Gateisolatoren für MOS-Feldeffekttransistoren:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | German |
| Veröffentlicht: |
2000
|
| Schlagworte: | |
| Beschreibung: | München, Univ. der Bundeswehr, Diss., 2000 |
| Beschreibung: | VIII, 162 S. Ill., graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV013552650 | ||
| 003 | DE-604 | ||
| 005 | 20021112 | ||
| 007 | t | ||
| 008 | 010124s2000 ad|| m||| 00||| ger d | ||
| 016 | 7 | |a 96074035X |2 DE-101 | |
| 035 | |a (OCoLC)76254534 | ||
| 035 | |a (DE-599)BVBBV013552650 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a ger | |
| 049 | |a DE-91 |a DE-12 |a DE-29T |a DE-706 | ||
| 084 | |a ELT 321d |2 stub | ||
| 100 | 1 | |a Pompl, Thomas |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Gateisolatoren für MOS-Feldeffekttransistoren |c Thomas Pompl |
| 264 | 1 | |c 2000 | |
| 300 | |a VIII, 162 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a München, Univ. der Bundeswehr, Diss., 2000 | ||
| 650 | 0 | 7 | |a Siliciumdioxid |0 (DE-588)4077447-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Gate-Oxid |0 (DE-588)4269383-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Titandioxid |0 (DE-588)4185549-8 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Gate-Oxid |0 (DE-588)4269383-4 |D s |
| 689 | 0 | 1 | |a Siliciumdioxid |0 (DE-588)4077447-8 |D s |
| 689 | 0 | 2 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Gate-Oxid |0 (DE-588)4269383-4 |D s |
| 689 | 1 | 1 | |a Titandioxid |0 (DE-588)4185549-8 |D s |
| 689 | 1 | 2 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 1 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-009254658 | ||
Datensatz im Suchindex
| _version_ | 1804128350726258688 |
|---|---|
| any_adam_object | |
| author | Pompl, Thomas |
| author_facet | Pompl, Thomas |
| author_role | aut |
| author_sort | Pompl, Thomas |
| author_variant | t p tp |
| building | Verbundindex |
| bvnumber | BV013552650 |
| classification_tum | ELT 321d |
| ctrlnum | (OCoLC)76254534 (DE-599)BVBBV013552650 |
| discipline | Elektrotechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01446nam a2200433 c 4500</leader><controlfield tag="001">BV013552650</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20021112 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">010124s2000 ad|| m||| 00||| ger d</controlfield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">96074035X</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)76254534</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV013552650</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">ger</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-12</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-706</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 321d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Pompl, Thomas</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Gateisolatoren für MOS-Feldeffekttransistoren</subfield><subfield code="c">Thomas Pompl</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2000</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">VIII, 162 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">München, Univ. der Bundeswehr, Diss., 2000</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumdioxid</subfield><subfield code="0">(DE-588)4077447-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Gate-Oxid</subfield><subfield code="0">(DE-588)4269383-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Titandioxid</subfield><subfield code="0">(DE-588)4185549-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Gate-Oxid</subfield><subfield code="0">(DE-588)4269383-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Siliciumdioxid</subfield><subfield code="0">(DE-588)4077447-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Gate-Oxid</subfield><subfield code="0">(DE-588)4269383-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Titandioxid</subfield><subfield code="0">(DE-588)4185549-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="2"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-009254658</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV013552650 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:47:51Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009254658 |
| oclc_num | 76254534 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-12 DE-29T DE-706 |
| owner_facet | DE-91 DE-BY-TUM DE-12 DE-29T DE-706 |
| physical | VIII, 162 S. Ill., graph. Darst. |
| publishDate | 2000 |
| publishDateSearch | 2000 |
| publishDateSort | 2000 |
| record_format | marc |
| spelling | Pompl, Thomas Verfasser aut Gateisolatoren für MOS-Feldeffekttransistoren Thomas Pompl 2000 VIII, 162 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Univ. der Bundeswehr, Diss., 2000 Siliciumdioxid (DE-588)4077447-8 gnd rswk-swf Gate-Oxid (DE-588)4269383-4 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Titandioxid (DE-588)4185549-8 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Gate-Oxid (DE-588)4269383-4 s Siliciumdioxid (DE-588)4077447-8 s MOS-FET (DE-588)4207266-9 s DE-604 Titandioxid (DE-588)4185549-8 s |
| spellingShingle | Pompl, Thomas Gateisolatoren für MOS-Feldeffekttransistoren Siliciumdioxid (DE-588)4077447-8 gnd Gate-Oxid (DE-588)4269383-4 gnd MOS-FET (DE-588)4207266-9 gnd Titandioxid (DE-588)4185549-8 gnd |
| subject_GND | (DE-588)4077447-8 (DE-588)4269383-4 (DE-588)4207266-9 (DE-588)4185549-8 (DE-588)4113937-9 |
| title | Gateisolatoren für MOS-Feldeffekttransistoren |
| title_auth | Gateisolatoren für MOS-Feldeffekttransistoren |
| title_exact_search | Gateisolatoren für MOS-Feldeffekttransistoren |
| title_full | Gateisolatoren für MOS-Feldeffekttransistoren Thomas Pompl |
| title_fullStr | Gateisolatoren für MOS-Feldeffekttransistoren Thomas Pompl |
| title_full_unstemmed | Gateisolatoren für MOS-Feldeffekttransistoren Thomas Pompl |
| title_short | Gateisolatoren für MOS-Feldeffekttransistoren |
| title_sort | gateisolatoren fur mos feldeffekttransistoren |
| topic | Siliciumdioxid (DE-588)4077447-8 gnd Gate-Oxid (DE-588)4269383-4 gnd MOS-FET (DE-588)4207266-9 gnd Titandioxid (DE-588)4185549-8 gnd |
| topic_facet | Siliciumdioxid Gate-Oxid MOS-FET Titandioxid Hochschulschrift |
| work_keys_str_mv | AT pomplthomas gateisolatorenfurmosfeldeffekttransistoren |