Extended abstracts of the 1996 International Conference on Solid State Devices and Materials: August 26 - 29, 1996, Yokohama, Pacifico Yokohama
Gespeichert in:
| Körperschaft: | |
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| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Tokyo
Japan Soc. of Applied Physics
1996
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXXV, 885 S. Ill., graph. Darst. |
| ISBN: | 4930813735 |
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| 245 | 1 | 0 | |a Extended abstracts of the 1996 International Conference on Solid State Devices and Materials |b August 26 - 29, 1996, Yokohama, Pacifico Yokohama |
| 264 | 1 | |a Tokyo |b Japan Soc. of Applied Physics |c 1996 | |
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| adam_text | IMAGE 1
EXTENDED ABSTRACTS OF
THE 1996 INTERNATIONAL CONFERENCE ON
SOLID STATE DEVICES AND MATERIALS
AUGUST 26-29, 1996
YOKOHAMA PACIFICO YOKOHAMA
UNIVERSITATSBIBLIOTHEK HANNOVER TECHNISCHE INFORMATIONSBIBLIOTHEK
SPONSORED BY
THE JAPAN SOCIETY OF APPLIED PHYSICS
TECHNICAL COSPONSORED BY
IEEE ELECTRON DEVICES SOCIETY
IN COOPERATION WITH
THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS OF
JAPAN IEEE TOKYO SECTION THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN
THE ELECTROCHEMICAL SOCIETY OF JAPAN THE INSTITUTE OF TELEVISION
ENGINEERS OF JAPAN
IMAGE 2
CONTENTS
AUGUST 26, MONDAY
MAIN HALL
A-0: OPENING SESSION (10:30-12:15)
10:30 (0)
10:40 (1)
11:20 (2)
12:00 (3)
WELCOME ADDRESS H. KUKIMOTO, ORGANIZING COMMITTEE CHAIRPERSON FUTURE
CMOS SCALING-APPROACHING THE LIMITS? (INVITED) R.H. DENNARD, IBM, U.S.A
1
AN ATTEMPT FOR INDUSTRIAL-ACADEMIC-GOVERNMENTAL JOINT RESEARCH IN THE
BASIC STUDIES OF DEVICE, MATERIAL AND PROCESS -RESEARCH ON ULTIMATE
MANIPULATION OF ATOMS AND MOLECULES AT THE NATIONAL INSTITUTE FOR
ADVANCED INTERDISCIPLINARY RESEARCH- (INVITED)
Y. SUEMATSU, NAIR 4
SSDM AWARDS PRESENTATION
ROOM A
A-L: MOSFET CHARACTERIZATION (14:00-15:30)
14:00 (1) ATOMIC-SCALE AND HIERARCHICAL MODELING FOR NANO-ELECTRONICS
(INVITED) R.W. DUTTON, E.C. KAN, S. ONGA* AND T. OKADA*, STANFORD UNIV.,
AND *TOSHIBA, JAPAN, U.S A 7
14:30 (2) NEW METHOD OF EXTRACTING INVERSION LAYER THICKNESS AND CHARGE
PROFILE AND ITSIMPACT ON SCALED MOSFETS T. TANAKA, T. SUGII AND C. HU*,
FUJITSU LABS., AND *UNIV. CALIFORNIA, U.S.A 10
14:50 (3) A NOVEL CONDUCTANCE MEASUREMENT TECHNIQUE FOR PROFILING THE
LATERAL LDD N-DOPING CONCENTRATIONS OF SUBMICRON MOS DEVICES
S.S. CHUNG, G.H. LEE, S.M. CHENG AND M.S. LIANG*, NAT L CHIAO TUNG
UNIV., AND TAIWAN SEMICONDUCTOR MANUFACTURING, TAIWAN 13
15:10 (4) A NEW OBSERVATION OF THE REVERSE SHORT CHANNEL EFFECT IN
SUBMICRON N-MOSFET BY USING GATE-INDUCED DRAIN LEAKAGE CURRENT
MEASUREMENT S.M. CHENG, S.S. CHUNG AND M.S. LIANG*, NAT L CHIAO TUNG
UNIV., AND *TAI VAN SEMI CONDUCTOR MANUFACTURING, TAIWAN 16
A-2: ULTRA-SMALL MOSFETS (15:50-17:20)
15:50 (1) AN APPROACH FOR MIGRATING TO LOW VOLTAGE AND LOW POWER ULSIS
(INVITED) E. TAKEDA, HITACHI 19
16:20 (2) PROPOSAL OFPSEUDO SOURCEAND DRAIN MOSFETS AND EVALUATION FOR
10-NM GATE MOSFETS H. KAWAURA, T. SAKAMOTO, T. BABA, Y. OCHIAI, J.
FUJITA, S. MATSUI AND J. SONE, NEC 22 16:40 (3) SELF-ALIGNED CONTROL OF
THRESHOLD VOLTAGES IN 0.1 PM NMOSFETS H. KURATA, AND T. SUGII, FUJITSU
LABS 25
17:00 (4) THREE-TERMINAL SILICON ESAKI TUNNELING DEVICE J. KOGA, AND A.
TORIUMI, TOSHIBA 28
XVI1
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ROOM B
B-L: MICRO-PROCESS (14:00-16:10)
14:00 (1) LITHOGRAPHIC TECHNOLOGIES FOR 1-GB DRAMS AND BEYOND (INVITED)
S. OKAZAKI, HITACHI 31
14:30 (2) EFFECTS OF CLEAVAGE ON LOCAL CROSS-SECTIONAL STRESS
DISTRIBUTION IN TRENCH ISOLATION STRUC TURE
A. YAGISHITA, T. SAITO, S. MATSUDA AND Y. USHIKU, TOSHIBA 34
14:50 (3) RIE-LAG REDUCTION BY NH3 ADDITION IN ALUMINUM ALLOY ETCHING
UNDER BC13/C12 CHEMIS
TRY
M. YAMANAKA, H. NAKAGAWA AND M. KUBOTA, MATSUSHITA 37
15:10 (4) DOUBLE SPACER LOCOS PROCESS WITH SHALLOW RECESS OF SILICON FOR
0.20 /AM ISOLATION B.-J. CHO, S.-A. JANG, T.-S. SONG, S.-H. PYI AND
J.-C. KIM, HYUNDAI ELEC, KOREA 40 15:30 (5) CMP WITH PAD-PRESS RING FOR
SUPERIOR UNIFORMITY PERFORMANCE M. NISHIO, T. MURAKAMI AND M. HAMANAKA*,
MATSUSHITA, AND *MATSUSHITA ELEC 43 15:50 (6) POLYSILICON ENCAPSULATED
LOCOS FOR DEEP SUBMICRON CMOS LATERAL ISOLATION
G. BADENES, R. ROOYACKERS, I.D. WOLF AND L. DEFERM, IMEC, BELGIUM 46
B-2: NOVEL GROWTH APPROACHES (16:30-18:20)
16:30 (1) SELECTIVE NUCLEATION BASED EPITAXY(SENTAXY): A NOVEL APPROACH
FOR THIN FILM FORMA TION (INVITED) H. KUMOMI, AND T. YONEHARA, CANON 49
17:00 (2) DEPOSITION AND CHARACTERIZATION OF SILICON-GERMANIUM ALLOY
THIN FILMS ON OXIDE (INVITED) R. REIF, M.I.T., U.S.A 52
17:30 (3) LOW TEMPERATURE EPITAXY OF SI AND SIGE BY THE NOVEL
CENTRIFUGAL LPE TECHNIQUE (INVITED) M. KONUMA, MAX-PLANCK-INST., GERMANY
55
18:00 (4) A PROPOSED ATOMIC-LAYER-DEPOSITION OF GERMANIUM ON SI(100) T.
KITAMURA, S. SUGAHARA, T. NAGAI*, Y. UCHIDA* AND M. MATSUMURA, TOKYO
INST. TECHNOL., AND *TEIKYO UNIV. SCI. & TECH 58
ROOM C
SYMPOSIUM V: GAN- AND ZNSE-BASED LIGHT EMITTERS AND THEIR DEGRADATION
MECHANISM (14:00-17:45)
14:00 (1) EXTENDED DEFECTS IN II-VI BLUE GREEN LASER DIODES (INVITED)
R.L. GUNSHOR, J. HAN AND A.V. NURMIKKO*, PURDUE UNIV., AND *BROWN UNIV.
U.S.A 61
14:25 (2) CHARACTERIZATION OF ZNMGSSE-BASED WIDE-GAP LASER DIODES
(INVITED) K. NAKANO AND A. ISHIBASHI, SONY 62
14:50 (3) FUNDAMENTALS OF THE NITRIDE BASED LASER DIODE (INVITED) I.
AKASAKI, S. SOTA, H. SAKAI AND H. AMANO, MEIJO UNIV 65
15:15 (4) BLUISH-PURPLE INGAN MULTI-QUANTUM WELL STRUCTURE LASER DIODES
(INVITED) S. NAKAMURA, NICHIA CHEMICAL IND 67
16:00 (5) DEFECT ISSUES IN III-V ALLOY SEMICONDUCTORS AND THEIR
INFLUENCE ON THE DEGRADATION OF OPTI CAL DEVICES (INVITED) O. UEDA,
FUJITSU LABS 70
16:25 (6) OPTICAL DEGRADATION OF INGAN/ALGAN LED ON SAPPHIRE SUBSTRATE
GROWN BY MOCVD T. EGAWA, H. ISHIKAWA, T. JIMBO AND M. UMENO, NAGOYA
INST. TECHNOL 73
16:45 (7) CHARACTERIZATION AND CONTROL OF MBE-ZNSE/GAAS(100) SUBSTRATE
INTERFACE AND REGROWN ZNSE/ZNSE HOMOINTERFACE Y. YAMAGATA, K. FUJIWARA,
T. SAWADA, K. IMAI, K. SUZUKI, N. KIMURA AND I. TSUBONO, HOKKAIDO INST.
TECHNOL 76
17:05 (8) MOVPE GROWTH OF HIGH QUALITY GAN/INGAN SINGLE QUANTUM WELL
STRUCTURE USING MISORIENTED SIC SUBSTRATE
A. ISHIBASHI, H. TAKEISHI, N. UEMURA, M. KUME AND Y. BAN, MATSUSHITA 79
XVLLL
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17:25 (9) EXCITONIC PROPERTIES IN ZNSE/MGS SUPERLATTICES H. NASHIKI, H.
KUMANO, H. SUZUKI, T. OBINATA, K. UESUGI, J. NAKAHARA AND I. SUEMUNE,
HOKKAIDO UNIV 82
ROOM D
D-L: HIGH-SPEED DEVICES (14:00-15:30)
14:00 (1) HIGH SPEED INP-BASED ICS FOR A FIBER-TO-MICROWAVE LINK
(INVITED) Y.-K. CHEN, J. LIN, D. HUMPHREY, R.K. MONTGOMERY, R.HAMM, J.
WEINER, R. KOPF, F. REN, J. LOTHIAN, R. RYAN, D. SIVCO AND A.Y. CHO,
AT&T, U.S.A 85
14:30 (2) HIGHLY SELECTIVE WET-ETCHING USING ADIPIC ACID FOR UNIFORM
DAMAGE-FREE PROCESS OF INALAS/INGAAS HEMTS K. HIGUCHI, H. UCHIYAMA, T.
SHIOTA, M. KUDO AND T. MISHIMA, HITACHI 88
14:50 (3) NEW TECHNOLOGIES OF A WSI BASE ELECTRODE AND A HEAVILY-DOPED
THIN BASE LAYER FOR HIGHPERFORMANCE INGAP/GAAS HBTS T. OKA, K. OUCHI, K.
MOCHIZUKI AND T. NAKAMURA, HITACHI 91
15:10 (4) INGAP/GAAS SUB-SQUARE-MICRON EMITTER HBT WITH FMAX 100 GHZ K.
HIRATA, T. TANOUE*, H. MASUDA*, H. UCHIYAMA* AND A. TERANO*, HITACHI
ULSI ENG., AND *HITACHI 94
D-2: CHARACTERIZATIONS FOR TRANSPORT DEVICES (15:50-17:20)
15:50 (1) PHOTONIC SAMPLING OF ULTRAFAST ELECTRONIC DEVICES: BRIDGING
THE MEASUREMENT GAP (INVITED)
J. ALLAM, HITACHI EUROPE, U.K 97
16:20 (2) KELVIN PROBEFORCE MICROSCOPY FOR POTENTIAL DISTRIBUTION
MEASUREMENT OF CLEAVED SURFACE OF GAAS DEVICES
M. ARAKAWA, S. KISHIMOTO AND T. MIZUTANI, NAGOYA UNIV 100
16:40 (3) THE CHANGE OF MO/GAAS SCHOTTKY CHARACTERISTICS BY THE FORWARD
GATE CURRENT T. OHSHIMA, R. SHIGEMASA AND T. KIMURA, OKI 103
17:00 (4) ENHANCEMENT OF SCHOTTKY BARRIER HEIGHTS ON INDIUM
PHOSPHIDE-BASED MATERIALS BY IN-SITU ELECTROCHEMICAL PROCESS AND ITS
MECHANISM
T. SATO, S. UNO, T. HASHIZUME AND H. HASEGAWA, HOKKAIDO UNIV 106
AUGUST 27, TUESDAY
ROOM A
A-3: INTERCONNECTS (9:10-10:40)
9:10 (1) METAL CVD TECHNOLOGY FOR ULSI APPLICATIONS: THE ALUMINUM ROUTE
(INVITED) A. KNORR, J. FALTERMEIER, R. TALEVI, H. GUNDLACH, K.A. KUMAR,
G.G. PETERSON AND A.E. KALOYEROS, UNIV. ALBANY, U.S.A 109
9:40 (2) SELF-ALIGNED PASSIVATION TECHNOLOGY FOR COPPER INTERCONNECTION
USING COPPER-ALUMINUM ALLOY N. AWAYA, AND T. KOBAYASHI, NTT 112
10:00 (3) GAP-FILLING OF CU EMPLOYING SELF-SUSTAINED SPUTTERING WITH ICP
IONIZATION T. ICHIKI, T. KIKUCHI, A. SANO*, S. SHINGUBARA* AND Y.
HORIIKE, TOYO UNIV., AND HIROSHIMA UNIV 115
10:20 (4) A STUDY OF VIA-ELECTROMIGRATION FAILURE IN MULTILEVEL
INTERCONNECTION WITH HIGH TEMPERA TURE SPUTTERED ALUMINUM
M. KAGEYAMA, K. HASHIMOTO AND H. ONODA, OKI 118
XIX
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A-4: DOPING (11:00-12:30)
11:00 (1) ULTRA-SHALLOW DOPING FOR SI SUB-0.1 /.TM DEVICES (INVITED) S.
MATSUMOTO, KEIO UNIV 121
11:30 (2) THE ROLE OF HYDROGEN DURING RAPID VAPOR-PHASE DOPING ANALYZED
BY FTIR-ATR Y. KIYOTA, S. SUZUKI* AND T. INADA*, HITACHI, AND *HOSEI
UNIV 124
11:50 (3) CHANNEL DOPING ENGINEERING WITH INDIUM AS AN ALTERNATIVE
P-TYPE DOPANT Y.-T. LEE, K.-W. SONG, B.-G. PARK AND J.D. LEE, SEOUL
NAT L UNIV., KOREA ,127 12:10 (4) INFLUENCE OF ION ENERGY ON CARRIER
ACTIVATION AND SOURCE/DRAIN PARASITIC RESISTANCE IN LOW-ENERGY ION
IMPLANTATION FOR 0A5-FIM MOSFETS
A. NISHIDA, E. MURAKAMI AND S. KIMURA, HITACHI 130
A-5: SUICIDE/DLD (14:00-15:40)
14:00 (1) A NOVEL TECHNIQUE FOR ULTRATHIN COSI2 LAYERS: OXIDE MEDIATED
EPITAXY R.T. TUNG, TOKYO INST. TECHNOL 133
14:20 (2) ANOMALOUS JUNCTION LEAKAGE BEHAVIOR OF TI-SALICIDE CONTACTS ON
ULTRA-SHALLOW JUNC TIONS
A. SAKATA, M. KOYAMA, H. AKUTSU, I. KUNISHIMA, M. KOIKE AND M. TOMITA,
TOSHIBA... 136
14:40 (3) ADVANCED TI SALICIDE TECHNOLOGY FOR HIGH PERFORMANCE
QUARTER-MICRON LOGIC LSIS J. SUENAGA, H. SUMI, K. TAJIMA, A. HORIUCHI,
M. KANNO AND Y. OKAMOTO, SONY 139
15:00 (4) RECONDITIONING-FREE POLISH FOR INTER-LAYER-DIELECTRIC
PLANARIZATION K. NAKAMURA, S. KISHII AND Y. ARIMOTO, FUJITSU LABS 142
15:20 (5) RELIABILITY OF LOW-PARASITIC-CAPACITANCE MULTILEVEL
INTERCONNECTION USING SURFACE-DENSIFIED LOW- ORGANIC SPIN-ON GLASS T.
FURUSAWA, AND Y. HOMMA, HITACHI 145
A-6: SI SURFACE (16:00-18:20)
16:00 (1) IMPROVEMENT OF CURRENT INJECTION OF POROUS SILICON L.-H. LAIH,
Y.-A. CHEN, N.-Y. LIANG, W.-C. TSAY, M.-N. CHANG AND J.-W. HONG, NAT L
CENTRAL UNIV., TAIWAN 148
16:20 (2) A NEW METHOD FOR MEASUREMENT OF MICRO DEFECTS NEAR THE SURFACE
OF SI WAFERS -OPTICAL SHALLOW DEFECT ANALYZER (OSDA)- K. TAKEDA, H.
ISHIDA AND A. HIRAIWA, HITACHI 151
16:40 (3) A NEW TECHNIQUE FOR QUANTITATIVE ANALYSIS OF METALLIC
CONTAMINATION INSIDE DEEP-SUBMICRON-DIAMETER HOLES H. AOKI, S. YAMASAKI
AND N. AOTO, NEC 154
17:00 (4) SPATIALLY CONTROLLED FORMATION OF ATOMICALLY FLAT SI(001)
SURFACE BY ANNEALING WITH A DIRECT CURRENT IN UHV
A. ANDO, K. SAKAMOTO, K. MIKI, K. MATSUMOTO AND T. SAKAMOTO, ETL 157
17:20 (5) ATOMIC STEP MORPHOLOGY OF EPITAXIALLY GROWN AND H2 ANNEALED SI
SURFACE Y. KUNII, AND M. NAGASE, NTT 160
17:40 (6) THE INCREASE OF THE NATIVE OXIDE THICKNESS OF H-TERMINATED SI
SURFACES BY GASEOUS CON TAMINATION IN A CLEAN ROOM ATMOSPHERE T. ITOGA,
H. KOJIMA, J. YUGAMI AND M. OHKURA, HITACHI 163
18:00 (7) NATIVE OXIDE GROWING BEHAVIOR ON SI CRYSTAL STRUCTURE AND
RESISTIVITY K. SEKINE, G.-M. CHOI, M. MORITA AND T. OHMI, TOHOKU UNIV
166
ROOM B
SYMPOSIUM IV: FABRICATION AND CHARACTERIZATION OF QUANTUM NANOSTRUCTURES
(9:10-16:10)
9:10 (1) QUANTUM-EFFECT ELECTRON DEVICES USING METAL/INSULATOR
NANOSTRUCTURES (INVITED) M. ASADA, M. WATANABE, W. SAITOH, K. MORI AND
Y. KOHNO, TOKYO INST. TECHNOL 169 9:40 (2) NANOMETER-SCALE LOCAL
OXIDATION OF SI USING SIN ISLANDS FORMED IN THE EARLY STAGES OF
NITRIDATION
T. YAMAMOTO, AND M. TABE, SHIZUOKA UNIV 172
XX
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10:00 (3)
10:20 (4)
11:00 (5)
11:30 (6)
11:50 (7)
12:10 (8)
14:00 (9)
14:30 (10)
14:50 (11)
15:10 (12)
15:30 (13)
15:50 (14)
RESONANT TUNNELING THROUGH SI02/SI QUANTUM DOT/SI02 DOUBLE BARRIER
STRUCTURES M. FUKUDA, K. NAKAGAWA, S. MIYAZAKI AND M. HIROSE, HIROSHIMA
UNIV 175 ELECTRON TUNNELING FROM A QUANTUM WIRE FORMED AT THE EDGE OF A
SIMOX-SI LAYER Y. ONO, Y. TAKAHASHI, S. HORIGUCHI, K. MURASE AND M.
TABE*. NTT, AND *SHIZUOKA
UNIV 178
LUMINESCENCE FROM INP/GALNP QUANTUM DOTS EXCITED BY
MICRO-PHOTOLUMINESCENCE OR BY LOCAL INJECTION WITH SCANNING-TUNNELING
MICROSCOPE (INVITED) L. SAMUELSON, P. CASTRILLO, D. HESSMAN, J. LINDAHL,
L. MONTELIUS AND M.-E. PISTOL, LUND UNIV., SWEDEN 181
SCANNING CAPACITANCE MICROSCOPY AS A CHARACTERIZATION TOOL FOR
SEMICONDUCTOR DEVICES T. YAMAMOTO, Y. SUZUKI, M. MIYASHITA, H. SUGIMURA
AND N. NAKAGIRI, NIKON 184 EXPERIMENTAL EVIDENCE OFHOT ELECTRON
DETECTION WITH SCANNING HOT ELECTRON MICROSCOPY
(SHEM) F. VAZQUEZ, D. KOBAYASHI, I. KOBAYASHI, K. FURUYA, Y. MIYAMOTO,
T. MARUYAMA, M. WATANABE AND M. ASADA, TOKYO INST. TECHNOL 187
DEVELOPMENT OF AN IN-SITU METHOD OF FABRICATING ARTIFICIAL ATOM
STRUCTURES ON THE SI(100) SURFACE
T. HASHIZUME, S. HEIKE, M.I. LUTWYCHE, S. WATANABE AND Y. WADA, HITACHI
190 SELF-ORDERED QUANTUM NANOSTRUCTURES GROWN ON NONPLANAR SUBSTRATES
(INVITED) E. KAPON, SWISS FEDERAL INST. TECHNOL., SWITZERLAND 193
SPIN-SPLITTING REVERSAL IN INGAAS/INP QUANTUM-WIRES IN HIGH MAGNETIC
FIELD
J. HAMMERSBERG, M. NOTOMI, H. WEMAN, M. POTEMSKI*, T. TAMAMURA**,
M. OKAMOTO** AND H. SUGIURA**, LINKOPING UNIV., *GRENOBLE HIGH MAGNETIC
FIELD LAB., FRANCE AND **NTT, JAPAN, SWEDEN 196
LASING OSCILLATION OF VERTICAL MICROCAVITY QUANTUM DOT LASERS M.
NISHIOKA, F. SOGAWA, M. KITAMURA, R. SCHUR AND Y. ARAKAWA, UNIV. TOKYO
199 SUCCESSFUL PASSIVATION OF AIR-EXPOSED ALGAAS SURFACES BY A SILICON
INTERFACE CONTROL
LAYER-BASED TECHNIQUE K. IKEYA, S. KODAMA, T. HASHIZUME AND H. HASEGAWA,
HOKKAIDO UNIV 202 PHOTOTRANSISTORS USING POINT CONTACT STRUCTURES Y.
NAGAMUNE, T. NODA*, Y. OHNO*, Y. ARAKAWA*, H. SAKAKI* AND M. WATANABE,
ETL,
AND *UNIV. TOKYO 205
PHONON ASSISTED TUNNELING AND P/V-RATIO IN A MAGNETIC CONFINED QUASI OD
INGAAS/ INALAS RESONANT TUNNELING DIODE C. WIRNER, Y. AWANO, T.
FUTATSUGI*, N. YOKOYAMA, T. NAKAGAWA**, H. BANDO** AND S. MUTO***,
FUJITSU, *FUJITSU LABS., **ETL AND ***HOKKAIDO UNIV 208
ROOM C
C-L: OPTICAL PROPERTIES OF NON-SI MATERIALS (9:10-10:40)
9:10 (1) NONLINEAR OPTICAL RESPONSE OF EXCITONS IN SEMICONDUCTOR
MICROCAVITIES (INVITED) E. HANAMURA, UNIV. TOKYO 211
9:40 (2) STARK LADDER PHOTOLUMINESCENCE OF X STATES IN GAAS/ALAS TYPE-I
SUPERLATTICES N. OHTANI, M. HOSODA, H. MIMURA, K. TOMINAGA AND T.
WATANABE, ATR 214 10:00 (3) NEW REALIZATION METHOD FOR THREE-DIMENSIONAL
PHOTONIC CRYSTAL IN OPTICAL WAVELENGTH
REGION -EXPERIMENTAL CONSIDERATIONN. YAMAMOTO, S. NODA AND A. SASAKI,
KYOTO UNIV
217
10:20 (4) NOVEL RADIATION PATTERN OF SPONTANEOUS EMISSION FROM PHOTONIC
BANDGAP CRYSTAL CAVITY LASER
H. HIRAYAMA, T. HAMANO AND Y. AOYAGI, RIKEN
220
C-2: NITRIDE AND NOVEL COMPOUNDS (11:00-12:30)
11:00 (1) SPIN-CHARGE COUPLED FUCTIONALITIES OF OXIDE MATERIALS
(INVITED)
Y. TOKURA, UNIV. TOKYO
223
11:30 (2) INITIAL STAGE OF GAN MBE GROWTH STUDIED BY ION SCATTERING AND
RECOILING SPECTROMETRY
M. KUBO, AND K. NOZAWA, MATSUSHITA
224
XXI
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50 (3) EXCITON SPECTRA OF CUBIC AND HEXAGONAL GAN EPITAXIAL FILMS S.
CHICHIBU, H. OKUMURA*. G. FEUILLET*, S. NAKAMURA** AND S. YOSHIDA*,
SCIENCE UNIV.
TOKYO, *ETL AND **NICHIA CHEMICAL IND 227
10 (4) DEMONSTRATION OF AN ELECTRONIC GRADE TI/AIN/SI
METAL-INSULATOR-SEMICONDUCTOR CAPACI TOR
X. ZHANG, D. WALKER, A. SAXLER, P. KUNG, J. XU AND M. RAZEGHI,
NORTHWESTERN UNIV., U.S.A 230
POSTER PREVIEW (14:00-15:40)
PC-1 SI PROCESS
(1) EVALUATION OF KILLER PARTICLE SIZE IN DEEP SUBMICRON DEVICES
Y. SASAKI AND H. KITAJIMA, NEC 233
(2) SUPPRESSION OF CURRENT-INDUCED DEGRADATION IN LASER-CRYSTALLIZED
POLYCRYSTALLINE SILICON
FILMS BY ADDING OXYGEN H.-S. CHOI, J.-H. JUN AND M.-K. HAN, SEOUL NAT L
UNIV., KOREA 236
(3) LOCAL-SYMMETRY INDUCED LIGHT EMISSION FROM SI/SI)_A.GEA./SI QUANTUM
WELLS
Y. KIMURA, K. NAKAGAWA, K. TAKAGI AND M. MIYAO, HITACHI 239
(4) CONTAMINATION-FREE PHYSICAL RESIST STRIPPING BY
MEGASONIC/IPA/FLUORIDE ENHANCED LIFT
OFF PROCESSING T. JIZAIMARU, S. OJIMA*, S. OMAE AND T. OHMI, TOHOKU
UNIV. AND *NOMURA MICRO SCIENCE 242
(5) RAPID THERMAL ANNEALING USING THE COMBUSTION OF H2 WITH N20 A.
TAJIMA, N. TAKASHIMA, Y. SUNAGA AND T. SAMESHIMA, TOKYO A&T UNIV 245
PC-2 TFT
(1) DEFECTS IN SI THIN-FILM TRANSISTORS STUDIED BY SPIN-DEPENDENT
TRANSPORT G. KAWACHI, C.F.O. GRAEFF*. M.S. BRANDT* AND M. STUTZMANN*,
HITACHI, AND *TECHNISCHE UNIV. MUNCHEN, GERMANY 248
(2) CHARACTERIZATION OF UNDOPED A-SI:H BY CHARGE DEEP-LEVEL TRANSIENT
SPECTROSCOPY R. DURNY, V. NADAZDY* AND I. THURZO*, SLOVAK TECHNICAL
UNIV., AND *SLOVAK ACADEMY SCIENCES, SLOVAKIA 251
(3) OXIDATION OF AMORPHOUS SILICON FOR SUPERIOR THIN FILM TRANSISTORS
(OASIS TFT) M. MIYASAKA, T. KOMATSU AND H. OHSHIMA, SEIKO EPSON 254
(4) AN INVESTIGATION ON STRESS EFFECT IN POLY-SI THIN FILM TRANSISTORS
FABRICATED BY METAL *INDUCED LATERAL CRYSTALLIZATION T.-H. IHN, B.-I.
LEE, S.-W. LEE*, Y.-C. JEON** AND S.-K. JOO, SEOUL NAT L UNIV., SAM
SUNG AND **LG SEMICON, KOREA 257
PC-3 ISOLATION AND POWER DEVICES
(1) HIGH RELIABILITY TRENCH ISOLATION TECHNOLOGY WITH ELEVATED FIELD
OXIDE STRUCTURE FOR SUBQUARTER MICRON CMOS DEVICES T. UKEDA, T. YAMADA,
M. YAMANAKA, C. KUDO*, M. SEGAWA, M. ARAI, M. NISHIO, T. YABU, T.
UEHARA, T. NAKABAYASHI, A. KANDA AND M. OGURA, MATSUSHITA, AND MATSU
SHITA ELEC 260
(2) A NOVEL DUAL GATE CMOS TECHNOLOGY USING LOW ENERGY PHOSPHOROUS/BORON
IMPLANTA TION AND ARSENIC PRE-AMORPHIZATION H. NAKAOKA, A. HORI, H.
UMIMOTO AND A. KANDA, MATSUSHITA 263
(3) HIGH DENSITY FLASH MEMORY USING A NOVEL BIPOLAR ACTION-CONTROLLED
ELECTRICAL FUSE J.-H. YI, J. KIM, J.-H. CHOI, C.-H. CHUNG, S.T. AHN AND
O.H. KWON, SAMSUNG, KOREA... 266 (4) A NOVEL NOR VIRTUAL-GROUND ARRAY
ARCHITECTURE FOR HIGH DENSITY FLASH Y. YAMAUCHI AND K. SAKIYAMA, SHARP
269
(5) 0.8/UN CMOS PROCESS COMPATIBLE 60V - LOOMQ-MM2 POWER MOSFET ON
BONDED SOI Y. KAWAGUCHI, Y. YAMAGUCHI, H. FUNAKI, Y. TERAZAKI AND A.
NAKAGAWA, TOSHIBA 272
XXII
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(6) APPLICATION OF A JUNCTION FET STRUCTURE TO A LOW LOSS DIODE
K. YANO, M. KASUGA, A. SHIMIZU, M. MITSUI* AND J. MORITA*, YAMANASHI
UNIV., AND HITACHI 275
(7) IMPROVING TRANSIENT RESPONSE OF SI METAL-SEMICONDUCTOR-METAL
PHOTODETECTOR WITH AN ADDITIONAL I-A-SIGE FILM L.-H. LAIH, J.-C. WANG,
Y.-A. CHEN, W.-C. TSAY,T.-S. JEN, J.-S. CHEN* AND J.-W. HONG, NAT L
CENTRAL UNIV., AND *ITRI, TAIWAN 278
PC-4 SOI AND RELIABILITY
(1) A CONCISE NARROW-CHANNEL EFFECT MODEL FOR SUB-QUARTER-MICRONSOI PMOS
DEVICES SUITA BLE FOR CAD OF SOI CMOS ULSI CIRCUITS J.B. KUO AND K.W.
SU, NAT L TAIWAN UNIV., TAIWAN 281
(2) HOT-CARRIER EFFECT OF AN ULTRA-THIN-FILM SOI POWER MOSFET
S. MATSUMOTO, H. YAGINUMA* AND T. YACHI, NTT, AND *TOYOHASHI UNIV.
TECHNOL 284 (3) A NEW DUAL-GATE SOI LIGBT WITH THE SHORTED ANODE
B.-H. LEE, W.-O. LEE, M.-S. LIM,J.-E. PARK, M.-K. HAN AND Y.-I. CHOI*,
SEOUL NAT L UNIV., AND *AJOU UNIV., KOREA 287
(4) A NEW GATE-OVERLAPPED LDD POLY-SI THIN FILM TRANSISTORS
K.-Y. CHOI, J.-W. LEE, M.-K. HAN AND B.-S. BAE*. SEOUL NAT L UNIV., AND
*SAMSUNG, KOREA 290
(5) A UNIVERSAL RELATIONSHIP BETWEENBORON PENETRATION AND GATE OXIDE
RELIABILITY FOR SURFACE
CHANNEL PMOSFET M. ARAI, T. NAKABAYASHI, T. YABU, I. MATSUO*, A. KANDA
AND M. OGURA, MATSUSHITA, AND *MATSUSHITA ELEC 293
(6) EFFECT OF NITRIDE SIDEWALL SPACER ON HOT CARRIER RELIABILITY
CHARACTERISTICS OF MOSFET S H. HWANG, D.-H. LEE AND J.M. HWANG, LG
SEMICON, KOREA 296
PC-5 SYMPOSIUM I: SOI TECHNOLOGY
(1) SB MULTIPLE ION IMPLANTED CHANNEL FOR LOW VTH, DEEP SUBMICRON
SOI-PMOSFETS
A. SATOH, K. SUZUKI AND T. SUGII, FUJITSU LABS 299
(2) REDUCTION OF CHARGE BUILD-UP DURING REACTIVE ION ETCHING BY USING
SOI STRUCTURES K. ARITA, M. AKAMATSU AND T. ASANO, KYUSHU INST. TECHNOL
302
(3) THINNING OF SOI BONDED WAFERS BY APPLYING VOLTAGE DURING KOH ETCHING
A. OGURA, NEC 305
(4) TWO-DIMENSIONAL ANALYTICAL SUBTHRESHOLD MODEL AND OPTIMAL SCALING OF
FULLY-DEPLETED
SOI MOSFET DOWN TO 0.1 (IM CHANNEL LENGTH S. PIDIN AND M. KOYANAGI,
TOHOKU UNIV 308
(5) A 100 15NM THICK 8-INCH BONDED SOI FABRICATED WITH A SELECTIVE
POLISHING METHOD
M. HASHIMOTO, Y. OHKUBO, M. SHIMANOE, M. NAKAMURA, H. SATO, H. KOMATSU
AND Y. MIYAZAWA, SONY 311
(6) ENHANCEMENT AND SUPPRESSION OF BAND-TO-BAND TUNNELING CURRENT IN
ULTRA-THIN
NMOSFETS/SIMOX: INFLUENCE OF SUPERFICIAL SI LAYER THICKNESS AND IT S
FUTURE PROSPECT T. ISHIYAMA AND Y. OMURA, NTT 314
(7) IMPACT OF CURRENT GAIN INCREMENT EFFECT ON ALPHA PARTICLE INDUCED
SOFT ERRORS IN SOI
DRAMS S. SATOH, Y. TOSAKA, K. SUZUKI AND T. ITAKURA, FUJITSU LABS 317
(8) RELATION BETWEEN KINK EFFECT AND IMPACT IONIZATION EFFECT IN SOI
MOSFETS WITHBODY TER
MINAL
T. MATSUMOTO, Y. KUDOH, N. TERAO, J. KIM AND M. KOYANAGI, TOHOKU UNIV
320 (9) ANALYSIS ON THE THRESHOLD VOLTAGE FIXING AND THE
FLOATING-BODY-EFFECT SUPPRESSION FOR
0.1 ^M FULLY DEPLETED SOI-MOSFET R. KOH AND H. MATSUMOTO, NEC 323
XXNI
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ROOM D
D-3: OTHERS (TFT) (9:10-11:00)
9:10 (1) A NEW TFT-LCD WITH IN-PLANE SWITCHING MODE OF NEMATIC LIQUID
CRYSTALS (INVITED) K. KONDO AND H. KAWAKAMI, HITACHI 326
9:40 (2) THREE-LEVEL CHARGE-PUMPING TECHNIQUE FOR GRAIN-BOUNDARY TRAP
EVALUATION IN POLYSILICON THIN FILM TRANSISTORS K.-J. KIM, AND O. KIM,
POSTECH, KOREA 329
10:00 (3) INSITU FABRICATION OF HIGH QUALITY OXIDE AND POLY-SI FILM BY
EXCIMER LASER IRRADIATION C.-M. PARK, J.-S. YOO, B.-H. MIN, D.-K. MOON*
AND M.-K. HAN, SEOUL NAT L UNIV., AND *LG R&D CTR., KOREA 332
10:20 (4) LOWTEMPERATURE^ 550C) CMOS THIN-FILM TRANSISTORS IN RTCVD
POLY-SIO.88GEO.12 FILMS S.-K. LEE, S.-M. CHOE, C.-G. AHN, W.-J. CHUNG*,
Y.-K. KWON, B.K. KANG AND O. KIM, POSTECH, AND *RIST, KOREA 335
10:40 (5) A STUDY ON FABRICATION OF MULTIGATE/MULTICHANNEL POLYSILICON
TFT J.-H. PARK, AND C.-J. KIM, SEOUL CITY UNIV., KOREA 338
POSTER PREVIEW (11:20-12:50)
PD-1 OXIDE RELIABILITY AND THIN OXIDE
(1) ATOMIC SCALE OXIDATION PROCESS ON HYDROGEN-TERMINATED SILICON
SURFACE
H. NOHIRA, Y. OKUBE, E. IIJIMA, H. YAMAMOTO, N. TATE*, M. KATAYAMA* AND
T. HATTORI, MUSASHI INST. TECHNOL., AND *SHIN-ETSU HANDOTAI 341
(2) CONTROLLED NITROGEN INCORPORATION AT SI-SI02 INTERFACES BY REMOTE
PLASMA-ASSISTED
PROCESSING K. KOH, H. NIIMI AND G. LUCOVSKY, NORTH CAROLINA STATE UNIV.,
U.S.A 344
(3) MECHANISM AND OPTIMIZATION OF NITROGEN CO-IMPLANT FOR SUPPRESSING
BORON PENETRATION
IN P+-POLY-SI GATE OF PMOSFET S T.S. CHAO, C.H. CHIEN*, C.P. HAO*, M.C.
LIAW, C.H. CHU, C.Y. CHANG AND T.F. LEI, NAT L NANO DEVICE LABS., AND
*NAT L CHIAO TUNG UNIV., TAIWAN 347
(4) THEORETICAL ANALYSIS OF HYDROGEN-RELATED DEFECTS IN SI02 THIN FILM
BY MOLECULAR ORBITAL
METHOD T. KANASHIMA, M. OKUYAMA AND Y. HAMAKAWA, OSAKA UNIV 350
(5) MECHANISM FOR DESORPTION OF SIF4 FROM SI02 FILM SURFACE IN HF
SOLUTIONS
T. OKU, K. SATO AND M. OTSUBO, MITSUBISHI 353
(6) LOCAL ATOMIC BONDING IN FLUORINATED SILICON OXIDES: STATIC
DIELECTRIC CONSTANT AND CHEMI
CAL STABILITY G. LUCOVSKY AND H.-Y. YANG, NORTH CAROLINA STATE UNIV.,
U.S.A 356
(7) DISTRIBUTION OF TRAPPED ELECTRON AND HOLE IN THIN SI02 FILM
K.N. LIM, S. HONG AND K. LEE, KAIST, KOREA 359
(8) EFFECT OF METALS (FE.CU) ON 8-NM-THICK GATE OXIDE RELIABILITY Y.
SHIRAMIZU, M. TANAKA, S. YAMASAKI, M. NAKAMORI, N. AOTO AND H. KITAJIMA,
NEC... 362 (9) TWO CORRELATED MECHANISMS IN THIN SI02 BREAKDOWN
H. SATAKE, N. YASUDA, S. TAKAGI AND A. TORIUMI, TOSHIBA 365
(10) A PERCOLATION APPROACH TO DIELECTRIC BREAKDOWN STATISTICS
T. TANAMOTO AND A. TORIUMI, TOSHIBA 368
PD-2 SI SURFACE
(1) METALLIC IMPURITY GROWING BEHAVIOR ON SURFACE CRYSTAL STRUCTURE
G.-M. CHOI, K. SEKINE*, H. MORITA* AND T. OHMI*, HYUNDAI ELEC, AND
*TOHOKU UNIV., JAPAN, KOREA 371
(2) SELECTIVE SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI BY OXYGEN
PLASMA TREATMENT Y. OKADA, K. AOTO AND T. ASANO, KYUSHU INST. TECHNOL
374
(3) BORON-INDUCED 73 X YF RECONSTRUCTION ON SI(LLL) SURFACE M. UMEKAWA,
S. OHARA, S. TATSUKAWA, H. KURIYAMA AND S, MATSUMOTO, KEIO UNIV. ... 377
XXIV
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(4) TRANSIENTOXIDE LAYER AT A THERMALLY GROWN SI02/SI INTERFACE,
INTERPRETED BASED ON LOCAL VIBRATION AND X-RAY REFLECTIVITY Y. SUGITA,
N. AWAJI AND S. WATANABE, FUJITSU LABS 380
(5) IN-SITU OBSERVATION OF SILICIDE FORMATION ON HYDROGEN-TERMINATED SI
SURFACE BY UHV STM AND LEED S. SHINGUBARA, S. TAKATA, S. SHINABE, E.
TAKAHASHI, T, TANAKA, H. SAKAUE AND T. TAKAHAGI, HIROSHIMA UNIV 383
(6) OBSERVATION OF SOLUTION/SI INTERFACE USING IR SPECTROCHEMICAL CELL
DURING WET CHEMICAL OXIDATION
Y. SUGITA AND S. WATANABE, FUJITSU LABS 386
(7) HIGH TEMPERATURE STM OBSERVATION OF LAYER-BY-LAYER ETCHING OF SI(L
11) WITH 02 FLUX
T. KOMEDA AND Y. NISHIOKA, TEXAS INSTRU 389
(8) SCANNING TUNNELING MICROSCOPY OBSERVATION ON THE ATOMIC STRUCTURES
OF STEP EDGES AND ETCH PITS ON NH4F-TREATED SI(LLL) SURFACE H. SAKAUE,
E. TAKAHASHI, T. TANAKA, A. KOJIMA, M. OSADA, S. SHINGUBARA AND T.
TAKAHAGI, HIROSHIMA UNIV 392
PD-3 METALLIZATION
(1) EFFECT OF CAP-METALS ON CO SALICIDE PROCESS
H. MINAKATA, K. GOTO AND T. SUGII, FUJITSU LABS 395
(2) CORRELATION OFW-SI-N FILM MICROSTRUCTURE WITH BARRIER PERFORMANCE
AGAINST CU DIFFUSION.
Y. SHIMOOKA, T. IIJIMA, S. NAKAMURA AND K. SUGURO, TOSHIBA 398
(3) A COMPARATIVE STUDY OF CVD AND PVD TUNGSTEN NITRIDE DIFFUSION
BARRIERS FOR CU METALLI
ZATION
S.C. SUN, M.H. TSAI, H.T. CHIU, S.H. CHUANG, M.C. CHEN, W.K. YEH AND
T.D. WU, NAT L CHIAO TUNG UNIV., TAIWAN 401
(4) ATOMISTIC OBSERVATION OF TITANIUM ADSORPTION AND INITIAL GROWTH OF
TITANIUM SILICIDE ON
SI(LLL)
H. KURIYAMA, S. TATSUKAWA, M. UMEKAWA, S. OHARA AND S. MATSUMOTO, KEIO
UNIV. .. .404 (5) HIGHLY OXIDATION-RESISTANT TIN BARRIER LAYERS FOR
FERROELECTRIC CAPACITORS
Y. MATSUI, K. KUSHIDA, H. MIKI, K. TORII AND Y. FUJISAKI, HITACHI 407
PD-4 SIGE AND SI PROCESSES
(1) SUPPRESSING ION IMPLANTATION INDUCED OXIDE CHARGING BY UTILIZING
PHYSICALLY DAMAGED
OXIDE REGION M. TAKASE, K. ERIGUCHI AND B. MIZUNO, MATSUSHITA 410
(2) FORMATION OF ULTRA-SHALLOW AND LOW-LEAKAGE P+N JUNCTIONS BY
LOW-TEMPERATURE POST-IM
PLANTATION ANNEALING
A. NAKADA, K. KANEMOTO, M.M. OKA, Y. TAMAI AND T. OHMI, TOHOKU UNIV 413
(3) A NOVEL LOCOS-TRENCH COMBINATION ISOLATION METHOD FOR MAXIMUM
CHEMICAL MECHANI
CAL POLISHING(CMP) PROCESS WINDOW T.-S. PARK, M.H. PARK, H.S. LEE, S.E.
KIM, Y.G. SHIN, H.K. KANG ANDM.Y. LEE, SAM SUNG, KOREA 416
(4) ELECTRICAL CHARACTERISTICS OF ULTRA-FINETRENCH ISOLATION FABRICATED
BY A NEW TWO-STEP FILL
ING PROCESS K. SHIOZAWA, T. OISHI, H. MAEDA, T. MURAKAMI, K. YASUMURA,
Y. ABE AND Y. TOKUDA, MITSUBISHI 419
(5) A NOVEL SHALLOW TRENCH ISOLATION TECHNIQUE
J.-Y. CHENG, T.F. LEI AND T.S. CHAO*, NAT L CHIAO TUNG UNIV., AND *NAT L
NANO DEVICE
LAB., TAIWAN 422
(6) STRAIN EFFECTS OF GE ISLANDS ON SI^GE/SI QUANTUM WELL
E.S. KIM, N. USAMI AND Y. SHIRAKI, UNIV. TOKYO
425
(7) EFFECTS OF THERMAL STABILITY OF SI^^GE^C,, LAYERS ON PROPERTIES OF
THEIR CONTACTS WITH
ALUMINUM J. MI, A. GUPTA, C.Y. YANG, J. ZHU*, P.K.L. YU*, P. WARREN**
AND M. DUTOIT**, SANTA
CLARA UNIV., *UNIV. CALIFORNIA AND **SWISS FEDERAL INST. TECH.,
SWITZERLAND, U.S.A 428
XXV
IMAGE 11
SYMPOSIUM III: SINGLE ELECTRON DEVICES (14:00-16:45) 1
14:00 (1) METROLOGICAL APPLICATIONS OF SINGLE ELECTRON TUNNELING
(INVITED) J.M. MARTINIS, M.W. KELLER, N.M. ZIMMERMAN AND A.H. STEINBACH,
NIST, U.S.A 431 14:30 (2) SIDE GATE SINGLE ELECTRON TRANSISTOR WITH
MULTI-ISLANDS STRUCTURE OPERATED AT ROOM TEM
PERATURE MADE BY STM/AFM NANO-OXIDATION PROCESS K. MATSUMOTO, M. ISHII,
J. SHIRAKASHI, B.J. VARTANIAN* AND J.S. HARRIS*, ETL, AND STANFORD
UNIV., U.S.A 433
14:45 (3) HIGH-TEMPERATURE OPERATION OF A1/A1203/A1 SINGLE-ELECTRON
TRANSISTORS Y. NAKAMURA, CD. CHEN AND J.S. TSAI, NEC 437
15:00 (4) FABRICATION AND CHARACTERIZATION OF NB/NB OXIDES-BASED SINGLE
ELECTRON TRANSISTORS (SETS) J. SHIRAKASHI, M. ISHII, K. MATSUMOTO, N.
MIURA* AND M. KONAGAI*, ETL, AND *TOKYO
INST. TECHNOL 440
15:30 (5) REALIZATION OF GAAS-BASED SINGLE ELECTRON DEVICES HAVING
SINGLE AND MULTIPLE DOTS BY SCHOTTKY IN-PLANE-GATE CONTROL OF TWO
DIMENSIONAL ELECTRON GAS S. KASAI, K. JINUSHI, H. OKADA, H. TOMOZAWA, T.
HASHIZUME AND H. HASEGAWA, HOK
KAIDO UNIV 443
15:45 (6) GAAS/ALGAAS/INGAAS VERTICAL TRIPLE BARRIER SINGLE ELECTRON
TRANSISTORS D.G. AUSTING, T. HONDA AND S. TARUCHA, NTT 446
16:00 (7) OBSERVATION OF COULOMB BLOCKADE OSCILLATIONS UP TO 50K FROM
INP-BASED INGAAS QUAN TUM WIRES GROWN BY MOLECULAR BEAM EPITAXY H.
OKADA, H. FUJIKURA, T. HASHIZUME AND H. HASEGAWA, HOKKAIDO UNIV. 449
16:15 (8) THE RESONANT TUNNELING MODE OF A SINGLE ELECTRON TRANSISTOR
K. NATORI, AND N. SANO, UNIV. TSUKUBA 452
16:30 (9) COULOMB BLOCKADE EFFECTS IN EDGE QUANTUM WIRE SOI MOSFETS A.
OHATA, AND A. TORIUMI, TOSHIBA 455
AUGUST 28, WEDNESDAY
ROOM A
SYMPOSIUM I: SOI TECHNOLOGY (9:10-16:40)
9:10 (1) SMART-CUT: A NEW S.O.I. MATERIAL TECHNOLOGY BASED ON HYDROGEN
IMPLANTATION AND WAFER BONDING (INVITED) M. BRUEL, B. ASPAR AND A.-J.
AUBERTON-HERVE*, LETI, AND SOITEC, FRANCE 458 9:40 (2) WAFER DIRECT
BONDING AT ROOM TEMPERATURE BY MEANS OF THE SURFACE ACTIVATED BONDING
T. SUGA, T.R. CHUNG, L. YANG, N. HOSODA AND H. TAKAGI*, UNIV. TOKYO, AND
MECHANI CAL ENG. LAB., AIST 461
10:00 (3) EVOLUTION OF EXTENDED DEFECTS IN HIGH TEMPERATURE (T 1150C)
OXIDIZED SIMOX L.F. GILES, AND Y. KUNII, NTT 464
10:20 (4) VACUUM BONDING FOR THE FABRICATION OF PBSOI G. CHA, B.H. LEE,
K.W. LEE, G.J. BAE, J. MOON AND S.I. LEE, SAMSUNG, KOREA 467 11:00 (5)
THIN FILM SILICON ON INSULATOR SUBSTRATE CONSIDERATIONS FOR CMOS
TECHNOLOGIES (INVITED) S.R. WILSON, T. WETTEROTH, S. HONG, H. SHIN, M.
RACANELLI AND M. HUANG, MOTOROLA,
U.S.A 470
11:30 (6) ADVANCED SOI DEVICES USING CMP AND WAFER BONDING (INVITED) H.
HORIE, S. NAKAMURA, Y. NARA, K. SUZUKI, T. TANAKA, M. IMAI, A. ITOH, AND
Y. ARIMOTO, FUJITSU LABS 473
12:00 (7) ANALYSIS OF THE CHARGE DENSITY AT FIELD OXIDE/SOI AND
SOI/BURIED OXIDE INTERFACES IN PARTIALLY DEPLETED SOI MOSFET S WITH AND
WITHOUT HYDROGENATION
T. IWAMATSU, T. IPPOSHI, S. MIYAMOTO, Y. YAMAGUCHI, Y. INOUE, H. MIYOSHI
AND A. YASUOKA, MITSUBISHI 476
14:00 (8) PROCESS TECHNOLOGY FOR RELIABLE SOI DRAM (INVITED) K.-C. PARK,
J.-W. PARK AND T.-E. SHIM, SAMSUNG, KOREA 479
XXVI
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14:30 (9) LSI APPLICATIONS OF 0.25-^M CMOS/SIMOX TECHNOLOGY (INVITED) M.
INO, T. TSUCHIYA, K. TAKEYA AND T. SAKAI*. NTT AND *NTT ELEC. TECHNOL
482 15:00 (10) 1-V MULTIGIGAHERTZ MOSFET AMPLIFIER WITH AN ON-CHIP
INDUCTOR FABRICATED ON A SIMOX WAFER
M. HARADA, C. YAMAGUCHI AND T. TSUCHIYA, NTT 485
15:40 (11) A METHOD OF HOT CARRIER LIFETIME PREDICTION IN
PARTIALLY-DEPLETED FLOATING SOI NMOSFETS S. MAEDA, Y. YAMAGUCHI, I.-J.
KIM, H.O. JOACHIM, Y. INOUE, H. MIYOSHI AND A. YASUOKA, MITSUBISHI 488
16:00 (12) VELOCITY OVERSHOOT AND GM LIMITATION IN SUB-O.L/MI
FULLY-DEPLETED SOI-MOSFETS R. OHBA, AND T. MIZUNO, TOSHIBA 491
16:20 (13) NEW ELECTRICALLY-THINNED INTRINSIC-CHANNEL SOI MOSFET WITH
0.01/MI CHANNEL LENGTH T. SHIMATANI, S. PIDIN AND M. KOYANAGI, TOHOKU
UNIV 494
ROOM B
B-3: THIN OXIDE I (9:10-10:50)
9:10 (1) ELECTRONIC INTERFACE PROPERTIES OF LOW TEMPERATURE ULTRATHIN
OXIDES ON SI(LLL) SURFACES STUDIED BY CONTACTLESS CAPACITANCE-VOLTAGE
AND PHOTOLUMINESCENCE METHODS T. YOSHIDA, S. KOYANAGI, T. HASHIZUME AND
H. HASEGAWA, HOKKAIDO UNIV 497
9:30 (2) EVIDENCE FOR ASYMMETRICAL HYDROGEN PROFILE IN THIN D20 OXIDIZED
SI02 BY SIMS AND MODIFIED TDS
K. MURAOKA, S. TAKAGI AND A. TORIUMI, TOSHIBA 500
9:50 (3) EFFECTS OF ELECTRODE MATERIALS AND ANNEALING AMBIENTS ON THE
LEAKAGE CURRENT OF TI02 FILMS
S.C. SUN, T.F. CHEN, T.H. LIANG AND F.M. PAN, NAT L CHIAO TUNG UNIV.,
TAIWAN 503 10:10 (4) HIGH QUALITY CVD/THERMAL STACKED GATE OXIDE FILMS
WITH HYDROGEN-FREE CVD SI02 FORMED IN THE SICL4-N20 SYSTEM T. OGATA, K.
KOBAYASHI, H. WATANABE, H. KUROKAWA, Y. MATSUI AND M. HIRAYAMA,
MITSUBISHI 506
10:30 (5) IMPACT OF NITROGEN DISTRIBUTION IN OXYNITRIDE TUNNEL FILM/SI
ON BAND-TO-BANDTUNNELING CURRENT AND ELECTRON INJECTION IN FLASH MEMORY
T. ARAKAWA, R. MATSUMOTO AND T. HAYASHI, OKI 509
B-4: THIN OXIDE II (11:10-12:30)
11:10 (1) HOLE TRAPPING DUE TO IMPURITIES IN AMORPHOUS SILICON DIOXIDE
C. KANETA, FUJITSU LABS 512
11:30 (2) EARLY STAGES OF OXIDATION OF CLEAN SI(L 1 L)-7X7 AND
SI(100)-2XL SURFACES STUDIEDBY IN-SITU HIGH RESOLUTION X-RAY
PHOTOELECTRON SPECTROSCOPY J.L. ALAY, AND M. HIROSE, HIROSHIMA UNIV 515
11:50 (3) DIFFUSION OF CARBON IN SI02 FILMS AND ITS SEGREGATION AT
SI/SI02 INTERFACE I. MIZUSHIMA, H. KAMIYA, N. ARAI*, M. SONODA, M.
YOSHIKI, S. TAKAGI, M. WAKAMIYA,
S. KAMBAYASHI, Y. MIKATA, S. MORIAND M. KASHIWAGI, TOSHIBA, AND
*TOSHIBAMICROELEC
TRONICS 518
12:10 (4) SIGNIFICANT EFFECT OF OH INSIDE SILICON CHEMICAL OXIDES ON
AHF(ANHYDROUS HYDROFLUORIC ACID) ETCHING
K. MURAOKA, I. KUNISHIMA, N. HAYASAKA AND S. TAKAGI, TOSHIBA 521
B-5: OXIDE RELIABILITY (14:00-16:40)
14:00 (1) DEVICE CHARACTERISTICS AND RELIABILITY OF THIN GATE
DIELECTRICS GROWN BY LIGHT WET OXYN-
ITRIDATION(LWO) M.-S. JOO, S.-K. LEE, Y.-J. PARK AND J.-C. KIM, HYUNDAI
ELEC, KOREA 524
14:20 (2) SINGLE CRYSTALLINE SILICON FLOATING GATE TECHNOLOGY FOR SUB-10
NM INTERELECTRODE DIELECTRICS
S. SAIDA, Y. MITANI, H. HAZAMA, S. KAMMBAYASHI, I. MIZUSHIMA, J.
SHIOZAWA AND Y.
OZAWA, TOSHIBA
527
XX VII
IMAGE 13
14:40 (3) FIELD ACCELERATION MODEL FOR TIME-DEPENDENT DIELECTRIC
BREAKDOWN M. KIMURA, H. KOYAMA AND A. YASUOKA, MITSUBISHI 530
15:00 (4) RELIABILITY OF ULTRA-THIN GATE OXIDES BELOW 3 NM IN THE DIRECT
TUNNELING REGIME M. DEPAS, R. DEGRAEVE, T. NIGAM, G. GROESENEKEN AND M.
HEYNS, IMEC, BELGIUM 533 15:40 (5) SUPPRESSION OF HOT CARRIER
DEGRADATION IN LDD N-MOSFETS WITH GATE N20-NITRIDED 03-OXIDE
Y. TAMURA, S. OHKUBO, T. NAKANISHI, Y. KATAOKA*, K. IRINO+ AND K.
TAKASAKI, FUJITSU LABS., AND FUJITSU 536
16:00 (6) ANALYTICAL MODELLING OF QUASI-BREAKDOWN OF ULTRATHIN GATE
OXIDES UNDER CONSTANT CUR RENT STRESSING
T. YOSHIDA, S. MIYAZAKI AND M. HIROSE, HIROSHIMA UNIV 539
16:20 (7) EVALUATION OF HOT-HOLE INDUCED INTERFACE TRAPS AT THE
TUNNELING SI02(3.5 NM)-SI INTERFACE BY THE CONDUCTANCE TECHNIQUE S.
OGAWA, T. KOBAYASHI, S. NAKAYAMA AND Y. SAKAKIBARA, NTT 542
ROOM C
C-3: PHYSICS OF QUANTUM DEVICES I (9:10-10:50)
9:10 (1) DEPENDENCE OF RESONANT INTERBAND TUNNELING CURRENT ON BARRIER
AND WELL WIDTH IN INAS/ ALSB/GASB/ALSB/INAS DOUBLE-BARRIER STRUCTURES H.
KITABAYASHI, T. WAHO AND M. YAMAMOTO, NTT 545
9:30 (2) SIDEGATING-INDUCED NEGATIVE DIFFERENTIAL RESISTANCE IN
MBE-GROWN INAS/ALSB HFETS C.R. BOLOGNESI, M.W. DVORAK AND D.H. CHOW*,
SIMON FRASER UNIV., AND *HUGHES RES. LABS., CANADA 548
9:50 (3) INCREASED ELECTRON CONCENTRATION IN INAS/ALGASB
HETEROSTRUCTURES USING A SI PLANAR DOPED ULTRATHIN INAS QUANTUM WELL S.
SASA, Y. YAMAMOTO, S. IZUMIYA, M. YANO, Y. IWAI AND M. INOUE, OSAKA
INST. TECH
NOL 550
10:10 (4) DETERMINATION OF LATERAL CONFINEMENT ENERGIES IN ALGAAS/GAAS
SPLIT-GATE QUANTUM WIRE STRUCTURES BY FAR INFRARED SPECTROSCOPY K.
YAMANAKA, S.N. WANG AND K. HIRAKAWA, UNIV. TOKYO 553
10:30 (5) MEASUREMENT OF SEMICONDUCTOR HETEROJUNCTION BAND DISCONTINUITY
BY FREE ELECTRON LASER K. NISHI, H. OHYAMA, T. SUZUKI, T. MITSUYU AND T.
TOMIMASU, FREE ELECTRON LASER RES. INST 556
C-4: CHARACTERIZATION OF III-V COMPOUNDS (11:00-12:40)
11:00 (1) ORIGIN OF NITROGEN-PAIR LUMINESCENCE IN GAAS STUDIED BY
NITROGEN ATOMIC-LAYER-DOPING IN MOVPE
T. MAKIMOTO, H. SAITO AND N. KOBAYASHI, NTT 559
11:20 (2) STEP-FREE SURFACE GROWN ON GAAS (111)B SUBSTRATE BY LOCALIZED
AREAMETALORGANIC VAPOR PHASE EPITAXY T. NISHIDA, AND N. KOBAYASHI, NTT
562
11:40 (3) METASTABLE PROPERTIES OF THE DOMINANT ELECTRON TRAP IN
LOW-TEMPERATURE GAAS GROWN BY MOLECULAR BEAM EPITAXY T. HASHIZUME, S.
SHIOBARA AND H. HASEGAWA, HOKKAIDO UNIV 565
12:00 (4) QUANTIFICATION OF ELECTRICAL DEACTIVATION BY TRIPLY NEGATIVE
CHARGED GA VACANCIES IN HIGH LY DOPED THIN GAAS LAYERS
S. MATSUSHITA, D. INOUE, K. MATSUMURA, M. SAWADA, K. YODOSHI AND Y.
HARADA, SANYO... 568
12:20 (5) MISSING-DIMER STRUCTURES AND THEIR KINK DEFECTS ON MBE-GROWN
(2X4) RECONSTRUCTED (OOL)INP SURFACES STUDIED BY UHV SCANNING TUNNELING
MICROSCOPE Y. ISHIKAWA, T. FUKUI AND H. HASEGAWA, HOKKAIDO UNIV 571
XXVTU
IMAGE 14
POSTER PREVIEW (14:00-15:10)
PC-6 NEW STRUCTURE DEVICES
(1) A HIGH-POWER-DENSITY AND HIGH-EFFICIENCY ATOMIC-PLANAR-DOPED
ALGAAS/INGAAS QUAN TUM-WELL HEMT FOR 2.4V MEDIUM-POWER WIRELESS
COMMUNICATION APPLICATIONS Y.-L. LAI, E.Y. CHANG, C.-Y. CHANG*, T.H.
LIU** AND S.P. WANG**, NAT L CHIAO TUNG UNIV., *NAT L NANO DEVICE LABS,
AND **HEXAWAVE, TAIWAN 574
(2) FULLY STRAINED HEAVILY CARBON-DOPED GAAS USING CARBONTETRABROMIDE BY
GAS-SOURCE MOLECULAR BEAM EPITAXY AND ITS APPLICATION IN INGAP/GAAS
HETEROJUNCTION BIPOLAR TRAN SISTORS
K. OUCHI, T. MISHIMA, K. MOCHIZUKI, T. OKA AND T. TANOUE, HITACHI 577
(3) NOISE PARAMETER EXTRACTION OF GAAS MESFET WITH MONTE-CARLO
SIMULATION J.M. BAEK, Y.S. KWON AND S. HONG, KAIST, KOREA 580
(4) DEPOSITION OF POLYIMIDE FILMS BY IONIZED CLUSTER BEAM
K.W. KIM, N.Y. KIM*, C.E. HONG*, S.Y. KIM** AND C.N. WHANG**, SUNMOON
UNIV., SOONGSIL UNIV. AND **YONSEI UNIV., KOREA 583
(5) ORGANIC-ON-INP HETEROSTRUCTURE DIODES FOR MICROWAVE APPLICATIONS P.
URBACH, D. AMMERMANN AND W. KOWALSKY, TU BRAUNSCHWEIG, GERMANY 586 (6)
ELECTRICAL PROPERTIES OF AL/AL203/(BA,RB)BI03/SRTI03(NB) THREE TERMINAL
DEVICE F. TODA, T. YAMADA, K. HASHIMOTO AND H. ABE, OKI 589
PC-7 OPTICAL DEVICE PROPERTIES
(1) ANALYSIS OF SPOT SHAPE BEHAVIOR ON A SPOT-SIZE CONTROLLABLE LASER
DIODE S. NAKATSUKA, A. ARIMOTO AND S. SAITOH*, HITACHI, AND
*HITACHI-KOKI 592
(2) GALNAS/ALGALNAS SEMICONDUCTOR LASERS ON INP SUBSTRATE WITH ALAS
OXIDE CURRENT
CONFINEMENT N. OHNOKI, T. MUKAIHARA, N. HATORI, A. MIZUTANI, F. KOYAMA
AND K. IGA, TOKYO INST. TECHNOL 595
(3) THE APPLICATION OF SEMICONDUCTING LOW-TEMPERATURE GROWN GAAS TO
IMPROVE LASER DIODES GROWN ON SI SUBSTRATES C.C. PHUA, T.C. CHONG, W.S.
LAU AND L.S. TAN, NAT L UNIV. SINGAPORE, SINGAPORE .... 598
(4) 650NM-BAND HIGH POWER ALGALNP VISIBLE LASER DIODES FABRICATED BY
REACTIVE ION BEAM
ETCHING USING CL2/N2 MIXTURE I. KIDOGUCHI, H. ADACHI, K. TANAKA, T.
FUKUHISA, M. MANNOH AND A. TAKAMORI, MATSU
SHITA 601
(5) 1200 DPI LIGHT EMITTING DIODE ARRAY FOR OPTICAL PRINTER PRINT HEADS
M. OGIHARA, T. SHIMIZU, M. TANINAKA, H. HAMANO, Y. NAKAMURA AND I.
ABIKO, OKI... 604 (6) AFM DIRECT MEASUREMENT OF SIDEWALL ROUGHNESS IN
GAAS/ALGAAS WAVEGUIDES
K. HOSOMI, M. SHIRAI, K. HIRUMA, J. SHIGETA AND T. KATSUYAMA, HITACHI
607 (7) ULTRAFAST PHOTOCONDUCTIVE SWITCHES WITH A 43 NM GAP FABRICATED
BY AN ATOMIC FORCE MICRO
SCOPE T. ITATANI, Y. KOTAKI*, T. NAKAGAWA, K. MATSUMOTO, Y. SUGIYAMA AND
H. UCHIKI*, ETL, AND *NAGAOKA UNIV. TECHNOL 610
(8) LOCALIZATION OF PHOTONS IN TWO-DIMENSIONAL TRIANGULAR LATTICES WITH
PERIODIC DEFECTS
X.-P. FENG AND Y. ARAKAWA, UNIV. TOKYO 613
PC-8 SYMPOSIUM U: CONTROL OF T MATERIALS
(1) PLATINUM-ENHANCED OXIDATION OF SILICON: FORMATION OF MOS STRUCTURE
BELOW 300C
H. KOBAYASHI, T. YUASA*, H. KAWA*, Y. NAKATO* AND K. YONEDA**, PRESTO,
RES. DE VELOPMENT CORP. JAPAN, *OSAKA UNIV., AND **MATSUSHITA ELEC 616
(2) INTERFACE STATES FOR ULTRATHIN CHEMICAL OXIDE LAYERS ON SI(LLL) AND
SI(100)
Y. YAMASHITA, Y. NAKATO, Y. NISHIOKA*, H. KATO** AND H. KOBAYASHI***,
OSAKA UNIV., TEXAS INSTRUMENTS, **PHOTON FACTORY AND ***PRESTO 619
(3) PROPERTIES OF A NEW PASSIVATION SIN,. FILMS PREPARED BY CAT-CVD
METHOD
S. OKADA AND H. MATSUMURA, JAIST 622
XXIX
IMAGE 15
(4) EFFECT OF ECRCVD SI02 FILM DEPOSITION ON FERROELECTRIC PROPERTIES OF
PT/PZT/PT CAPACI
TOR
S. OH, I.S. PARK, B.H. KIM, S.M. LEE, J. MOON, S.I. LEE AND M.Y. LEE,
SAMSUNG, KOREA 625
(5) ORIENTATION CONTROL OF SR0.7BI2.3TA2O9 THIN FILMS BY CHEMICAL
PROCESS
I. KOIWA, T. KANEHARA, J. MITA, T. IWABUCHI, T. OSAKA* AND S. ONO*. OKI,
AND *WASEDA
UNIV 628
(6) STRUCTURAL AND ELECTRICAL PROPERTIES FOR FLUORINE-DOPED SILICON
OXIDE FILMS PREPARED BY BIASED HELICON-PLASMA CVD
T. TAMURA, Y. INOUE, M. SATOH, H. YOSHITAKA AND J. SAKAI, ANELVA 631
(7) APPLICATION OF SIOF FILM DEPOSITED USING TEOS/TEFS/02 SYSTEM TO
MULTI-LEVEL INTERCON
NECTION DESIGNED WITH 0.25/WN RULE H. KUDO, Y. SATHO, H. MIYAZAWA, H.
HARADA AND A. SHIMIZU, FUJITSU 634
LPC LATE NEWS
(1) HIGHENERGY B IMPLANTATION FOR FE GETTERING; EVALUATION OF 7.5 NM
THICK GATEOXIDE RELIA
BILITY
K. HAMADA, D.J. EAGLESHAM*, T. HAYASHI, J.M. POATE* AND S. SAITO, NEC
AND LUCENT TECHNOL., U.S.A 854
(2) CHEMICAL-VAPOR-DEPOSITION OF HYDROGEN-FREE SILICON-DIOXIDE FILMS
Y. UCHIDA, S. TAKEI AND M. MATSUMURA^, TEIKYO UNIV. SCI. & TECH. AND
*TOKYO INST.
TECHNOL 856
D-4: OPTICAL INTERCONNECTION TECHNOLOGIES (9:10-10:40)
SILICON MICROMACHINED MICROPHOTONICS (INVITED) K.Y. LAU, O. SOLGAARD, N.
TIEN, M. DANEMAN, M. KIANG AND R.S. MULLER, UNIV. CALIFOR NIA, U.S.A
637
HIGH RESPONSIVITY IN OPTICALLY CONTROLLED FIELD-EFFECT TRANSISTOR USING
DIRECT WAFER BOND ING TECHNIQUE T. SAKAI, AND K. SHIMOMURA, SOPHIA UNIV
640
HIGH-RATE GAAS EPITAXIAL LIFT-OFF TECHNIQUE FOR OPTOELECTRONIC
INTEGRATED CIRCUITS J. MAEDA, Y. SASAKI, K. SHIBAHARA, S. YOKOYAMA, S.
MIYAZAKI AND M. HIROSE, HIROSHI MA UNIV 643
POLYIMIDE OPTICAL WAVEGUIDE WITH MULTI-FAN-OUT FOR MULTI-CHIP MODULE
APPLICATION Y. NOGUCHI, T. MATSUMOTO, Y. KODOH AND M. KOYANAGI, TOHOKU
UNIV 646
D-5: LIGHT EMITTERS (11:00-12:40)
11:00 (1) STRAINED DOUBLE-QUANTUM-WELL LASERS EMITTING IN 1.2 /IM REGION
GROWN ON IN0.2IGAO.79AS TERNARY SUBSTRATES K. OTSUBO, H. SHOJI, T.
KUSUNOKI, T. SUZUKI, T. UCHIDA AND H. ISHIKAWA, FUJITSU LABS.... 649
11:20 (2) EXTREMELY LOW ASTIGMATISM AND ASPECT RATIO IN 650NM-BAND
SELF-PULSING ALGALNP LASERS
WITH STRAINED-QUANTUM-WELL SATURABLE-ABSORBING LAYER H. ADACHI, I.
KIDOGUCHI, T. FUKUHISA, K. TANAKA, M. MANNOH AND A. TAKAMORI, MAT
SUSHITA 652
11:40 (3) IMPROVEMENT ON COUPLING EFFICIENCY FOR PASSIVE ALIGNMENT OF
STACKED MULTI-FIBER TAPES TO A VERTICAL-CAVITY SURFACE-EMITTING LASER
ARRAY Y. KOBAYASHI, K. MATSUDA, T. CHINO, T. YOSHIDA AND K. HATADA,
MATSUSHITA 655
12:00 (4) MULTILAYER ORGANIC LIGHT EMITTING DIODES FOR EFFICIENT CARRIER
INJECTION AND CONFINEMENT D. AMMERMANN, A. BOHLER, S. DIRR AND W.
KOWALSKY, TU BRAUNSCHWEIG, GERMANY 658 12:20 (5) EMISSION PROPERTIES OF
YBCO-FILM PHOTO-SWITCHES AS THZ RADIATION SOURCES M. TANI, M. TONOUCHI,
K. SAKAI, Z. WANG, N. ONODERA, M. HANGYO*, Y. MURAKAMI*
AND S. NAKASHIMA*, COMM. RES. LAB., AND *OSAKA UNIV 661
ROOM D
D-4:
9:10 (1)
9:40 (2)
10:00 (3)
10:20 (4)
XXX
IMAGE 16
POSTER PREVIEW (14:00-15:20)
PD-5 ELECTRONIC AND OPTICAL PROPERTIES
(1) TRANSPORT TRANSITION FROM CHAOTIC TO REGULAR TRAJECTORY IN
CORRUGATION GATED QUANTUM
WIRES
Y. OCHIAI, A.W. WIDJAJA, N. SASAKI, K. YAMAMOTO, K. ISHIBASHI*, J.P.
BIRD*, Y. AOYAGI*, T. SUGANO* AND D.K. FERRY**, CHIBA UNIV., *RIKEN AND
**ARIZONA STATE UNIV., U.S.A 664
(2) TIME CONSTANT FOR HIGH-FIELD DOMAIN FORMATION IN MULTIPLE QUANTUM
WELL SEQUENTIAL
RESONANT TUNNELING DIODES Y. SHIMADA AND K. HIRAKAWA, UNIV. TOKYO 667
(3) EXTREMELY FLAT INTERFACES IN IN.VGAJ_.VAS/ALO.3GAO.7AS QUANTUM WELLS
GROWN ON (411)A
GAAS SUBSTRATES BY MBE T. SAEKI, T. MOTOKAWA, T. KITADA, S. SHIMOMURA,
A. ADACHI*, Y. OKAMOTO**, N. SANO*** AND S. HIYAMIZU, OSAKA UNIV.,
*NISSIN ELEC, **KUBOTA AND ***KWANSEIGAKUIN UNIV 670
(4) CHARACTERISTICS OF ALGAAS/ALGAAS INTERFACE AFTER IN-SITU
LOW-TEMPERATURE H2 ANNEALING
AND MOVPE REGROWTH S. GOTOH AND H. HORIKAWA, OKI 673
(5) MONOLAYER STEPS FORMATION IN INP AND GALNAS BY OMVPE AND REDUCTION
OF RESONANT
ENERGY WIDTH IN GALNAS/INP RTDS M. SUHARA, C. NAGAO, H. HONJI, Y.
MIYAMOTO, K. FURUYAAND R. TAKEMURA, TOKYO INST. TECHNOL 676
(6) FORMATION OF NATURAL INALAS VERTICAL SUPERLATTICES
B. LEE, J.H. LEE, J.-H. BAEK, W.S. HAN, E.-H. LEE, S.W. JUN* AND T.-Y.
SEONG+, ELEC. TELECOMM. RES. INST, AND +KWANGJU INST. SCI. & TECH.,
KOREA 679
(7) MECHANISMS AND GROWTH CHARACTERISTICS OF SI SUB-ATOMIC-LAYER EPITAXY
FROM SI2H6
Y. SUDA, TOKYO UNIV. AGRI. TECH 682
PD-6 SYMPOSIUM IV: FABRICATION AND CHARACTERIZATION OF QUANTUM
NANOSTRUCTURES
(1) ELECTRON STATES IN CRESCENT GAAS COUPLED QUANTUM-WIRES
K. KOMORI, H. IMANISHI*, X.-L. WANG, M. OGURA AND H. MATSUHATA, ETL AND
*NIPPON
SHEET GLASS 685
(2) FORMATION OF INGAAS/INAJAS QUANTUM WIRES AND DOTS WITH EXTREMELY
SMOOTH FACETS ON
MESA-PATTERNED (OOL)INP SUBSTRATES BY SELECTIVE MOLECULAR BEAM EPITAXY
M. ARAKI, Y. HANADA, H. FUJIKURA AND H. HASEGAWA, HOKKAIDO UNIV 688
(3) TUNNELING SPECTROSCOPY OFINAS WETTING LAYERS AND COHERENT ISLANDS:
RESONANT TUNNELING
THROUGH TWO- AND ZERO-DIMENSIONAL ELECTRONIC STATES T. SUZUKI, K.
NOMOTO, K. TAIRA AND I. HASE, SONY 691
(4)
SINGLE-DOT OPTICAL SPECTROSCOPY OF SELF-ORGANIZED STRAINED INGAAS
QUANTUM DISKS ON
(311)B-GAAS SUBSTRATE H. KAMADA, J. TEMMYO, M. NOTOMI, T. FURUTA AND T.
TAMAMURA, NTT 694 (5) SPONTANEOUS FORMATION OF NANOSTRUCTURES IN
IN^GA^^AS EPILAYERS GROWN BY MOLECULAR
BEAM EPITAXY ON GAAS NON-(100)-ORIENTED SUBSTRATES P.O. VACCARO, K.
FUJITA AND T. WATANABE, ATR 697
(6) INVESTIGATION OF THE INFLUENCE OF INO.59GAO.4IAS RELAXED LAYER
INAS/IN0.59GAO.4IAS/GAAS
DOUBLE QUANTUM WELL RESONANT INTERBAND TUNNELING STRUCTURE C.C. YANG,
K.C. HUANG* AND Y.K. SU**, NAT L SUN YAT-SEN UNIV., *NAT L KAOHSIUNG
INST. TECHNOL. AND **NAT L CHENG KUNG UNIV., TAIWAN 700
(7) EXCITATION POWER DEPENDENT PHOTOLUMINESCENCE CHARACTERIZATION AND
SUCCESSFUL EDGE PAS
SIVATION OF ETCHED INGAAS QUANTUM WIRES FORMED BY ELECTRON BEAM
LITHOGRAPHY
M. KUBO, H. FUJIKURA AND H. HASEGAWA, HOKKAIDO UNIV 703
XXXI
IMAGE 17
(8) A NOVEL ELECTRON WAVE INTERFERENCE DEVICE USING MULTIATOMIC STEPS ON
VICINAL GAAS SUR
FACES GROWN BY MOVPE: INVESTIGATION OF TRANSPORT PROPERTIES
M. AKABORI, J. MOTOHISA, T. IRISAWA, S. HARA, J. ISHIZAKI, K. OHKURI AND
T. FUKUI, HOK KAIDO UNIV 706
(9) PHOTOLUMINESCENCE FROM DEUTERIUM TERMINATED POROUS SILICON
T. MATSUMOTO, Y. MASUMOTO, S. NAKASHIMA*, H. MIMURA** AND N. KOSHIDA***,
RES. DEVELOP. CORP. JAPAN, *OSAKA UNIV., *+TOHOKU UNIV. AND TOKYO UNIV.
AGRI. TECH.... 709
(10) OBSERVATION OF NEGATIVE DIFFERENTIAL RESISTANCE PHENOMENA IN POROUS
SILICON SUPERLATTICE
STRUCTURES
J.-C. LIN, S.-J. WANG AND H.-Y. TSAI, NAT L CHENG KUNG UNIV., TAIWAN 712
(11) GROWTH CONTROL OF NANO-NEEDLE ON SILICON SURFACE USING SCANNING
TUNNELING MICROSCOPE
S. HEIKE, T. HASHIZUME AND Y. WADA, HITACHI 715
PD-7 CHARACTERIZATION
(1) IN-SITU STM OBSERVATION OF GAAS SURFACES AFTER NITRIDATION
T. MAKIMOTO, M. KASU, J.L. BENCHIMOL AND N. KOBAYASHI, NTT 718
(2) PREPARATION AND CHARACTERIZATION OF IRIDIUM OXIDE THIN FILMS BY DC
REACTIVE SPUTTERING
H-J. CHO, H. HORII, C.S. KANG, S.O. PARK, J.W. KIM, B.T. LEE, C.S.
HWANG, S.I. LEE AND M.Y. LEE, SAMSUNG, KOREA 721
(3) BUILT-IN ELECTRIC FIELD STRENGTH IN INP/N+-INP DETERMINED BY
PHOTOELLIPSOMETRY AND PHOTOREFLECTANCE
Y.-M. XIONG, T. SAITOH, H. YAGUCHI# AND Y. SHIRAKI^, TOKYO UNIV. AGRI.
TECH., AND UNIV. TOKYO 724
(4) INVESTIGATION OF THEINDIUM ATOM INTERDIFFUSION ON THE GROWTH OF THE
INGAN/GAN HETEROSTRUCTURE
J.S. TSANG, J.D. GUO, S.H. CHAN, M.S. FENG AND C.Y. CHANG, NAT L NANO
DEVICE LAB., TAIWAN 727
(5) ON P-TYPE DOPING LIMITS IN ZNMGSSE QUATERNARY SEMICONDUCTORS
K. HIRANO, G. SATO AND I. SUEMUNE, HOKKAIDO UNIV 730
(6) VISIBLE AND ULTRAVIOLET PHOTOLUMINESCENCE FROM CU-_I-V[2
CHALCOPYRITE SEMICONDUCTORS
GROWN BY METALORGANIC VAPOR PHASE EPITAXY S. CHICHIBU, S. SHIRAKATA^, S.
ISOMURA^ AND H. NAKANISHI, SCIENCE UNIV. TOKYO, AND EHIME UNIV 733
(7) ELECTROLUMINESCENCE OF ZNA.SR,^A.S:CE THIN FILM PHOSPHORS S.T. LEE,
M. KITAGAWA, K. ICHINO AND H. KOBAYASHI, TOTTORI UNIV 736
LPD LATE NEWS
(1) SINGLE-BEAM AND SINGLE-MODE EMISSION FROM SURFACE-EMITTING LASER
DIODES BASED ON SUR FACE MODE EMISSION A. KOCK, N. FINGER, C. GMACHL,
A. GOLSHANI, R. HAINBERGER, E. GORNIK AND L..KORTE+, TECHNISCHE UNIV.
WIEN AND *SIEMENS, GERMANY, AUSTRIA 858
(2) CBE GROWN (GAIN)(ASP) LASER DIODES FOR MONOLITHIC INTEGRATION H.
KRATZER, A. NUTSCH, B. TORABI, G. TRANKLE* AND G. WEIMANN*, TECH. UNIV.
MIINCHEN AND *FRAUNHOFER-INST. ANGEWANDTE FESTKORPERPHYSIK, GERMANY 860
AUGUST 29, THURSDAY
ROOM A
LA: LATE NEWS (9:10-10:20)
9:10 (1) OCTAHEDRAL VOID STRUCTURE OBSERVED AT THE GROWN-IN DEFECTS IN
THE BULK OF STANDARD CZ-SI FOR MOSLSIS
T. UEKI, M. ITSUMI AND T. TAKEDA, NTT 862
XXXLL
IMAGE 18
9:20 (2) NEW CLEANING SOLUTION; MIXTURE OF HF/HC1 AND PURE WATER
CONTAINING A LITTLE DISSOLVED OXYGEN Y. HAYAMI, H. OGAWA, M.T. SUZUKI,
Y. OKUI AND S. FUJIMURA, FUJITSU 864
9:30 (3) EFFECTIVE KOH ETCHING PRIOR TO MODIFIED SECCO ETCHING FOR
ANALYZING DEFECTS IN THIN BONDED SOI WAFERS K. MITANI, H. AGA AND M.
NAKANO, SHIN-ETSU HANDOTAI 866
9:40 (4) BLUE-GREEN STIMULATED EMISSION IN LATTICE-MATCHED ZNHGSSE/ZNSSE
DOUBLE HETEROSTRUCTURES BY OPTICAL PUMPING Y. EGUCHI, K. HARA, K.
YAMAMOTO, S. HANEDA, H. KUKIMOTO* AND H. MUNEKATA, TOKYO INST. TECHNOL.
AND *TOPPAN PRINTING 868
9:50 (5) PROPOSAL OF A NEW SELF-LIMITED GROWTH AND ITS APPLICATION TO
THE FABRICATION OF ATOMICALLY UNIFORM QUANTUM NANOSTRUCTURES X.-L. WANG
AND M. OGURA, ETL 870
10:00 (6) STACKED MULTI-QUANTUM-WIRES GROWN ON VICINAL GAAS(LLO)
SURFACES BY MBE T. KATO, T. TAKEUCHI, Y. INOUE, K. INOUE, S. HASEGAWA
AND H. NAKASHIMA, OSAKA UNIV 872
10:10 (7) SHOT NOISE IN SINGLE AND DOUBLE QUANTUM POINT CONTACTS S.
SASAKI, R.C. LIU*, K. TSUBAKI, T. HONDA AND S. TARUCHA, NTT AND
*STANFORD UNIV., U.S.A 874
AB-1: PLENARY SESSION (11:00-11:40)
11:00 (1) QUANTUMPHENOMENA IN NANOELECTRONICS (INVITED) K.V. KLITZING,
MAX-PLANCK-INST., GERMANY 739
AB-2: NEW STRUCTURE DEVICES AND CIRCUITS (11:50-12:50)
11:50 (1) A NOVEL FUNCTIONAL LOGIC GATE USING RESONANT-TUNNELING DEVICES
FOR MULTIPLE-VALUED LOGIC APPLICATIONS T. WAHO, K.J. CHEN AND M.
YAMAMOTO, NTT 740
12:10 (2) NOVEL INSULATED GATE INGAAS HEMT TECHNOLOGY USING SILICON
INTERFACE CONTROL LAYER Y. DOHMAE, S. SUZUKI, T. HASHIZUME AND H.
HASEGAWA, HOKKAIDO UNIV 743 12:30 (3) FABRICATION OF P+ - GATE
INAS-CHANNEL HEMT BASED ON INP R. KOIZUMI, Y. TABUCHI AND K. YOH,
HOKKAIDO UNIV 746
A-7: TRANSPORT PROPERTIES (14:00-15:50)
14:00 (1) CARRIER TRANSPORT IN NANOSCALE STRUCTURES (INVITED) D.K.
FERRY, R. AKIS, S. UDIPI, D. VASILESKA, D.P. PIVIN, JR., K.M. CONNOLLY,
J.P. BIRD^, K. ISHIBASHI, Y. AOYAGI*. T. SUGANO* AND Y. OCHIAI**,
ARIZONA STATE UNIV., *RIKEN, JAPAN AND **CHIBA UNIV., JAPAN, U.S.A 749
14:30 (2) A NOVEL BISTABLE DOUBLE-BARRIER RESONANT TUNNEL DIODE BY
CHARGING EFFECT OF INAS DOTS T. NAKANO, T. NAKAGAWA AND K. YOH, HOKKAIDO
UNIV 752
14:50 (3) ROOM TEMPERATURE OPERATION OF A LATERAL TUNNELING TRANSISTOR
FABRICATED BY PLANE-DEPEN DENT SI DOPING IN NONPLANAR EPITAXY H.
OHNISHI, M. HIRAI, K. FUJITA AND T. WATANABE, ATR 755
15:10 (4) HIGH TEMPERATURE ESTIMATION OF PHASE COHERENT LENGTH OF HOT
ELECTRON USING GALNAS/ INP TRIPLE-BARRIER RESONANT TUNNELING DIODES
GROWN BY OMVPE R. TAKEMURA, M. SUHARA, T. OOBO, Y. MIYAMOTO, K. FURUYA
AND Y. NAKAMURA, TOKYO INST. TECHNOL 758
15:30 (5) CDF2/CAF2 RESONANT TUNNELING DIODE FABRICATED ON SI(LLL) A.
IZUMI, N. MATSUBARA*, Y. KUSHIDA*, K. TSUTSUI* ANDN.S. SOKOLOV**, JAIST,
*TOKYO INST. TECHNOL., AND **RUSSIAN ACADEMY SCIENCES, RUSSIA 761
XXXNI
IMAGE 19
ROOM B
B-6: PHYSICS OF QUANTUM DEVICES II (9:10-10:40)
9:10 (1) DISSIPATION ENGINEERING IN QUANTUM DEVICES (INVITED) J.-P.
LEBURTON, UNIV. ILLINOIS, U.S.A 765
9:40 (2) UNIVERSAL DEPENDENCE OF AVALANCHE BREAKDOWN ON BANDSTRUCTURE:
CHOOSING MATERIALS FOR HIGH-POWER DEVICES J. ALLAM, HITACHI CAMBRIDGE
LAB., U.K 767
10:00 (3) CHARGE STORAGE EFFECTS IN PHEMTS F. SCHUERMEYER, C. CERNY AND
C. BOZADA, WRIGHT LAB., U.S.A 770
10:20 (4) MOBILITY LIMITING FACTORS OF N-CHANNEL SI/SIGE
MODULATION-DOPED SYSTEMS WITH VARIED CHANNEL THICKNESS A. YUTANI, AND Y.
SHIRAKI, UNIV. TOKYO 773
B-7: OXIDE RELIABILITY (14:00-15:20)
14:00 (1) OPTIMUM VOLTAGE SCALING AND STRUCTURE DESIGN FOR THE LOW
VOLTAGE OPERATION OF FN TYPE FLASH EEPROM WITH HIGH RELIABILITY AND
CONSTANT PROGRAMMING TIME S. UENO, H. ODA, N. AJIKA, M. INUISHI AND H.
MIYOSHI, MITSUBISHI 776
14:20 (2) INVESTIGATION OF ONO LAYERS FOR APPLICATION IN ONE TIME
PROGRAMMABLE(OTP) SONOS MEMORIES H. REISINGER, SIEMENS, GERMANY 779
14:40 (3) EXTENDED TDDB MODEL BASED ON ANOMALOUS GATE AREA DEPENDENCE IN
ULTRA THIN SILICON DIOXIDES
K. OKADA, MATSUSHITA ELEC 782
15:00 (4) SPATIAL DISTRIBUTIONS OF INDIVIDUAL TRAPS IN A SI/SI02
INTERFACE T. SAKAMOTO, H. KAWAURA AND T. BABA, NEC 785
ROOM C
SYMPOSIUM II: CONTROL OF E MATERIALS (9:10-16:10)
9:10 (I) DIELECTRIC/SILICON INTERFACE STRUCTURES AND ELECTRICAL
PROPERTIES (INVITED) A. ISHITANI, ASET 788
9:40 (2) THE ROLE OF ATOMIC HYDROGEN IN DEGRADATION AND BREAKDOWN OF
SI02 FILMS (INVITED) J.H. STATHIS AND E. CARTIER, IBM, U.S.A 791
10:10 (3) SI 2P CORE-LEVEL SHIFT ASSIGNMENTS: AN ANALYSIS OF RECENT
EXPERIMENTAL AND THEORETICAL STUDIES
K.Z. ZHANG, L.M. MEEUWENBERG, M.M.B. HOLL AND F.R. MCFEELY*, UNIV.
MICHIGAN, AND *IBM T.J. WATSON LAB., U.S.A 794
11:50 (4) DIELECTRIC PROPERTIES OF VERY THIN FILMS OF BA0.7OSR0.3OTI03
(INVITED) S. BILPDEAU, P. V. BUSKIRK, R. CARL, P. KIRLIN, S. STREIFFER*,
C. BASCERI* AND A. KINGON*, ADVANCED TECHNOLOGY MATERIALS AND *NORTH
CAROLINA STATE UNIV. U.S.A 797
12:20 (5) PROCESS INTEGRATION OF ORTEOS CVD SI02 FOR A COVER FILM ON
FERROELECTRIC CAPACITORS J. KAWAHARA, T. MATSUKI, K. KISHIMOTO, K.
KOYANAGI AND Y. HAYASHI, NEC 800 14:00 (6) MATERIAL OPTIMIZATION OF
BISMUTH BASED MIXED LAYERED SUPERLATTICE FERROELECTRICS FOR HIGH
PERFORMANCE FERAMS (INVITED)
M. AZUMA, MATSUSHITA ELEC 803
14:30 (7) FORMATION OF C-AXIS-ORIENTED BI4TI30I2 FILMS WITH EXTREMELY
FLAT SURFACE BY SPIN-COATING K. TANI, T. YAMANOBE, H. MATSUHASHI AND S.
NISHIKAWA, OKI 806
14:50 (8) PROPOSAL OF A SINGLE-TRANSISTOR-TYPE FERROELECTRIC MEMORY
USING AN SOI STRUCTURE AND EXPERIMENTAL STUDY ON INTERFERENCE PROBLEM IN
WRITE OPERATION H. ISHIWARA, T. SHIMAMURA AND E. TOKUMITSU, TOKYO INST.
TECHNOL 809
15:10 (9) NOVEL POROUS FILMS HAVING LOW DIELECTRIC CONSTANTS SYNTHESIZED
BY A LIQUID PHASE SILYLATION OF SPIN-ON GLASS SOL FOR INTERMETAL
DIELECTRICS N. AOI, MATSUSHITA 812
XXXIV
IMAGE 20
15:30 (10) LOW DIELECTRIC CONSTANT INSULATOR BY DOWNSTREAM PLASMA CVD AT
ROOM TEMPERATURE USING SI(CH3)4/02 A. NARA, AND H. ITOH, TOSHIBA 815
15:50 (11) EFFECT OF BIAS ADDITION ON THE GAP-FILLING PROPERTIES OF
FLUORINATED AMORPHOUS CARBON THIN FILMS GROWN BY HELICON WAVE PLASMA
ENHANCED CHEMICAL VAPOR DEPOSITION K. ENDO, AND T. TATSUMI, NEC 818
ROOM D
D-6: ADVANCED DEVICE FABRICATION TECHNOLOGIES (9:10-10:40)
9:10 (1) MICRO SYSTEMS BY BULK SILICON MICROMACHINING (INVITED) M.
ESASHI, TOHOKU UNIV 821
9:40 (2) A NEW THREE-DIMENSIONAL MULTIPORT MEMORY FOR SHARED MEMORY IN
HIGH PERFORMANCE PARALLEL PROCESSOR SYSTEM K. HIRANO, S. KAWAHITO, T.
MATSUMOTO, Y. KUDOH, S. PIDIN, N. MIYAKAWA*, H. ITANI**, T.
ICHIKIZAKI**, H. TSUKAMOTO** AND M. KOYANAGI, TOHOKU UNIV., *FUJI XEROX
AND
MITSUBISHI HEAVY IND 824
10:00 (3) 3D-TECHNOLOGY FOR ULTRA HIGH DENSITY MOS ARRAYS W.H.
KRAUTSCHNEIDER, A. RUSCH, F. HOFMANN, F. LAU, B. HASLER, A. KOHLHASE, U.
ZIMMERMANN AND E. BERTAGNOLLI, SIEMENS, GERMANY 827
10:20 (4) SHALLOW TRENCH ISOLATION FOR ENHANCEMENT OF DATA RETENTION
TIMES IN GIGA BIT DRAM B.H. ROH, C.S. YOON, D.U. CHOI, M.J. KIM, D.W.
HA, K.N. KIM AND J.W. PARK, SAM SUNG, KOREA 830
D-7: ADVANCED FLASH MEMORIES (11:50-12:50)
11:50 (1) FN PROGRAM TECHNOLOGY OF SECTOR ERASABLE FLASH MEMORY WITH
CONVENTIONAL 2-LAYER POLY SILICON ETOX CELL STRUCTURE
N. SHINMURA, T. TANIGAMI, K. HAKOZAKI, Y. AKIYAMA, S. SATO, K. IGUCHI
AND K. SAKIYAMA, SHARP 833
12:10 (2) HIGH PERFORMANCE SHALLOW TRENCH ISOLATION FOR HIGH DENSITY
FLASH MEMORY CELLS S. DELEONIBUS, M. HEITZMANN, Y. GOBIL, F. MARTIN, O.
DEMOLLIENS, B. GUILLAUMOT*, P.
CANDELIER AND J.C. GUIBERT, LETI AND *SGS-THOMSON, FRANCE 836
12:30 (3) A NEW LOW-RESISTANCE ANTIFUSE WITH PLANAR
METAL/DIELECTRIC/POLY-SI/DIELECTRIC/METAL STRUCTURE
J.T. BAEK, H.J. YOO, S.H. CHUNG*, S.W. KANG* AND B.T. AHN*, ELEC.
TELECOMM. RES. INST., AND *KAIST, KOREA 839
D-8: NOVEL DEVICE STRUCTURES (14:00-15:30)
14:00 (1) TAKING ADVANTAGE OF SEMICONDUCTOR DEVICE PHYSICS TO IMPLEMENT
REAL-TIME PERCEPTION SYSTEMS (INVITED) X. ARREGUIT, AND E. VITTOZ, CSEM,
SWITZERLAND 843
14:30 (2) NON-VOLATILE
METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR(MFIS)FETS USING PLZT/STO/
SI(100) STRUCTURES
E. TOKUMITSU, R. NAKAMURA AND H. ISHIWARA, TOKYO INST. TECHNOL 845
14:50 (3) A NOVEL OPTICAL ADAPTIVE NEURO-DEVICE USING A SPLIT-GATE MOS
TRANSISTOR J.-K. SHIN, E. IO, K. TSUJI, H. YONEZU AND N. OHSHIMA,
TOYOHASHI UNIV. TECHNOL 848 15:10 (4) STUDY OF 4.5 KV MOS-POWER DEVICE
WITH INJECTION ENHANCED TRENCH GATE STRUCTURE M. KITAGAWA, AND A.
NAKAGAWA, TOSHIBA 851
XXXV
|
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| spelling | International Conference on Solid State Devices and Materials 1996 Yokohama Verfasser (DE-588)5209281-1 aut Extended abstracts of the 1996 International Conference on Solid State Devices and Materials August 26 - 29, 1996, Yokohama, Pacifico Yokohama Tokyo Japan Soc. of Applied Physics 1996 XXXV, 885 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electronics Materials Congresses Semiconductors Congresses Solid state electronics Congresses Superconductors Congresses Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Werkstoff (DE-588)4065579-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1996 Yokohama gnd-content Halbleiterbauelement (DE-588)4113826-0 s Werkstoff (DE-588)4065579-9 s DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009292219&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Extended abstracts of the 1996 International Conference on Solid State Devices and Materials August 26 - 29, 1996, Yokohama, Pacifico Yokohama Electronics Materials Congresses Semiconductors Congresses Solid state electronics Congresses Superconductors Congresses Halbleiterbauelement (DE-588)4113826-0 gnd Werkstoff (DE-588)4065579-9 gnd |
| subject_GND | (DE-588)4113826-0 (DE-588)4065579-9 (DE-588)1071861417 |
| title | Extended abstracts of the 1996 International Conference on Solid State Devices and Materials August 26 - 29, 1996, Yokohama, Pacifico Yokohama |
| title_auth | Extended abstracts of the 1996 International Conference on Solid State Devices and Materials August 26 - 29, 1996, Yokohama, Pacifico Yokohama |
| title_exact_search | Extended abstracts of the 1996 International Conference on Solid State Devices and Materials August 26 - 29, 1996, Yokohama, Pacifico Yokohama |
| title_full | Extended abstracts of the 1996 International Conference on Solid State Devices and Materials August 26 - 29, 1996, Yokohama, Pacifico Yokohama |
| title_fullStr | Extended abstracts of the 1996 International Conference on Solid State Devices and Materials August 26 - 29, 1996, Yokohama, Pacifico Yokohama |
| title_full_unstemmed | Extended abstracts of the 1996 International Conference on Solid State Devices and Materials August 26 - 29, 1996, Yokohama, Pacifico Yokohama |
| title_short | Extended abstracts of the 1996 International Conference on Solid State Devices and Materials |
| title_sort | extended abstracts of the 1996 international conference on solid state devices and materials august 26 29 1996 yokohama pacifico yokohama |
| title_sub | August 26 - 29, 1996, Yokohama, Pacifico Yokohama |
| topic | Electronics Materials Congresses Semiconductors Congresses Solid state electronics Congresses Superconductors Congresses Halbleiterbauelement (DE-588)4113826-0 gnd Werkstoff (DE-588)4065579-9 gnd |
| topic_facet | Electronics Materials Congresses Semiconductors Congresses Solid state electronics Congresses Superconductors Congresses Halbleiterbauelement Werkstoff Konferenzschrift 1996 Yokohama |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009292219&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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