Proceedings of the 1st International Seminar on Semiconductor Surface Passivation: 19 - 22 September 1999, Ustroń, Poland
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
Amsterdam [u.a.]
Elsevier
2000
|
| Schriftenreihe: | Vacuum
57,2 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Einzelaufnahme eines Zeitschr.-H. |
| Beschreibung: | S. 112 - 242 Ill., graph. Darst. |
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Datensatz im Suchindex
| _version_ | 1804128395487870976 |
|---|---|
| adam_text | VACUUM
Volume 57/number
2/Мау
2000
Contents
SPECIAL ISSUE
Proceedings of the
1st
International Seminar on
Semiconductor Surface Passivation SSP 99
19-22
September
1999,
Ustroń,
Poland
AUTHORS
ARTICLES
J Szuber
109
Preface
Theoretical studies of semiconductor surface passivation
В
Adamowicz and
H
Hasegawa
111
G P Srivastava
Computer analysis of photon-induced non-equilibrium phe¬
nomena at Si and AIGaAs surfaces
121
Theoretical modelling of semiconductor surfaces and interfaces
Sulfide
passivation of semiconductor surfaces and interfaces
131
The deposition of transition metal layers on sulphur-terminated
InPClOO) surfaces studies by core level photoemission spectro-
scopy
139
GaAs surface passivation by ultra-high vacuum deposition of
chalcogen atoms
145
A novel sulfur-passivation method and magnetic overlayers on
passivated Ill-V semiconductor surface
157
Some effects of (NH4)2 Sx treatment of n-GaAs surface on electri¬
cal characteristics of metal-SiC^-GaAs structures
G J
Hughes,
P
Ryan,
P
üuinn
and
A A Cafolla
D R T
Zahn,
T U
Kampen,
S Hohenecker
and W
Braun
Zhang Xinyi, Zhang Fapei,
Lu
Erdong
and Xu Pengshou
S
Kochowski,
B Paszkiewicz
and
R
Paszkiewicz
T
V L vova, I V Sedova,
V P Ulin,
163
S
V
Sorokin,
V A Solov ev, A A Sitnikova,
V L
Berkovits and
S V Ivanov
E
Papis, A Piotrowska,
E
Kamińska,
171
К
Gołaszewska, W Jung,
J
Katcki,
A Kudła,
M
Piskorski,
T T
Piotrowski
and J
Adamczewska
Molecular-beam epitaxy of ZnSe-based heterostructures on
Na2
S-passìvated GaAs
substrates
Sulfide
treatment of GaSb surface: influence on the LPE growth
of InGaAsSb AIGaAsSb heterostructures
Experimental studies of semiconductor surface passivation
179
Passivation of compound-semiconductor surfaces for low-noise
terahertz devices
189
Real-time spectroscopic ellipsometry for Ill-V surface modifica¬
tions. Hydrogen passivation, oxidation and nitridation by
plasma processing
201
Chemical nitridation of GaAsdOO) by hydrazine-sulfide water
solutions
H L
Hartnagel
and
С
I
Lin
G Bruno,
P Capezzuto and M Losurdo
V L Berkovits, T V Ľvova and V P Ulin
J Szuber
209
New procedure for determination of the interface Fermi level
position for atomic hydrogen cleaned GaAsdOO) surface using
photoemission
Experimental
studies of semiconductor-interface formation
В
Akkal,
Z
Benamara,
В
Gruzza and
219
Characterization of interface states at
Au
InSb
ІпР(ЮО)
Schottky
L
Bideux barrier diodes as a function of frequency
P
Mazurek,
A Daniluk,
К
Paprockì
229
Analysis of RHEED intensities during formations of the
CaF2/Si(111) and MgO
YS h^ SH1
00)
interface
M
Nowak
and
В
Sołecka
237
Application of high-frequency contactless method of
РЕМ
in¬
vestigations to examine near-surface layer of Si and GaAs
|
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| spelling | International Seminar on Semiconductor Surface Passivation 1 1999 Ustroń Verfasser (DE-588)3045492-X aut Proceedings of the 1st International Seminar on Semiconductor Surface Passivation 19 - 22 September 1999, Ustroń, Poland guest ed.: Jacek Szuber Amsterdam [u.a.] Elsevier 2000 S. 112 - 242 Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Vacuum 57,2 Einzelaufnahme eines Zeitschr.-H. Passivierung (DE-588)4173500-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1999 Ustroń Bielitz-Biala gnd-content Halbleiter (DE-588)4022993-2 s Passivierung (DE-588)4173500-6 s DE-604 Szuber, Jacek Sonstige oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009283599&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the 1st International Seminar on Semiconductor Surface Passivation 19 - 22 September 1999, Ustroń, Poland Passivierung (DE-588)4173500-6 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4173500-6 (DE-588)4022993-2 (DE-588)1071861417 |
| title | Proceedings of the 1st International Seminar on Semiconductor Surface Passivation 19 - 22 September 1999, Ustroń, Poland |
| title_auth | Proceedings of the 1st International Seminar on Semiconductor Surface Passivation 19 - 22 September 1999, Ustroń, Poland |
| title_exact_search | Proceedings of the 1st International Seminar on Semiconductor Surface Passivation 19 - 22 September 1999, Ustroń, Poland |
| title_full | Proceedings of the 1st International Seminar on Semiconductor Surface Passivation 19 - 22 September 1999, Ustroń, Poland guest ed.: Jacek Szuber |
| title_fullStr | Proceedings of the 1st International Seminar on Semiconductor Surface Passivation 19 - 22 September 1999, Ustroń, Poland guest ed.: Jacek Szuber |
| title_full_unstemmed | Proceedings of the 1st International Seminar on Semiconductor Surface Passivation 19 - 22 September 1999, Ustroń, Poland guest ed.: Jacek Szuber |
| title_short | Proceedings of the 1st International Seminar on Semiconductor Surface Passivation |
| title_sort | proceedings of the 1st international seminar on semiconductor surface passivation 19 22 september 1999 ustron poland |
| title_sub | 19 - 22 September 1999, Ustroń, Poland |
| topic | Passivierung (DE-588)4173500-6 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Passivierung Halbleiter Konferenzschrift 1999 Ustroń Bielitz-Biala |
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