Fundamental aspects of silicon oxidation:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2001
|
| Schriftenreihe: | Springer series in materials science
46 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIII, 260 S. Ill., graph. Darst. |
| ISBN: | 354041682X |
Internformat
MARC
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| 245 | 1 | 0 | |a Fundamental aspects of silicon oxidation |c Yves J. Chabal (ed.) |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2001 | |
| 300 | |a XIII, 260 S. |b Ill., graph. Darst. | ||
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Datensatz im Suchindex
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|---|---|
| adam_text | YVES J. CHABAL (ED.) FUNDAMENTAL ASPECTS OF SILICON OXIDATION WITH 147
FIGURES, 21 IN COLOR SPRINGER CONTENTS 1 INTRODUCTION L. C. FELDMAN 1
1.1 THE SILICON MOSFET 1 1.2 SURFACE STATES AND THE EARLY DISCOVERIES 3
1.3 NEW TECHNOLOGIES 4 1.4 SILICON DIOXIDE GROWTH 4 1.5 MICROSTRUCTURE
OF THE INTERFACE ; 5 REFERENCES 8 2 MORPHOLOGICAL ASPECTS OF SILICON
OXIDATION IN AQUEOUS SOLUTIONS MELISSA A. HINES 13 2.1 INTRODUCTION 13
2.2 REACTION ANISOTROPY AND THE CONTROL OF ATOMIC-SCALE MORPHOLOGY 14
2.3 EXTREME ANISOTROPY: NH 4 F ETCHING OF SI(LLL) 15 2.4 CONTROLLING
ANISOTROPY: THE CURIOUS EFFECTS OF ISOPROPANOL 18 2.5 CORRELATED
REACTIONS AND THE DEVELOPMENT OF MESOSCALE MORPHOLOGIES 21 2.6
CORRELATED ETCHING: THE SURPRISING ROLE OF ETCH PITS 21 2.7 KINETIC
STRUCTURES AND THE DEVELOPMENT OF ETCH HILLOCKS 24 2.8 USING
MICROMACHINED PATTERNS TO STUDY SURFACE CHEMISTRY 27 2.9 CONCLUSIONS AND
OUTLOOK 32 REFERENCES 33 3 STRUCTURAL EVOLUTION OF THE SILICON/OXIDE
INTERFACE T URING PASSIVE AND ACTIVE OXIDATION F. M. ROSS, J. M. GIBSON
35 3.1 INTRODUCTION 35 3.2 PASSIVE AND ACTIVE OXIDATION IN SITU IN THE
TEM 36 3.3 PASSIVE OXIDATION AS A LAYER-BY-LAYER PROCESS 40 3.3.1 WHAT
CAN IN SITU EXPERIMENTS REVEAL ABOUT THE REACTION MECHANISM? 42 3.3.2
STRESS, ORDERING AND STOICHIOMETRY AT THE INTERFACE 48 3.4 ACTIVE
OXIDATION AS A STEP-FLOW PROCESS 49 VIII CONTENTS 3.4.1 KINETIC
MEASUREMENTS OF STEP NUCLEATION AND FLOW 50 3.5 CONTROL OF SURFACE
MORPHOLOGY DURING DEVICE PROCESSING 54 3.6 ELECTRON BEAM EFFECTS DURING
IN SITU ELECTRON MICROSCOPY 55 3.7 CONCLUSIONS 56 REFERENCES 57 4
OXIDATION OF H-TERMINATED SILICON T. HATTORI, H. NOHIRA 61 4.1
INTRODUCTION 61 4.2 EXPERIMENTAL AND ANALYTICAL DETAILS 63 4.3 INITIAL
STAGE OF OXIDATION OF H-TERMINATED SI SURFACES 65 4.3.1 INITIAL STAGE OF
OXIDATION OF THE H-SI(LLL)-LXL SURFACE 65 4.3.2 INITIAL STAGE OF
OXIDATION OF THE H-SI(100)-2XL SURFACE 69 4.4 LAYER-BY-LAYER OXIDATION
REACTION AT THE INTERFACE 72 4.4.1 LAYER-BY-LAYER OXIDATION REACTION AT
THE SIO 2 /SI(LLL) INTERFACE 72 4.4.2 LATERAL SIZE OF ATOMICALLY FLAT
INTERFACE 75 4.4.3 EFFECT OF INITIAL SURFACE MORPHOLOGY ON THE SIO 2
/SI(100) INTERFACE STRUCTURES 76 4.5 OXIDATION-INDUCED ROUGHNESS OF
OXIDE SURFACES 78 4.5.1 OXIDATION-INDUCED SURFACE ROUGHNESS ON SI(LLL)
78 4.5.2 OXIDATION-INDUCED SURFACE ROUGHNESS ON SI(100) 79 4.6 VALENCE
BAND DISCONTINUITIES AT AND NEAR THE SIO2/SI INTERFACE 85 4.7 SUMMARY
AND FUTURE DIRECTIONS 85 REFERENCES 87 5 LAYER-BY-LAYER OXIDATION OF
SI(OOL) SURFACES H. WATANABE, N. MIYATA, M. ICHIKAWA 89 5.1 INTRODUCTION
89 5.2 EXPERIMENTAL DETAILS 90 5.3 SREM OBSERVATION OF THE INITIAL
OXIDATION OF SI(001)-2 X 1 SURFACES 92 5.4 MECHANISM OF LAYER-BY-LAYER
OXIDATION 95 5.5 KINETICS OF INITIAL LAYER-BY-LAYER OXIDATION 98 5.6
FURNACE OXIDATION AT HIGH TEMPERATURE 101 5.7 SUMMARY 104 REFERENCES 104
6 ATOMIC DYNAMICS DURING SILICON OXIDATION A. PASQUARELLO, M. S.
HYBERTSEN, R. CAR 107 6.1 INTRODUCTION 107 6.2 THEORETICAL APPROACH 110
6.3 ATOMIC PROCESSES DURING OXIDATION 112 CONTENTS IX 6.4 MODEL
STRUCTURE OF SI(001)-SIO 2 INTERFACE 116 6.5 MODEL OF OXIDATION 119 6.6
DISCUSSION AND CONCLUSION 121 REFERENCES 123 7 FIRST-PRINCIPLES QUANTUM
CHEMICAL INVESTIGATIONS OF SILICON OXIDATION KRISHNAN RAGHAVACHARI 127
7.1 INTRODUCTION 127 7.2 THEORETICAL APPROACH 128 7.3 WATER-INDUCED
OXIDATION OF SI(100)-(2 X 1) 130 7.3.1 INITIAL ADSORPTION OF WATER ON
SI(100)-(2 X 1) 131 7.3.2 THERMODYNAMICS OF OXYGEN INSERTION AND
AGGREGATION 132 7.3.3 VIBRATIONAL SPECTRA AT 600 K - OXYGEN MIGRATION
134 7.3.4 HIGHER TEMPERATURE ANNEALING - OXYGEN AGGLOMERATION .... 136
7.3.5 CONTINUOUS OXIDE FORMATION 139 7.4 CONCLUSIONS 139 REFERENCES 140
8 VIBRATIONAL STUDIES OF ULTRA-THIN OXIDES AND INITIAL SILICON OXIDATION
Y.J. CHABAL, M.K. WELDON, K.T. QUEENEY, A. ESTEVE 143 8.1 INTRODUCTION
143 8.2 SCIENTIFIC CHALLENGES 144 8.2.1 SPECTROSCOPIC CONSIDERATIONS 145
8.2.2 THEORETICAL CONSIDERATIONS 146 8.3 NATURE OF ULTRA-THIN SILICON
OXIDES AND SI/SIO 2 INTERFACE 147 8.4 WATER OXIDATION OF SI(100)-(2 X 1)
151 8.4.1 INITIAL OXYGEN INSERTION AND AGGLOMERATION 151 8.4.2
CONTINUOUS OXIDE FORMATION 155 8.5 CONCLUSIONS 157 REFERENCES 158 9 ION
BEAM STUDIES OF SILICON OXIDATION AND OXYNITRIDATION W. H. SCHULTE, T.
GUSTAFSSON, E. GARFUNKEL, I. J. R. BAUMVOL, E. P. GUSEV 161 9.1
INTRODUCTION 161 9.2 EXPERIMENTAL TECHNIQUES 161 9.2.1 ION SCATTERING
TECHNIQUES 161 9.2.2,NUCLEAR REACTION TECHNIQUES 167 9.2.3 ISOTOPE
TRACING TECHNIQUES 171 9.3 SILICON OXIDATION 172 9.4 SILICON
OXYNITRIDATION 179 X CONTENTS 9.5 HYDROGEN IN ULTRATHIN SIO 2 FILMS 183
REFERENCES 188 10 LOCAL AND GLOBAL BONDING AT THE SI-SIO 2 INTERFACE S.
T. PANTELIDES, R. BUCZKO, M. RAMAMOORTHY, S. RASHKEEV, G. DUSCHER, S. J.
PENNYCOOK 193 10.1 INTRODUCTION 193 10.2 THE OXIDATION PROCESS AND LOCAL
BONDING ARRANGEMENTS 196 10.3 GLOBAL BONDING AT THE INTERFACE 200 10.4
Z-CONTRAST MICROSCOPY 205 10.5 ELECTRON ENERGY LOSS SPECTROSCOPY 209
REFERENCES 218 11 EVOLUTION OF THE INTERFACIAL ELECTRONIC STRUCTURE
DURING THERMAL OXIDATION D. A. MULLER, J. B. NEATON 219 11.1
INTRODUCTION 219 11.2 IMAGE FORMATION IN STEM 221 11.3 MEASURING
INTERFACE ROUGHNESS AND OXIDE THICKNESS 223 11.4 MAPPING INTERFACE
STATES WITH EELS 227 11.5 COMPARING ELECTRONIC STRUCTURE CALCULATIONS
AND EELS 234 11.6 EVOLUTION OF THE LOCAL ELECTRONIC STRUCTURE 238 11.7
CONCLUSIONS 243 REFERENCES 244 12 STRUCTURE AND ENERGETICS OF THE
INTERFACE BETWEEN SI AND AMORPHOUS SIO 2 YUHAI TU, J. TERSOFF 247 12.1
INTRODUCTION 247 12.2 METHOD 247 12.3 CALCULATION AND RESULTS 249 12.4
DISCUSSION 253 12.5 CONCLUSION 254 REFERENCES 255 INDEX 257
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| id | DE-604.BV013558471 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:47:58Z |
| institution | BVB |
| isbn | 354041682X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009259630 |
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| owner | DE-703 DE-91G DE-BY-TUM DE-83 |
| owner_facet | DE-703 DE-91G DE-BY-TUM DE-83 |
| physical | XIII, 260 S. Ill., graph. Darst. |
| publishDate | 2001 |
| publishDateSearch | 2001 |
| publishDateSort | 2001 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in materials science |
| series2 | Springer series in materials science Physics and astronomy online library |
| spelling | Fundamental aspects of silicon oxidation Yves J. Chabal (ed.) Berlin [u.a.] Springer 2001 XIII, 260 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 46 Physics and astronomy online library Silice Silicium - Oxydation ram Silicon oxide Silicium (DE-588)4077445-4 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Oxidation (DE-588)4137187-2 gnd rswk-swf Kristallfläche (DE-588)4151344-7 gnd rswk-swf Schichtwachstum (DE-588)4273432-0 gnd rswk-swf Siliciumdioxid (DE-588)4077447-8 gnd rswk-swf Silicium (DE-588)4077445-4 s Kristallfläche (DE-588)4151344-7 s Oxidation (DE-588)4137187-2 s DE-604 Siliciumdioxid (DE-588)4077447-8 s Dünne Schicht (DE-588)4136925-7 s Schichtwachstum (DE-588)4273432-0 s Chabal, Yves J. Sonstige oth Springer series in materials science 46 (DE-604)BV000683335 46 HEBIS Datenaustausch Darmstadt application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009259630&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Fundamental aspects of silicon oxidation Springer series in materials science Silice Silicium - Oxydation ram Silicon oxide Silicium (DE-588)4077445-4 gnd Dünne Schicht (DE-588)4136925-7 gnd Oxidation (DE-588)4137187-2 gnd Kristallfläche (DE-588)4151344-7 gnd Schichtwachstum (DE-588)4273432-0 gnd Siliciumdioxid (DE-588)4077447-8 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4136925-7 (DE-588)4137187-2 (DE-588)4151344-7 (DE-588)4273432-0 (DE-588)4077447-8 |
| title | Fundamental aspects of silicon oxidation |
| title_auth | Fundamental aspects of silicon oxidation |
| title_exact_search | Fundamental aspects of silicon oxidation |
| title_full | Fundamental aspects of silicon oxidation Yves J. Chabal (ed.) |
| title_fullStr | Fundamental aspects of silicon oxidation Yves J. Chabal (ed.) |
| title_full_unstemmed | Fundamental aspects of silicon oxidation Yves J. Chabal (ed.) |
| title_short | Fundamental aspects of silicon oxidation |
| title_sort | fundamental aspects of silicon oxidation |
| topic | Silice Silicium - Oxydation ram Silicon oxide Silicium (DE-588)4077445-4 gnd Dünne Schicht (DE-588)4136925-7 gnd Oxidation (DE-588)4137187-2 gnd Kristallfläche (DE-588)4151344-7 gnd Schichtwachstum (DE-588)4273432-0 gnd Siliciumdioxid (DE-588)4077447-8 gnd |
| topic_facet | Silice Silicium - Oxydation Silicon oxide Silicium Dünne Schicht Oxidation Kristallfläche Schichtwachstum Siliciumdioxid |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009259630&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000683335 |
| work_keys_str_mv | AT chabalyvesj fundamentalaspectsofsiliconoxidation |