage Characteristics
104
4.6
Charge Storage and Transient Behavior
4.7
Junction Breakdown
117
4.8
Heterojunction
124
Summary
127
114
*■
CHAPTER
5
Bipolar Transistor and Related Devices
130
5.1
The Transistor Action
131
5.2
Static Characteristics of Bipolar
Transistor
137
5.3
Frequency Response and Switching of
Bipolar Transistor
146
5.4
The Heterojunction Bipolar Transistor
151
5.5
The
Thyristor
and Related Power
Devices
156
Summary
165
»■
CHAPTER
6
MOSFET and Related Devices
169
6.1
The
MOS
Diode
170
6.2
MOSFET Fundamentals
186
6.3
MOSFET Scaling
199
6.4
CMOS and BiCMOS
205
6.5
MOSFET on Insulator
209
6.6
MOS
Memory Structures
214
6.7
The Power MOSFET
218
Summary
220
*■
CHAPTER
7
MESFET and Related Devices
224
7.1
Metal-Semiconductor Contacts
225
7.2
MESFET
237
7.3
MODFET
246
Summary
251
*
CHAPTER
8
Microwave Diodes, Quantum-Effect, and
Hot-Electron Devices
254
8.1
Basic Microwave Technology
255
8.2
Tunnel Diode
259
8.3
IMPATT Diode
261
8.4
Transferred-Electron Devices
264
8.5
Quantum-Effect Devices
270
8.6
Hot-Electron Devices
275
Summary
278
viii Contents
►
CHAPTER
9
Photonic Devices
282
9.1
Radiative Transitions and Optical
Absorption
282
9.2
light-Emitting Diodes
288
9.3
Semiconductor Laser
298
9.4
Photodetector
311
9.5
Solar Cell
318
Summary
328
PART III
_
SEMICONDUCTOR TECHNOLOGY
*
CHAPTER
10
Crystal Growth and Epitaxy
332
10.1
Silicon Crystal Growth from
the Melt
333
10.2
Silicon Float-Zone Process
339
10.3
GaAs Crystal-Growth Techniques
343
10.4
Material Characterization
347
10.5
Epitaxial-Growth Techniques
354
10.6
Structures and Defects in
Epitaxial Layers
361
Summary
365
►
CHAPTER
11
Film Formation
369
11.1
Thermal Oxidation
370
11.2
Dielectric Deposition
378
11.3
Polysilieon Deposition
388
11.4
Metallization
390
Summary
400
*
CHAPTER
12
Lithography and Etching
404
12.1
Optical Lithography
404
12.2
Next-Generation Lithographic
Methods
418
12.3
Wet Chemical Etching
426
12.4
Dry Etching
431
12.5
Microelectromechanical Systems
443
Summary
447
*·
CHAPTER
13
Impurity Doping
452
13.1
Basic Diffusion Process
453
13.2
Extrinsic Diffusion
462
13.3
Diffusion-Related Processes
466
13.4
Range of Implanted Ions
469
13.5
Implant Damage and Annealing
477
13.6
Implantation-Related Processes
481
Summary
485
>■
CHAPTER
14
Integrated Devices
489
14.1
Passive Components
491
14.2
Bipolar Technology
496
14.3
MOSFET Technology
503
14.4
MESFET Technology
519
14.5
Challenges for Microelectronics
522
Summary
527
>
APPENDIX A
List of Symbols
531
►
APPENDIX
В
International Systems of Units (SI Units)
533
►
APPENDIX
С
Unit Prefixes
534
►
APPENDIX
D
Greek Alphabet
535
*■
APPENDIX
E
Physical Constants
536
**
APPENDIX
F
Properties of Important Element and Binary
Compound Semiconductors at
300
К
537
►
APPENDIX
G
Properties of Si and GaAs at
300
К
538
*■
APPENDIX
H
Derivation of the Density of States in a
Semiconductor
539
*■
APPENDIX I
Derivation of Recombination Rate for Indirect
Recombination
541
*■
APPENDIX
J
Calculation of the Transmission Coefficient for
a Symmetric Resonant-Tunneling Diode
543
►
APPENDIX
К
Basic Kinetic Theory of Gases
545
*■
APPENDIX
L
Answers to Selected Problems
547
Index
551 |
| any_adam_object | 1 |
| author | Sze, S. M. 1936-2023 |
| author_GND | (DE-588)133681998 |
| author_facet | Sze, S. M. 1936-2023 |
| author_role | aut |
| author_sort | Sze, S. M. 1936-2023 |
| author_variant | s m s sm sms |
| building | Verbundindex |
| bvnumber | BV013697517 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UB 2455 UP 2800 UX 2150 ZN 4800 ZN 5410 |
| classification_tum | ELT 300f ELT 270f |
| ctrlnum | (OCoLC)247983020 (DE-599)BVBBV013697517 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 2. ed. |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 c 4500</leader><controlfield tag="001">BV013697517</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20141027</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">010425s2002 ad|| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0471333727</subfield><subfield code="9">0-471-33372-7</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780471333722</subfield><subfield code="9">978-0-471-33372-2</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)247983020</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV013697517</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield><subfield code="a">DE-20</subfield><subfield code="a">DE-703</subfield><subfield code="a">DE-91</subfield><subfield code="a">DE-384</subfield><subfield code="a">DE-1050</subfield><subfield code="a">DE-19</subfield><subfield code="a">DE-355</subfield><subfield code="a">DE-91G</subfield><subfield code="a">DE-634</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-11</subfield><subfield code="a">DE-859</subfield><subfield code="a">DE-522</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UB 2455</subfield><subfield code="0">(DE-625)145316:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 2800</subfield><subfield code="0">(DE-625)146366:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UX 2150</subfield><subfield code="0">(DE-625)146948:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4800</subfield><subfield code="0">(DE-625)157408:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 5410</subfield><subfield code="0">(DE-625)157456:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 300f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 270f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Sze, S. M.</subfield><subfield code="d">1936-2023</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)133681998</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Semiconductor devices</subfield><subfield code="b">physics and technology</subfield><subfield code="c">S. M. Sze</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">2. ed.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York [u.a.]</subfield><subfield code="b">Wiley</subfield><subfield code="c">2002</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">VIII, 564 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4123623-3</subfield><subfield code="a">Lehrbuch</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2=" "><subfield code="u">http://www3.ub.tu-berlin.de/ihv/001770752.pdf</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung UB Regensburg</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009360586&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-009360586</subfield></datafield></record></collection> |
| genre | (DE-588)4123623-3 Lehrbuch gnd-content |
| genre_facet | Lehrbuch |
| id | DE-604.BV013697517 |
| illustrated | Illustrated |
| indexdate | 2024-07-31T00:34:18Z |
| institution | BVB |
| isbn | 0471333727 9780471333722 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009360586 |
| oclc_num | 247983020 |
| open_access_boolean | |
| owner | DE-29T DE-20 DE-703 DE-91 DE-BY-TUM DE-384 DE-1050 DE-19 DE-BY-UBM DE-355 DE-BY-UBR DE-91G DE-BY-TUM DE-634 DE-83 DE-11 DE-859 DE-522 |
| owner_facet | DE-29T DE-20 DE-703 DE-91 DE-BY-TUM DE-384 DE-1050 DE-19 DE-BY-UBM DE-355 DE-BY-UBR DE-91G DE-BY-TUM DE-634 DE-83 DE-11 DE-859 DE-522 |
| physical | VIII, 564 S. Ill., graph. Darst. |
| publishDate | 2002 |
| publishDateSearch | 2002 |
| publishDateSort | 2002 |
| publisher | Wiley |
| record_format | marc |
| spelling | Sze, S. M. 1936-2023 Verfasser (DE-588)133681998 aut Semiconductor devices physics and technology S. M. Sze 2. ed. New York [u.a.] Wiley 2002 VIII, 564 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf (DE-588)4123623-3 Lehrbuch gnd-content Halbleiterbauelement (DE-588)4113826-0 s DE-604 Halbleitertechnologie (DE-588)4158814-9 s Halbleiterphysik (DE-588)4113829-6 s 1\p DE-604 http://www3.ub.tu-berlin.de/ihv/001770752.pdf Inhaltsverzeichnis Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009360586&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Sze, S. M. 1936-2023 Semiconductor devices physics and technology Halbleitertechnologie (DE-588)4158814-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiterphysik (DE-588)4113829-6 gnd |
| subject_GND | (DE-588)4158814-9 (DE-588)4113826-0 (DE-588)4113829-6 (DE-588)4123623-3 |
| title | Semiconductor devices physics and technology |
| title_auth | Semiconductor devices physics and technology |
| title_exact_search | Semiconductor devices physics and technology |
| title_full | Semiconductor devices physics and technology S. M. Sze |
| title_fullStr | Semiconductor devices physics and technology S. M. Sze |
| title_full_unstemmed | Semiconductor devices physics and technology S. M. Sze |
| title_short | Semiconductor devices |
| title_sort | semiconductor devices physics and technology |
| title_sub | physics and technology |
| topic | Halbleitertechnologie (DE-588)4158814-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiterphysik (DE-588)4113829-6 gnd |
| topic_facet | Halbleitertechnologie Halbleiterbauelement Halbleiterphysik Lehrbuch |
| url | http://www3.ub.tu-berlin.de/ihv/001770752.pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009360586&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT szesm semiconductordevicesphysicsandtechnology |
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