The blue laser diode: the complete story ; with 61 tables
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2000
|
| Ausgabe: | 2., updated and extended ed. |
| Schriftenreihe: | Physics and astronomy
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XVI, 368 S. Ill., graph. Darst. |
| ISBN: | 3540665056 9783540665052 |
Internformat
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| 245 | 1 | 0 | |a The blue laser diode |b the complete story ; with 61 tables |c Shuji Nakamura ; Stephen Pearton ; Gerhard Fasol |
| 250 | |a 2., updated and extended ed. | ||
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2000 | |
| 300 | |a XVI, 368 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Physics and astronomy | |
| 650 | 4 | |a Galliumnitrid - Lumineszenzdiode - Laserdiode - Blaulicht | |
| 650 | 4 | |a Blue light | |
| 650 | 4 | |a Diodes, Semiconductor | |
| 650 | 4 | |a Gallium nitride | |
| 650 | 4 | |a Light emitting diodes | |
| 650 | 4 | |a Semiconductor lasers | |
| 650 | 0 | 7 | |a Galliumnitrid |0 (DE-588)4375592-6 |2 gnd |9 rswk-swf |
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Datensatz im Suchindex
| _version_ | 1804128009355001856 |
|---|---|
| adam_text | SHUJI NAKAMURA STEPHEN PEAR TON GERHARD FASOL THE BLUE LASER DIODE THE
COMPLETE STORY SECOND UPDATED AND EXTENDED EDITION WITH 256 FIGURES AND
61 TABLES SPRINGER CONTENTS 1. INTRODUCTION 1 1.1 LEDS AND LDS 1 1.2
GROUP-ILL NITRIDE COMPOUND SEMICONDUCTORS 3 2. BACKGROUND 7 2.1
INTRODUCTION 7 2.2 APPLICATIONS AND MARKETS FOR GALLIUM NITRIDE LIGHT
EMITTING DIODES (LEDS) AND LASERS 7 2.3 WHO WERE THE EARLY KEY PLAYERS
IN THE FIELD? 10 2.4 WHY INGAN/ALGAN? . 11 2.5 KEY STEPS IN THE
DISCOVERY - MATERIALS ISSUES 13 2.5.1 RESEARCH HISTORY OF SHUJI NAKAMURA
AND SELECTED STEPS IN THE DEVELOPMENT OF THE COMMERCIAL BLUE GAN LED 15
2.6 WHY DID NICHIA SUCCEED WHERE MANY MUCH LARGER MULTINATIONALS AND
RESEARCH GROUPS FAILED? 17 2.7 ADDITIONAL COMMENTS ON BLUE LED RESEARCH
20 2.8 A SHORT SUMMARY OF THE PHYSICS OF SEMICONDUCTOR LASERS AND LEDS
21 2.8.1 LEDS 23 2.8.2 LASERS 24 3. PHYSICS OF GALLIUM NITRIDE AND
RELATED COMPOUNDS 29 3.1 INTRODUCTION 29 3.2 CRYSTAL STRUCTURES 29 3.2.1
WURTZITE VERSUS ZINCBLENDE STRUCTURE 29 3.2.2 GROWTH OF WURTZITE GAN
ONTO SAPPHIRE 31 3.2.3 GROWTH OF CUBIC (ZINCBLENDE) GAN 31 3.2.4 GROWTH
OF GAN ONTO OTHER SUBSTRATES 32 3.3 ELECTRONIC BAND STRUCTURE 32 3.3.1
FUNDAMENTAL OPTICAL TRANSITIONS 34 3.3.2 BAND STRUCTURE NEAR THE
FUNDAMENTAL GAP 35 3.3.3 BAND PARAMETERS AND BAND OFFSETS FOR GAN, A1N,
AND INN 36 XII CONTENTS 3.4 ELASTIC PROPERTIES - PHONONS 38 3.5 OTHER
PROPERTIES OF GALLIUM NITRIDE 38 3.5.1 NEGATIVE ELECTRON AFFINITY (NEA)
41 3.5.2 PYROELECTRICITY 41 3.5.3 TRANSFERRED-ELECTRON EFFECT (GUNN
EFFECT) 41 3.6 SUMMARY OF PROPERTIES 42 4. GAN GROWTH 47 4.1 GROWTH
METHODS FOR CRYSTALLINE GAN 47 4.2 A NEW TWO-FLOW METALORGANIC CHEMICAL
VAPOR DEPOSITION SYSTEM FOR GAN GROWTH (TF-MOCVD) ... 48 4.3 IN SITU
MONITORING OF GAN GROWTH USING INTERFERENCE EFFECTS 52 4.3.1
INTRODUCTION 52 4.3.2 EXPERIMENTAL DETAILS 52 4.3.3 GAN GROWTH WITHOUT
A1N BUFFER LAYER 54 4.3.4 GAN GROWTH WITH A1N BUFFER LAYER 59 4.3.5
SUMMARY 65 4.4 ANALYSIS OF REAL-TIME MONITORING USING INTERFERENCE
EFFECTS . 65 4.4.1 INTRODUCTION 65 4.4.2 EXPERIMENTAL DETAILS 66 4.4.3
RESULTS AND DISCUSSION 67 4.4.4 SUMMARY 75 4.5 GAN GROWTH USING GAN
BUFFER LAYER 75 4.5.1 INTRODUCTION 75 4.5.2 EXPERIMENTAL DETAILS 75
4.5.3 RESULTS AND DISCUSSION 76 4.6 IN SITU MONITORING AND HALL
MEASUREMENTS OF GAN GROWTH WITH GAN BUFFER LAYERS 79 4.6.1 INTRODUCTION
79 4.6.2 EXPERIMENTAL DETAILS 80 4.6.3 RESULTS AND DISCUSSION 80 4.6.4
SUMMARY 88 5. P-TYPE GAN OBTAINED BY ELECTRON BEAM IRRADIATION 89 5.1
HIGHLY P-TYPE MG-DOPED GAN FILMS GROWN WITH GAN BUFFER LAYERS 89 5.1.1
INTRODUCTION 89 5.1.2 EXPERIMENTAL DETAILS 89 5.1.3 RESULTS AND
DISCUSSION 90 5.2 HIGH-POWER GAN P-N JUNCTION BLUE LIGHT EMITTING DIODES
. . 95 5.2.1 INTRODUCTION 95 5.2.2 EXPERIMENTAL DETAILS 95 5.2.3 RESULTS
AND DISCUSSION 96 5.2.4 SUMMARY 101 CONTENTS XIII 6. N-TYPE GAN 103 6.1
SI- AND GE-DOPED GAN FILMS GROWN WITH GAN BUFFER LAYERS 103 6.2
EXPERIMENTAL DETAILS 104 6.3 SI DOPING 104 6.4 GE DOPING 108 6.5
MOBILITY AS A FUNCTION OF THE CARRIER CONCENTRATION ILL 6.6 SUMMARY 112
7. P-TYPE GAN 113 7.1 HISTORY OF P-TYPE GAN RESEARCH 113 7.2 THERMAL
ANNEALING EFFECTS ON P-TYPE MG-DOPED GAN FILMS . 114 7.2.1 INTRODUCTION
114 7.2.2 EXPERIMENTAL DETAILS 114 7.2.3 RESULTS AND DISCUSSION 114
7.2.4 APPENDIX 119 7.3 HOLE COMPENSATION MECHANISM OF P-TYPE GAN FILMS
120 7.3.1 INTRODUCTION 120 7.3.2 EXPERIMENTAL DETAILS 120 7.3.3 RESULTS
AND DISCUSSION: EXPLANATION OF THE HOLE COMPENSATION MECHANISM OF P-TYPE
GAN . 121 7.3.4 SUMMARY: HYDROGEN PASSIVATION AND ANNEALING OF P-TYPE
GAN 135 7.4 PROPERTIES AND EFFECTS OF HYDROGEN IN GAN 136 7.4.1 PRESENT
STATE OF KNOWLEDGE 137 7.4.2 PASSIVATION 140 7.4.3 HYDROGEN IN AS-GROWN
GAN 141 7.4.4 DIFFUSION OF H IN IMPLANTED OR PLASMA-TREATED GAN . . 145
7.4.5 SUMMARY 147 8. INGAN 149 8.1 INTRODUCTORY REMARKS: THE ROLE OF
LATTICE MISMATCH 149 8.2 HIGH-QUALITY INGAN FILMS GROWN ON GAN FILMS 150
8.2.1 INTRODUCTION: INGAN ON GAN 150 8.2.2 EXPERIMENTAL DETAILS: INGAN
ON GAN 151 8.2.3 RESULTS AND DISCUSSION: INGAN ON GAN 151 8.2.4 SUMMARY:
INGAN ON GAN 154 8.3 SI-DOPED INGAN FILMS GROWN ON GAN FILMS 155 8.3.1
INTRODUCTION: SI-DOPED INGAN ON GAN 155 8.3.2 EXPERIMENTAL DETAILS:
SI-DOPED INGAN ON GAN 155 8.3.3 RESULTS AND DISCUSSION: SI-DOPED INGAN
ON GAN 155 8.3.4 SUMMARY: SI-DOPED INGAN ON GAN 159 8.4 CD-DOPED INGAN
FILMS GROWN ON GAN FILMS 160 8.4.1 INTRODUCTION: CD-DOPED INGAN ON GAN
160 8.4.2 EXPERIMENTAL DETAILS 161 8.4.3 RESULTS AND DISCUSSION 161
8.4.4 . SUMMARY: CD-DOPED INGAN 166 XIV CONTENTS 8.5 IN X GAI_ X N/IRIJ
/ GAI_J / N SUPERLATTICES GROWN ON GAN FILMS . . 166 8.5.1 INTRODUCTION:
LN X G&I- X N /LN Y GAI- Y N SUPERLATTICES . . . 166 8.5.2 EXPERIMENTS:
IN X GAI_ X N/IN A GAI_ Y N SUPERLATTICES . . . 167 8.5.3 RESULTS AND
DISCUSSION: LN X G&I- X N/IRIYGAI^YN SUPERLATTICES 167 8.5.4 SUMMARY:
IN^GAI^AJN/IN^GAI-YN SUPERLATTICES 174 8.6 GROWTH OF IN^GAI-^N COMPOUND
SEMICONDUCTORS AND HIGH-POWER INGAN/ALGAN DOUBLE HETEROSTRUCTURE VIOLET
LIGHT EMITTING DIODES 174 8.6.1 INTRODUCTION 174 8.6.2 EXPERIMENTAL
DETAILS 174 8.6.3 GROWTH AND PROPERTIES OF IN X GAI_A;N COMPOUND
SEMICONDUCTORS 177 8.6.4 HIGH POWER INGAN/ALGAN DOUBLE HETEROSTRUCTURE
VIOLET LIGHT EMITTING DIODES 181 8.6.5 SUMMARY 183 8.7
P-GAN/N-INGAN/N-GAN DOUBLE-HETEROSTRUCTURE BLUE LIGHT EMITTING DIODES
184 8.7.1 EXPERIMENTAL DETAILS 184 8.7.2 RESULTS AND DISCUSSION 184
8.7.3 SUMMARY 188 8.8 HIGH-POWER INGAN/GAN DOUBLE-HETEROSTRUCTURE VIOLET
LIGHT EMITTING DIODES 188 9. ZN AND SI CO-DOPED INGAN/ALGAN
DOUBLE-HETEROSTRUCTURE BLUE AND BLUE-GREEN LEDS 193 9.1 ZN-DOPED INGAN
GROWTH AND INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE LIGHT EMITTING DIODES
193 9.1.1 INTRODUCTION 193 9.1.2 EXPERIMENTAL DETAILS 194 9.1.3 ZN-DOPED
INGAN 194 9.1.4 INGAN/ALGAN DH BLUE LEDS 198 9.2 CANDELA-CLASS
HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE LIGHT EMITTING
DIODES 201 9.3 HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE
BLUE-GREEN LIGHT EMITTING DIODES 203 9.4 A BRIGHT FUTURE FOR BLUE-GREEN
LEDS 207 9.4.1 INTRODUCTION 207 9.4.2 GAN GROWTH 209 9.4.3 INGAN 209
9.4.4 INGAN/ALGAN DH LED 209 9.4.5- SUMMARY 214 CONTENTS XV 10. INGAN
SINGLE-QUANTUM-WELL LEDS 215 10.1 HIGH-BRIGHTNESS INGAN BLUE, GREEN, AND
YELLOW LEDS WITH QUANTUM-WELL STRUCTURES 215 10.1.1 INTRODUCTION 215
10.1.2 EXPERIMENTAL DETAILS 216 10.1.3 RESULTS AND DISCUSSION 217 10.1.4
SUMMARY 220 10.2 HIGH-POWER INGAN SINGLE-QUANTUM-WELL BLUE AND VIOLET
LIGHT EMITTING DIODES 220 10.3 SUPER-BRIGHT GREEN INGAN
SINGLE-QUANTUM-WELL LIGHT EMITTING DIODES 223 10.3.1 INTRODUCTION 223
10.3.2 EXPERIMENTAL DETAILS 224 10.3.3 RESULTS AND DISCUSSION 225 10.3.4
SUMMARY 229 10.4 WHITE LEDS 230 11. ROOM-TEMPERATURE PULSED OPERATION OF
LASER DIODES .... 237 11.1 INGAN-BASED MULTI-QUANTUM-WELL LASER DIODES
237 11.1.1 INTRODUCTION 237 11.1.2 EXPERIMENTAL DEATILS 237 11.1.3
RESULTS AND DISCUSSION 239 11.1.4 SUMMARY 242 11.2 INGAN
MULTI-QUANTUM-WELL LASER DIODES WITH CLEAVED MIRROR CAVITY FACETS 242
11.2.1 INTRODUCTION 242 11.2.2 EXPERIMENTAL DETAILS 242 11.2.3 RESULTS
AND DISCUSSION 244 11.2.4 SUMMARY 247 11.3 INGAN MULTI-QUANTUM-WELL
LASER DIODES GROWN ON MGAL 2 O 4 SUBSTRATES 247 11.3.1 CHARACTERISTICS
OF INGAN MULTI-QUANTUM-WELL LASER DIODES 252 11.4 THE FIRST
III-V-NITRIDE-BASED VIOLET LASER DIODES 256 11.4.1 INTRODUCTION 256
11.4.2 EXPERIMENTAL DETAILS 256 11.4.3 RESULTS AND DISCUSSION 258 11.4.4
SUMMARY 262 11.5 OPTICAL GAIN AND CARRIER LIFETIME OF INGAN
MULTI-QUANTUM-WELL LASER DIODES 262 11.6 RIDGE-GEOMETRY INGAN
MULTI-QUANTUM-WELL LASER DIODES . . 268 11.7 LONGITUDINAL MODE SPECTRA
AND ULTRASHORT PULSE GENERATION OF INGAN MULTI-QUANTUM-WELL LASER DIODES
273 XVI CONTENTS 12. EMISSION MECHANISMS OF LEDS AND LDS 279 12.1 INGAN
SINGLE-QUANTUM-WELL (SQW)-STRUCTURE LEDS 279 12.2 EMISSION MECHANISM OF
SQW LEDS 281 12.3 INGAN MULTI-QUANTUM-WELL (MQW)-STRUCTURE LDS 284 12.4
SUMMARY 289 13. ROOM TEMPERATURE CW OPERATION OF INGAN MQW LDS . 291
13.1 FIRST CONTINUOUS-WAVE OPERATION OF INGAN
MULTI-QUANTUM-WELL-STRUCTURE LASER DIODES AT 233 K 291 13.2 FIRST
ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF INGAN
MULTI-QUANTUM-WELL-STRUCTURE LASER DIODES 296 13.5 RT CW OPERATION OF
INGAN MQW LDS WITH A LONG LIFETIME 301 13.6 BLUE/GREEN SEMICONDUCTOR
LASER 305 13.6.1 BLUE/GREEN LEDS 305 13.6.2 BLUISH-PURPLE LDS 307 13.6.3
SUMMARY 313 13.7 RT CW INGAN MQW LDS WITH IMPROVED LIFETIME 314 14.
LATEST RESULTS: LASERS WITH SELF-ORGANIZED INGAN QUANTUM DOTS 319 14.1
INTRODUCTION 319 14.2 FABRICATION 319 14.3 EMISSION SPECTRA 320 14.4
SELF-ORGANIZED INGAN QUANTUM DOTS 325 14.5 ADVANCES IN LEDS 326 14.6
ADVANCES IN LASER DIODES 328 15. CONCLUSIONS 335 15.1 SUMMARY 335 15.2
OUTLOOK 336 APPENDIX 339 BIOGRAPHIES 343 SHUJI NAKAMURA 343 GERHARD
FASOL 344 STEPHEN PEARTON 345 REFERENCES 347 INDEX 361
|
| any_adam_object | 1 |
| author | Nakamura, Shuji 1954- Pearton, Stephen Fasol, Gerhard |
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| callnumber-subject | TA - General and Civil Engineering |
| classification_rvk | UH 5616 |
| ctrlnum | (OCoLC)247556036 (DE-599)BVBBV013247084 |
| dewey-full | 621.366 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.366 |
| dewey-search | 621.366 |
| dewey-sort | 3621.366 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 2., updated and extended ed. |
| format | Book |
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| id | DE-604.BV013247084 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:42:25Z |
| institution | BVB |
| isbn | 3540665056 9783540665052 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-009029025 |
| oclc_num | 247556036 |
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| owner_facet | DE-29T DE-355 DE-BY-UBR DE-703 DE-20 DE-92 DE-522 DE-634 DE-188 DE-83 |
| physical | XVI, 368 S. Ill., graph. Darst. |
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| publisher | Springer |
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| series2 | Physics and astronomy |
| spelling | Nakamura, Shuji 1954- Verfasser (DE-588)133300889 aut The blue laser diode the complete story ; with 61 tables Shuji Nakamura ; Stephen Pearton ; Gerhard Fasol 2., updated and extended ed. Berlin [u.a.] Springer 2000 XVI, 368 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Physics and astronomy Galliumnitrid - Lumineszenzdiode - Laserdiode - Blaulicht Blue light Diodes, Semiconductor Gallium nitride Light emitting diodes Semiconductor lasers Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Laserdiode (DE-588)4195920-6 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 s Laserdiode (DE-588)4195920-6 s DE-604 Pearton, Stephen Verfasser aut Fasol, Gerhard Verfasser aut HEBIS Datenaustausch Darmstadt application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009029025&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Nakamura, Shuji 1954- Pearton, Stephen Fasol, Gerhard The blue laser diode the complete story ; with 61 tables Galliumnitrid - Lumineszenzdiode - Laserdiode - Blaulicht Blue light Diodes, Semiconductor Gallium nitride Light emitting diodes Semiconductor lasers Galliumnitrid (DE-588)4375592-6 gnd Laserdiode (DE-588)4195920-6 gnd |
| subject_GND | (DE-588)4375592-6 (DE-588)4195920-6 |
| title | The blue laser diode the complete story ; with 61 tables |
| title_auth | The blue laser diode the complete story ; with 61 tables |
| title_exact_search | The blue laser diode the complete story ; with 61 tables |
| title_full | The blue laser diode the complete story ; with 61 tables Shuji Nakamura ; Stephen Pearton ; Gerhard Fasol |
| title_fullStr | The blue laser diode the complete story ; with 61 tables Shuji Nakamura ; Stephen Pearton ; Gerhard Fasol |
| title_full_unstemmed | The blue laser diode the complete story ; with 61 tables Shuji Nakamura ; Stephen Pearton ; Gerhard Fasol |
| title_short | The blue laser diode |
| title_sort | the blue laser diode the complete story with 61 tables |
| title_sub | the complete story ; with 61 tables |
| topic | Galliumnitrid - Lumineszenzdiode - Laserdiode - Blaulicht Blue light Diodes, Semiconductor Gallium nitride Light emitting diodes Semiconductor lasers Galliumnitrid (DE-588)4375592-6 gnd Laserdiode (DE-588)4195920-6 gnd |
| topic_facet | Galliumnitrid - Lumineszenzdiode - Laserdiode - Blaulicht Blue light Diodes, Semiconductor Gallium nitride Light emitting diodes Semiconductor lasers Galliumnitrid Laserdiode |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=009029025&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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