Epitaxy: physical principles and technical implementation
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2004
|
| Schriftenreihe: | Springer series in materials science
62 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XV, 522 S. Ill., graph. Darst. |
| ISBN: | 3540678212 |
Internformat
MARC
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| 100 | 1 | |a Herman, Marian A. |d 1936-2015 |e Verfasser |0 (DE-588)111000203 |4 aut | |
| 245 | 1 | 0 | |a Epitaxy |b physical principles and technical implementation |c Marian A. Herman ; Wolfgang Richter ; Helmut Sitter |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2004 | |
| 300 | |a XV, 522 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
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| 490 | 1 | |a Springer series in materials science |v 62 | |
| 650 | 4 | |a Langmuir-Blodgett, Couches de - Technique | |
| 650 | 4 | |a Épitaxie | |
| 650 | 4 | |a Epitaxy | |
| 650 | 4 | |a Thin films, Multilayered |x Technique | |
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| 700 | 1 | |a Sitter, Helmut |e Verfasser |4 aut | |
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Datensatz im Suchindex
| _version_ | 1804128331670487040 |
|---|---|
| adam_text | Contents
Part I. Basic Concepts
1. Introduction 3
1.1 Epitaxial Crystallization Process 3
1.2 Growth Modes in Epitaxy 6
2. Homo and Heteroepitaxial Crystallization Phenomena ... 11
2.1 Nucleation and Epitaxy 11
2.2 Defects in Epitaxial Layers 15
2.2.1 Point Defects 16
2.2.2 Dislocations 16
2.2.3 Stacking Faults 18
2.2.4 Twins 19
2.2.5 Antiphase Domain Boundaries 21
2.2.6 Superdislocations 22
2.2.7 Misfit Dislocations 23
2.3 Peculiarities of Epitaxially Grown Layers 25
2.3.1 Homoepitaxial Layers 25
2.3.2 Heteroepitaxial Layers 28
3. Application Areas of Epitaxially Grown Layer Structures . 35
3.1 Low Dimensional Heterostructures 35
3.2 Device Structures with Epitaxial Layers 37
Part II. Technical Implementation
4. Solid Phase Epitaxy 45
4.1 Technological Procedures 46
4.1.1 Formation of the Amorphous Phase 48
4.1.2 Programmed Heating of the a/c System 51
4.2 Measurement of the Growth Rate 52
4.3 Application Areas 54
4.3.1 Growth of Highly Doped Epilayers 54
4.3.2 Growth of Buffer Layers 58
XII Contents
5. Liquid Phase Epitaxy 63
5.1 Standard Techniques 64
5.1.1 Transport Processes 66
5.1.2 Two Dimensional Effects 68
5.1.3 LPE of Compound Semiconductors 69
5.2 Liquid Phase Electroepitaxy 73
5.3 The LPEE Process and Related Phenomena 74
5.3.1 Growth Kinetics in LPEE of GaAs 76
5.3.2 The Peltier Effect
at the GaAs substrate/(Ga As) Solution Interface. ... 77
6. Vapor Phase Epitaxy 81
6.1 Physical Vapor Deposition 84
6.1.1 Evaporation Rates 84
6.1.2 Langmuir and Knudsen Modes of Evaporation 85
6.1.3 Principles of MBE 87
6.1.4 Sputtering 88
6.1.5 Film Deposition in a Glow Discharge 89
6.1.6 Sputtering and Epitaxy 93
6.1.7 Pulsed Laser Deposition 97
6.2 Chemical Vapor Deposition 102
6.2.1 Principles of CVD Processes 102
6.2.2 Mass Transport and Heat Transfer in CVD Reactors . . 109
6.2.3 Principles of the MOVPE Process 120
6.3 Atomic Layer Epitaxy 121
6.3.1 Principles of the ALE Process 121
6.3.2 Growth Systems for CVD like ALE 126
6.3.3 Specific Features and Application Areas 127
7. Molecular Beam Epitaxy 131
7.1 Solid Source MBE 133
7.1.1 Basic Phenomena 135
7.1.2 Evaporation Sources 140
7.2 Gas Source MBE 146
7.2.1 Beam Sources Used in GSMBE 147
7.2.2 Metal Organic MBE 150
7.2.3 Hydride Source MBE 152
7.3 Growth Techniques Using Modulated Beams 155
7.3.1 Ultrahigh Vacuum Atomic Layer Epitaxy 156
7.3.2 Migration Enhanced Epitaxy 159
7.3.3 Molecular Layer Epitaxy 161
7.4 Externally Assisted MBE 164
7.4.1 Irradiation with UV Light in MLE of GaAs 164
7.4.2 Ion Assisted Doping in Si MBE 165
Contents XIII
7.4.3 Plasma Assisted MBE Growth of GaN
and Related Compounds 169
8. Metal Organic Vapor Phase Epitaxy 171
8.1 Basic Concepts 171
8.2 Growth Equipment 176
8.2.1 Commercial MOVPE Reactors 176
8.2.2 Gas Vapor Delivery Systems in MOVPE 181
8.3 Precursor Materials 185
8.4 Precursor Decomposition and Reactions 190
8.5 Control of Surfaces Before and During Growth 194
8.6 Nonthermal MOVPE Techniques 196
8.6.1 Photo MOVPE 197
8.6.2 Plasma MOVPE 198
8.7 Safety Aspects of MOVPE 198
Part III. In situ Analysis of the Growth Processes
9. In situ Analysis of Species and Transport 203
9.1 Identification of the Growth Relevant Species 203
9.1.1 Mass Spectrometry 204
9.1.2 Optical Identification of Species 208
9.2 Mass Transport to the Surface 216
9.2.1 Measurement of Velocities 217
9.2.2 Measurement of Temperature 220
10. In situ Surface Analysis 225
10.1 Scanning Microscopes 226
10.2 Diffractions Techniques 228
10.2.1 Diffraction 229
10.2.2 RHEED 231
10.2.3 GIXS 232
10.3 Reflectance Based Optical Techniques 234
10.3.1 Reflectance of Polarized Light 236
10.3.2 Reflectance Anisotropy Spectroscopy (RAS) . . 240
10.3.3 Ellipsometry 247
10.3.4 P polarized Reflectance Spectroscopy (PRS)
Surface Photoabsorption (SPA) 253
10.3.5 Reflectometry 255
10.4 Other Optical Techniques 256
10.4.1 Laser Light Scattering (LLS) 256
10.4.2 Second Harmonic Generation (SHG) 258
10.4.3 Raman Spectroscopy 259
10.4.4 Infrared Reflection Absorption Spectroscopy (IRRAS). 263
XIV Contents
Part IV. Physics of Epitaxy
11. Thermodynamic Aspects 267
11.1 The Driving Force for Epitaxy 268
11.1.1 Basic Concepts and Terminology of Thermodynamics . 268
11.1.2 The Interphase Exchange Processes 270
11.2 Mass Transport Phenomena 271
11.2.1 Basic Equations Describing Mass Transport
in VPE Systems 271
11.2.2 The Boundary Layer at the Substrate Surface 273
11.2.3 Effusion from Solid Sources in MBE 276
11.3 Phase Equilibria and Phase Transitions 284
11.3.1 Ideal and Regular Solutions 284
11.3.2 The Liquid Solid Phase Diagram 288
11.3.3 Phase Transitions in Epitaxy 292
11.4 Interface Formation in Epitaxy 296
11.4.1 The Interface Energy 296
11.4.2 Initial Stages of Epitaxial Growth 299
11.5 Self Organization Processes 302
11.5.1 Strain Induced Self Ordering; Quantum Dots 304
11.5.2 Strain Induced Lateral Ordering; Quantum Wires .... 311
11.6 Morphological Stability in Epitaxy 316
11.6.1 The Mullins Sekerka Theory 316
11.6.2 Morphological Stability in LPE 318
12. Atomistic Aspects 321
12.1 Incorporating of Adatoms into a Crystal Lattice 321
12.1.1 Kossel s Model of Crystallization 321
12.1.2 Lattice Gas Models 324
12.1.3 Stochastic Model of Epitaxy 327
12.2 Adsorption Desorption Kinetics 332
12.2.1 Adsorption Isotherms; Phenomenological Treatment .. 332
12.2.2 Adsorption Isotherms; Statistical Treatment 334
12.2.3 Thermal Desorption Kinetics 337
12.3 Step Advancement and Bunching Processes 344
12.3.1 Growth Conditions on Vicinal Surfaces 344
12.3.2 Step Advancement Kinetics 345
12.3.3 Mass Transport Between Steps; Step Bunching 348
13. Quantum Mechanical Aspects 351
13.1 Framework of Quantum Mechanics 351
13.1.1 Interatomic Bonds in Small Molecules 355
13.1.2 Chemical Bonds in Solid Crystals 358
13.1.3 Bonding at Surfaces 360
Contents XV
13.2 Surface Structure 365
13.2.1 Physical Principles 365
13.2.2 Reconstructed Surfaces; Theoretical Methodology 368
13.2.3 Reconstructed Surfaces; Materials Related Examples .. 372
13.3 Substrate Surface Structure and the Epitaxial Growth Processes378
13.3.1 GaAs(OOl) Homoepitaxy 378
13.3.2 Quantum Dots Grown on Surfaces
of Different Reconstruction 380
13.3.3 Ordering in InGaP 385
Part V. Heteroepitaxy
14. Heteroepitaxy; Growth Phenomena 389
14.1 Nearly Lattice Matched Heterostructures 389
14.1.1 Critical Thickness; Theoretical Treatment 391
14.1.2 Critical Thickness; Experimental Data 394
14.1.3 Epitaxy on Compliant Substrates 396
14.1.4 Highly Strained Heterostructures 401
14.1.5 Surfactant Mediated Heteroepitaxy 402
14.1.6 Heteroepitaxial Lateral Overgrowth 405
14.1.7 Hard Heteroepitaxy 413
14.2 Artificial Epitaxy (Graphoepitaxy) 415
14.2.1 General Principles of Graphoepitaxy 416
14.2.2 Growth Mechanisms in Graphoepitaxy 418
15. Material Related Problems of Heteroepitaxy 423
15.1 Material Systems Crystallizing
by the Fundamental Growth Modes 423
15.1.1 Growth by the Island Mode 424
15.1.2 Growth by the Layer by Layer Mode 425
15.1.3 Growth by the Layer Plus Island Mode 426
15.2 Peculiarities of Heteroepitaxy of Selected Material Groups ... 429
15.2.1 Group III Nitrides 430
15.2.2 IV VI Compound Semiconductors 438
15.2.3 Organic Semiconductors 452
16. Closing Remarks 465
References 467
List of Abbreviations 500
List of Metalorganic Precursors 505
Index 507
|
| any_adam_object | 1 |
| author | Herman, Marian A. 1936-2015 Richter, Wolfgang Sitter, Helmut |
| author_GND | (DE-588)111000203 |
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| dewey-ones | 621 - Applied physics |
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| dewey-search | 621.3815/2 |
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| id | DE-604.BV013536446 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:47:33Z |
| institution | BVB |
| isbn | 3540678212 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009241151 |
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| spelling | Herman, Marian A. 1936-2015 Verfasser (DE-588)111000203 aut Epitaxy physical principles and technical implementation Marian A. Herman ; Wolfgang Richter ; Helmut Sitter Berlin [u.a.] Springer 2004 XV, 522 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 62 Langmuir-Blodgett, Couches de - Technique Épitaxie Epitaxy Thin films, Multilayered Technique Festkörper (DE-588)4016918-2 gnd rswk-swf Epitaxie (DE-588)4152545-0 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Festkörper (DE-588)4016918-2 s Dünne Schicht (DE-588)4136925-7 s Epitaxie (DE-588)4152545-0 s DE-604 Richter, Wolfgang Verfasser aut Sitter, Helmut Verfasser aut Springer series in materials science 62 (DE-604)BV000683335 62 HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009241151&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Herman, Marian A. 1936-2015 Richter, Wolfgang Sitter, Helmut Epitaxy physical principles and technical implementation Springer series in materials science Langmuir-Blodgett, Couches de - Technique Épitaxie Epitaxy Thin films, Multilayered Technique Festkörper (DE-588)4016918-2 gnd Epitaxie (DE-588)4152545-0 gnd Dünne Schicht (DE-588)4136925-7 gnd |
| subject_GND | (DE-588)4016918-2 (DE-588)4152545-0 (DE-588)4136925-7 |
| title | Epitaxy physical principles and technical implementation |
| title_auth | Epitaxy physical principles and technical implementation |
| title_exact_search | Epitaxy physical principles and technical implementation |
| title_full | Epitaxy physical principles and technical implementation Marian A. Herman ; Wolfgang Richter ; Helmut Sitter |
| title_fullStr | Epitaxy physical principles and technical implementation Marian A. Herman ; Wolfgang Richter ; Helmut Sitter |
| title_full_unstemmed | Epitaxy physical principles and technical implementation Marian A. Herman ; Wolfgang Richter ; Helmut Sitter |
| title_short | Epitaxy |
| title_sort | epitaxy physical principles and technical implementation |
| title_sub | physical principles and technical implementation |
| topic | Langmuir-Blodgett, Couches de - Technique Épitaxie Epitaxy Thin films, Multilayered Technique Festkörper (DE-588)4016918-2 gnd Epitaxie (DE-588)4152545-0 gnd Dünne Schicht (DE-588)4136925-7 gnd |
| topic_facet | Langmuir-Blodgett, Couches de - Technique Épitaxie Epitaxy Thin films, Multilayered Technique Festkörper Epitaxie Dünne Schicht |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009241151&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000683335 |
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