Herstellung und Charakterisierung von AlGaN-GaN-Transistoren:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | German |
| Veröffentlicht: |
Garching
Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V.
2000
|
| Ausgabe: | 1. Aufl. |
| Schriftenreihe: | Selected topics of semiconductor physics and technology
28 |
| Schlagworte: | |
| Beschreibung: | Zugl.: München, Techn. Univ., Diss., 2000 |
| Beschreibung: | III, III, 196 S. Ill., graph. Darst. |
| ISBN: | 3932749286 |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV013422164 | ||
| 003 | DE-604 | ||
| 005 | 20020312 | ||
| 007 | t | ||
| 008 | 001107s2000 ad|| m||| 00||| ger d | ||
| 020 | |a 3932749286 |9 3-932749-28-6 | ||
| 035 | |a (OCoLC)643115339 | ||
| 035 | |a (DE-599)BVBBV013422164 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a ger | |
| 049 | |a DE-91 |a DE-12 |a DE-355 | ||
| 084 | |a ELT 321d |2 stub | ||
| 084 | |a PHY 693d |2 stub | ||
| 100 | 1 | |a Dimitrov, Roman |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Herstellung und Charakterisierung von AlGaN-GaN-Transistoren |c Roman Dimitrov |
| 250 | |a 1. Aufl. | ||
| 264 | 1 | |a Garching |b Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V. |c 2000 | |
| 300 | |a III, III, 196 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Selected topics of semiconductor physics and technology |v 28 | |
| 500 | |a Zugl.: München, Techn. Univ., Diss., 2000 | ||
| 650 | 0 | 7 | |a Aluminiumnitrid |0 (DE-588)4226770-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterostruktur |0 (DE-588)4123378-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Mischkristall |0 (DE-588)4170112-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumnitrid |0 (DE-588)4375592-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Aluminiumnitrid |0 (DE-588)4226770-5 |D s |
| 689 | 0 | 1 | |a Galliumnitrid |0 (DE-588)4375592-6 |D s |
| 689 | 0 | 2 | |a Mischkristall |0 (DE-588)4170112-4 |D s |
| 689 | 0 | 3 | |a Heterostruktur |0 (DE-588)4123378-5 |D s |
| 689 | 0 | 4 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |D s |
| 689 | 0 | |5 DE-604 | |
| 830 | 0 | |a Selected topics of semiconductor physics and technology |v 28 |w (DE-604)BV011499438 |9 28 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-009158941 | ||
Datensatz im Suchindex
| _version_ | 1804128209549131776 |
|---|---|
| any_adam_object | |
| author | Dimitrov, Roman |
| author_facet | Dimitrov, Roman |
| author_role | aut |
| author_sort | Dimitrov, Roman |
| author_variant | r d rd |
| building | Verbundindex |
| bvnumber | BV013422164 |
| classification_tum | ELT 321d PHY 693d |
| ctrlnum | (OCoLC)643115339 (DE-599)BVBBV013422164 |
| discipline | Physik Elektrotechnik |
| edition | 1. Aufl. |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01832nam a2200469 cb4500</leader><controlfield tag="001">BV013422164</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20020312 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">001107s2000 ad|| m||| 00||| ger d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3932749286</subfield><subfield code="9">3-932749-28-6</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)643115339</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV013422164</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">ger</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-12</subfield><subfield code="a">DE-355</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 321d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 693d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Dimitrov, Roman</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Herstellung und Charakterisierung von AlGaN-GaN-Transistoren</subfield><subfield code="c">Roman Dimitrov</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1. Aufl.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Garching</subfield><subfield code="b">Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V.</subfield><subfield code="c">2000</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">III, III, 196 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Selected topics of semiconductor physics and technology</subfield><subfield code="v">28</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Zugl.: München, Techn. Univ., Diss., 2000</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Aluminiumnitrid</subfield><subfield code="0">(DE-588)4226770-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heterostruktur</subfield><subfield code="0">(DE-588)4123378-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Mischkristall</subfield><subfield code="0">(DE-588)4170112-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumnitrid</subfield><subfield code="0">(DE-588)4375592-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Aluminiumnitrid</subfield><subfield code="0">(DE-588)4226770-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Galliumnitrid</subfield><subfield code="0">(DE-588)4375592-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Mischkristall</subfield><subfield code="0">(DE-588)4170112-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Heterostruktur</subfield><subfield code="0">(DE-588)4123378-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Selected topics of semiconductor physics and technology</subfield><subfield code="v">28</subfield><subfield code="w">(DE-604)BV011499438</subfield><subfield code="9">28</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-009158941</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV013422164 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:45:36Z |
| institution | BVB |
| isbn | 3932749286 |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009158941 |
| oclc_num | 643115339 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-12 DE-355 DE-BY-UBR |
| owner_facet | DE-91 DE-BY-TUM DE-12 DE-355 DE-BY-UBR |
| physical | III, III, 196 S. Ill., graph. Darst. |
| publishDate | 2000 |
| publishDateSearch | 2000 |
| publishDateSort | 2000 |
| publisher | Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V. |
| record_format | marc |
| series | Selected topics of semiconductor physics and technology |
| series2 | Selected topics of semiconductor physics and technology |
| spelling | Dimitrov, Roman Verfasser aut Herstellung und Charakterisierung von AlGaN-GaN-Transistoren Roman Dimitrov 1. Aufl. Garching Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V. 2000 III, III, 196 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Selected topics of semiconductor physics and technology 28 Zugl.: München, Techn. Univ., Diss., 2000 Aluminiumnitrid (DE-588)4226770-5 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Mischkristall (DE-588)4170112-4 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Aluminiumnitrid (DE-588)4226770-5 s Galliumnitrid (DE-588)4375592-6 s Mischkristall (DE-588)4170112-4 s Heterostruktur (DE-588)4123378-5 s Feldeffekttransistor (DE-588)4131472-4 s DE-604 Selected topics of semiconductor physics and technology 28 (DE-604)BV011499438 28 |
| spellingShingle | Dimitrov, Roman Herstellung und Charakterisierung von AlGaN-GaN-Transistoren Selected topics of semiconductor physics and technology Aluminiumnitrid (DE-588)4226770-5 gnd Heterostruktur (DE-588)4123378-5 gnd Mischkristall (DE-588)4170112-4 gnd Galliumnitrid (DE-588)4375592-6 gnd Feldeffekttransistor (DE-588)4131472-4 gnd |
| subject_GND | (DE-588)4226770-5 (DE-588)4123378-5 (DE-588)4170112-4 (DE-588)4375592-6 (DE-588)4131472-4 (DE-588)4113937-9 |
| title | Herstellung und Charakterisierung von AlGaN-GaN-Transistoren |
| title_auth | Herstellung und Charakterisierung von AlGaN-GaN-Transistoren |
| title_exact_search | Herstellung und Charakterisierung von AlGaN-GaN-Transistoren |
| title_full | Herstellung und Charakterisierung von AlGaN-GaN-Transistoren Roman Dimitrov |
| title_fullStr | Herstellung und Charakterisierung von AlGaN-GaN-Transistoren Roman Dimitrov |
| title_full_unstemmed | Herstellung und Charakterisierung von AlGaN-GaN-Transistoren Roman Dimitrov |
| title_short | Herstellung und Charakterisierung von AlGaN-GaN-Transistoren |
| title_sort | herstellung und charakterisierung von algan gan transistoren |
| topic | Aluminiumnitrid (DE-588)4226770-5 gnd Heterostruktur (DE-588)4123378-5 gnd Mischkristall (DE-588)4170112-4 gnd Galliumnitrid (DE-588)4375592-6 gnd Feldeffekttransistor (DE-588)4131472-4 gnd |
| topic_facet | Aluminiumnitrid Heterostruktur Mischkristall Galliumnitrid Feldeffekttransistor Hochschulschrift |
| volume_link | (DE-604)BV011499438 |
| work_keys_str_mv | AT dimitrovroman herstellungundcharakterisierungvonalgangantransistoren |