Extended abstracts of the 1994 International Conference on Solid State Devices and Materials: August 23 - 26, 1994, Yokohama
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| Format: | Tagungsbericht Buch |
| Sprache: | Undetermined |
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Tokyo
Japan Soc. of Applied Physics
1994
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| Beschreibung: | XXXVI, 1010 S. Ill., graph. Darst. |
| ISBN: | 4930813603 |
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| adam_text | IMAGE 1
EXTENDED ABSTRACTS OF
THE 1994 INTERNATIONAL CONFERENCE ON
SOLID STATE DEVICES AND MATERIALS
AUGUST 23-26, 1994
YOKOHAMA
PACIFICO YOKOHAMA
SPONSORED BY
THE JAPAN SOCIETY OF APPLIED PHYSICS
IN COOPERATION WITH
THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS OF
JAPAN IEEE ELECTRON DEVICES SOCIETY IEEE TOKYO SECTION
THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN THE ELECTROCHEMICAL
SOCIETY OF JAPAN THE INSTITUTE OF TELEVISION ENGINEERS OF JAPAN AMERICAN
VACUUM SOCIETY
IMAGE 2
CONTENTS
SYMPOSIUM 1-1: APCT 94 EPITAXIAL GROWTH (14:00-15:50)
14:00 (1) GROWTH DYNAMICS OF III-V SEMICONDUCTOR FILMS (INVITED) B.A.
JOYCE, SEMICONDUCTOR MATERIALS IRC, U.K 1
14:30 (2) TWO DIMENSIONAL GROWTH OF GAN ON VARIOUS SUBSTRATES BY GAS
SOURCE MOLECULAR BEAM EPITAXY USING RF-RADICAL NITROGEN SOURCE A.
KIKUCHI, H. HOSHI AND K. KISHINO, SOPHIA UNIV., JAPAN 4
14:50 (3) PLASMA-ASSISTED MOCVD GROWTH OF GAAS/GAN/GAAS THIN-LAYER
STRUCTURES BY N-AS REPLACEMENT USING N-RADICALS M. SATO, NTT, JAPAN 7
15:10 (4) ANOMALOUS STEP BUNCHING OF A STRAINED INGAAS EPITAXIAL LAYER
GROWN ON AN OFF-ANGLED GAAS SUBSTRATE K. FUKAGAI AND S. ISHIKAWA, NEC,
JAPAN 10
15:30 (5) SURFACE SECOND-HARMONIC GENERATION (SHG) STUDY OF EPITAXIAL
GROWTH OF GAAS C. YAMADA AND T. KIMURA, OTL, JAPAN 13
SYMPOSIUM 1-2: APCT 94 NOVEL PROCESSING TECHNOLOGIES (16:10-18:00)
16:10 (1) NEW CHALLENGES FOR DELTA-LIKE CONFINEMENT OF IMPURITIES IN
GAAS (INVITED) K.H. PLOOG AND L. DAWERITZ, PAUL-DRUDE-INST.
FESTKORPERELEKTRONIK, F.R.G 16 16:40 (2) CONTROL OF AS PRECIPITATION IN
LOW TEMPERATURE GAAS BY ELECTRONIC AND ISOELECTRONIC DELTA DOPING
T.M. CHENG, C.Y. CHANG AND J.H. HUANG, NAT L CHIAO TUNG UNIV., TAIWAN,
CHINA 19 17:00 (3) STRESS RELAXATION OF GAAS ON SI BY LASER PULSE
IRRADIATION H. UCHIDA, T. SOGA, H. NISHIKAWA, T. JIMBO AND M. UMENO,
NAGOYA INST. TECH.,
JAPAN 22
17:20 (4) IMPROVEMENTS IN THE ELECTRICAL ACTIVITY OF NITROGENDOPED
P-TYPE ZNSE DUE TO INGAP BUF FER LAYER S. SAITO, Y. NISHIKAWA, J.
RENNIE, M. ONOMURA, P.J. PARBROOK, K. NITTA, M. ISHIKAWA AND G.
HATAKOSHI, TOSHIBA, JAPAN 25
17:40 (5) ANTI-PHASE DIRECT BONDING OF INP AND GAAS AND ITS APPLICATION
TO SEMICONDUCTOR LASERS Y. OKUNO, K. UOMI, M. AOKI, T. TANIWATARI, M.
SUZUKI AND M. KONDOW, HITACHI, JAPAN 28
SYMPOSIUM 1-3: APCT 94 SCANNING PROBE TECHNOLOGY I (9:10-10:40)
9:10 (1) SINGLE ATOM MANIPULATION AND ITS REAL-TIME DETECTION BY STM
(INVITED) M. AONO, E. AONO ATOMCRAFT PROJECT AND RIKEN, JAPAN 31
9:40 (2) DIRECT OBSERVATION OF A SCANNING TUNNELING MICROSCOPE TIP APEX
USING A TRANSMISSION ELECTRON MICROSCOPE M.I. LUTWYCHE AND Y. WADA,
HITACHI, JAPAN 34
10:00 (3) OBSERVATION OF POSITIVELY CHARGED TRAP SITE IN SILICON OXIDE
LAYER WITH AN ATOMIC FORCE MICROSCOPE Y. FUKANO, T. OKUSAKO, T.
UCHIHASHI, Y. SUGAWARA, Y. YAMANISHI*, T. OASA* AND S. MORITA, HIROSHIMA
UNIV., AND *SUMITOMO METAL IND., JAPAN 37
10:20 (4) EVALUATION OF THIN SI02 LAYERS BY BEAM ASSISTED SCANNING
TUNNELING MICROSCOPE S. HEIKE, Y. WADA, S. KONDO, M. LUTWYCHE, K.
MURAYAMA* AND H. KURODA*, HITACHI,
AND *HITACHI CONSTRUCTION MACHINERY, JAPAN 40
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SYMPOSIUM 1-4: APCT 94 SCANNING PROBE TECHNOLOGY II (11:00-12:30)
11:00 (1) AFM-BASED FABRICATION OF SEMICONDUCTOR NANOSTRUCTURES
(INVITED) E.S. SNOW, P.M. CAMPBELL AND P.J. MCMARR, NAVAL RES. LAB.,
U.S.A 43
11:30 (2) FIRST APPLICATION OF STM NANO-METER SIZE OXIDATION PROCESS TO
PLANAR-TYPE MIM DIODE
K. MATSUMOTO, S. TAKAHASHI, M. ISHII, M. HOSHI*, A. KUROKAWA, S.
ICHIMURA AND A. ANDO, ETL AND *NISSAN MOTOR, JAPAN 46
11:50 (3) AFM OBSERVATION OF SELF-ASSEMBLED MONOLAYER FILMS ON GAAS(LLO)
H. OHNO, M. MOTOMATSU, W. MIZUTANI* AND H. TOKUMOTO*, JRCAT-ATP, AND
*JRCAT-NAIR, JAPAN 49
12:10 (4) 2X6 SURFACE RECONSTRUCTION OF SULFUR-TERMINATED GAAS (001)
OBSERVED BY SCANNING TUN
NELING MICROSCOPY
S. TSUKAMOTO AND N. KOGUCHI, NAT L RES. INST, FOR METALS, JAPAN 52
SYMPOSIUM 1-5: APCT 94 NANOSTRUCTURES I (14:00-15:40)
14:00 (1) SPECTROSCOPY OF QUANTUM DOTS AND ANTIDOTS (INVITED) D.
HEITMANN, UNIV. HAMBURG, F.R.G 55
14:30 (2) DOPED NANOCRYSTALS OF SEMICONDUCTORS-A NEW CLASS OF
LUMINESCENT MATERIALS (INVITED) R.N. BHARGAVA, NANOCRYSTALS TECHNOLOGY,
U.S.A 58
15:00 (3) INGAAS/GAAS QUANTUM DOTS (~15NM) GROWN BY MOCVD M. NISHIOKA,
J. OSHINOWO, S. ISHIDA AND Y. ARAKAWA, UNIV. TOKYO, JAPAN 60 15:20 (4)
BLUE-SHIFTED PHOTOLUMINESCENCE FROM GAAS/ALGAAS QUANTUM-WELL BOX
FABRICATED BY
LOW-DAMAGE WET CHEMICAL ETCHING K. MOMMA, N. OGASAWARA, S. FUKATSU* AND
Y. SHIRAKI*, UNIV. ELECTRO-COMM., AND *UNIV. TOKYO, JAPAN 63
SYMPOSIUM 1-6: APCT 94 NANOSTRUCTURES II (16:00-17:50)
16:00 (1) INGAAS STRAINED QUANTUM WIRE STRUCTURES: OPTICAL PROPERTIES
AND LASER APPLICATIONS (INVITED)
J. CHRISTEN, E. KAPON*, M. GRUNDMANN, M. WALTHCR** AND D. BIMBERG,
OTTO-VONGUERICKE-UNIV., F.R.G., *SWISS FEDERAL INST. TECH., SWITZERLAND
AND **BELLCORE, U.S.A 66 16:30 (2) CATHODOLUMINESCENCE OF GAAS/ALAS
QUANTUM WELLS GROWN ON STRIPE AND SQUARE PATTERNS BY MOLECULAR BEAM
EPITAXY
I. MATSUYAMA, M. LOPEZ, N. TANAKA AND T. ISHIKAWA, OTL, JAPAN 69
16:50 (3) COMPOSITION MODULATION IN QUANTUM WIRE STRUCTURES ON VICINAL
(110) GAAS STUDIED BY PHOTOLUMINESCENCE K. INOUE, H.K. HUANG, M.
TAKEUCHI, K. KIMURA, H. NAKASHIMA, M. IWANE, O. MATSUDA AND K. MURASE,
OSAKA UNIV., JAPAN 72
17:10 (4) CONTROL OF CURRENT IN 2DEG CHANNEL BY OXIDE WIRE FORMED WITH
AFM M. ISHII AND K. MATSUMOTO, ETL, JAPAN 75
17:30 (5) LOCAL INCORPORATION OF LATERAL PIEZOELECTRIC FIELDS IN
STRAINED III/V SEMICONDUCTOR NANOSTRUCTURES
K.H. PLOOG AND M. ILG, PAUL-DRUDE-INST., F.R.G 78
SYMPOSIUM 1-7: APCT 94 VISIBLE LIGHT SOURCE (9:10-10:40)
9:10 (1) INGAN/ALGAN DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING DIODES
(INVITED) S. NAKAMURA, NICHIA CHEMICAL INDUSTRIES LTD, JAPAN 81
9:40 (2) 650 NM-ALGALNP VISIBLE LIGHT-LD WITH DRY-ETCHED MESA STRIPE T.
YOSHIKAWA, Y. SUGIMOTO, H. HOTTA, K. KOBAYASHI, F. MIYASAKA AND K.
ASAKAWA, NEC, JAPAN 84
10:00 (3) PICOSECOND OPTICAL BISTABILITY OF ZNS-ZNTE/GAAS MQWS ON
REFLECTION AT ROOM TEMPERATURE D.Z. SHEN, X.W. FAN AND B.J. YANG,
ACADEMIA SINICA, CHINA 87
10:20 (4) SINGLE CHIP INTEGRATION OF LED, WAVEGUIDE AND MICROMIRRORS T.
NAGATA, T. NAMBA, K. MIYAKE, T. DOI, T. MIYAMOTO, Y. KURODA, S.
YOKOYAMA, S. MIYAZAKI, M. KOYANAGI AND M. HIROSC, HIROSHIMA UNIV., JAPAN
90
XVI
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SYMPOSIUM 1-8: APCT 94 BEAM-INDUCED PROCESS (16:00-17:50)
16:00 (1) ELECTRON-BEAM INDUCED ETCHING AS A KEY PROCESS IN
THROUGH-VACUUM FABRICATION OF GAAS-ALGAAS NANOHETEROSTRUCTURES (INVITED)
Y. KATAYAMA, T. ISHIKAWA, N. TANAKA, M. LOPEZ, I. MATSUYAMA, Y. IDE AND
M. YAMADA, OTL, JAPAN 93
16:30 (2) EB PATTERNING MECHANISM OF GAAS OXIDE MASK LAYERS USED IN
IN-SITU EB LITHOGRAPHY N. TANAKA, M. LOPEZ, I. MATSUYAMA AND T.
ISHIKAWA, OTL, JAPAN 96
16:50 (3) DIRECT PATTERNING OF THE CURRENT CONFINEMENT STRUCTURE FOR
P-TYPE COLUMN-ILL NITRIDES BY LOW-ENERGY ELECTRON BEAM IRRADIATION
TREATMENT M. INAMORI, H. SAKAI, T. TANAKA*, H. AMANO AND I. AKASAKI,
MEIJO UNIV., AND *PIONEER, JAPAN 99
17:10 (4) NATURAL SUPERLATTICE DISORDERING IN GALNP/ALGALNP BY ULTRA-LOW
ENERGY ION EXPOSURE J. HOMMEL, B. HOHING, C. GENG, F. SCHOLZ AND H.
SCHWEIZER, UNIVERSITAT STUTTGART,
F.R.G 102
17:30 (5) DISORDERING OF CDZNSE/ZNSE STRAINEDLAYER SUPERLATTICESBY SI
ION-IMPLANTATIONANDLOWTEMPERATURE ANNEALING T. YOKOGAWA, J.L. MERZ, H.
LUO*. J.K. FURDYNA*, M. KUTTLER**, D. BIMBERG** AND S. LAU, UNIV.
CALIFORNIA, U.S.A., *UNIV. NOTRE DAME AND **TECHNISCHE UNIV. BERLIN,
F.R.G 105
SYMPOSIUM 1-9: APCT 94 CHARACTERIZATION I (9:10-10:50)
9:10 (1) PHOTOREFLECTANCE AND PHOTOLUMINESCENCE STUDY OF DIRECT-AND
INDIRECT-GAP BAND LINEUPS OF GAASP/GAP STRAINED QUANTUM WELLS H.
YAGUCHI, S. HASHIMOTO, T. SUGITA, Y. HARA, K. ONABE, Y. SHIRAKI AND R.
ITO, UNIV. TOKYO, JAPAN 108
9:30 (2) OPTICAL STUDY OF EXCITON OSCILLATOR STRENGTH IN SEMICONDUCTOR
QUANTUM WELLS B. ZHANG, S.S. KANO*, R. ITO AND Y. SHIRAKI, UNIV. TOKYO,
AND *IBM, JAPAN ILL 9:50 (3) EXCITATION AND RELAXATION OF YB 4/-SHELL IN
INP HOST-ENERGY COMPENSATION BY A MULTI PHONON PROCESS
A. TAGUCHI AND K. TAKAHEI, NTT, JAPAN 114
10:10 (4) QUANTITATIVE DETERMINATION OF THE ORDER PARAMETER IN ORDERED
III-V SEMICONDUCTORS BY TEM AND TED M.H. BODE, S. KURTZ, D.J. ARENT, K.
BERTNESS AND J. OLSON, NAT L RENEWABLE ENERGY LAB., U.S.A 117
10:30 (5) DLTS STUDY OF DEEP LEVELS IN SI-DOPED INXALI_XAS LAYERS GROWN
BY MOLECULAR BEAM EPITAXY H. TOMOZAWA, A. MALININ, T. HASHIZUME AND H.
HASEGAWA, HOKKAIDO UNIV., JAPAN... 120
SYMPOSIUM MO: APCT 94 OPTICAL DEVICES I (11:10-12:40)
11:10 (1) METALLIC AND DIELECTRIC PHOTONIC CRYSTALS FOR PHOTON CONTROL
(INVITED) E. YABLONOVITCH AND M. SICKMILLER, UCLA ELECTRICAL ENG G
DEPT., U.S.A 123 11:40 (2) GALNAS/GAAS MICRO-ARC RING SEMICONDUCTOR
LASER S. MITSUGI, J. KATO, F. KOYAMA, A. MATSUTANI, T. MUKAIHARA AND K.
IGA, TOKYO INST.
TECH., JAPAN 124
12:00 (3) TWO-DIMENSIONAL BI-PERIODIC GRATING COUPLED ONE- AND TWO-COLOR
QUANTUM WELL INFRARED PHOTODETECTORS
K.L. TSAI, C.P. LEE, J.S. TSANG, H.R. CHEN AND D.C. LIU, NAT L CHIAO
TUNG UNIV., TAIWAN, CHINA 127
12:20 (4) HOT ELECTRON EFFECTS IN INFRARED MULTIPLE-QUANTUM-WELL
PHOTOTRANSISTOR V. RYZHII AND M. ERSHOV, UNIV. AIZU, JAPAN 130
XVU
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SYMPOSIUM ML: APCT 94 OPTICAL DEVICES II (14:00-15:50)
00 (1) PARTICLE STATISTICS AND QUANTUM DYNAMICS IN A SEMICONDUCTOR
QUANTUM-WELL MICROCAVITY (INVITED)
J. JACOBSON, H. CAO, G. BJORK, S. PAU AND Y. YAMAMOTO, STANFORD UNIV.,
U.S.A 133 30 (2) WAVELENGTH FILTERING OPERATION IN ABSORPTIVE-GRATING
GAIN-COUPLED DFB LASER T. OTANI, T.K. SUDOH, Y. NAKANO, K. TADA AND H.
ISHIKURO, UNIV. TOKYO, JAPAN 13$ 50 (3) FORMATION OF HIGH CONTRAST
PERIODIC CORRUGATIONS BY OPTIMIZING OPTICAL PARAMETERS OF
PHOTORESISTS IN 325NM LASER HOLOGRAPHIC EXPOSURE K. OKAMOTO, Y. NAKANO*
AND K. TADA*, NIKON, AND *UNIV. TOKYO, JAPAN 139 10 (4)
ULTRAHIGH-REFLECTIVITY (99.8%) INGAP/GAAS MULTILAYER REFLECTOR GROWN BY
MOCVD FOR HIGHLY RELIABLE 0.98-/;M VCSELS
K. SHINODA, K. HIRAMOTO, K. UOMI AND T. TSUCHIYA, HITACHI, JAPAN 142
30 (5) PHOTONIC DEVICES BASED ON CRYSTALLINE ORGANIC SEMICONDUCTORS FOR
OPTOELECTRONIC IN TEGRATED CIRCUITS
W. KOWALSKY, C. ROMPF AND D. AMMERMANN, UNIV. ULM, F.R.G 145
PB-1 SYMPOSIUM I: APCT 94 EPITAXIAL GROWTH
(1) LOW TEMPERATURE GROWTH OF INGAAS ON GAAS(100) BY CHEMICAL BEAM
EPITAXY USING UNPRCCRACKED MONOETHYLARSINE J.-R. RO, S.-J. PARK, S.-B.
KIM AND E.-H. LEE, ELEC. & TELECOM. RES. INST., KOREA 148
(2) STM STUDY OF ULTRA THIN FE FILMS GROWN ON GAAS(100) SURFACE H.
TAKESHITA* **, H. AKINAGA*, M. EHINGER***, Y. SUZUKI*, K. ANDO*** AND K.
TANAKA*, *NAIR, **NIHON UNIV. AND ***ETL, JAPAN 151
(3) COMPOSITIONAL NUN-UNIFORMITY OF SELECTIVELY GROWN GAXINJ-XP FROM
HIGH RESOLUTION DOUBLE-CRYSTAL X-RAY MEASUREMENT S.-H. CHAN, S.M. SZE
AND C.-Y. CHANG, NAT L CHIAO TUNG UNIV., TAIWAN, CHINA 154 (4)
GENERATION OF THE SURFACE CROSS-HATCH PATTERN IN IN*GA: XAS/GAAS
EPITAXIAL LAYERS
GROWN BY MOCVD M. YOON, J.-H. BAEK, B. LEE, H.-H. PARK AND E.-H. LEE,
ELEC. TELECOMM., KOREA 157 (5) IN SITU ANALYSIS OF TWO-DIMENSIONAL
DISTRIBUTION OF STRESSES IN GROWING FILMS S. TAMULEVICIUS, M.
ANDRULEVICIUS, A. MATIUKAS AND L. PRANEVICIUS*, KAUNAS UNIV.
TECH., AND *VYTATUTAS MAGNUS UNIV., LITHUANIA 161
(6) VERTICAL TRANSPORT PROPERTIES OF PHOTOGENERATED CARRIER IN
INGAAS/GAAS STRAINED MULTI
PLE QUANTUM WELLS
T. KITATANI, Y. YAZAWA, J. MINEMURA, K. TAMURA AND T. WARABISAKO,
HITACHI, JAPAN... 163 (7) COMPOSITIONAL DISORDERING OF ALGAAS/GAAS
SUPERLATTICES BY LOW TEMPERATURE GROWN GAAS
J.S. TSANG, C.P. LEE, J.C. FAN, K.L. TSAI AND H.R. CHEN, NAT L CHIAO
TUNG UNIV., TAIWAN 166
(8) GROWTH MODE TRANSITION IN GAAS/GAP(001) BY MOLECULAR BEAM EPITAXY M.
YOSHIKAWA, T. NOMURA, K. ISHIKAWA AND M. HAGINO, SHIZUOKA UNIV., JAPAN
169 (9) EXTREMELY LOW ENERGY EBE-EPITAXY OF GAAS ON THE FLUORIDES S.M.
HWANG, A. IZUMI, K. KAWASAKI AND K. TSUTSUI, TOKYO INST. TECH., JAPAN
172 (10) FABRICATION OF GAAS/ALGAAS QUANTUM DOTS BY METAL-ORGANIC VAPOR
PHASE EPITAXY ON
PATTERNED GAAS SUBSTRATES J. MOTOHISA, K. KUMAKURA, M. KISHIDA, T.
YAMAZAKI, T. FUKUI, H. HASEGAWA AND K. WADA*, HOKKAIDO UNIV., AND *NTT,
JAPAN 175
(11) MISORIENTATION EFFECTS ON AL COMPOSITION IN ALXGA!.-XAS/GAAS
DETERMINED BY HIGHRESOLUTION XRD J.-H. BAEK, M. YOON, B. LEE AND E.-H.
LEE, ELEC. TELECOMM., KOREA 178
XVIII
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PB-2 SYMPOSIUM I: APCT 94 FABRICATION AND CHARACTERIZATION
TECHNOLOGIES (1) A NOVEL SURFACE PASSIVATION SCHEME FOR COMPOUND
SEMICONDUCTOR USING SILICON INTERFACE CONTROL LAYER AND ITS APPLICATION
TO NEAR-SURFACE QUANTUM WELLS S. KODAMA, S. KOYANAGI AND H. HASEGAWA,
HOKKAIDO UNIV., JAPAN 181
(2) COMBINED EFFECTS OF HIGH-ENERGY SI, ZN AND GA ION IMPLANTATION AND
ANNEALING ON THE REDUCTION OF THREADING DISLOCATIONS IN GAAS ON SI M.
TAMURA AND T. SAITOH, OTL, JAPAN 184
(3) CHARACTERIZATION OF P- AND N-TYPE IMPURITY DIFFUSIONS IN GAAS FROM
DOPED SILICA FILMS K. OKAMOTO, A. YAMADA, Y. SHIMOGAKI*, Y. NAKANO* AND
K. TADA*, NIKON, AND *UNIV. TOKYO, JAPAN 187
(4) NANOFABRICATION OF MATERIALS WITH SCANNING TUNNELING MICROSCOPE S.
KONDO, S. HEIKE, M. LUTWYCHE AND Y. WADA, HITACHI, JAPAN 190
(5) SURFACE NITRIDATION PROCESS OF (100) GAAS BY NHRPLASMA TREATMENT
WITH PLANAR MAGNETIC FIELD
A. MASUDA, Y. YONEZAWA*, A. MORIMOTO AND T. SHIMIZU, KANAZAWA UNIV., AND
IN DUSTRIAL RES. INST, OF ISHIKAWA PREFECTURE, JAPAN 193
(6) SURFACE MORPHOLOGY OF (NH4)2SX-TREATED GAAS(LOO) INVESTIGATED BY
SCANNING TUNNELING MICROSCOPE J.S. HA, S.-B. KIM, S.-J. PARK AND E.-H.
LEE, ELEC. & TELECOM. RES. INST., KOREA 196
(7) INVESTIGATION OF SURFACE DAMAGE IN GALNAS/GALNASP/INP WIRE
STRUCTURES BY LOWENERGY-REACTIVE-ION ASSISTED RADICAL ETCHING M. TAMURA,
Y. NAGASHIMA, K. KUDO, K.-C. SHIN, S. TAMURA, A. UBUKATA* AND S. ARAI,
TOKYO INST. TECH., AND *NIPPON SANSO, JAPAN 199
(8) OPTICAL PROPERTIES OF LOW TEMPERATURE GROWN GAAS: THE INFLUENCE OF A
HYDROGEN PLASMA TREATMENT J. VETTERHOFFER, J. WEBER AND K. KOHLER*,
MAX-PLANCK-INST., AND *FRAUNHOFER-INST. FUR ANGEWANDTE FESTKORPERPHYSIK,
F.R.G 202
(9) PHOTOELLIPSOMETRY STUDY OF O-DOPED GAAS Y.-M. XIONG, C.C. WONG AND
T. SAITOH, TOKYO UNIV. AGRI. TECH., JAPAN 205 (10) STRUCTURAL
CHARACTERIZATION OF MBE GROWN CUINSE2 EPITAXIAL LAYERS Y. OKADA, R.
SHIOTA, S. NIKI, A. YAMADA, H. OYANAGI AND Y. MAKITA, ETL, JAPAN ....
208 (11) C-V AND EBIC STUDY OF DIRECT SCHOTTKY CONTACTS TO QUANTUM WELLS
FORMED BY IN-SITU
SELECTIVE ELECTROCHEMICAL PROCESS T. HASHIZUME, H. HASEGAWA* AND N.-J.
WU*, HOKKAIDO POLYTECH. COLLEGE, AND *HOKKAIDO UNIV., JAPAN 211
PB-3 SYMPOSIUM I: APCT 94 OPTICAL PHENOMENA
(1) MEASUREMENT OF LONGITUDINAL ELECTRIC FIELD ON COPLANAR TRANSMISSION
LINES BY ELECTROOPTIC SAMPLING
T. ITATANI, T. NAKAGAWA, K. OHTA, Y. SUGIYAMA AND F. KANO*, ETL, AND
*OYAMA NAT L COLLEGE OF TECHNOL., JAPAN 214
(2) INP BASED 2-DIMENSIONAL PHOTONIC BAND STRUCTURE-FABRICATION BY
ANODIZATION METHOD
AND DESIGN- T. BABA AND M. KOMA, YOKOHAMA NAT L UNIV., JAPAN 217
(3) QUANTUM-CONFINED STARK SHIFT DUE TO PIEZOELECTRIC EFFECT IN
INGAAS/GAAS QUANTUM
WELLS GROWN ON (111) A GAAS P. VACCARO, K. TOMINAGA, M. HOSODA, K.
FUJITA AND T. WATANABE, ATR, JAPAN 220
(4) OPTICAL GAIN USING THE THREE BAND MODEL TAKING INTO ACCOUNT THE
EXCITONIC EFFECT
T. UENOYAMA, MATSUSHITA CENTRAL RES. LABS., JAPAN 223
PB-4 SYMPOSIUM I: APCT 94 OPTICAL DEVICES
(1) FIRST FABRICATION OF ALGAAS/GAAS DOUBLE-HETEROSTRUCTURE LED S GROWN
ON GAAS(L 11)A
SUBSTRATES USING ONLY SILICON DOPANT T. EGAWA, Y. NIWANO, K. FUJITA*, K.
NITATORI*. T. WATANABE*, T. JIMBO AND M. UMENO, NAGOYA INST. TECH., AND
*ATR OPTICAL AND RADIO COMMUNICATIONS RES. LABS., JAPAN.. .226
XIX
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(2) POLARIZATION-DEPENDENT EMISSION FROM [112]-ORIENTED GAAS/(AL, GA)AS
QUANTUM WELLS:
A MANIFESTATION OF ANISOTROPIC OPTICAL MATRIX ELEMENTS D. SUN, R.
HENDERSON AND E. TOWE, UNIV. VIRGINIA, U.S.A 229
(3) MSM PHOTODETECTORS AND MODULATORS FOR LONG WAVELENGTH APPLICATIONS:
OPTIMIZATION OF
SOLID SOURCE MBE GROWTH OF AIINAS/(AL)GAINAS-HETEROSTRUCTURES
T. KUMMETZ, M. SICKMOLLER, A. FRICKE, D. SOWADA, J. MAHNFI AND W.
KOWALSKY, UNIV.
ULM, F.R.G 232
(4) MATERIAL CHARACTERIZATION AND OPTIMIZATION FOR ULTRA HIGH SPEED
MSM-PHOTODETECTORS
W. KOWALSKY AND M. SICKMOLLER, UNIV. ULM, F.R.G 235
(5) PHOTOINDUCED HOLE TUNNELING IN RESONANT TUNNELING DIODES
H.Y. CHU, P.W. PARK, S.G. HAN AND E.H. LEE, ELEC. TELECOMM., KOREA 238
(6) THE STUDY OF SWITCH CHARACTERISTICS OF THE OPTICAL ABSORPTION
BISTABILITY IN ZN]_XMNXSE
(0.001 ^X 0.01)
L. ZHIHUA, J. YUMEI, X. LI, H. XIMIN AND D. KAI, ACADEMIA SINICA, CHINA
241
(7) A STUDY ON HOLE TRANSPORT IN P-TYPE GALNASP/INP MULTILAYER
REFLECTORS
T. MIYAMOTO, K. MORI, F. KOYAMA AND K. IGA, TOKYO INST. TECHNOL., JAPAN
244 (8) THEORETICAL ANALYSIS OF DFB LASER INTEGRATED WITH EA MODULATOR
W. SI, Y. LUO, D. LI, K. ZHANG, Y. NAKANO* AND K. TADA*, TSINGHUA UNIV.,
CHINA, AND *UNIV. TOKYO, JAPAN 247
(9) EFFECT OF SPIN-ORBIT SPLIT-OFF BANDS ON LINEAR GAIN AND THRESHOLD
CURRENT DENSITY OF
GALNP/ALGALNP STRAINED QUANTUM WELL LASERS S. KAMIYAMA, T. UENOYAMA, M.
MANNOH AND K. OHNAKA, MATSUSHITA, JAPAN 250
SYMPOSIUM II: SOI TECHNOLOGY (11:10-18:00)
11:10 (1) SOI TECHNOLOGY FOR LOW POWER LOGIC APPLICATIONS (INVITED) P.K.
VASUDEV, SEMATECH, U.S.A 253
11:40 (2) ADVANCES IN THE PRODUCTION OF THIN-FILM BONDED SOI AND ULTRA
FLAT BULK WAFERS USING PLASMA ASSISTED CHEMICAL ETCHING (INVITED) P.B.
MUMOLA AND G.J. GARDOPEE, HUGHES DANBURY, U.S.A 256
12:10 (3) EXTREMELY HIGH SELECTIVE ETCHING OF POROUS SI FOR SINGLE
ETCH-STOP BOND-AND-ETCH-BACK SOI K. SAKAGUCHI, N. SATO, K. YAMAGATA, Y.
FUJIYAMA AND T. YONEHARA, CANON, JAPAN 259 12:30 (4) STRESS-INDUCED
ANOMALOUS GROWTH IN LATERAL SOLID PHASE EPITAXY OF GE-INCORPORATED SI
FILMS
J.H. OH, D.Y. KIM* AND H. ISHIWARA, TOKYO INST. TECH., JAPAN AND
*SAMSUNG, KOREA.. .262 14:00 (5) SOI FOR LOW-VOLTAGE AND HIGH-SPEED CMOS
(INVITED) G. SHAHIDI, T.H. NING, R.H. DENNARD AND B. DAVARI, IBM RES.
DIVISION, U.S.A 265 14:30 (6) SOI TECHNOLOGY FOR LOW-POWER APPLICATIONS
(INVITED)
B.Y. HWANG, M. RACANELLI, M. HUANG, J. FOERSTNER, S. WILSON, T.
WETTEROTH, S. WALD, J. RUGG AND S. CHENG, MOTOROLA, U.S.A 268
15:00 (7) COMPARISON OF FULLY DEPLETED AND PARTIALLY DEPLETED MODE
TRANSISTORS FOR PRACTICAL, HIGHSPEED, LOW-POWER 0.35 /.TM CMOS/SIMOX
CIRCUITS A. YOSHINO, K. KUMAGAI, N. HAMATAKE, S. KUROSAWA AND K.
OKUMURA, NEC, JAPAN.. .271 15:20 (8) SCALING THEORY FOR VLH CONTROLLED
N+-P+ DOUBLE-GATE SOI MOSFETS
K. SUZUKI, Y. TOSAKA, T. TANAKA, A. SATOH AND T. SUGII, FUJITSU LABS.,
JAPAN 274 15:40 (9) SOME PROPERTIES OF SOI GATE-AU-AROUND DEVICES P.
FRANCIS, X. BAIE AND J.P. COLINGE, UNIV. CATHOLIQUE LOUVAIN, BELGIUM 277
16:20 (10) DOUBLE SOI STRUCTURES AND DEVICE APPLICATIONS WITH
HETEROEPITAXIAL A1203 AND SI
M. ISHIDA, Y.T. LEE, T. HIGASHINO, H.D. SEO AND T. NAKAMURA, TOYOHASHI
UNIV. TECHNOL., JAPAN 280
16:40 (11) VOID-FREE BONDED SOI SUBSTRATES FOR HIGH VOLTAGE, HIGH
CURRENT VERTICAL DMOS TYPE POWER ICS T. HAMAJIMA, K. KOBAYASHI, H.
KIKUCHI, K. OKONOGI, K. ARAI, Y. NINOMIYA AND M. TAKAHASHI, NEC, JAPAN
283
17:00 (12) SWITCHING CHARACTERISTICS OF A THIN FILM SOI POWER MOSFET S.
MATSUMOTO, I.-J. KIM, T. SAKAI, T. FUKUMITSU AND T. YACHI, NTT, JAPAN
286
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17:20 (13) IMPROVED LATCH-UP CHARACTERISTICS OF THE LIGBT WITH THE P-*
CATHODE WELL ON THE SOI SUBSTRATE
B.H. LEE, CM. YUN, D.S. BYEON, M.K. HAN AND Y.I. CHOI*, SEOUL NAT L
UNIV., AND *AIOU UNIV., KOREA 289
17:40 (14) NUMERICAL PREDICTION FOR 2GHZ RF AMPLIFIER OF SOI POWER
MOSFET I. OMURA AND A. NAKAGAWA, TOSHIBA, JAPAN 292
PA-1 SYMPOSIUM II: SOI TECHNOLOGY
(1) AN INVESTIGATION ON THE SHORT CHANNEL EFFECT FOR 0.1/;M SOIMOSFET
USING EQUIVALENT ONE DIMENSIONAL MODEL R. KOH AND H. KATO, NEC, JAPAN
295
(2) SCALING MERITS OF ULTRA THIN FILM SOI/CMOSFET S FOR LOW POWER
DISSIPATION S. WARASHINA, O. TSUBOI, K. SUKEGAWA AND N. SATO, FUJITSU,
JAPAN 298
(3) TWO-DIMENSIONAL ANALYTICAL MODELING OF THE LDD CONDITION INFLUENCE
ON SHORT-CHANNEL EFFECTS IN SOI MOSFET S H.-O. JOACHIM, Y. YAMAGUCHI, Y.
INOUE AND N. TSUBOUCHI, MITSUBISHI, JAPAN 301 (4) CHARACTERIZATION OF A
COMPLEX MULTILAYER STRUCTURE ON A SILICON-ON-INSULATOR WAFER USING
SPECTROSCOPIC ELLIPSOMETRY M.E. EL-GHAZZAWI AND T. SAITOH, TOKYO UNIV.
AGRI. TECH., JAPAN 304
(5) INTELLIGENT POWER IC WITH PARTIAL SOI STRUCTURE
H. YAMAGUCHI, H. HIMI, S. FUJINO AND T. HATTORI, NIPPONDENSO, JAPAN 307
SYMPOSIUM III: SINGLE ELECTRON TUNNELING (14:00-17:50)
14:00 (1) DEVICE APPLICATIONS OF THE SINGLE CHARGE TUNNELING (INVITED)
D. AVERIN, STATE UNIV. NEW YORK, U.S.A 311
14:30 (2) THE MULTIPLE-TUNNEL JUNCTION (MTJ) AND ITS APPLICATION TO
SINGLE-ELECTRON MEMORY AND LOGIC (INVITED) K. NAKAZATO AND H. AHMED,
HITACHI CAMBRIDGE LAB., U.K 313
15:00 (3) THERMALLY ENHANCED CO-TUNNELING OF SINGLE ELECTRONS IN A SI
QUANTUM DOT AT 4.2 K H. MATSUOKA AND S. KIMURA, HITACHI, JAPAN 316
15:20 (4) NOVEL SI RESONANT TUNNELING DEVICE K. YUKI, Y. HIRAI, K.
MORIMOTO, K. INOUE, M. NIWA AND J. YASUI, MATSUSHITA, JAPAN... 319 16:10
(5) NANOMETER SCALE MOSFETS AND STM PATTERNING ON SI (INVITED) J.R.
TUCKER, C.L. WANG, J.W. LYDING, T.C. SHEN AND G.C. ABELN, UNIV.
ILLINOIS,
U.S.A 322
16:40 (6) ROOM-TEMPERATURE SINGLE-ELECTRON DEVICES (INVITED) K. YANO, T.
ISHII, T. HASHIMOTO, T. KOBAYASHI, F. MURAI AND K. SEKI, HITACHI,
JAPAN... 325 17:10 (7) MONTE CARLO STUDY OF SINGLE-ELECTRONIC DEVICES M.
KIRIHARA, N. KUWAMURA, K. TANIGUCHI AND C. HAMAGUCHI, OSAKA UNIV., JAPAN
328 17:30 (8) TUNNEL-JUNCTION-LOAD SET LOGIC
H. FUKUI, M. FUJISHIMA AND K. HOH, UNIV. TOKYO, JAPAN 331
PA-2 SYMPOSIUM III: SINGLE ELECTRON TUNNELING
(1) DYNAMIC CHARACTERISTICS OF INVERTER CIRCUITS USING SINGLE ELECTRON
TRANSISTORS
N. YOSHIKAWA, H. ISHIBASHI AND M. SUGAHARA, YOKOHAMA NAT L UNIV., JAPAN
334 (2) SIMULATING THE MOTION OF SINGLE ELECTRON WAVE PACKETS THROUGH
MESOSCOPIC DEVICES
G. FASOL, UNIV. TOKYO, JAPAN 337
SYMPOSIUM IV: NEURODEVICES AND NEUROCHIPS (13:50-18:10)
13:50 (1) DEVELOPMENT OF NEURAL NETWORK MICROELECTRONICS IN EUROPE
(INVITED) U. RAMACHER, TECHNICAL UNIV. DRESDEN, F.R.G 341
14:20 (2) COMPARISON BETWEEN OPTICAL AND ELECTRICAL IMPLEMENTATION OF
NEURAL NETWORKS (INVITED) K. KYUMA, J. OHTA AND Y. ARIMA, MITSUBISHI,
JAPAN 343
XXI
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14:50 (3) A NEURON-MOS NEURAL NETWORK USING LOW-POWER
SELF-LEARNING-COMPATIBLE SYNAPSE CELLS
T. SHIBATA, H. KOSAKA, H. ISHII AND T. OHMI, TOHOKU UNIV., JAPAN 345
15:10 (4) KOHSIP - A DEDICATED VLSI-PROCESSOR FOR KOHONEN S
SELF-ORGANIZING MAP A. KONIG, J. REIMERS AND M. GLESNER, DARMSTADT UNIV.
TECH., F.R.G 349
15:30 (5) A STANDALONE HARDWARE-BASED LEARNING SYSTEM T.G. CLARKSON AND
C.K. NG*, KING S COLLEGE LONDON, U.K., AND *CITY POLYTECHNIC OF
HONG KONG, HONG KONG 352
16:10 (6) WHAT DO WE LEARN FROM THE RETINA ? (INVITED) T. YAGI, KYUSHU
INST. TECHNOL., JAPAN 355
16:40 (7) DIGITAL IMPLEMENTATION OF NEURAL NETWORKS: FROM GENERIC CHIPS
TO SPECIFIC BLOCKS
(INVITED)
M. DURANTON, LABORATOIRE D ELECTRONIQUE PHILIPS, FRANCE 358
17:10 (8) FILM QUALITY DEPENDENCE OF ADAPTIVE-LEARNING PROCESSES IN
NEURODEVICES USING FERROELEC TRIC PZT FILMS
E. TOKUMITSU, R. NAKAMURA, K. ITANI AND H. ISHIWARA, TOKYO INST. TECH,
JAPAN 361 17:30 (9) NEW APPROACH TO HARDWARE IMPLEMENTATION OF NEURAL
CIRCUITS USING SUPERCONDUCTIVE DEVICES
Y. MIZUGAKI, K. NAKAJIMA, Y. SAWADA AND T. YAMASHITA, TOHOKU UNIV.,
JAPAN 364 17:50 (10) DIFFERENT APPROACHES FOR IMPLEMENTING CELLULAR
NEURAL NETWORKS WITH ADJUSTABLE TEMPLATE COEFFICIENTS
A. PAASIO, K. HALONEN AND V. PORRA, HELSINKI UNIV. TECH., FINLAND 367
PC-4 SYMPOSIUM IV: NEURODEVICES AND NEUROCHIPS
(1) AN OPTICAL ADAPTIVE DEVICE AND ITS APPLICATION TO A COMPETITIVE
LEARNING CIRCUIT
K. TSUJI, H. YONEZU, K. HOSONO, K. SHIBAO, N. OHSHIMA AND K. PAK,
TOYOHASHI UNIV. TECHNOL., JAPAN 370
(2) ACTIVE HOLLOW FOUR QUADRANT ORIENTATION DETECTOR ARRAY FOR
APPLICATIONS TO PATTERN
RECOGNITION K.-C. LIN AND S.-C. LEE, NAT L TAIWAN UNIV., TAIWAN, CHINA
373
(3) NOVEL PULSE-MODE NEURAL CIRCUITS BASED ON AN ALGAAS-GAAS
MULTI-QUANTUM WELL DIODE
C. SONG AND K.P. ROENKER*, DONG-A UNIV., KOREA, AND *UNIV. CINCINNATI,
U.S.A 376 (4) A PULSATING NEURAL NETWORK
H. WON, S. SATO, K. NAKAJIMA AND Y. SAWADA, TOHOKU UNIV., JAPAN 379
(5) HARDWARE-ORIENTED LEARNING ALGORITHM IMPLEMENTED ON SILICON USING
NEURON MOS
TECHNOLOGY H. ISHII, T. SHIBATA AND T. OHMI, TOHOKU UNIV., JAPAN 382
(6) SUPERIOR GENERALIZATION CAPABILITIES OF NEURON-MOS NEURAL NETWORKS
IN MIRROR-SYMMETRY
PROBLEM LEARNING S. KONDO, T. SHIBATA AND T. OHMI, TOHOKU UNIV., JAPAN
385
(7) PARALLEL IMPLEMENTATIONS OF NEURAL NETWORKS USING THE L-NEURO 2.0
ARCHITECTURE
C. DEJEAN AND F. CAILLAUD, PHILIPS, FRANCE 388
(8) THE PHRASES NEURO-COPROCESSOR COST EFFECTIVE HANDWRITING RECOGNITION
FOR PERSONAL
DIGITAL ASSISTANT
M. HERVIEU AND J.Y. BRUNEI, PHILIPS, FRANCE 391
(9) ARAMYS-A BIT-SERIAL SIMD-PROCESSOR FOR FAST PARALLEL NEAREST
NEIGHBOR SEARCH AND ASSOCIATIVE PROCESSING A. KONING, P. WINDIRSCH AND
M. GLENSNER, DARMSTADT UNIV. TECH., F.R.G 394
MAIN HALL
A-0: OPENING SESSION (9:10-12:25)
9:10 (0) WELCOME ADDRESS K. TADA, ORGANIZING COMMITTEE CHAIRPERSON 9:20
(1) DEVICES FOR THE FUTURE: A PEEK INTO THE NEXT CENTURY (INVITED) H.
KROEMER, UNIV. CALIFORNIA, U.S.A 397
XXN
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10:00 (2) SCOPE OF ATOM TECHNOLOGY PROJECT-TOWARD SELF
ORGANIZATION -(INVITED) E. MARUYAMA, JRCAT, JAPAN 400
10:50 (3) SI LSI AS A POST SI LSI (INVITED)
Y. HAYASHI, SONY, JAPAN 403
11:30 (4) SOI TECHNOLOGY FOR VLSI (INVITED) S.S. IYER, SIBOND, U.S.A 406
12:10 (5) SSDM AWARDS PRESENTATION
ROOM A
A-L: ADVANCED SURFACE ENGINEERING OF SI (14:00-15:50) 14:00 (1) XPS
STUDIES ON OXIDATION OF SI (INVITED) T. HATTORI, MUSASHI INST. TECHNOL.,
JAPAN 410
14:30 (2) A NEW INSIGHT INTO ATOMIC SCALE MORPHOLOGY OF H-TERMINATED
SI(100) SURFACES STUDIED BY FT-IR-ATR AND SCANNING PROBE MICROSCOPIES
C.H. BJORKMAN, M. FUKUDA, T. YAMAZAKI, S. MIYAZAKI AND M. HIROSE,
HIROSHIMA UNIV., JAPAN 413
14:50 (3) EFFECTS OF H-TERMINATION OF SI(100) SURFACES ON ELECTRICAL
CHARACTERISTICS OF METAL/SILICON INTERFACES
S. ZAIMA, J. KOJIMA, M. HAYASHI, H. IKEDA, H. IWANO AND Y. YASUDA,
NAGOYA UNIV., JAPAN 416
15:10 (4) THE IMPORTANCE OF H202 DECOMPOSITION IN SILICON SURFACE
CLEANING H.F. SCHMIDT, M. MEURIS, P.W. MERTENS, A.L.P. ROTONDARO, M.M.
HEYNS, T.Q. HURD* AND Z. HATCHER**, IMEC, BELGIUM, *TEXAS INSTRUMENTS,
U.S.A. AND **ASHIAND CHEMICAL, U.S.A 419
15:30 (5) AN INEXPENSIVE DIFFUSION BARRIER TECHNOLOGY FOR POLYCIDE GATE
ELECTRODES WITH AN SIN LAYER FORMED WITH ECR NITROGEN PLASMA T. HOSOYA,
K. MACHIDA, K. IMAI AND E. ARAI, NTT, JAPAN 422
A-2: ADVANCED CLEANING TECHNOLOGY (16:10-17:50)
16:10 (1)
16:30 (2)
16:50 (3)
17:10 (4)
17:30 (5)
METAL REMOVAL FROM A SILICON SURFACE BY UV IRRADIATION IN PURE WATER M.
KAGEYAMA, M. MIYASHITA AND H. KUBOTA, TOSHIBA, JAPAN 425
CLEANING TECHNOLOGY AND ANALYSIS TECHNOLOGY FOR HYDROCARBON
CONTAMINATION ON SI WAFER SURFACE N. YONEKAWA, S. YASUI AND T. OHMI,
TOHOKU UNIV., JAPAN 428
ESTM/AFM OBSERVATIONS ON SI(LLL) IN SEVERAL SOLUTIONS A. ANDO*, K.
MIKI*, T. SHIMIZU*, K. MATSUMOTO*, Y. MORITA** AND H. TOKUMOTO*.**,
*ETL, AND **NAIR, JAPAN 431
QUANTUM CHEMICAL INVESTIGATION OF METAL ADSORPTION MECHANISM ONTO
SILICON SURFACE IN CLEANING SOLUTION M. MIYASHITA, H. KUBOTA, Y.
MATSUSHITA, R. YOSHIMURA AND T. TADA, TOSHIBA, JAPAN... 434 EFFECTS OF
DISSOLVED OXYGEN IN HF SOLUTION ON SILICON SURFACE MORPHOLOGY
H. OGAWA, K. ISHIKAWA, M.T. SUZUKI, Y. HAYAMI AND S. FUJIMURA, FUJITSU,
JAPAN 437
ROOM B
SYMPOSIUM M: APCT 94 EPITAXIAL GROWTH (14:00-15:50) 1-15
SYMPOSIUM 1-2: APCT 94 NOVEL PROCESSING TECHNOLOGIES (16:10-18:00) 16-30
ROOM C
C-L: QUANTUM PHENOMENA AND NOVEL DEVICES I (14:00-15:50)
14:00 (1) BLOCH OSCILLATIONS IN SEMICONDUCTOR SUPERLATTICES (INVITED)
H.G. ROSKOS, C. WASCHKE, K. VICTOR AND H. KURZ, TECHNISCHE HOCHSCHULE
AACHEN, F.R.G 440
XXIN
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14:30 (2) CURRENT OSCILLATION WITH AN INAS/ALSB RESONANT-TUNNELING DIODE
MEASURED AT 77K K. YOH, H. KAWAHARA* AND M. INOUE*, HOKKAIDO UNIV., AND
*OSAKA INST. TECH., JAPAN.. .443 14:50 (3) LARGE ELECTRON TRANSFER AND
STRONG NEGATIVE DIFFERENTIAL RESISTANCE IN STRAINED INGAAS CHANNEL
REAL-SPACE TRANSFER TRANSISTORS
J.-T. LAI AND J.Y.-M. LEE, NAT L TSING-HUA UNIV., TAIWAN, CHINA 447
15:10 (4) WITHDRAWN
15:30 (5) ELECTRON WAVE INTERFERENCE IN THE TERMINAL REGION OF
SPLIT-GATED QUANTUM WIRE Y. OCHIAI, K. YAMAMOTO, T. ONISHI*, M. KAWABE*,
K. ISHIBASHI**, J.P. BIRD**, Y. AOYAGI**, T. SUGANO** AND D.K. FERRY***,
CHIBA UNIV., *UNIV. TSUKUBA, **INST. OF PHYS. & CHEM. RES. AND
***ARIZONA STATE UNIV., JAPAN 451
C-2: QUANTUM PHENOMENA AND NOVEL DEVICES II (16:10-18:00)
16:10 (1) PRESENT STATUS AND FUTURE PROSPECTS OF QUANTUM-STRUCTURE
MATERIALS AND DEVICES (INVITED) H. SAKAKI, UNIV. TOKYO, JAPAN 455
16:40 (2) CHARACTERIZATION OF BALLISTIC TRANSPORT IN A
RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR USING PULSED HIGH MAGNETIC
FIELDS UP TO 42 T T. STRUTZ, T. TAKAMASU, N. MIURA, K. IMAMURA* AND L.
EAVES**, UNIV. TOKYO, *FUJITSU, JAPAN AND **UNIV. NOTTINGHAM, UK 457
17:00 (3) HOT ELECTRON BALLISTIC TRANSPORT IN N-ALGAAS/INGAAS/GAAS SMALL
FOUR-TERMINAL STRUC TURES
S. SASAKI, Y. HIRAYAMA AND S. TARUCHA, NTT, JAPAN 461
17:20 (4) ANALYSIS OF THE SWITCHING TIME OF MOBILES (MONOSTABLE-BISTABLE
TRANSITION LOGIC ELEMENTS) BASED ON SIMPLE MODEL CALCULATION K. MAEZAWA,
NTT, JAPAN 464
17:40 (5) OPEN-BASE MULTI-EMITTER HBTS WITH INCREASED LOGIC FUNCTIONS K.
IMAMURA, M. TAKATSU, T. MORI, S. MUTO AND N. YOKOYAMA, FUJITSU LABS.,
JAPAN.. .467
ROOM D
SYMPOSIUM III: SINGLE ELECTRON TUNNELING (14:00-17:50) 311-333
ROOM A
A-3: THIN FILM TRANSISTORS (9:10-10:30)
9:10 (1) IMPROVEMENT OF POLY-SI TFT CHARACTERISTICS BY HYDROGENATION AT
SI02/POLY-SI INTERFACES, CHARACTERIZED BY TDS MEASUREMENT OF DEUTERIUM
TERMINATED POLY-SI K. HAMADA, S. SAITO, K. SERA, F. OKUMURA, F. UESUGI
AND I. NISHIYAMA, NEC, JAPAN.. .470
9:30 (2) TRANSPORT PROPERTIES IN HIGH MOBILITY POLY-SI TFTS T. SERIKAWA,
S. SHIRAI, K. NAKAGAWA*, S. TAKAOKA*, K. OTO*, K. MURASE* AND S.
ISHIDA**, NTT, *OSAKA UNIV. AND **SCIENCE UNIV. OF TOKYO, JAPAN 473 9:50
(3) HIGH PERFORMANCE BOTTOM GATE TFTS BY EXCIMER LASER CRYSTALLIZATION
AND POSTHYDROGENATIOND.P. GOSAIN, J. WESTWATER AND S. USUI, SONY, JAPAN
476 10:10 (4) APPLICATION OF AS-DEPOSITED POLY-CRYSTALLINE SILICON FILMS
TO LOW TEMPERATURE CMOS THIN FILM TRANSISTORS M. MIYASAKA, T. KOMATSU,
A. SHIMODAIRA, I. YUDASAKA AND H. OHSHIMA, SEIKO EPSON, JAPAN 479 PA-1
SYMPOSIUM II: SOI TECHNOLOGY 295-309 PA-2 SYMPOSIUM III: SINGLE
ELECTRON TUNNELING 334-339 PA-3 SIGE AND POROUS SI(1) LOW TEMPERATURE
AND FACET-FREE EPITAXIAL SILICON GROWTH BY CONTAMINATION-RESTRAINED
LOAD-LOCK LPCVD SYSTEMXXIV
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M. NAKANO, H. KOTAKI, S. KAKIMOTO, K. MITSUHASHI AND J. TAKAGI, SHARP,
JAPAN 482 (2) LEED ANALYSIS ON INITIAL STAGES OF GE GROWTH ON SI(L 1
L)(LXL)-AS AND AS-DESORBED SI(L 11) (LXL) SURFACES
H. YASUDA, D. ABE, S. HASEGAWA, K. MAEHASHI AND H. NAKASHIMA, OSAKA
UNIV., JAPAN.. .485 (3) ROOM TEMPERATURE PHOTOLUMINESCENCE OF ER-DOPED
POROUS SILICON AT 1.54/MI T. KIMURA, A. YOKOI, H. HORIGUCHI, R. IKEDA,
R. SAITO AND A. SATO*, UNIV. ELECTRO-
COMM., AND *FUJIKURA, JAPAN 488
(4) STUDY OF HOLE THERMAL EMISSION FROM SIGE/SI QUANTUM WELL BY DEEP
LEVEL TRANSIENT SPEC TROSCOPY AND ADMITTANCE SPECTROSCOPY D. GONG, J.
JIANG, Q. WANG, F. LU, H. SUN, Y. FAN, X. ZHANG AND X. WANG, FUDAN
UNIV., CHINA 491
PA-4 SI DEVICES
(1) A NEW MODEL FOR THE LONG TERM CHARGE LOSS IN EPROMS A. SCHENK AND M.
HERRMANN, SWISS FEDERAL INST. TECHNOL., SWITZERLAND 494 (2) DEPENDENCE
OF HOT-CARRIER EFFECT ON INTERNAL STRESS IN TIN/POIY-SI GATE MOSFET T.
ISHII, M. MIYAMOTO AND K. SEKI, HITACHI, JAPAN 497
(3) ELECTRIC FIELD OPTIMISATION BY GRADED LOW-LEVEL DOPING IN AMORPHOUS
SILICON P-I-N DIODES
D. FISCHER AND A.V. SHAH, UNIV. NEUCHATEL, SWITZERLAND 500
(4) HOT CARRIERS IN MULTI-QUANTUM-WELL HETEROSTRUCTURES GE/GEI_XSIX V.I.
GAVRILENKO, I.N. KOZLOV, O.A. KUZNETSOV, M.D. MOLDAVSKAYA AND V.V.
NIKONOROV, RUSSIAN ACADEMY SCIENCES, RUSSIA 503
(5) IMPACT OF SOURCE-DRAIN EXTENSION DOSE ON HOT-CARRIER RELIABILITY IN
0.1/RNI NMOSFETS Y. TAKAO, K. WATANABE AND S. KAWAMURA, FUJITSU, JAPAN
506
(6) MOBILITY IMPROVEMENT BY COUNTER DOPING AND ITS REVERSE SHORT CHANNEL
EFFECT ASSOCIATED
CHANNEL-LENGTH-DEPENDENT DEGRADATION E.P.V. PLOEG, H. NODA, K. UMEDA, R.
NAGAI AND S. KIMURA, HITACHI, JAPAN 509 (7) ULTRA SHORT AND NARROW
CHANNEL SI MOSFETS WITH ADVANCED SEG ISOLATION FABRICATED BY ULTRA HIGH
VACUUM CVD
A. HORI, T. HIRAI AND M. TANAKA, MATSUSHITA, JAPAN 512
(8) TURN-OFF TRANSIENT ANALYSIS OF A DMOS DEVICE CONSIDERING
QUASI-SATURATION
CM. LIU AND J.B. KUO, NAT L TAIWAN UNIV., TAIWAN, CHINA 515
(9) NEW SCALING SCENARIO FOR CHANNEL HOT ELECTRON TYPE FLASH EEPROM S.
UENO, H. ODA, N. AJIKA, M. INUISHI AND N. TSUBOUCHI, MITSUBISHI, JAPAN
518 (10) SUPPRESSION OF LEAKAGE CURRENT IN POLYSILICON NMOS THIN FILM
TRANSISTORS USING NH3
ANNEALING D.-S. CHOI, G.-Y. YANG, C.-H. HAN AND C.-K. KIM, KAIST, KOREA
521
(11) SUCCESSFUL HYDROGENATION USING FURNACE-ANNEALING FOR HIGH QUALITY
POLY-SI TFTS
M. OKAMURA, S. SHIRAI AND T. SERIKAWA, NTT, JAPAN 524
(12) VERY LOW TEMPERATURE DEPOSITION OF MICRO/POLYCRYSTALLINE SI FILMS
MADE BY HYDROGEN
DILUTION WITH PE-CVD AND ECR-CVD
K.C. WANG, Y.L. JIANG*, T.R. YEW AND H.L. HWANG, NAT L TSING HUA UNIV.,
AND *NAT L CHUNG HSING UNIV., TAIWAN 527
(13) 20% REDUCTION BOTH OF CELL AREA AND OF MASK LAYERS IN SIMPLIFIED
TFT-SRAM PROCESS
A. KAWAMURA, T. TATEYAMA, K. NAKAMURA, T. WADA, H. OHKI, A. ISHIHAMA, K.
IGUCHI AND K. SAKIYAMA, SHARP, JAPAN 529
(14) COMPUTER SIMULATION AND MEASUREMENT OF CAPACITANCE VOLTAGE
CHARACTERISTICS FROM QUAN
TUM WIRE DEVICES OF TRENCH-OXIDE MOS STRUCTURE T. TSUKUI AND S. ODA,
TOKYO INST. TECH., JAPAN 532
(15) DC PERFORMANCE OF A TUNNEL MIS EMITTER AUGER TRANSISTOR
I.V. GREKHOV, A.F. SHULEKIN AND M.I. VEXLER, A.F. IOFFE PHYS.-TECH.
INST., RUSSIA 535
A-4: SI QUANTUM DEVICES (14:00-15:40)
14:00 (1) QUANTIZED CONDUCTANCE OF A SILICON WIRE FABRICATED USING SIMOX
TECHNOLOGY Y. NAKAJIMA, Y. TAKAHASHI, S. HORIGUCHI, K. IWADATE, H.
NAMATSU, K. KURIHARA AND M. TABE, NTT, JAPAN 538
XXV
IMAGE 13
14:20 (2) QUASI-ONE DIMENSIONAL CONDUCTION IN POLYCRYSTALLINE SILICON
NANO WIRE Y. WADA, M. SUGA, T. KURE, Y. SUDOU, T. YOSHIMURA, T.
KOBAYASHI, Y. GOTOU AND S. KONDO, HITACHI, JAPAN 541
14:40 (3) ORIGIN OF CHAOS IN THYRISTORS T. LRITA, T. TSUJITA, M.
FUJISHIMA AND K. HOH, UNIV. TOKYO, JAPAN 544
15:00 (4) FABRICATION OF SUPERCONDUCTING NBN GATE MOSFET FOR HYBRID
CIRCUIT APPLICATIONS N. SUZUKI, K. YAMAMOTO, S. MATSUMOTO, I. KUROSAWA*,
M. AOYAGI* AND S. TAKADA*, KEIO UNIV., AND *ETL, JAPAN 547
15:20 (5) LOW TEMPERATURE IMPURITY DIFFUSION IN 6H-SIC PLANAR
QUANTUM-WELL P-N JUNCTIONS AND N-P-N TRANSISTOR STRUCTURES N.T. BAGRAEV,
L.E. KLYACHKIN AND V.L. SUKHANOV, RUSSIAN ACADEMY SCIENCES, RUSSIA..
.550
A-5: OXIDE RELIABILITY I (16:00-17:40)
16:00 (1) LOCAL DIELECTRIC BREAKDOWN OF THIN SILICON OXIDE BY DENSE
CONTACT ELECTRIFICATION Y. FUKANO, T. UCHIHASHI, T. OKUSAKO, Y.
SUGAWARA, Y. YAMANISHI*, T. OASA* AND S. MORITA, HIROSHIMA UNIV., AND
*SUMITOMO METAL IND., JAPAN 553
16:20 (2) STUDY ON THE FUNDAMENTAL ELECTRICAL PROPERTIES OF ULTRA-THIN
OXIDES GROWN BY LOW
TEMPERATURE MICROWAVE PLASMA AFTERGLOW OXIDATION P.C. CHEN, K.Y.J. HSU,
J.Y. LIN* AND H.L. HWANG, NAT L TSING HUA UNIV., AND *CHUNG CHENG INST.
TECH., TAIWAN, CHINA 556
16:40 (3) A CONSISTENT MODEL FOR POLARITY DEPENDENCE OF THRESHOLD
VOLTAGE SHIFT IN FOWLER-NORDHEIM STRESSED CMOS TRANSISTORS T. BROZEK AND
C.R. VISWANATHAN, UNIV. CALIFORNIA, U.S.A 559
17:00 (4) COMMON ORIGIN OF STRESS-INDUCED LEAKAGE CURRENT AND ELECTRON
TRAP GENERATION H. SATAKE AND A. TORIUMI, TOSHIBA, JAPAN 562
17:20 (5) NEW EXPERIMENTAL FINDINGS ON STRESS INDUCED LEAKAGE CURRENT OF
ULTRA THIN SILICON DIOXIDES
K. OKADA, S. KAWASAKI AND Y. HIROFUJI, MATSUSHITA, JAPAN 565
ROOM B
SYMPOSIUM 1-3: APCT 94 SCANNING PROBE TECHNOLOGY I (9:10-10:40) 31-42
SYMPOSIUM 1-4: APCT 94 SCANNING PROBE TECHNOLOGY II (11:00-12:30) 43-54
SYMPOSIUM 1-5: APCT 94 NANOSTRUCTURES I (14:00-15:40) 55-65
SYMPOSIUM 1-6: APCT 94 NANOSTRUCTURES II (16:00-17:50) 66-80
ROOM C
C-3: GROWTH (9:10-10:40)
9:10 (1) IN SITU MASS SPECTROMETRIC ANALYSIS OF SURFACE CHEMISTRY IN
MOMBE GROWTH (INVITED) M. SASAKI AND S. YOSHIDA, OTL, JAPAN 568
9:40 (2) MOLECULAR MORPHOLOGY AND ELECTRICAL CONDUCTION OF EVAPORATED
VANADYL PHTHALOCYANINE THIN FILMS
K. KOJIMA, T. KOJIMA, A. MAEDA, S. OCHIAI, Y. UCHIDA, A. OHASHI AND M.
IEDA, AICHI IN ST. TECH., JAPAN 571
10:00 (3) INITIAL STAGES OF CU SURFACTANT GROWTH ON SB-ADSORBED DIAMOND
SURFACES M. OSHIMA, A. MENZ, S. HEUN, Y. WATANABE, F. MAEDA, R.
KLAUSER*, T.J. CHUANG**, H. KAWARADA***, AND H. KATO****, NTT, JAPAN,
*SRRC, **IAMS, TAIWAN, CHINA, ***WASEDA UNIV. AND ****KEK, JAPAN 574
10:20 (4) SURFACE MODIFICATION AND DOPING EFFECTS OF SB ON THE GROWTH OF
CUINSE2 FILMS BY MOLECULAR BEAM DEPOSITION B.-H. TSENG AND G.-W. CHANG,
NAT L SUN YAT-SEN UNIV., TAIWAN, CHINA 577
C-4: SUPERCONDUCTING DEVICES AND MATERIALS (11:00-12:30)
11:00 (1) SUPERCONDUCTING THREE TERMINAL DEVICES USING AN INAS-BASED
TWO-DIMENSIONAL ELECTRON GAS (INVITED) H. TAKAYANAGI, T. AKAZAKI, J.
NITTA AND T. ENOKI, NTT, JAPAN 580
XXVI
IMAGE 14
11:30 (2) FABRICATION PROCESS AND CALCULATED CHARACTERISTICS OF
LN/(BA,RB)BI03/SR(TI, NB)03 NORMAL CONDUCTOR AND SUPERCONDUCTOR BASE
TRANSISTORS T. YAMADA, R. KAWASAKI AND H. ABE, OKI, JAPAN 583
11:50 (3) ANOMALOUS BEHAVIOR OF RESISTIVITY AND MOBILITY OF LA2_XSRXCU04
BULK MATERIAL AND FILM H. GAO, K. UNO, H. KANEDA, Y. YOSHIKAWA AND M.
SUGAHARA, YOKOHAMA NAT L UNIV., JAPAN 586
12:10 (4) WATER-IMMERSION-INDUCED SURFACE REACTIONS IN EUBA2CU3OY THIN
FILMS T. KIYOKURA, F. MAEDA, Y. WATANABE, M. OSHIMA, H. ASANO AND M.
SUZUKI, NTT, JAPAN 589
C-5: DEVICES AND PROCESSING I (14:00-15:50)
14:00 (1) A MANUFACTURABLE HIGH-SPEED LOW-POWER COMPLEMENTARY GAAS
PROCESS (INVITED) J.K. ABROKWAH, J. HUANG, W.J. OOMS, C. SHURBOFF, J.A.
HALLMARK, R. LUCERO, J. GILBERT, B. BERNHARDT AND G.L. HANSELL,
MOTOROLA, U.S.A 592
14:30 (2) A NEW PLANAR TMT SUITABLE FOR L-BAND MMICS WITH RF
TRANSMISSION AND RECEPTION BLOCKS OPERATING AT VDD ^ 2 V M. SAWADA, E.
FUJII, S. MATSUSHITA, S. TERADA, D. INOUE, H. NAKAMOTO AND Y. HARADA,
SANYO, JAPAN 595
14:50 (3) A BURIED-CHANNEL WNX/W SELF-ALIGNED GAAS MESFET PROCESS WITH
SELECTIVELY-IMPLANTED CHANNEL AND UNDOPED EPITAXIAL SURFACE LAYERS FOR
MMIC APPLICATIONS K. NISHIHORI, Y. KITAURA, M. NAGAOKA, Y. TANABE, M.
MIHARA, M. YOSHIMURA, M. HIROSE AND N. UCHITOMI, TOSHIBA, JAPAN 598
15:10 (4) SCHOTTKY BARRIER HEIGHTS OF INXAL,_XAS(0 X 0.35)EPILAYERS ON
GAAS J.-I. CHYI, R.-J. LIN, R.-M. LIN, J.-L. SHIEH AND J.-W. PAN, NAT L
CENTRAL UNIV., TAIWAN, CHINA 601
15:30 (5) SCHOTTKY CONTACTS ON N-INP WITH HIGH BARRIER HEIGHTS AND
REDUCED FERMI-LEVEL PINNING BY A NOVEL ELECTROCHEMICAL PROCESS
N.-J. WU, T. HASHIZUME, H. HASEGAWA AND Y. AMEMIYA, HOKKAIDO UNIV.,
JAPAN 604
C-6: DEVICES AND PROCESSING II (16:10-17:50)
16:10 (1) EFFECTS OF A COMPOSITIONALLY GRADED INXGAJ_XAS BASE IN
ABRUPT-EMITTER INP/INGAAS HBTS K. KURISHIMA, H. NAKAJIMA, S. YAMAHATA,
T. KOBAYASHI AND Y. MATSUOKA, NTT, JAPAN... 607 16:30 (2) ALGAAS/GAAS
HBT FABRICATED USING SELECTIVE MOCVD
J.-H. SON, C.-T. KIM, S.-C. HONG AND Y.-S. KWON, KAIST, KOREA 610
16:50 (3) HIGHLY REPRODUCIBLE FABRICATION PROCESS FOR PASSIVATED
ALGAAS/GAAS HBT S WITH PT/TI/PT/AU BASE ELECTRODES S. HONGO, T.
SUGIYAMA, Y. KURIYAMA, N. IIZUKA AND M. OBARA, TOSHIBA, JAPAN 613
17:10 (4) ELECTROLUMINESCENCE OF ELECTRONS BALLISTICALLY INJECTED AND
EMITTING PHONONS IN THE P-TYPE BASE OF ALGAAS/GAAS HETEROJUNCTION
BIPOLAR TRANSISTOR STRUCTURES Y.K. FUKAI, T. FURUTA AND T. ISHIBASHI,
NTT, JAPAN 616
17:30 (5) EFFECTS OF SULFIDE PASSIVATION ON THE PERFORMANCE OF GAAS
MISFETS WITH PHOTO-CVD GROWN P3N5 GATE INSULATORS Y.H. JEONG, K.H. CHOI,
S.K. JO AND B.K. KANG, POSTECH, KOREA 619
ROOM D
D-L: SILICIDE TECHNOLOGY (9:10-10:30)
9:10 (1) LOW-RESISTANCE TISI2 FORMATION BY CONTROLLING SI SURFACE
CONDITION FOR DEEP-SUB-MICRON CMOS H. WAKABAYASHI, T. MATSUKI, Y. SAITO,
T. MOGAMI AND T. KUNIO, NEC, JAPAN 622
9:30 (2) LOW-TEMPERATURE (400C) W-SILICIDE FORMATION BY HIGH-ENERGY
XEX-ION BEAM IRRADIA TION
T. YAMAGUCHI, J. NAKATA AND K. MURASE, NTT, JAPAN 625
9:50 (3) NOVEL OXYGEN FREE TITANIUM SILICIDATION (OFS) PROCESSING FOR
LOW RESISTANCE AND THERMAL LY STABLE SALICIDE IN DEEP SUBMICRON DUAL
GATE CMOS
H. KOTAKI,- M. NAKANO, S. HAYASHIDA, Y. TAKEGAWA, T. MATSUOKA, Y. MORI,
S. KAKIMOTO, K. MITSUHASHI AND J. TAKAGI, SHARP, JAPAN 628
XXVN
IMAGE 15
10:10 (4) CURRENT DRIVE SILICIDATION TECHNOLOGY FOR HIGH SPEED FIELD
PROGRAMMABLE DEVICES H. SUZUKI, G.S. JONG, M. HIRAYAMA AND T. OHMI,
TOHOKU UNIV., JAPAN 631
PD-1 INTERCONNECTION
(1) SELECTIVE ALUMINUM CHEMICAL VAPOR DEPOSITION USING DMEAA S.C. SUN,
M.H. TSAI, H.T. CHIU AND S.Y. YANG, CHIAO TUNG UNIV., TAIWAN, CHINA
....634 (2) RESISTANCE ANOMALY OF AL/CVD-W INTERCONNECTS IN DEEP
SUB-MICRON WIDTH
M. SEKIGUCHI, T. FUJII, M. YAMANAKA AND M. FUKUMOTO, MATSUSHITA, JAPAN
637 (3) TIN/TISI2 FORMATION USING TINX LAYER AND ITS FEASIBILITIES IN
ULSI
J.S. BYUN, C.R. KIM, K.G. RHA, J.J. KIM AND W.S. KIM, GOLDSTAR, KOREA
640 (4) LOW ENERGY BIAS SPUTTERING FILLING OF SI02 INTO HIGH ASPECT
RATIO TRENCH EMPLOYING AXIALLY CONFINED HELICON WAVE PLASMA
G. SADAKUNI*, Y. KOBAYASHI, H. SHINDO**, T. FUKAZAWA*, H. SAKAUE*, S.
SHINGUBARA* AND Y. HORIIKE, TOYO UNIV., *HIROSHIMA UNIV., AND **FUKUYAMA
UNIV., JAPAN 643 (5) AL-REFLOW PROCESS WITH A CAP-CLAMP FOR SUB-MICRON
CONTACT HOLES
G.H. CHOI, C.S. PARK, I.S. PARK, S.I. LEE, S.T. AHN, Y.K. KIM* AND R.
REYNOLDS*, SAMSUNG, KOREA, AND *VARIAN ASSOCIATES, U.S.A 646
PD-2 DIELECTRIC THIN FILMS
(1) ULTRA-LOW-TEMPERATURE GROWTH OF HIGH-INTEGRITY THIN GATE OXIDE FILMS
BY LOW-ENERGY
ION-ASSISTED OXIDATION
J. WATANABE, Y. KAWAI, N. KONISHI AND T. OHMI, TOHOKU UNIV., JAPAN 649
(2) STUDY OF SINGLE LAYER THERMAL OXIDE AS INTER-POLY DIELECTRIC FOR
NEXT GENERATION FLASH
MEMORY N. SHINMURA, S. SATO, K. HAKOZAKI, K. AZUMA, K. IGUCHI AND K.
SAKIYAMA, SHARP, JAPAN 652
(3) A NOVEL APPROACH FORLEAKAGE CURRENT REDUCTION OF LPCVD TA205 FILMS
BY RAPID THER
MAL N20 ANNEALING S.C. SUN AND T.F. CHEN, CHIAO TUNG UNIV., TAIWAN,
CHINA 655
PD-3 SURFACE ENGINEERING OF SI
(1) INITIAL STAGE OF OXIDATION OF HYDROGEN-TERMINATED SI(100)-2 X 1
SURFACE
T. AIBA, K. YAMAUCHI, Y. SHIMIZU, N. TATE*, M. KATAYAMA* AND T. HATTORI,
MUSASHI IN
ST. TECH., AND *SHIN-ETSU HANDOTAI, JAPAN 658
(2) MO CONTAMINATION IN P/P+ EPITAXIAL SILICON WAFERS
M. AOKI, T. ITAKURA AND N. SASAKI, FUJITSU LABS., JAPAN 661
(3) OXYGEN AND FLUORINE TREATMENT EFFECT ON SILICON SURFACE
CHARACTERIZED BY HIGH-SENSITIVITY
INFRARED REFLECTION SPECTROSCOPY M. OKUYAMA, M. NISHIDA AND Y. HAMAKAWA,
OSAKA UNIV., JAPAN 664
(4) NATIVE OXIDE GROWTH RATE OF SI SURFACE WITH VARIOUS FLATNESS
T. ITOGA, A. HIRAOKA, F. YANO, J. YUGAMI AND M. OHKURA, HITACHI, JAPAN
667 (5) NOVEL DRY CLEANING USING AHF-ALCOHOL WITH THE NEW HOT CLUSTER
TOOL
F. MIENO, K. SUZUKI, A. SHIMIZU, A. TSUKUNE, S. SUGAWA, S. KUDOH, M.
NAGASE AND M. KAWANO, FUJITSU, JAPAN 670
(6) DIFFERENT HYDROGEN PASSIVATION EFFECTS ON LOW-TEMPERATURE AND
HIGH-TEMPERATURE PRO
CESSED POLY-SI TFT S Y.S. KIM, K.Y. CHOI, S.K. LEE, Y.H. KIM* AND M.K.
HAN, SEOUL NAT L UNIV., AND *SUWON UNIV., KOREA 673 *C
PD-4 FABRICATION
(1) HIGH RATE SELECTIVE ETCHING OF A-SI:H AND MODIFICATION EFFECT OF
A-SINX:H SURFACE BY
HYDROGEN RADICAL H. NAGAYOSHI, M. YAMAGUCHI, M. IKEDA, Y. YAMAMOTO, K.
KAMISAKO AND Y. TARUI*, TOKYO UNIV. AGRI. TECH., AND *WASEDA UNIV.,
JAPAN 676
(2) SELF-ALIGN-CONTACT ETCHING WITH INDUCTIVE COUPLED PLASMA M. SATO, T.
TOHDA, H. KAWANO, D. TAKEHARA, N. TAKENAKA, A. ISHIHAMA AND K. SAKIYAMA,
SHARP, JAPAN 679
XXVIII
IMAGE 16
(3) CONTROLLING CRYSTALLINE ORIENTATIONS OF SOL-GEL PZTS FOR FRAM AND
DRAM APPLICATIONS K. AOKI, Y. FUKUDA, K. NUMATA AND A. NISHIMURA, TEXAS
INSTRUMENTS JAPAN, JAPAN ... 682 (4) SUPPRESSION OF BORON PENETRATION IN
PMOS BY USING OXIDE GETTERING EFFECT IN POLY-SI GATE Y.H. LIN, T.S.
CHAO*, C.L. LEE AND T.F. LEI, NAT L CHIAO TUNG UNIV., AND *NAT L NANO
DEVICE LAB., TAIWAN, CHINA 685
(5) A NOVEL LOCOS SPI (SELF-ALIGNED-POCKET-IMPLANTATION) TECHNOLOGY FOR
A HALF MICRON NMOSFET C.J. KIM, H.W. JANG, Y.S. JANG, J.H. JIN, S.K. LIM
AND K.H. CHOI, SAMSUNG, KOREA... 688 (6) ABRUPT AND ARBITRARY PROFILE
FORMATION IN SILICON USING A LOW-KINETIC-ENERGY ION BOM
BARDMENT PROCESS W. SHINDO, M. HIRAYAMA AND T. OHMI, TOHOKU UNIV., JAPAN
691
(7) QUANTUM-WELL SILICON P-N JUNCTIONS AND N-P-N TRANSISTOR STRUCTURES
N.T. BAGRAEV, E.I. CHAIKINA, L.E. KLYACHKIN, A.M. MALYARENKO AND V.L.
SUKHANOV, RUSSIAN ACADEMY SCIENCES, RUSSIA 694
(8) ADVANCED LANGMUIR PROBES FOR RF DISCHARGE PLASMAS
M. HIRAYAMA AND T. OHMI, TOHOKU UNIV., JAPAN 697
(9) CONTACTLESS MEASUREMENT OF SURFACE TEMPERATURE AND SURFACE POTENTIAL
OF SEMICONDUCTOR
BY PHOTOREFLECTANCE SPECTROSCOPY A. FUJIMOTO, H. KATSUMI*, M. OKUYAMA*
AND Y. HAMAKAWA*, WAKAYAMA NAT L COLL. TECHNOL., AND *OSAKA UNIV., JAPAN
700
(10) LOW TEMPERATURE CVD OF HIGH QUALITY SI02 FILM USING HELICON PLASMA
SOURCE
Y. NISHIMOTO, N. TOKUMASU AND K. MAEDA, SEMICONDUCTOR PROCESS LAB.,
JAPAN 703
SYMPOSIUM IV: NEURODEVICES AND NEUROCHIPS (13:50-18:10) 341-369
ROOM A
A-6: FABRICATION PROCESS I (9:10-10:40)
9:10 (1) MICROMACHINED SILICON-BASEDANALYTICAL MICROINSTRUMENTS FOR
SPACE SCIENCE AND PLANETARY EXPLORATION (INVITED) F.J. GRUNTHANER, R.E.
STALDER, S. BOUMSELLEK, T.R. VAN ZANDT, T.W. KENNY, M.H. HECHT, A.
KSENDZOV, M.L. HOMER, R.W. TERHUNE, A.L. LANE, M.A. BUTLER* AND
A.J. RICCO*. JPL/CALTECH AND *SANDIA NAT L LABS., U.S.A 706
9:40 (2) THE IMPACT OF NITROGEN IMPLANTATION INTO HIGHLY DOPED
POLYSILICON GATES FOR HIGHLY RELIABLE AND HIGH PERFORMANCE SUB-QUARTER
MICRON DUAL GATE CMOS
M. KOBAYASHI, T. KUROI, M. SHIRAHATA, Y. OKUMURA, S. KUSUNOKI, M.
INUISHI AND N. TSUBOUCHI, MITSUBISHI, JAPAN 709
10:00 (3) IMPROVED PATTERN PROFILE BASED ON ANALYZING BETWEEN SUBSTRATE
SURFACE AND CHEMICALLY
AMPLIFIED RESIST S. MORI, K. ADACHI, T. SUGIHARA, T. FUKUSHIMA AND J.
TAKAGI, SHARP, JAPAN 712
10:20 (4) STUDY OF INITIAL GROWTH MECHANISM IN TEOS-03 SI02 USING
ATR-FTIR T. YOSHIE, T. USAMI, K. SHIMOKAWA AND K. YOSHIMARU, OKI, JAPAN
715
A-7: FABRICATION PROCESS II (11:00-12:30)
11:00 (1) PULSE-TIME MODULATED ELECTRON CYCLOTRON RESONANCE PLASMA
DISCHARGE FOR PRECISE ULSI
PATTERNING (INVITED) S. SAMUKAWA, NEC, JAPAN 718
11:30 (2) HIGH TEMPERATURE ETCHING OF PZT/PT/TIN STRUCTURE BY HIGH
DENSITY ECR PLASMA S. YOKOYAMA, Y. ITO, K. ISHIHARA, K. HAMADA, S.
OHNISHI, J. KUDO AND K. SAKIYAMA,
SHARP, JAPAN
721
11:50 (3) REAL TIME MONITORING OF SURFACE REACTIONS DURING PLASMA
ENHANCED CVD OF SILICON
S. MIYAZAKI, H. SHIN, Y. MIYOSHI AND M. HIROSE, HIROSHIMA UNIV., JAPAN
724
12:10 (4) STABILITY AND MOBILITY OF SURFACE PRECURSORS FOR REACTION
GASES IN W-CVD R. IRIE, N. KOBAYASHI, J. USHIO, Y. TAKEMURA AND T.
MARUIZUMI, HITACHI, JAPAN 727
XXIX
IMAGE 17
A-8: DOPING (14:00-15:40)
14:00 (1) CHARACTERIZATION OF THE POROUS BORON O-DOPED SI SUPERLATTICE
T.-C. CHANG, M.-Y. HSU, C.-Y. CHANG, C.-P. LEE, T.-G. JUNG, W.-C. TSAI,
G.-W. HUANG AND Y.J. MEI, NAT L CHIAO TUNG UNIV., TAIWAN, CHINA 730
14:20 (2) ULTRA-SHALLOW AND ABRUPT BORON PROFILES IN SI BY THE RI-DOPING
TECHNIQUE H. KUJIRAI, E. MURAKAMI AND S. KIMURA, HITACHI, JAPAN 733
14:40 (3) ENHANCED CONDUCTIVITY AND RETARDED BORON DIFFUSION IN THE AS
PREAMORPHIZED P+POLY-SI GATE
S.J. KWON, Y.H. KIM* AND J.D. LEE**, KYUNGWON UNIV., *ETRI, AND **SEOUL
NAT.
UNIV., KOREA 736
15:00 (4) DIRECT OBSERVATION OF VACANCY SUPERSATURATION IN RETARDED
DIFFUSION OF BORON IN SILICON PROBED BY MONOENERGETIC POSITRON BEAM K.
OSADA, Y. ZAITSU, S. MATSUMOTO, S. TANIGAWA*, A. UEDONO*, M. YOSHIDA***
E. ARAI** AND T. ABE****, KEIO UNIV., *TSUKUBA UNIV., **NTT, ***KYUSHU
INST, OF
DESIGN AND ****SHIN-ETSU HANDOTAI, JAPAN 739
15:20 (5) REDUCING THE REVERSE-BIAS CURRENT IN 450C-ANNEALED N P
JUNCTION BY HYDROGEN RADICAL
SINTERING
M.M. OKA, A. NAKADA, K. TOMITA, T. SHIBATA, T. OHMI AND T. NITTA*,
TOHOKU UNIV., AND *HITACHI, JAPAN 742
A-9: SIGE AND POROUS SI (16:00-17:40)
16:00 (1) PHOTOLUMINESCENCE OF SIGE QUANTUM WELLS GROWN ON SIMOX BY GAS
SOURCE MBE D.K. NAYAK, N. USAMI, S. FUKATSU AND Y. SHIRAKI, UNIV. TOKYO,
JAPAN 745
16:20 (2) PHOTOLUMINESCENCE FROM SILICON QUANTUM WELL FORMED ON SIMOX
SUBSTRATE Y. TAKAHASHI, T. FURUTA, T. ISHIYAMA AND M. TABE, NTT, JAPAN
748
16:40 (3) RELATION BETWEEN PHOTOCONDUCTION EFFECTS AND LUMINESCENT
PROPERTIES OF POROUS SILICON T. OZAKI, T. OGURO, H. KOYAMA AND N.
KOSHIDA, TOKYO UNIV. AGRI. TECH., JAPAN 751 17:00 (4) INTERFACE-MIXING
IN GE HETEROEPITAXY ON SI(001):MICROSCOPIC MECHANISM H. OYANAGI, K.
SAKAMOTO, R. SHIODA AND T. SAKAMOTO, ETL, JAPAN 754
17:20 (5) INITIAL GROWTH STAGES OF SI ON GE AND GE ON SI FOR
ATOMIC-LAYER EPITAXY CONTROL USING SIH4 AND GEH4 GASES M. SAKURABA, J.
MUROTA, T. WATANABE AND Y. SAWADA, TOHOKU UNIV., JAPAN 757
ROOM B
SYMPOSIUM 1-7: APCT 94 VISIBLE LIGHT SOURCE (9:10-10:40) 81-92
PB-1 SYMPOSIUM I: APCT 94 EPITAXIAL GROWTH 148-180
PB-2 SYMPOSIUM I: APCT 94 FABRICATION AND CHARACTERIZATION
TECHNOLOGIES 181-213 PB-3 SYMPOSIUM I: APCT 94 OPTICAL PHENOMENA
214-225
PB-4 SYMPOSIUM I: APCT 94 OPTICAL DEVICES 226-252
B-L: SI POWER DEVICES AND SENSORS (14:00-15:40)
14:00 (1) INJECTION EFFICIENCY ENHANCEMENT IN DYNAMIC TRENCH GATE
EMITTER (DTGE) FOR 4500 V MOS GATE TRANSISTOR (IEGT) M. KITAGAWA, A.
NAKAGAWA AND I. OMURA, TOSHIBA, JAPAN 760
14:20 (2) CONCAVE-DMOSFET: A NEW SUPER LOW ON-RESISTANCE POWER MOSFET N.
TOKURA, T. YAMAMOTO, M. KATAOKA, S. TAKAHASHI AND K. HARA, NIPPONDENSO,
JAPAN 763
14:40 (3) A LOW LOSS SCHOTTKY RECTIFIER UTILIZING THE TRENCHED SIDE WALL
AS JUNCTION BARRIER CON TROLLED SCHOTTKY CONTACT H.-S. KIM, S.-D. KIM,
Y.-I. CHOI* AND M.-K. HAN, SEOUL NAT L UNIV. AND *AIOU UNIV., KOREA 766
15:00 (4) SEPARATED DRIFT FIELD MAGNETOTRANSISTOR WITH THE P+ RING
AROUND THE EMITTER U.-S. KANG, S.-K. LEE* AND M.-K. HAN, SEOUL NAT L
UNIV., AND *DANKOOK UNIV., KOREA... 769
XXX
IMAGE 18
15:20 (5) STUDIES ON THE PROCESS AND CHARACTERISTICS OF 8 X 4CM2 SILICON
MICROSTRIP SENSORS W.-C. TSAY, J.-W. HONG, A. CHEN, W.T. LIN, H.-J.
TING*, S.-T. CHIANG*, E. CHUANG** AND S.-W. HWANG**, NAT L CENTRAL
UNIV., *ELEC. RES. & SERVICE ORGANIZATION AND **EPISIL TECHNOL., TAIWAN,
CHINA 772
SYMPOSIUM 1-8: APCT 94 BEAM-INDUCED PROCESS (16:00-17:50) 93-107
ROOM C
C-7: HIGH DIELECTRIC CONSTANT THIN FILMS (9:10-10:30)
9:10 (1) FORMATION AND CHARACTERIZATION OF EPITAXIAL RUTILE THIN FILMS
ON SI SUBSTRATE M.B. LEE, M. KAWASAKI, M. YOSHIMOTO, H. KOINUMA, B.K.
MOON AND H. ISHIWARA, TOKYO INST. TECH., JAPAN 775
9:30 (2) WITHDRAWN
9:50 (3) CHARGE STORAGE BY CONTACT ELECTRIFICATION ON THIN SRTI03 FILM
T. UCHIHASHI, T. OKUSAKO, T. TSUYUGUCHI, Y. SUGAWARA, M. IGARASHI*, R.
KANEKO* AND S. MORITA, HIROSHIMA UNIV., AND *NTT, JAPAN 778
10:10 (4) THE CHARACTERIZATION OF DEFECT STATES RESPONSIBLE FOR LEAKAGE
CURRENT IN TANTALUM PENTOXIDE FILMS FOR VERY HIGH DENSITY DRAM
APPLICATIONS W.S. LAU, T.S. TAN, N.P. SANDLER* AND B.S. PAGE*, NAT L
UNIV. SINGAPORE, SINGAPORE, AND *LAM RES. CORP., U.S.A 781
PC-1 ELECTRON AND QUANTUM DEVICES
(1) STUDY OF AN EPITAXIAL FERROELECTRIC / SEMICONDUCTOR / INSULATOR
STRUCTURE USING PEROVSKITE
OXIDES FOR APPLICATION TO THE FIELD EFFECT TRANSISTOR Y. WATANABE,
MITSUBISHI KASEI, JAPAN 784
(2) INAS FIELD-EFFECT TRANSISTORS WITH PLATINUM SCHOTTKY GATE
K. YOH, H. TAKEUCHI, S. IZUMIYA* AND M. INOUE*, HOKKAIDO UNIV., AND
*OSAKA INST.
TECH., JAPAN 787
(3) INGAP/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS (HBTS) WITH A
ULTRA-HIGH CARBON-DOPED
BASE(P=1.5XL02LCM-3) J. SHIRAKASHI, T. AZUMA, F. FUKUCHI, M. KONAGAI AND
K. TAKAHASHI, TOKYO INST. TECH.,
JAPAN 790
(4) NUMERICAL SIMULATION ON THE DEVICE STRUCTURE OF GAAS FLOATED
ELECTRON CHANNEL FIELD
EFFECT TRANSISTOR (FECFET)
Y.-J. LEE, C.-T. KIM*, S.-C. HONG**, Y.-S. KWON**, H.-K. YOON AND K.-H.
OH, HYUN DAI ELECTRONICS IND., *GOLDSTAR AND **KAIST, KOREA 793
(5) A NEW NEGATIVE-DIFFERENTIAL-RESISTANCE RESONANT-TUNNELING SWITCH
WITH DELTA-DOPED
QUANTUM-WELL STRUCTURE W.-C. LIU, D.-F. GUO*, AND L.-W. LAIH, NAT L
CHENGKUNG UNIV. AND *PRIVATEKUNG-SAN INST. TECH. & COMMERCE, TAIWAN,
CHINA 796
(6) ELASTIC SCATTERING AND DEPLETION EFFECTS ON CURRENT-VOLTAGE
CHARACTERISTICS OF GATED RESO
NANT TUNNELING DIODES C. LEE, HYUNDAI SEMICONDUCTOR, KOREA
799
(7) ELECTRON TRANSPORT MODELING OF ELECTRON WAVEGUIDES IN NONLINEAR
TRANSPORT REGIME
H. TSUCHIYA AND T. MIYOSHI, KOBE UNIV., JAPAN 802
(8) EMITTER SIZE EFFECTS IN THE COUPLED-QUANTUM-WELL BASE RESONANT
TUNNELING TRANSISTOR H. TANIYAMA, M. TOMIZAWA AND A. YOSHII, NTT, JAPAN
805
(9) THE STUDY OF THE DISTRIBUTION FUNCTION OF ELECTRONS BY ENSEMBLE
MONTE-CARLO SIMULATION
OF THE HETEROJUNCTION BIPOLAR TRANSISTOR IN LARGE CURRENT MODE S.M.
KORSHUNOV, A.A. KULEMIN AND V.E. SOROKOUMOV, MOSCOW INST. PHYS. &
TECHNOL., RUSSIA 809
XXXI
IMAGE 19
PC-2 GROWTH AND PROCESSING
(1) HYDROGENATION EFFECTS IN HG,_XCDXTE LAYERS GROWN ON P-CDTE(211)B
SUBSTRATES BY MOLECULAR BEAM EPITAXY M.D. KIM, M.S. HAN, T.W. KANG, J.M.
KIM*, H.K. KIM*, Y.T. JEOUNG*, T.W. KIM** AND J.B. CHOI***, DONGGUK
UNIV., *AGENCY DEFENCE DEVELOPMENT, **KWANGWOON UNIV.
AND ***CHUNGBUK NAT L UNIV., KOREA GJJ
(2) ION-BEAM SPUTTER ETCHING AND DEPOSITION WITH CARBONDIOXIDE
B. KEMPF, H.W. DINGES AND H. BURKHARD, DEUTSCHE BUNDESPOST TELEKOM,
F.R.G 815 (3) SULFUR-TREATMENT AND HYDROGENATION EFFECTS IN GAAS Y.T.
OH, C.G. CHUNG, G.S. EOM, T.W. KANG, C.Y. HONG, S.B. PARK* AND T.W.
KIM**,
DONGGUK UNIV., *TAEGU UNIV. AND **KWANGWUN UNIV., KOREA §17
(4) PHOTO-ACOUSTIC SENSITIVITY OF HEMATITE SINGLE CRYSTALS
V. PREOBRAZHENSKY AND A. KISELEV, MOSCOW INST. RADIO ENG., RUSSIA 820
(5) EFFECT OF MAGNETOELASTIC INTERACTION ON MAGNETOSTATIC MODE SPECTRUM
IN THICK FERRITE FILMS WITH NONPINNED SURFACE SPINS A.S. BUGAEV AND V.B.
GORSKY, MOSCOW INST. PHYS. & TECHNOL., RUSSIA 823
PC-3 SUPERCONDUCTORS AND OTHERS
(1) FABRICATION AND CHARACTERISTICS OF HIGH-TC SUPERCONDUCTING FLUX FLOW
TRANSISTORS WITH
HIGH TRANSRESISTANCES Z. WEN AND H. ABE, OKI, JAPAN 826
(2) QUASIPARTICLE CHARACTERISTICS AND NOISE PROPERTIES OF
SUPERCONDUCTOR-NORMAL METALSUPERCONDUCTOR QUANTUM WELL DEVICES A.
TAKADA, T. IKUTA*, A. TACHIBANA*, T. FUKUMOTO*, M. HATLE* AND K.
HAMASAKI*, HAKODATE NAT L COLL. TECHNOL., AND *NAGAOKA UNIV. TECHNOL.,
JAPAN 829
(3) OPTICAL AND MAGNETO-OPTICAL STUDIES OF ANOMALOUS ANISOTROPY OF THE
CD, -XMNXTE CRYSTAL
L.-Y. CHEN, S.-M. ZHOU, H.-Z. MA, Y. SU, Y.-H. QIAN, C.-J. CHEN* AND
X.-Z. WANG*, FUDAN UNIV., AND *PEKING UNIV., CHINA 832
(4) PHOTOLUMINESCENCE AND RAMAN SCATTERING OF POROUS GAP
A.N. OBRAZTSOV, V.A. KARAVANSKII* AND V.Y. TIMOSHENKO, MOSCOW STATE
UNIV., AND RUSSIAN ACADEMY OF SCIENCES, RUSSIA 835
PC-4 SYMPOSIUM IV: NEURODEVICES AND NEUROCHIPS 370-396
C-8: OXIDE RELIABILITY II (14:00-15:50)
14:00 (1) NEW SPECTROSCOPIC METHOD FOR DETERMINATION OF ENERGY
DISTRIBUTION OF INTERFACE STATES FOR MOS DEVICES WITH ULTRA-THIN OXIDE
LAYERS H. KOBAYASHI, Y. YAMASHITA, T. MORI, Y. NAKATO, K.H. PARK* AND Y.
NISHIOKA*, OSAKA UNIV., AND *TEXAS INSTRUMENTS JAPAN, JAPAN 838
14:20 (2) STRUCTURAL INHOMOGENEITY OF THERMALLY GROWN SI02 FILMS
EVALUATED WITH TRANSMISSION INFRARED SPECTROSCOPY N. YASUDA AND A.
TORIUMI, TOSHIBA, JAPAN 841
14:40 (3) RELATIONSHIP BETWEEN WATER DIFFUSIVITY OF DIELECTRIC FILMS AND
ACCELERATED HOT CARRIER DEGRADATION CAUSED BY WATER K. FUKUDA, T.
NAKANO, M. FUJISHIMA, N. MURA, K. TOKUNAGA, A. TUZUMITANI AND S.
ICHINOSE, KAWASAKI STEEL, JAPAN 844
15:00 (4) DEVICE-QUALITY SIO2/SI(100) AND SI02/SI(LL 1) INTERFACES
FORMED BY PLASMA-ASSISTED OXIDA TION AND DEPOSITION PROCESSES (INVITED)
T. YASUDA, Y. MA AND G. LUCOVSKY, NORTH CAROLINA STATE UNIV., U.S.A 847
15:30 (5) CONTRIBUTION OF SI/SI02 INTERFACE ROUGHNESS IN THE OBSERVATION
OF CHEMICAL STRUCTURE K. ISHIKAWA, H. OGAWA, C. INOMATA AND S. FUJIMURA,
FUJITSU, JAPAN 850
XXX II
IMAGE 20
C-9: OXIDE RELIABILITY III (16:10-17:50)
16:10 (1) RELATIONSHIP BETWEEN NITROGEN PROFILE AND RELIABILITYOF
HEAVILY OXYNITRIDED TUNNEL OXIDE FILMS FOR FLASH EEPROMS T. ARAKAWA, T.
HAYASHI, M. OHNO, R. MATSUMOTO, A. UCHIYAMA AND H. FUKUDA*, OKI, AND
*MURORAN INST. TECHNOL., JAPAN 853
16:30 (2) HIGHLY RELIABLE SILICON NITRIDE FILMS MADE BY JET VAPOR
DEPOSITION X. WANG, T.P. MA, G.-J. CUI*, T. TAMAGAWA*, J.W. GOLZ*, S.
KARECKI*, B.L. HALPERN* AND J.J. SCHMITT*, YALE UNIV., AND *JET PROCESS
CORP., U.S.A 856
16:50 (3) HIGHLY RELIABLE N20-OXYNITRIDED TUNNEL OXIDES FOR FLASH MEMORY
M. USHIYAMA, M. KATO, T. ADACHI, H. KUME, N. MIYAMOTO*, T. MINE, K.
OGATA, T. NISHIDA AND Y. OHJI, HITACHI, AND *HITACHI DEVICE ENG., JAPAN
859
17:10 (4) NITRIDATION OF SI02 IN NO AMBIENT FOR ULTRATHIN OXYNITRIDE
DIELECTRIC FORMATION M. BHAT, J. KIM, J. YAN, G.W. YOON, L.K. HAN AND
D.L. KWONG, UNIV. TEXAS, U.S.A.... 862 17:30 (5) HIGH QUALITY ONO GATE
DIELECTRICS FABRICATED BY IN-SITU RTCVD G.W. YOON, J. YAN, L.K. HAN, J.
KIM AND D.L. KWONG, UNIV. TEXAS, U.S.A 865
ROOM D
D-2: SI HETERO DEVICES (9:10-10:50)
9:10 (1) SILICON BASED HBT: COMPARISON OF CONCEPTS (INVITED) E. KASPER,
UNIV. STUTTGART, F.R.G 868
9:40 (2) SILICON: GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS; FROM
EXPERIMENT TO TECHNOLOGY (INVITED)
B.S. MEYERSON, D.L. HARAME, M.M. GILBERT, K.T. SCHONENBERG, T.TICE* AND
B. SCHARF*, IBM AND *ANALOG DEVICES INC., U.S.A 871
10:10 (3) THERMAL RUNAWAY TOLERANCE IN DOUBLE HETEROJUNCTION BIPOLAR
TRANSISTORS O. HIDAKA, K. MORIZUKA AND H. MOCHIZUKI, TOSHIBA, JAPAN 874
10:30 (4) MODELLING AND FABRICATION OF A P-CHANNEL SIGE-MOSFET WITH VERY
HIGH MOBILITY AND TRANSCONDUCTANCE
T. VOGELSANG, F. HOFMANN, H. SCHAFER, L. RISCHAND K. HOFMANN*, SIEMENS,
AND *UNIV. HANNOVER, F.R.G 877
SYMPOSIUM II: SOI TECHNOLOGY (11:10-18:00) 253-294
AUGUST 26, FRIDAY
ROOM A
A-10: O.LFIM MOSFETS (9:10-10:40)
9:10 (1) HIGH PERFORMANCE 0.1 FTM CMOS DEVICES (INVITED) K.F. LEE AND
R.H. YAN, AT&T, U.S.A 880
9:40 (2) UNIVERSALITY OF IMPACT IONIZATION RATE IN 0.1//M SI MOSFET H.
KURATA, Y. NARA AND T. SUGII, FUJITSU LABS., JAPAN 883
10:00 (3) HOT CARRIER EFFECTS IN SUB-0.1 FTM MOSFETS F. BALESTRA, T.
MATSUMOTO*, T. SHIMATANI*, M. TSUNO, H. NAKABAYASHI AND
M. KOYANAGI*, HIROSHIMA UNIV., AND *TOHOKU UNIV., JAPAN 886
10:20 (4) KINK EFFECT IN 0.1 FTM BULK SI MOSFETS T. MATSUMOTO, F.
BALESTRA*, T. SHIMATANI, M. TSUNO*, H. NAKABAYASHI* AND M. KOYANAGI,
TOHOKU UNIV., AND *HIROSHIMA UNIV., JAPAN 889
A-LL: HOT CARRIER RELIABILITY (11:00-12:20)
11:00 (1) ANALYTICAL CALCULATION OF THE SUBTHRESHOLD SLOPE INCREASE IN
SHORT CHANNEL MOSFET S BY
TAKING THE DRIFT COMPONENT INTO ACCOUNT S. BIESEMANS AND K.DE MEYER,
IMEC, BELGIUM 892
XXXM
IMAGE 21
11:20 (2) DIFFERENT CONTRIBUTION OF INTERFACE STATES AND SUBSTRATE
IMPURITIES TO COULOMB SCATTERING IN SI MOS INVERSION LAYER
J. KOGA, S. TAKAGI AND A. TORIUMI, TOSHIBA, JAPAN 895
11:40 (3) A NEW PMOSFET S HOT-CARRIER DEGRADATION MODEL FOR
BI-DIRECTIONAL OPERATION S. SHIMIZU, M. TANIZAWA, S. KUSUNOKI, M.
INUISHI AND N. TSUBOUCHI, MITSUBISHI,
JAPAN 898
12:00 (4) TWO-DIMENSIONAL ANALYSIS OF INTERFACE STATE INDUCED
PERFORMANCE DEGRADATION IN LDD MOSFET S T. WANG, C. HUANG* AND T.E.
CHANG, NAT L CHIAO TUNG UNIV. AND *MACRONIX INTERNA TIONAL CO., TAIWAN,
CHINA 901
A-12: MEMORY DEVICES (14:00-15:40)
14:00 (1) ANALYSIS OF ISOLATION DEGRADATION INDUCED BY INTERLAYER
MATERIAL IN CAPACITOR OVER BITLINE (COB) DRAM CELL H. MORI, K.
SHIBAHARA, K. KOYAMA AND N. KODAMA, NEC, JAPAN 904
14:20 (2) A 0.4/RNI GATE-AIL-AROUND TFT (GAT) USING A DUMMY NITRIDE
PATTERN FOR HIGH DENSITY MEMORIES S. MAEGAWA, T. IPPOSHI, S. MAEDA, H.
NISHIMURA*, O. TANINA, H. KURIYAMA, Y. INOUE
AND N. TSUBOUCHI, MITSUBISHI, AND *RYODEN SEMICONDUCTOR SYSTEM ENG.,
JAPAN 907 14:40 (3) A NOVEL SOURCE-SIDE INJECTION SPLIT-GATE FLASH CELL
TECHNOLOGY FOR HIGH DENSITY LOW
VOLTAGE APPLICATIONS Y. YAMAUCHI, M. YOSHIMI, K. OMORI, S. NITTA, N.
MIZUKOSHI AND K. SUZUKI, SHARP, JAPAN 910
15:00 (4) 256 MBIT HIGH DENSITY CMOS NON VOLATILE MEMORIES FIELD
ISOLATION BY USING HIGH TEMPERATURE POLY BUFFER LOCOS(HTPBL) S.
DELEONIBUS, P. SPINELLI, F. VINET, M. HEITZMANN, G. GUEGAN AND C.
LEROUX, LETI,
FRANCE 913
15:20 (5) HIGHLY RELIABLE ANTIFUSE WITH TISIX/P-SIN/TIN STRUCTURE FOR
3.3 V OPERATED HIGH SPEED FPGA APPLICATION Y. TAMURA, H. SHINRIKI AND T.
OHTA, KAWASAKI STEEL, JAPAN 916
ROOM B
SYMPOSIUM 1-9: APCT 94 CHARACTERIZATION I (9:10-10:50) 108-122
SYMPOSIUM MO: APCT 94 OPTICAL DEVICES I (11:10-12:40) 123-132
SYMPOSIUM ML: APCT 94 OPTICAL DEVICES II (14:00-15:50) 133-147
ROOM C
C-10: INTERCONNECT TECHNOLOGY I (9:10-10:30)
9:10 (1) ELECTROMIGRATION RESISTANCE MEASUREMENTS OF MULTILAYERED
INTERCONNECTIONS BY SHORT TEST LINES
S. FUKADA, M. HIRASAWA AND M. SUZUKI*, HITACHI, AND *SEMICONDUCTOR AND
INTEGRATED
CIRCUIT DIVISION, HITACHI, LTD., JAPAN 919
9:30 (2) RESISTANCE OSCILLATIONS INDUCED BY A DIRECT CURRENT
ELECTROMIGRATION K. FUJIKI, A. SANO, K. INOUE, H. SAKAUE, S. SHIGUBARA
AND Y. HORIIKE*, HIROSHIMA UNIV. AND *TOYO UNIV., JAPAN 922
9:50 (3) STUDIES OF CORROSIVE OUTGASSES FROM VIA HOLES USING THERMAL
DESORPTION SPECTROSCOPY S. TOKITOH, H. UCHIDA, H. UCHIDA, Y. OKUNO, K.
FUSHIMI, G. LIU, Y. SAKAYA AND N. HIRASHITA, OKI, JAPAN 925
10:10 (4) HIGH TEMPERATURE VOID FORMATION INDUCED BY H20 IN AL
INTERCONNECTION WITH SIN/PSG PASSIVATION
T. UEDA, S. UEDA, K. YANO AND N. NOMURA, MATSUSHITA, JAPAN 928
XXXIV
IMAGE 22
C-LL: INTERCONNECT TECHNOLOGY II (10:50-12:30)
10:50 (1) ION-ASSISTED LOW-TEMPERATURE SURFACE REFLOW OF BPSG FOR
HIGHLY-RELIABLE CONTACT METALLIZATION
O. TATSUMI, K. INO, N. KONISHI, Y. KAWAI AND T. OHMI, TOHOKU UNIV.,
JAPAN 931 11:10 (2) AMMONIUM SALT ADDED SILICA SLURRY FOR CHEMICAL
MECHANICAL POLISHING (CMP) OF INTERLAYER DIELECTRIC FILM
Y. HAYASHI, M. SAKURAI, T. NAKAJIMA, K. HAYASHI, S. SASAKI, S. CHIKAKI
AND T. KUNIO, NEC, JAPAN 934
11:30 (3) FORMATION OF COPPER INTERCONNECTS BY REFLOW OF SPUTTERED
COPPER FILMS K. ABE, Y. HARADA, K. HASHIMOTO AND H. ONODA, OKI, JAPAN
937
11:50 (4) CHARACTERISTICS OF THE OXIDATION BARRIER LAYERS FOR COPPER
METALLIZATION K.-I. LEE, K.-I. MIN*, S.-K. JOO*, K.-G. RHA AND W.-S.
KIM, GOLDSTAR, AND *SEOUL NAT L UNIV., KOREA 940
12:10 (5) HIGH RELIABILITY COPPER INTERCONNECTS THROUGH DRY ETCHING
PROCESS Y. IGARASHI, T. YAMANOBE AND T. ITO, OKI, JAPAN 943
C-12: INTERCONNECT TECHNOLOGY III (14:00-15:40)
14:00 (1) SELECTIVE CVD-A1 CONTACT PLUG ON RAPID THERMAL PROCESSED TISI2
IN NH3 FOR HIGH SPEED CMOS USING SALICIDE PROCESS H. SHINRIKI, T.
KOMIYA, N. TAKEYASU AND T. OHTA, KAWASAKI STEEL, JAPAN 946
14:20 (2) AL GROWTH ON SI(LLL)(V3~X-/3)-GA SURFACES AT ROOM TEMPERATURE
K. MAEHASHI, H. KATSUKI AND H. NAKASHIMA, OSAKA UNIV., JAPAN 949
14:40 (3) INTERFACE REACTIONS IN AL-ALLOY/TI LAYERED STRUCTURES T.
NARITA, K. HASHIMOTO, Y. HARADA AND H. ONODA, OKI, JAPAN 952
15:00 (4) SOLID-PHASE REACTIONS IN AL ALLOY/TIN/TI/SI SYSTEMS OBSERVED
BY IN-SITU CROSS-SECTIONAL TEM S. SOBUE, S. MUKAINAKANO, Y. UENO AND T.
HATTORI, NIPPONDENSO, JAPAN 955
15:20 (5) SUPPRESSION OF AI/W REACTION IN AL/W LAYERED INTERCONNECTS BY
W SURFACE TREATMENT BEFORE AL DEPOSITION Y. HARADA, Y. ITOH AND H.
ONODA, OKI, JAPAN 958
ROOM D
LD: LATE NEWS (9:10-12:30)
(1) HIGH COUPLED POWER 0.98 FTM NARROW BEAM LASERS
A. SHIMA, T. KAMIZATO, A. TAKEMOTO, S. KARAKIDA, Y. NAGAI, Y. YOSHIDA
AND E. OMURA, MITSUBISHI, JAPAN 961
(2) PHOTOVOLTAIC PB,_XSNXSE-ON-SI IR-SENSOR ARRAYS FOR THERMAL IMAGING
H. ZOGG, A. FACH, J. JOHN, J. MASEK, P. MULLER AND C. PAGLINO, AFIF,
SWITZERLAND... .963 (3) FABRICATION AND EVALUATION OF THREE-DIMENSIONAL
OPTICALLY-COUPLED COMMON MEMORY
K. MIYAKE, T. NAMBA, K. HASHIMOTO, H. SAKAUE*, S. MIYAZAKI*, Y.
HORIIKE**, S.
YOKOYAMA, M. KOYANAGI*** AND M. HIROSE, HIROSHIMA UNIV., *TOYO UNIV AND
**TOHOKU UNIV., JAPAN 965
(4) HIGHLY CONDUCTIVE P-TYPE ZNSE FORMATION USING LI3N DIFFUSION
S.W. LIM, T. HONDA, K. YANASHIMA, K. INOUE, H. MUNEKATA, H. KUKIMOTO, F.
KOYAMA AND K. IGA, TOKYO INST. TECH., JAPAN 967
(5) MOVPE GROWTH OF BERYLLIUM DOPED INP USING
BISMETHYLCYCLOPENTADIENYL-BERYLLIUM
T. KIMURA, T. ISHIDA, T. SONODA, S. TAKAMIYA AND S. MITSUI, MITSUBISHI,
JAPAN 969
(6) A NOVEL WIRE TRANSISTOR STRUCTURE WITH IN-PLANE GATE USING DIRECT
SCHOTTKY CONTACTS TO
2DEG H. OKADA, K. JINUSHI, N.-J. WU, T. HASHIZUME AND H. HASEGAWA,
HOKKAIDO UNIV., JAPAN 971
(7) INAS FIELD-EFFECT TRANSISTORS WITH A DEEP QUANTUM WELL STRUCTURE
S. MIYA, N. KUZE, K. NAGASE, A. ICHII, Y. TOYAMA, M. OZAKI AND I.
SHIBASAKI, ASAHI
CHEMIAL IND. CO., LTD., JAPAN 973
XXXV
IMAGE 23
E
(8) SUB-MICRON VERTICAL ALGAAS/GAAS RESONANT TUNNELING SINGLE ELECTRON
TRANSISTOR
D.G. AUSTING, T. HONDA AND S. TARUCHA, NTT, JAPAN 975
(9) MULTIPLE NEGATIVE TRANSCONDUCTANCES IN AN INDENTED GATE ALGAAS/GAAS
MODULATION
DOPED FIELD EFFECT TRANSISTOR K.W. PARK, S. LEE, M. SHIN, E.-H. LEE AND
H.C. KWON*, ELEC. TELECOM. RES. INST, AND KOREA RES. INST. STANDARDS &
SCI., KOREA 977
(10) MONOSTABLE-BISTABLE TRANSITION LOGIC ELEMENTS (MOBILES) BASED ON
MONOLITHIC INTEGRA TION OF RESONANT TUNNELING DI MODE AND FET K.J.
CHEN, T. AKEYOSHI AND K. MAEZAWA, NTT, JAPAN 979
(11) EFFECTS OF GROWN-IN HYDROGEN ON ELECTRICAL PROPERTIES OF
CZOCHRALSKI SILICON CRYSTALS
A. HARA, M. KOIZUKA, H. YAMADA-KANETA AND H. MORI, FUJITSU, JAPAN 981
(12) OXYGEN PRECIPITATE DENSITY CONTROL IN CZ-SI WAFERS BY HYDROGEN
ANNEALING PROCESS
K. IZUNOME, H. SHIRAI, K. KASHIMA, J. YOSHIKAWA AND A. HOJO, TOSHIBA
CERAMICS, JAPAN 983
(13) ELEMENT SPECIFIC DIAGNOSIS USING //-PCD
L. KOSTER, P. BLOCHL AND L. FABRY, WACKER, F.R.G 985
(14) PHOTOVOLTAIC INVESTIGATIONS OF INTERBAND TRANSITIONS IN SIGE/SI
MULTIPLE QUANTUM WELLS
J.-B. WANG, F. LU, H.-H. SUN, D.-W. GONG AND X. WANG, FUDAN UNIVERSITY,
CHINA .. .987 (15) A NOVEL TRENCH CAPPING PROCESS USING CMP WITH
ENDPOINT DETECTION
H. INOKAWA, M. MIYAKE, S. NAKAYAMA AND T. KOBAYASHI, NTT, JAPAN 989
(16) HIGH SPEED FULLY DEPLETED CMOS/SIMOX GATE ARRAY
X. ZHANG, L. WEI, Y. LI AND Y. WANG, PEKING UNIV., CHINA 991
(17) LOW-TEMPERATURE DRAIN CURRENT CHARACTERISTICS IN SUB-10-MIN-THICK
SOI NMOSFET S ON
SIMOX SUBSTRATES Y. OMURA AND M. NAGASE, NTT, JAPAN 993
(18) ON-CURRENT STABILITY OF POLY-SI THIN FILM TRANSISTOR WITH SI-RICH
OXIDE AS INTERMETAL
DIELECTRIC FILM AFTER NEGA TIVE BIAS TEMPERATURE STRESS G.-S. CHOI,
J.-H. CHOI, Y.-J. LEE, J.-W. NAM, S.-R. MA, K.-S. CHANG, J.-S. YOON AND
H.-K. YOON, HYUNDAI ELEC, KOREA 995
(19) A NOVEL LATERAL IGBT STRUCTURE WITH IMPROVING THE DYNAMIC LATCH-UP
PERFORMANCES
H. SUMIDA AND A. HIRABAYASHI, FUJI ELEC. R&D, JAPAN 997
(20) A NOVEL FABRICATION METHOD FOR SHORT CHANNEL MOSFET S USING
SELF-ALIGNED ULTRASHALLOW JUNCTION FORMATION BY SELECTIVE SI|_XGEX CVD
K. GOTO, J. MUROTA, F. HONMA, T. MATSUURA AND Y. SAWADA, TOHOKU UNIV.,
JAPAN 999
XXXVI
|
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| indexdate | 2024-07-09T18:48:46Z |
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| spelling | International Conference on Solid State Devices and Materials 1994 Yokohama Verfasser (DE-588)5117429-7 aut Extended abstracts of the 1994 International Conference on Solid State Devices and Materials August 23 - 26, 1994, Yokohama Tokyo Japan Soc. of Applied Physics 1994 XXXVI, 1010 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Werkstoff (DE-588)4065579-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1994 Yokohama gnd-content Halbleiterbauelement (DE-588)4113826-0 s Werkstoff (DE-588)4065579-9 s DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009292170&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Extended abstracts of the 1994 International Conference on Solid State Devices and Materials August 23 - 26, 1994, Yokohama Halbleiterbauelement (DE-588)4113826-0 gnd Werkstoff (DE-588)4065579-9 gnd |
| subject_GND | (DE-588)4113826-0 (DE-588)4065579-9 (DE-588)1071861417 |
| title | Extended abstracts of the 1994 International Conference on Solid State Devices and Materials August 23 - 26, 1994, Yokohama |
| title_auth | Extended abstracts of the 1994 International Conference on Solid State Devices and Materials August 23 - 26, 1994, Yokohama |
| title_exact_search | Extended abstracts of the 1994 International Conference on Solid State Devices and Materials August 23 - 26, 1994, Yokohama |
| title_full | Extended abstracts of the 1994 International Conference on Solid State Devices and Materials August 23 - 26, 1994, Yokohama |
| title_fullStr | Extended abstracts of the 1994 International Conference on Solid State Devices and Materials August 23 - 26, 1994, Yokohama |
| title_full_unstemmed | Extended abstracts of the 1994 International Conference on Solid State Devices and Materials August 23 - 26, 1994, Yokohama |
| title_short | Extended abstracts of the 1994 International Conference on Solid State Devices and Materials |
| title_sort | extended abstracts of the 1994 international conference on solid state devices and materials august 23 26 1994 yokohama |
| title_sub | August 23 - 26, 1994, Yokohama |
| topic | Halbleiterbauelement (DE-588)4113826-0 gnd Werkstoff (DE-588)4065579-9 gnd |
| topic_facet | Halbleiterbauelement Werkstoff Konferenzschrift 1994 Yokohama |
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