Infrared applications of semiconductors III: symposium held November 29 - December 2, 1999, Boston, Massachusetts, USA
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Warrendale, Pa.
Materials Research Soc.
2000
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| Schriftenreihe: | Materials Research Society: Materials Research Society symposia proceedings
607 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XV, 535 S. Ill., graph. Darst. |
| ISBN: | 1558995153 |
Internformat
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| 245 | 1 | 0 | |a Infrared applications of semiconductors III |b symposium held November 29 - December 2, 1999, Boston, Massachusetts, USA |c ed.: M. Omar Manasreh ... |
| 264 | 1 | |a Warrendale, Pa. |b Materials Research Soc. |c 2000 | |
| 300 | |a XV, 535 S. |b Ill., graph. Darst. | ||
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| 490 | 1 | |a Materials Research Society: Materials Research Society symposia proceedings |v 607 | |
| 650 | 4 | |a Infrared detectors |x Materials |v Congresses | |
| 650 | 4 | |a Infrared technology |x Materials |v Congresses | |
| 650 | 4 | |a Quantum wells |v Congresses | |
| 650 | 4 | |a Semiconductors |v Congresses | |
| 650 | 4 | |a Superlattices as materials |v Congresses | |
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| adam_text | MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 607 INFRARED
APPLICATIONS OF SEMICONDUCTORS III SYMPOSIUM HELD NOVEMBER 29-DECEMBER
2, 1999, BOSTON, MASSACHUSETTS, U.S.A. EDITORS: M. OMAR MANASREH
UNIVERSITY OF NEW MEXICO ALBUQUERQUE, NEW MEXICO, U.S.A. BETHANIE J.H.
STADLER UNIVERSITY OF MINNESOTA MINNEAPOLIS, MINNESOTA, U.S.A. IAN
FERGUSON EMCORE CORPORATION SOMERSET, NEW JERSEY, U.S.A. YONG-HANG ZHANG
ARIZONA STATE UNIVERSITY TEMPE, ARIZONA, U.S.A. IMIRJSJ MATERIALS
RESEARCH SOCIETY WARRENDALE, PENNSYLVANIA CONTENTS PREFACE MATERIALS
RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ANTIMONIDE RELA TED MA TERIALS
AND DEVICES *PROGRESS IN ANTIMONIDE-BASED MID-IR LASERS 3 G.W. TURNER,
M.J. MANFRA, H.K. CHOI, A.K. GOYAL, S.C. BUCHTER, S.D. CALAWA, A.
SANCHEZ, AND D.L. SPEARS *PSEUDOPOTENTIAL METHODS FOR SUPERLATTICES:
APPLICATIONS TO MID-INFRARED SEMICONDUCTOR LASERS 11 G.C. DENTE AND M.L.
TILTON INN X SB!. X LIGHT EMITTING DIODES GROWN BY MBE 23 A.D. JOHNSON,
R.H. BENNETT, J. NEWEY, G.J. PRYCE, GM. WILLIAMS, T.M. BURKE, J.C.
JONES, AND A.M. KEIR ELECTRONIC STRUCTURE ENGINEERING OF THE LINEWIDTH
ENHANCEMENT FACTOR IN MID-INFRARED SEMICONDUCTOR LASER ACTIVE REGIONS 29
MICHAEL E. FLATTE, J.T. OLESBERG, AND T.F. BOGGESS RECENT PROGRESS OF
MID-IR TYPE-II INTERBAND CASCADE LASERS 35 CHIH-HSIANG LIN, W-Y. HWANG,
S.V. ZAITSEV, J. UM, C.H. KUO, A. DELANEY, JUN ZHENG, S.J. MURRY, A.
LIU, H.Q. LE, Y. MU, AND S.S. PEI *2.3-2.7|IM INGAASSB/ALGAASSB
BROAD-CONTACT AND SINGLE-MODE RIDGE-WAVEGUIDE SCH-QW DIODE LASERS
OPERATING IN CW REGIME AT ROOM TEMPERATURE 41 D. GARBUZOV AND H. LEE
ROOM TEMPERATURE CW OPERATION OF GALNASSB/ALGAASSB QUANTUM WELL LASERS
EMITTING IN THE 2.2 TO 2.3IXM WAVELENGTH RANGE 53 C. MERMELSTEIN, S.
SIMANOWSKI, M. MAYER, R. KIEFER, J. SCHMITZ, M. WALTHER, AND J. WAGNER
*INVITED PAPER *GROWTH OF INSB ON GAAS SUBSTRATES USING INALSB BUFFERS
FOR MAGNETIC FIELD SENSOR APPLICATIONS 59 R.M. BIEFELD AND J.D. PHILLIPS
*COMPOUND SEMICONDUCTOR APPLICATIONS FOR AUTOMOTIVE SENSORS 65 M.W.
PELCZYNSKI, J.J. HEREMANS, AND S. SCHWED ELECTRICAL CHARACTERIZATION OF
INAS/(GAIN)SB INFRARED SUPERLATTICE PHOTODIODES FOR THE 8 TO 12** RANGE
77 L. BUERKLE, F. FUCHS, R. KIEFER, W. PLETSCHEN, R.E. SAH, AND J.
SCHMITZ CORRELATION BETWEEN GALNASSB SURFACE STEP STRUCTURE AND PHASE
SEPARATION 83 C.A. WANG ADVANCED GASBFLNGAASSB/ALGAASSB 2-2.4**
PHOTOVOLTAIC DETECTORS 89 T.T. PIOTROWSKI, A. PIOTROWSKA, E. KAMINSKA,
K. GOLASZEWSKA, E. PAPIS, M. PISKORSKI, W. JUNG, J. KATCKI, A. KUDLA, J.
ADAMCZEWSKA, J. PIOTROWSKI, Z. NOWAK, Z. ORMAN, AND J. PAWLUCZYK
HIGH-TEMPERATURE W DIODE LASERS EMITTING AT *.*** 95 L.J. OLAFSEN, W.W.
BEWLEY, I. VURGAFTMAN, C.L. FELIX, E.H. AIFER, D.W. STOKES, J.R. MEYER,
H. LEE, R.J. MENNA, R.U. MARTINELLI, D.Z. GARBUZOV, M. MAIOROV, J.*
CONNOLLY, A.R. SUGG, AND G.H. OLSEN HIGH-POWER MID-IR INTERBAND CASCADE
LASERS BASED ON TYPE-II HETEROSTRUCTURES 101 RUI Q. YANG, J.D. BRUNO,
J.L. BRADSHAW, J.T. PHAM, AND D.E. WORTMAN TYPE-II INASTNGASB
SUPERLATTICES ON COMPLIANT GAAS SUBSTRATES 107 G.J. BROWN, K.
MAHALINGAM, A. SAXLER, R. LINVILLE, F. SZMULOWICZ, ML. SEAFORD, D.H.
TOMICH, CHIH-HSIANG LIN, C.H. KUO, AND W.Y. HWANG INNOVA TIVE DEVICES
*DC TO 65 GHZ WIDE BANDWIDTH INGAAS PHOTODIODES AND PHOTORECEIVERS 115
ABHAY M. JOSHI * INVITED PAPER *PROGRESS IN MONOLITHIC PHOTONIC
INTEGRATION USING QUANTUM WELL SHAPE MODIFICATION ENHANCED BY ION
IMPLANTATION EMIL S. KOTELES 129 ALGAAS/GAAS DISTRIBUTED FEEDBACK
QUANTUM CASCADE LASERS 141 W. SCHRENK, N. FINGER, S. GIANORDOLI, G.
STRASSER, AND E. GORNIK MID-INFRARED PHOTODETECTOR USING SELF-ASSEMBLED
INAS QUANTUM DOTS EMBEDDED IN MODULATION-DOPED GAAS QUANTUM WELLS 147
SEUNG-WOONG LEE, KAZUHIKO HIRAKAWA, AND YOZO SHIMADA TIME-RESOLVED
PHOTOLUMINESCENCE STUDIES OF IN X GAI- X ASI. Y N Y 153 M. SMITH, RA.
MAIR, J.Y. LIN, H.X. JIANG, E.D. JONES, A.A. ALLERMAN, AND S.R. KURTZ
*EXTERNAL CAVITY MID-INFRARED SEMICONDUCTOR LASERS 159 H.Q. LE, C-H.
LIN, S.J. MURRY, J. ZHENG, AND S-S. PEI THE LONGEST WAVELENGTH OPO
PUMPED BY A L|IM LASER 165 K.L. VODOPYANOV, J. MAFFETONE, I. ZWIEBACK,
AND W. RUDERMAN PERFORMANCE AND SPECTRAL RESPONSE OF FAR-INFRARED PBI_ X
SN X TE(IN) PHOTODETECTORS 169 I. IVANCHIK, D. KHOKHLOV, J. PIPHER, N.
RAINES, AND D. WATSON TUNED INFRARED EMISSION FROM
LITHOGRAPHICALLY-DEFINED SILICON SURFACE STRUCTURES 175 JAMES T. DALY,
EDWARD A. JOHNSON, WILLIAM A. STEVENSON, ANTON C. GREENWALD, JOHN A.
WOLLAM, THOMAS GEORGE, AND ERIC W. JONES IV-VI COMPOUND SEMICONDUCTOR
MID-INFRARED VERTICAL CAVITY SURFACE EMITTING LASERS GROWN BY MBE 181 Z.
SHI, G. XU, P.J. MCCANN, X.M. FANG, N. DAI, W.W. BEWLEY, C.L. FELIX, I.
VURGAFTMAN, AND J.R. MEYER * INVITED PAPER INFRARED PHOTODETECTORS
*TEMPERATURE DEPENDENCE OF PHOTORESPONSE IN P-TYPE GAAS/ALGAAS MULTIPLE
QUANTUM WELLS: THEORY AND EXPERIMENT 187 F. SZMULOWICZ, A. SHEN, H.C.
LIU, G.J. BROWN, Z.R. WASILEWSKI, AND M. BUCHANAN LOW FREQUENCY NOISE
AND RANDOM TELEGRAPH SIGNAL IN A MULTIPLE QUANTUM WELL INFRARED
PHOTODETECTOR 199 L. KORE AND G. BOSMAN AUGER SUPPRESSION IN AND NOISE
PERFORMANCE OF HOT HGCDTE IR DETECTORS 205 F. BENJAMINSEN, A.D. VAN
RHEENEN, AND X-Y. CHEN NOVEL DIFFRACTION PATTERN FOR OPTICAL COUPLING IN
QWIP 211 PRAFULLA MASALKAR, HIRONORI NISHINO, YUSUKE MATSUKURA, HITOSHI
TANAKA, KOUSAKU YAMAMOTO, YOSHIHIRO MIYAMOTO, AND TOSHIO FUJII THERMAL
ANNEALING RECOVERY OF INTERSUBBAND TRANSITION IN PROTON-IRRADIATED
GAAS/ALO.3GAO.7AS MULTIPLE QUANTUM WELLS 217 H.S. GINGRICH, * MORATH,
M.O. MANASREH, P. BALLET, J.B. SMATHERS, G.J. SALAMO, AND C. JAGADISH
MECHANISMS OF INTERSUBBAND TRANSITION IN N-TYPE III-V QUANTUM WELL
SUPERLATTICE AND IMPROVEMENT ON ABSORPTION FOR ** POLARIZED FIELD 223
C.W. CHEAH, G. KARUNASIRI, AND L.S. TAN HIGH-RESOLUTION X-RAY
DIFFRACTION ANALYSIS OF P-TYPE STRAINED INGAAS/ALGAAS MULTIPLE QUANTUM
WELL STRUCTURES 229 W. SHI, D.H. ZHANG, T. OSOTCHAN, P.H. ZHANG, S.F.
YOON, AND S. SWAMINATHAN EFFECT OF LAYER RELAXATION ON THE INTERNAL
PHOTOEMISSION IN PT/SI]. X GE X SCHOTTKY BARRIER TYPE INFRARED DETECTORS
235 B. ASIAN, R. TURAN, O. NUR, M. KARLSTEEN, AND M. WILLANDER DEFECTS
IN CDTE-BASED PHOTODETECTORS 241 V. VALDNA * INVITED PAPER VIII INFRARED
PHOTOSENSITIVITY DUE TO THE YB-INDUCED DEFECT STATES IN PB BX GE X TE
ALLOYS 247 E.P. SKIPETROV, N.A. CHERNOVA, E.A. ZVEREVA, AND E.I. SLYN KO
INNO VA TIVE MA TERIALS, CHARA CTERIZA TION AND DEVICES *STRAINED SIGE
MATERIALS FOR HIGH QUANTUM EFFICIENCY PHOTODIODES AT X = 1.3 TO 1.5U,M
255 L.M. GIOVANE, H-C. LUAN, E.A. FITZGERALD, AND L.C. KIMERLING
*PHOTOCONDUCTIVE PROPERTIES OF GAASI_ X N X DOUBLE HETEROSTRUCTURES AS A
FUNCTION OF EXCITATION WAVELENGTH 265 R.K. AHRENKIEL, A. MASCARENHAS,
S.W. JOHNSTON, Y. ZHANG, D.J. FRIEDMAN, AND S.M. VERNON ELECTRONIC
STRUCTURES OF SHALLOW ACCEPTORS CONFINED IN SI/SIGE QUANTUM WELL
STRUCTURES 273 Q.X. ZHAO AND M. WILLANDER GERMANIUM PHOTODETECTORS FOR
SILICON MICROPHOTONICS BY DIRECT EPITAXY ON SILICON 279 HSIN-CHIAO LUAN,
DESMOND R. LIM, LORENZO COLACE, GIANLOREZO MASINI, GAETANO ASSANTO,
KAZUMI WADA, AND LIONEL * KIMERLING INVESTIGATION OF NEW GEOMETRIES FOR
HIGH DUTY CYCLE FAR-INFRARED P-TYPE GERMANIUM LASERS 285 DANIELLE R.
CHAMBERLIN, ERIK BRUENDERMANN, AND EUGENE E. HALLER ELECTRONIC BANDGAP
AND REFRACTIVE INDEX DISPERSION OF SINGLE CRYSTALLINE EPITAXIAL ZNGEN 2
291 L.D. ZHU, P.E. NORRIS, AND L.O. BOUTHILLETTE BANDGAP VARIATION AND
MISCIBILITY GAPS OF THALLIUM-BASED PSEUDO-BINARY ALLOYS 297 A-B. CHEN
AND J. PIAO INVITED PAPER THE GROWTH OF ****************** MID-INFRARED
EMITTERS BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION 303 R.M. BIEFELD,
J.D. PHILLIPS, AND S.R. KURTZ EMISSIVITY COMPENSATED PYROMETRY OF THE
SUBSTRATE SURFACE DURING MOVPE GROWTH OF IN X GAI_ X ASI_ Y P Y FLNP
MATERIALS IN ROTATING DISC REACTORS 309 J. RAMER, *. PATEL, A. PATEL, V.
BOGUSLAVSKIY, AND A. GURARY INFRARED-PHOTOVOLTAIC RESPONSES OF ION-BEAM
SYNTHESIZED SS-FESI 2 /N-SI HETEROJUNCTIONS 315 YOSHIHITO MAEDA, KENJI
UMEZAWA, KIYOSHI MIYAKE, AND KENYA OHASHI SII_ X GE X BULK CRYSTALS
GROWTH AND PN JUNCTION FORMATION BY DIFFUSING PHOSPHORUS 321 S. KATO, T.
HORIKOSHI, T. OHKUBO, T. IIDA, AND Y. TAKANO POSITIVE AND NEGATIVE
PHOTOCONDUCTIVITY IN LEAD TELLURIDE DOPED WITH GALLIUM EPITAXIAL FILMS
327 B.A. AKIMOV, V.A. BOGOYAVLENSKIY, L.I. RYABOVA, AND V.N. VASIL KOV
IMPURITY-INDUCED DEFECT STATES IN PBI_ X GE X TE ALLOYS DOPED WITH
GALLIUM 333 E.P. SKIPETROV, E.A. ZVEREVA, V.V. BELOUSOV, AND L.A.
SKIPETROVA PBEUTE/PBTE MULTI-QUANTUM WELLS: STRUCTURAL AND OPTICAL
PROPERTIES 339 E. ABRAMOF, P.H.O. RAPPL, A.Y. UETA, P. MOTISUKE, AND
S.O. FERREIRA METAL-ORGANIC CHEMICAL VAPOR DEPOSITION OF ZN-IN-SN-O AND
GA-IN-SN-O TRANSPARENT CONDUCTING OXIDE THIN FILMS 345 A. WANG, N.L.
EDLEMAN, J.R. BABCOCK, T.J. MARKS, M.A. LANE, P.W. BRAZIS, AND CR.
KANNEWURF THE DEVELOPMENT OF INFRARED PHOTOSENSITIVE MATERIAL BASED ON
POLYCRYSTALLINE PBS FILMS 353 C. ABARBANEL, R. SHNECK, Z. DASHEVSKY, AND
S. ROTMAN NONLINEAR OPTICAL MATERIALS *DEVELOPMENT OF LARGE HIGH-QUALITY
CHALCOPYRITE SINGLE CRYSTALS FOR NONLINEAR OPTICAL APPLICATIONS 361 W.
RUDERMAN AND I. ZWIEBACK NATIVE DEFECT CHARACTERIZATION IN ZNGEP2 373 A.
HOFFMANN, H. BORN, A. NAESER, W. GEHLHOFF, J. MAFFETONE, D. PERLOV, W.
RUDERMAN, I. ZWIEBACK, N. DIETZ, AND K.J. BACHMANN PHOTOINDUCED CHANGES
IN THE CHARGE STATES OF NATIVE DONORS AND ACCEPTORS IN ZNGEP2 379 K.T.
STEVENS, S.D. SETZLER, P.G. SCHUNEMANN, T.M. POLLAK, N.C. GILES, AND
L.E. HALLIBURTON *ELECTRONIC STRUCTURE AND DERIVED LINEAR AND NONLINEAR
OPTICAL PROPERTIES OF CHALCOPYRITES 385 WALTER R.L. LAMBRECHT, SERGEY N.
RASHKEEV, SUKIT LIMPIJUMNONG, AND BENJAMIN SEGALL ANISOTROPY OF OPTICAL
AND ELECTRON TRANSPORT PROPERTIES OF ATOMIC ORDERING IN CDGEAS 2 397
B.H. BAIRAMOV, N. FERNELIUS, G. IRMER, J. MONECKE, I.K. POLUSHINA, R.
PANDEY, V.YU. RUD , YU.V. RUD , P.G. SCHUNEMANN, AND M.C. OHMER THERMAL
ADMITTANCE STUDIES OF ELECTRON-IRRADIATED CDGEAS2 403 S.R. SMITH, A.O.
EVWARAYE, M.C. OHMER, P.J. DREVINSKY, AND D.F. BLISS EFFECT OF FAST
ELECTRON IRRADIATION ON ELECTRICAL AND OPTICAL PROPERTIES OF CDGEAS 2
AND ZNGEP 2 409 I. ZWIEBACK, J. MAFFETONE, D. PERLOV, J. HARPER, W.
RUDERMAN, K. BACHMANN, AND N. DIETZ PHOTORESPONSE OF TELLURIUM RICH TE X
SE(I_ X ) NONLINEAR OPTICAL SEMICONDUCTORS 415 G.J. BROWN, CINDI L.
DENNIS, M.C. OHMER, AND ARNOLD BURGER SECOND-HARMONIC GENERATION IN
ORIENTED CDSE-NANOCRYSTAL-DOPED INDIUM TIN OXIDE FILM AND ITS
APPLICATION TO AN INFRARED DETECTOR 421 A. NARAZAKI, T. HIRANO, J.
SASAI, K. TANAKA, AND K. HIRAO * INVITED PAPER TEMPERATURE DEPENDENT
HALL MEASUREMENTS ON CDGEAS2 427 A.J. PTAK, S. JAIN, K.T. STEVENS, *.*.
MYERS, P.G. SCHUNEMANN, S.D. SETZLER, AND T.M. POLLAK REDUCTION OF THE
OPTICAL ABSORPTION OF ZINC GERMANIUM PHOSPHIDE VIA POST-GROWTH THERMAL
ANNEAL 433 HOW-GHEE ANG, LENG-LENG CHNG, YIEW-WANG LEE, COLIN J. FLYNN,
PHIL * SMITH, AND ANTHONY W. VERE EVIDENCE OF HIGH ELECTRON MOBILITY IN
CDGEAS2 SINGLE CRYSTALS 439 V.YU. RUD , YU.V. RUD , R. PANDEY, AND M.C.
OHMER PHOTOLUMINESCENCE AND EPR OF PHOSPHORUS VACANCIES IN ZNGEP2 445 M.
MOLDOVAN, K.T. STEVENS, L.E. HALLIBURTON, P.G. SCHUNEMANN, T.M. POLLAK,
S.D. SETZLER, AND N.C. GILES REFRACTIVE INDEX MEASUREMENTS AND NEW
SELLMEIR COEFFICIENTS OF ZINC GERMANIUM PHOSPHIDE FROM 2-9 MICRONS WITH
IMPLICATIONS FOR PHASE MATCHING IN OPTICAL PARAMETRIC OSCILLATORS 451
DAVID E. ZELMON, ELIZABETH A. HANNING, AND PETER SCHUNEMANN ZNGEP2 :
OPTICAL TRANSPARENCY AND MELT COMPOSITION 457 G.A. VEROZUBOVA, A.I.
GRIBENYUKOV, A.W. VERE, * FLYNN, AND Y.F. IVANOV ANALYSIS OF CR-DOPED
CDGEAS2 USING THERMAL ADMITTANCE SPECTROSCOPY 465 S.R. SMITH, A.O.
EVWARAYE, M.C. OHMER, A.W. SAXLER, J.T. GOLDSTEIN, J. SOLOMON, P.G.
SCHUNEMANN, AND T.M. POLLAK MODELING OF THE PROPERTIES OF DOPANTS IN THE
NLO SEMICONDUCTOR CDGEAS 2 471 RAVINDRA PANDEY, MELVIN * OHMER, A.
COSTALES, AND J.M. RECIO *INVITED PAPER INTERDIFFUSION IN QUANTUM WELLS
*QUANTUM WELL INTERMIXING USING SPUTTERED SILICA FOR PHOTONIC INTEGRATED
CIRCUITS OPERATING AROUND 1550 NM 479 JOHN H. MARSH, A. CATRINA BRYCE,
OLEK P. KOWALSKI, STEWART D. MCDOUGALL, MAOLONG KE, BOCANG QIU, AND
YAHONG QIAN INFLUENCE OF SIO X CAPPING LAYER QUALITY ON IMPURITY-FREE
INTERDIFFUSION IN GAAS/ALGAAS QUANTUM WELLS 491 P.N.K. DEENAPANRAY, H.H.
TAN, AND C. JAGADISH DEGRADATION OF INTERSUBBAND TRANSITIONS IN ELECTRON
IRRADIATED GAAS/ALGAAS MULTIPLE QUANTUM WELLS WITH SUPERLATTICE BARRIERS
503 C.P. MORATH, MO. MANASREH, H.S. GINGRICH, H.J. VON BARDELEBEN, P.
BALLET, J.B. SMATHERS, AND G.J. SALAMO OPTICAL DIAGNOSTICS OF
MICROSTRUCTURES FABRICATED USING QUANTUM WELL INTERMIXING 509 A. SAHER
HELMY, A.C. BRYCE, C.N. IRONSIDE, J.S. AITCHISON, J.H. MARSH, AND S.G.
AYLING CONTROL OF THE INTERMIXING OF INGAAS/INGAASP QUANTUM WELL IN
IMPURITY FREE VACANCY DISORDERING BY CHANGING NH3 FLOW RATE DURING THE
GROWTH OF SIN X CAPPING LAYER 515 W.J. CHOI, H.T. YI, D.H. WOO, S. LEE,
S.H. KIM, K.N. KANG, AND J. CHO THEORETICAL AND EXPERIMENTAL
INVESTIGATION OF DISORDERING EFFECTS ON PHOTOLUMINESCENCE SPECTRA OF
INGAASANGAASP QUANTUM WELLS 519 J.C. YI, W.J. CHOI, S. LEE, D.H. WOO,
AND S.H. KIM PHOTOLUMINESCENCE MEASUREMENTS IN INTERBAND TRANSITION IN
FAST NEUTRON IRRADIATED INO.07GAO.93AS/ALO.4GAO.6AS MULTIPLE QUANTUM
WELLS 525 M.O. MANASREH AND S. SUBRAMANIAN AUTHOR INDEX 529 SUBJECT
INDEX 533 INVITED PAPER
|
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| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1999 Boston Mass. gnd-content |
| genre_facet | Konferenzschrift 1999 Boston Mass. |
| id | DE-604.BV013551436 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:47:50Z |
| institution | BVB |
| isbn | 1558995153 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009253575 |
| oclc_num | 43555300 |
| open_access_boolean | |
| owner | DE-703 |
| owner_facet | DE-703 |
| physical | XV, 535 S. Ill., graph. Darst. |
| publishDate | 2000 |
| publishDateSearch | 2000 |
| publishDateSort | 2000 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | Infrared applications of semiconductors III symposium held November 29 - December 2, 1999, Boston, Massachusetts, USA ed.: M. Omar Manasreh ... Warrendale, Pa. Materials Research Soc. 2000 XV, 535 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 607 Infrared detectors Materials Congresses Infrared technology Materials Congresses Quantum wells Congresses Semiconductors Congresses Superlattices as materials Congresses Infrarottechnik (DE-588)4026942-5 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1999 Boston Mass. gnd-content Halbleiter (DE-588)4022993-2 s Infrarottechnik (DE-588)4026942-5 s DE-604 Manasreh, Mahmoud Omar Sonstige oth Materials Research Society: Materials Research Society symposia proceedings 607 (DE-604)BV001899105 607 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009253575&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Infrared applications of semiconductors III symposium held November 29 - December 2, 1999, Boston, Massachusetts, USA Materials Research Society: Materials Research Society symposia proceedings Infrared detectors Materials Congresses Infrared technology Materials Congresses Quantum wells Congresses Semiconductors Congresses Superlattices as materials Congresses Infrarottechnik (DE-588)4026942-5 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4026942-5 (DE-588)4022993-2 (DE-588)1071861417 |
| title | Infrared applications of semiconductors III symposium held November 29 - December 2, 1999, Boston, Massachusetts, USA |
| title_auth | Infrared applications of semiconductors III symposium held November 29 - December 2, 1999, Boston, Massachusetts, USA |
| title_exact_search | Infrared applications of semiconductors III symposium held November 29 - December 2, 1999, Boston, Massachusetts, USA |
| title_full | Infrared applications of semiconductors III symposium held November 29 - December 2, 1999, Boston, Massachusetts, USA ed.: M. Omar Manasreh ... |
| title_fullStr | Infrared applications of semiconductors III symposium held November 29 - December 2, 1999, Boston, Massachusetts, USA ed.: M. Omar Manasreh ... |
| title_full_unstemmed | Infrared applications of semiconductors III symposium held November 29 - December 2, 1999, Boston, Massachusetts, USA ed.: M. Omar Manasreh ... |
| title_short | Infrared applications of semiconductors III |
| title_sort | infrared applications of semiconductors iii symposium held november 29 december 2 1999 boston massachusetts usa |
| title_sub | symposium held November 29 - December 2, 1999, Boston, Massachusetts, USA |
| topic | Infrared detectors Materials Congresses Infrared technology Materials Congresses Quantum wells Congresses Semiconductors Congresses Superlattices as materials Congresses Infrarottechnik (DE-588)4026942-5 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Infrared detectors Materials Congresses Infrared technology Materials Congresses Quantum wells Congresses Semiconductors Congresses Superlattices as materials Congresses Infrarottechnik Halbleiter Konferenzschrift 1999 Boston Mass. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009253575&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT manasrehmahmoudomar infraredapplicationsofsemiconductorsiiisymposiumheldnovember29december21999bostonmassachusettsusa |