Modeling and simulation of wide bandgap semiconductor devices: 4H/6H-SiC
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
2000
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | München, Techn. Univ., Diss., 2000 |
| Beschreibung: | V, 156 Bl. Ill., graph. Darst. |
Internformat
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Datensatz im Suchindex
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| adam_text |
C'OIITCWTS
ZUSAMMENFASSUNG 1
ABSTRACT 3
1 INTRODUCTION 5
1.1 WIDE BANDGAP SEMICONDUCTOR MATERIALS. 5
1.2 NUMERICAL SIMULATION OF SIC DEVICES . 7
1.3 SCOPE OF THIS WORK. 8
2 ELECTROTHERMAL TRANSPORT MODEL 10
2.1 ELECTROTHERMAL TRANSPORT THEORY. 11
2.1.1 LOCAL THERMAL EQUILIBRIUM AND FUNDAMENTAL GIBBS RELATIONS . 11
2.1.2 GIBBS-, FERMI-, AND BOLTZMANN DISTRIBUTIONS . 13
2.1.2.1 FREE CARRIER DENSITIES. 14
2.1.2.2 IMPURITIES. 15
2.1.3 BALANCE EQUATIONS AND CONSTITUTIVE CURRENT RELATIONS. 16
2.2 CARRIER EMISSION AND CAPTURE KINETICS . 17
2.2.1 QUASI-STATIC APPROXIMATION./. 18
2.2.2 CARRIER EMISSION AND CAPTURE COEFFICIENTS. 19
2.2.3 CLASSIFICATION OF IMPURITIES. 20
2.2.3.1 GENERATION-RECOMBINATION CENTERS. 20
2.2.3.2 DOPANTS AND DEEP TRAPS. 21
2.3 GENERIC MODEL FOR ANISOTROPIC MATERIAL PROPERTIES. 22
2.4 EXTENDED ELECTROTHERMAL DRIFT-DIFFUSION MODEL. 24
2.5 BOUNDARY CONDITIONS. 26
I
BIBLIOGRAFISCHE INFORMATIONEN
HTTP://D-NB.INFO/961496401
CONTENTS
II
3 MODELING OF 4H/6H-SIC MATERIAL PROPERTIES 28
3.1 GENERAL MATERIAL CHARACTERISTICS AND PROCESS TECHNOLOGY.
28
3.2 EFFECTIVE DENSITY OF STATES AND INTRINSIC CARRIER DENSITY. 30
3.3 DIELECTRIC CONSTANT. 34
3.4 FREE CARRIER MOBILITIES. 34
3.4.1 ACOUSTIC-PHONON AND IONIZED-IMPURITY SCATTERING. 35
3.4.2 CARRIER-CARRIER AND SURFACE SCATTERING. 36
3.4.3 HIGH-FIELD DRIFT VELOCITY SATURATION. 37
3.5 THERMAL PROPERTIES. 38
3.6 CARRIER GENERATION AND RECOMBINATION. 40
3.6.1 GENERALIZED FIELD-DEPENDENT SHOCKLEY-READ-HALL STATISTICS^. 40
3.6.2 AUGER RECOMBINATION. 42
3.6.3 IMPACT IONIZATION. 42
4 INCOMPLETE IONIZATION OF DOPANTS 44
4.1 ELECTROTHERMAL EQUILIBRIUM. 45
4.2 MEASUREMENT OF IONIZATION TIME CONSTANTS. 49
4.2.1 THERMAL ADMITTANCE SPECTROSCOPY (TAS). 51
4.2.2 SIMULATION OF TAS: SERIAL RESISTANCES AND DOPING PROFILES. 52
4.2.2.1 SIMULATION OF TAS SPECTRA. 54
4.2.2.2 EVALUATION OF "FREEZE-OUT SIGNAL". 56
4.2.2.3 CONCEPT OF TAS APPLIED TO THE HIGHLY-DOPED PART OF A PN-JUNCTION
. . 57
4.2.2.4 EVALUATION OF TAS SIGNALS ARISING FROM THE HIGHLY-DOPED PART OF
A
PN-JUNCTION. 59
4.2.2.5 INFLUENCE OF DOPING PROFILE.,. 62
4.2.3 DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS). 63
4.2.3.1 BASIC THEORY. 64
4.2.3.2 INFLUENCE OF SERIAL RESISTANCE . 66
4.2.3.3 DLTS AT THE HIGHLY-DOPED PART OF A PN-JUNCTION. 68
4.3 IONIZATION ENERGY AND CAPTURE CROSS SECTIONS OF N, AL, AND B IN
4H/6H-SIC. 68
CONTENTS
FFL
5 SIMULATION OF 4H/6H-SIC DEVICES 70
5.1 THE PN-JUNCTION - EVALUATION OF MATERIAL PARAMETERS AND MODELS. 70
5.1.1 BASIC CONSIDERATIONS. 72
5.1.1.1 STATISTICAL LIMIT. 73
5.1.1.2 VALIDITY OF THE QUASI-STATIC APPROXIMATION. . 74
5.1.1.3 NUMERICAL INSTABILITIES. 75
5.1.2 FORWARD CHARACTERISTICS . 76
5.1.2.1 INFLUENCE OF SURFACE RECOMBINATION. 76
5.1.2.2 TEMPERATURE DEPENDENCE OF SRH LIFETIMES. 77
5.1.2.3 FIELD-DEPENDENT SRH LIFETIMES. 79
5.1.2.4 IV CHARACTERISTICS AT HIGH CURRENT RATINGS . 80
5.1.2.5 DISCUSSION OF MATERIAL PARAMETERS. 80
5.1.2.6 SUMMARY. 82
5.1.3 REVERSE CHARACTERISTICS. 82
5.1.3.1 TEMPERATURE ACTIVATION OF REVERSE CURRENT. 83
5.1.3.2 COUPLED DEFECT-LEVEL GENERATION CURRENT. 84
5.2 THE JFET - CONCEPT OF INVERSE MODELING . 86
5.2.1 CHARACTERIZATION OF IMPLANTED-GATE 6H-SIC JFET. 86
5.2.1.1 BASIC CHARACTERISTICS . 87
5.2.1.2 INHOMOGENEOUS CHANNEL PROPERTIES. 90
5.2.1.3 TEMPERATURE DEPENDENCE OF CHANNEL PROPERTIES. 93
5.2.2 EXTRACTION OF CHANNEL LENGTH OF BURIED-GATE 6H-SIC JFET . 94
5.3 IMPACT OF ANISOTROPIC MATERIAL PROPERTIES ON DEVICE CHARACTERISTICS.
96
5.3.1 PLANAR 6H-SIC PN-DIODE CHARACTERISTICS. 97
5.3.2 UMOS AND LATERAL JFET CHARACTERISTICS. 99
5.3.3 DIMOS CHARACTERISTICS.100
5.3.4 VERTICAL HIGH-POWER JFET CHARACTERISTICS .103
5.3.5 SUMMARY.103
5.4 DYNAMICS OF INCOMPLETE IONIZATION OF DOPANTS .105
5.4.1 PN-JUNCTION CHARACTERISTICS .106
5.4.2 DYNAMIC PUNCH-THROUGH.108
5.4.3 IMPACT IONIZATION AND DYNAMIC IONIZATION.113
5.4.3.1 NON-PUNCH-THROUGH DIODE DESIGN.114
CONTENTS
IV
5.4.3.2 PUNCH-THROUGH DIODE DESIGN.115
5.4.3.3 INHOMOGENEOUS COMPENSATION PROFILE.117
5.4.3.4 SUMMARY.118
6 CONCLUSIONS 121
6.1 INCOMPLETE IONIZATION OF DOPANTS. 121
6.2 IONIZATION TIME CONSTANTS MEASURED BY DLTS AND THERMAL ADMITTANCE
SPECTROSCOPY . . 122
6.3 ANISOTROPIC MATERIAL PROPERTIES.123
6.4 INVESTIGATIONS ON PN-DIODE AND JFET CHARACTERISTICS .123
6.5 SUMMARY AND OUTLOOK.124
A MATERIAL PARAMETERS FOR 4H- AND 6H-SIC - 126
B NUMERICAL METHODS 128
B.L DISCRETIZATION.128
B.2 CALCULATION OF JUNCTION ADMITTANCE. 129
C GENERATION-RECOMBINATION MODELS 132
D ANALYTICAL MODEL OF DUAL-GATE JFET CHARACTERISTICS 134
E MAXIMUM DYNAMIC DEPLETION REGION WIDTH 137
F LIST OF SYMBOLS 139
BIBLIOGRAPHY
142 |
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| discipline | Physik Elektrotechnik |
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| indexdate | 2024-10-09T18:09:28Z |
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| language | English |
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| spelling | Lades, Martin 1965- Verfasser (DE-588)123074363 aut Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Martin Lades 2000 V, 156 Bl. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Techn. Univ., Diss., 2000 Elektronischer Transport (DE-588)4210733-7 gnd rswk-swf Sperrschicht-FET (DE-588)4213138-8 gnd rswk-swf pn-Übergang (DE-588)4174949-2 gnd rswk-swf Elektronisches Bauelement (DE-588)4014360-0 gnd rswk-swf Numerisches Verfahren (DE-588)4128130-5 gnd rswk-swf Störstelle (DE-588)4193400-3 gnd rswk-swf Wide-bandgap Halbleiter (DE-588)4273153-7 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Siliciumcarbid (DE-588)4055009-6 s Elektronisches Bauelement (DE-588)4014360-0 s Numerisches Verfahren (DE-588)4128130-5 s DE-604 Wide-bandgap Halbleiter (DE-588)4273153-7 s Störstelle (DE-588)4193400-3 s Elektronischer Transport (DE-588)4210733-7 s pn-Übergang (DE-588)4174949-2 s Sperrschicht-FET (DE-588)4213138-8 s 1\p DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009357601&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Lades, Martin 1965- Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Elektronischer Transport (DE-588)4210733-7 gnd Sperrschicht-FET (DE-588)4213138-8 gnd pn-Übergang (DE-588)4174949-2 gnd Elektronisches Bauelement (DE-588)4014360-0 gnd Numerisches Verfahren (DE-588)4128130-5 gnd Störstelle (DE-588)4193400-3 gnd Wide-bandgap Halbleiter (DE-588)4273153-7 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4210733-7 (DE-588)4213138-8 (DE-588)4174949-2 (DE-588)4014360-0 (DE-588)4128130-5 (DE-588)4193400-3 (DE-588)4273153-7 (DE-588)4055009-6 (DE-588)4113937-9 |
| title | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC |
| title_auth | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC |
| title_exact_search | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC |
| title_full | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Martin Lades |
| title_fullStr | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Martin Lades |
| title_full_unstemmed | Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC Martin Lades |
| title_short | Modeling and simulation of wide bandgap semiconductor devices |
| title_sort | modeling and simulation of wide bandgap semiconductor devices 4h 6h sic |
| title_sub | 4H/6H-SiC |
| topic | Elektronischer Transport (DE-588)4210733-7 gnd Sperrschicht-FET (DE-588)4213138-8 gnd pn-Übergang (DE-588)4174949-2 gnd Elektronisches Bauelement (DE-588)4014360-0 gnd Numerisches Verfahren (DE-588)4128130-5 gnd Störstelle (DE-588)4193400-3 gnd Wide-bandgap Halbleiter (DE-588)4273153-7 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Elektronischer Transport Sperrschicht-FET pn-Übergang Elektronisches Bauelement Numerisches Verfahren Störstelle Wide-bandgap Halbleiter Siliciumcarbid Hochschulschrift |
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