GaN Al(Ga)N heterostructures: MBE growth, electronic properties and polarization fields:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Jülich
Forschungszentrum Jülich, Zentralbibl.
2000
|
| Schriftenreihe: | Forschungszentrum <Jülich>: Berichte des Forschungszentrums Jülich
3781 |
| Schlagworte: | |
| Beschreibung: | Zugl.: Aachen, Techn. Hochsch., Diss., 2000 |
| Beschreibung: | VIII, 150 S. Ill., graph. Darst. |
Internformat
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| 245 | 1 | 0 | |a GaN Al(Ga)N heterostructures: MBE growth, electronic properties and polarization fields |c Roberta Lantier |
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| 264 | 1 | |a Jülich |b Forschungszentrum Jülich, Zentralbibl. |c 2000 | |
| 300 | |a VIII, 150 S. |b Ill., graph. Darst. | ||
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Datensatz im Suchindex
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| author | Lantier, Roberta |
| author_facet | Lantier, Roberta |
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| bvnumber | BV013413425 |
| classification_tum | PHY 781d PHY 702d ELT 280d |
| ctrlnum | (OCoLC)47071845 (DE-599)BVBBV013413425 |
| discipline | Physik Elektrotechnik |
| format | Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV013413425 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:45:27Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009152805 |
| oclc_num | 47071845 |
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| owner | DE-91 DE-BY-TUM DE-703 |
| owner_facet | DE-91 DE-BY-TUM DE-703 |
| physical | VIII, 150 S. Ill., graph. Darst. |
| publishDate | 2000 |
| publishDateSearch | 2000 |
| publishDateSort | 2000 |
| publisher | Forschungszentrum Jülich, Zentralbibl. |
| record_format | marc |
| series | Forschungszentrum <Jülich>: Berichte des Forschungszentrums Jülich |
| series2 | Forschungszentrum <Jülich>: Berichte des Forschungszentrums Jülich |
| spelling | Lantier, Roberta Verfasser aut GaN Al(Ga)N heterostructures: MBE growth, electronic properties and polarization fields Roberta Lantier Jül 3781 Jülich Forschungszentrum Jülich, Zentralbibl. 2000 VIII, 150 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Forschungszentrum <Jülich>: Berichte des Forschungszentrums Jülich 3781 Zugl.: Aachen, Techn. Hochsch., Diss., 2000 Optische Eigenschaft (DE-588)4123887-4 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Aluminiumnitrid (DE-588)4226770-5 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Elektronische Eigenschaft (DE-588)4235053-0 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Mischkristall (DE-588)4170112-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumnitrid (DE-588)4375592-6 s Aluminiumnitrid (DE-588)4226770-5 s Mischkristall (DE-588)4170112-4 s Heterostruktur (DE-588)4123378-5 s Molekularstrahlepitaxie (DE-588)4170399-6 s Elektronische Eigenschaft (DE-588)4235053-0 s Optische Eigenschaft (DE-588)4123887-4 s DE-604 Forschungszentrum <Jülich>: Berichte des Forschungszentrums Jülich 3781 (DE-604)BV004194732 3781 |
| spellingShingle | Lantier, Roberta GaN Al(Ga)N heterostructures: MBE growth, electronic properties and polarization fields Forschungszentrum <Jülich>: Berichte des Forschungszentrums Jülich Optische Eigenschaft (DE-588)4123887-4 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Aluminiumnitrid (DE-588)4226770-5 gnd Galliumnitrid (DE-588)4375592-6 gnd Elektronische Eigenschaft (DE-588)4235053-0 gnd Heterostruktur (DE-588)4123378-5 gnd Mischkristall (DE-588)4170112-4 gnd |
| subject_GND | (DE-588)4123887-4 (DE-588)4170399-6 (DE-588)4226770-5 (DE-588)4375592-6 (DE-588)4235053-0 (DE-588)4123378-5 (DE-588)4170112-4 (DE-588)4113937-9 |
| title | GaN Al(Ga)N heterostructures: MBE growth, electronic properties and polarization fields |
| title_alt | Jül 3781 |
| title_auth | GaN Al(Ga)N heterostructures: MBE growth, electronic properties and polarization fields |
| title_exact_search | GaN Al(Ga)N heterostructures: MBE growth, electronic properties and polarization fields |
| title_full | GaN Al(Ga)N heterostructures: MBE growth, electronic properties and polarization fields Roberta Lantier |
| title_fullStr | GaN Al(Ga)N heterostructures: MBE growth, electronic properties and polarization fields Roberta Lantier |
| title_full_unstemmed | GaN Al(Ga)N heterostructures: MBE growth, electronic properties and polarization fields Roberta Lantier |
| title_short | GaN Al(Ga)N heterostructures: MBE growth, electronic properties and polarization fields |
| title_sort | gan al ga n heterostructures mbe growth electronic properties and polarization fields |
| topic | Optische Eigenschaft (DE-588)4123887-4 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Aluminiumnitrid (DE-588)4226770-5 gnd Galliumnitrid (DE-588)4375592-6 gnd Elektronische Eigenschaft (DE-588)4235053-0 gnd Heterostruktur (DE-588)4123378-5 gnd Mischkristall (DE-588)4170112-4 gnd |
| topic_facet | Optische Eigenschaft Molekularstrahlepitaxie Aluminiumnitrid Galliumnitrid Elektronische Eigenschaft Heterostruktur Mischkristall Hochschulschrift |
| volume_link | (DE-604)BV004194732 |
| work_keys_str_mv | AT lantierroberta ganalganheterostructuresmbegrowthelectronicpropertiesandpolarizationfields AT lantierroberta jul3781 |