Gateisolatoren für MOS-Feldeffekttransistoren:
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | German |
| Published: |
2000
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| Subjects: | |
| Item Description: | München, Univ. der Bundeswehr, Diss., 2000 |
| Physical Description: | VIII, 162 S. Ill., graph. Darst. |
Staff View
MARC
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| 500 | |a München, Univ. der Bundeswehr, Diss., 2000 | ||
| 650 | 0 | 7 | |a Siliciumdioxid |0 (DE-588)4077447-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Gate-Oxid |0 (DE-588)4269383-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Titandioxid |0 (DE-588)4185549-8 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Gate-Oxid |0 (DE-588)4269383-4 |D s |
| 689 | 0 | 1 | |a Siliciumdioxid |0 (DE-588)4077447-8 |D s |
| 689 | 0 | 2 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
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| 689 | 1 | 0 | |a Gate-Oxid |0 (DE-588)4269383-4 |D s |
| 689 | 1 | 1 | |a Titandioxid |0 (DE-588)4185549-8 |D s |
| 689 | 1 | 2 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 1 | |5 DE-604 | |
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Record in the Search Index
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| author | Pompl, Thomas |
| author_facet | Pompl, Thomas |
| author_role | aut |
| author_sort | Pompl, Thomas |
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| building | Verbundindex |
| bvnumber | BV013552650 |
| classification_tum | ELT 321d |
| ctrlnum | (OCoLC)76254534 (DE-599)BVBBV013552650 |
| discipline | Elektrotechnik |
| format | Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV013552650 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:47:51Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009254658 |
| oclc_num | 76254534 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-12 DE-29T DE-706 |
| owner_facet | DE-91 DE-BY-TUM DE-12 DE-29T DE-706 |
| physical | VIII, 162 S. Ill., graph. Darst. |
| publishDate | 2000 |
| publishDateSearch | 2000 |
| publishDateSort | 2000 |
| record_format | marc |
| spelling | Pompl, Thomas Verfasser aut Gateisolatoren für MOS-Feldeffekttransistoren Thomas Pompl 2000 VIII, 162 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Univ. der Bundeswehr, Diss., 2000 Siliciumdioxid (DE-588)4077447-8 gnd rswk-swf Gate-Oxid (DE-588)4269383-4 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Titandioxid (DE-588)4185549-8 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Gate-Oxid (DE-588)4269383-4 s Siliciumdioxid (DE-588)4077447-8 s MOS-FET (DE-588)4207266-9 s DE-604 Titandioxid (DE-588)4185549-8 s |
| spellingShingle | Pompl, Thomas Gateisolatoren für MOS-Feldeffekttransistoren Siliciumdioxid (DE-588)4077447-8 gnd Gate-Oxid (DE-588)4269383-4 gnd MOS-FET (DE-588)4207266-9 gnd Titandioxid (DE-588)4185549-8 gnd |
| subject_GND | (DE-588)4077447-8 (DE-588)4269383-4 (DE-588)4207266-9 (DE-588)4185549-8 (DE-588)4113937-9 |
| title | Gateisolatoren für MOS-Feldeffekttransistoren |
| title_auth | Gateisolatoren für MOS-Feldeffekttransistoren |
| title_exact_search | Gateisolatoren für MOS-Feldeffekttransistoren |
| title_full | Gateisolatoren für MOS-Feldeffekttransistoren Thomas Pompl |
| title_fullStr | Gateisolatoren für MOS-Feldeffekttransistoren Thomas Pompl |
| title_full_unstemmed | Gateisolatoren für MOS-Feldeffekttransistoren Thomas Pompl |
| title_short | Gateisolatoren für MOS-Feldeffekttransistoren |
| title_sort | gateisolatoren fur mos feldeffekttransistoren |
| topic | Siliciumdioxid (DE-588)4077447-8 gnd Gate-Oxid (DE-588)4269383-4 gnd MOS-FET (DE-588)4207266-9 gnd Titandioxid (DE-588)4185549-8 gnd |
| topic_facet | Siliciumdioxid Gate-Oxid MOS-FET Titandioxid Hochschulschrift |
| work_keys_str_mv | AT pomplthomas gateisolatorenfurmosfeldeffekttransistoren |