Proceedings of the Fifth International Symposium on Process Physics and Modeling in Semiconductor Technology:
Gespeichert in:
Körperschaft: | |
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Format: | Tagungsbericht Buch |
Sprache: | English |
Veröffentlicht: |
Pennington, NJ
Electrochemical Soc.
1999
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Schriftenreihe: | Electrochemical Society: Proceedings
1999,2 |
Schlagworte: | |
Beschreibung: | VIII, 230 S. Ill., graph. Darst. |
ISBN: | 1566772249 |
Internformat
MARC
LEADER | 00000nam a2200000 cb4500 | ||
---|---|---|---|
001 | BV013156262 | ||
003 | DE-604 | ||
005 | 20010213 | ||
007 | t | ||
008 | 000517s1999 ad|| |||| 10||| eng d | ||
020 | |a 1566772249 |9 1-56677-224-9 | ||
035 | |a (OCoLC)42080404 | ||
035 | |a (DE-599)BVBBV013156262 | ||
040 | |a DE-604 |b ger |e rakwb | ||
041 | 0 | |a eng | |
049 | |a DE-703 | ||
050 | 0 | |a TK7871.85 | |
082 | 0 | |a 621.3815/2 |2 21 | |
084 | |a UP 3200 |0 (DE-625)146379: |2 rvk | ||
111 | 2 | |a International Symposium on Process Physics and Modeling in Semiconductor Technology |n 5 |d 1999 |c Seattle, Wash. |j Verfasser |0 (DE-588)5342567-4 |4 aut | |
245 | 1 | 0 | |a Proceedings of the Fifth International Symposium on Process Physics and Modeling in Semiconductor Technology |c ed. C. S. Murthy ... |
246 | 1 | 3 | |a Process physics and modeling in semiconductor technology |
264 | 1 | |a Pennington, NJ |b Electrochemical Soc. |c 1999 | |
300 | |a VIII, 230 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a Electrochemical Society: Proceedings |v 1999,2 | |
650 | 7 | |a Ions - Implantation - Modèles mathématiques |2 ram | |
650 | 7 | |a Semiconducteurs - Défauts - Modèles mathématiques |2 ram | |
650 | 7 | |a Semiconducteurs - Modèles mathématiques |2 ram | |
650 | 4 | |a Mathematisches Modell | |
650 | 4 | |a Crystals |x Defects |x Mathematical models |v Congresses | |
650 | 4 | |a Ion implantation |x Mathematical models |v Congresses | |
650 | 4 | |a Semiconductors |x Mathematical models |v Congresses | |
650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1993 |z Seattle Wash. |2 gnd-content | |
689 | 0 | 0 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
689 | 0 | |5 DE-604 | |
700 | 1 | |a Murthy, C. S. |e Sonstige |4 oth | |
830 | 0 | |a Electrochemical Society: Proceedings |v 1999,2 |w (DE-604)BV001900941 |9 1999,2 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-008963842 |
Datensatz im Suchindex
_version_ | 1804127856283877376 |
---|---|
any_adam_object | |
author_corporate | International Symposium on Process Physics and Modeling in Semiconductor Technology Seattle, Wash |
author_corporate_role | aut |
author_facet | International Symposium on Process Physics and Modeling in Semiconductor Technology Seattle, Wash |
author_sort | International Symposium on Process Physics and Modeling in Semiconductor Technology Seattle, Wash |
building | Verbundindex |
bvnumber | BV013156262 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.85 |
callnumber-search | TK7871.85 |
callnumber-sort | TK 47871.85 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | UP 3200 |
ctrlnum | (OCoLC)42080404 (DE-599)BVBBV013156262 |
dewey-full | 621.3815/2 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/2 |
dewey-search | 621.3815/2 |
dewey-sort | 3621.3815 12 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Conference Proceeding Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01969nam a2200469 cb4500</leader><controlfield tag="001">BV013156262</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20010213 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">000517s1999 ad|| |||| 10||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1566772249</subfield><subfield code="9">1-56677-224-9</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)42080404</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV013156262</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">21</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3200</subfield><subfield code="0">(DE-625)146379:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="111" ind1="2" ind2=" "><subfield code="a">International Symposium on Process Physics and Modeling in Semiconductor Technology</subfield><subfield code="n">5</subfield><subfield code="d">1999</subfield><subfield code="c">Seattle, Wash.</subfield><subfield code="j">Verfasser</subfield><subfield code="0">(DE-588)5342567-4</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Proceedings of the Fifth International Symposium on Process Physics and Modeling in Semiconductor Technology</subfield><subfield code="c">ed. C. S. Murthy ...</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Process physics and modeling in semiconductor technology</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Pennington, NJ</subfield><subfield code="b">Electrochemical Soc.</subfield><subfield code="c">1999</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">VIII, 230 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Electrochemical Society: Proceedings</subfield><subfield code="v">1999,2</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Ions - Implantation - Modèles mathématiques</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconducteurs - Défauts - Modèles mathématiques</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconducteurs - Modèles mathématiques</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Mathematisches Modell</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Crystals</subfield><subfield code="x">Defects</subfield><subfield code="x">Mathematical models</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ion implantation</subfield><subfield code="x">Mathematical models</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Mathematical models</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1993</subfield><subfield code="z">Seattle Wash.</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Murthy, C. S.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Electrochemical Society: Proceedings</subfield><subfield code="v">1999,2</subfield><subfield code="w">(DE-604)BV001900941</subfield><subfield code="9">1999,2</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-008963842</subfield></datafield></record></collection> |
genre | (DE-588)1071861417 Konferenzschrift 1993 Seattle Wash. gnd-content |
genre_facet | Konferenzschrift 1993 Seattle Wash. |
id | DE-604.BV013156262 |
illustrated | Illustrated |
indexdate | 2024-07-09T18:40:00Z |
institution | BVB |
institution_GND | (DE-588)5342567-4 |
isbn | 1566772249 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008963842 |
oclc_num | 42080404 |
open_access_boolean | |
owner | DE-703 |
owner_facet | DE-703 |
physical | VIII, 230 S. Ill., graph. Darst. |
publishDate | 1999 |
publishDateSearch | 1999 |
publishDateSort | 1999 |
publisher | Electrochemical Soc. |
record_format | marc |
series | Electrochemical Society: Proceedings |
series2 | Electrochemical Society: Proceedings |
spelling | International Symposium on Process Physics and Modeling in Semiconductor Technology 5 1999 Seattle, Wash. Verfasser (DE-588)5342567-4 aut Proceedings of the Fifth International Symposium on Process Physics and Modeling in Semiconductor Technology ed. C. S. Murthy ... Process physics and modeling in semiconductor technology Pennington, NJ Electrochemical Soc. 1999 VIII, 230 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electrochemical Society: Proceedings 1999,2 Ions - Implantation - Modèles mathématiques ram Semiconducteurs - Défauts - Modèles mathématiques ram Semiconducteurs - Modèles mathématiques ram Mathematisches Modell Crystals Defects Mathematical models Congresses Ion implantation Mathematical models Congresses Semiconductors Mathematical models Congresses Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1993 Seattle Wash. gnd-content Halbleitertechnologie (DE-588)4158814-9 s DE-604 Murthy, C. S. Sonstige oth Electrochemical Society: Proceedings 1999,2 (DE-604)BV001900941 1999,2 |
spellingShingle | Proceedings of the Fifth International Symposium on Process Physics and Modeling in Semiconductor Technology Electrochemical Society: Proceedings Ions - Implantation - Modèles mathématiques ram Semiconducteurs - Défauts - Modèles mathématiques ram Semiconducteurs - Modèles mathématiques ram Mathematisches Modell Crystals Defects Mathematical models Congresses Ion implantation Mathematical models Congresses Semiconductors Mathematical models Congresses Halbleitertechnologie (DE-588)4158814-9 gnd |
subject_GND | (DE-588)4158814-9 (DE-588)1071861417 |
title | Proceedings of the Fifth International Symposium on Process Physics and Modeling in Semiconductor Technology |
title_alt | Process physics and modeling in semiconductor technology |
title_auth | Proceedings of the Fifth International Symposium on Process Physics and Modeling in Semiconductor Technology |
title_exact_search | Proceedings of the Fifth International Symposium on Process Physics and Modeling in Semiconductor Technology |
title_full | Proceedings of the Fifth International Symposium on Process Physics and Modeling in Semiconductor Technology ed. C. S. Murthy ... |
title_fullStr | Proceedings of the Fifth International Symposium on Process Physics and Modeling in Semiconductor Technology ed. C. S. Murthy ... |
title_full_unstemmed | Proceedings of the Fifth International Symposium on Process Physics and Modeling in Semiconductor Technology ed. C. S. Murthy ... |
title_short | Proceedings of the Fifth International Symposium on Process Physics and Modeling in Semiconductor Technology |
title_sort | proceedings of the fifth international symposium on process physics and modeling in semiconductor technology |
topic | Ions - Implantation - Modèles mathématiques ram Semiconducteurs - Défauts - Modèles mathématiques ram Semiconducteurs - Modèles mathématiques ram Mathematisches Modell Crystals Defects Mathematical models Congresses Ion implantation Mathematical models Congresses Semiconductors Mathematical models Congresses Halbleitertechnologie (DE-588)4158814-9 gnd |
topic_facet | Ions - Implantation - Modèles mathématiques Semiconducteurs - Défauts - Modèles mathématiques Semiconducteurs - Modèles mathématiques Mathematisches Modell Crystals Defects Mathematical models Congresses Ion implantation Mathematical models Congresses Semiconductors Mathematical models Congresses Halbleitertechnologie Konferenzschrift 1993 Seattle Wash. |
volume_link | (DE-604)BV001900941 |
work_keys_str_mv | AT internationalsymposiumonprocessphysicsandmodelinginsemiconductortechnologyseattlewash proceedingsofthefifthinternationalsymposiumonprocessphysicsandmodelinginsemiconductortechnology AT murthycs proceedingsofthefifthinternationalsymposiumonprocessphysicsandmodelinginsemiconductortechnology AT internationalsymposiumonprocessphysicsandmodelinginsemiconductortechnologyseattlewash processphysicsandmodelinginsemiconductortechnology AT murthycs processphysicsandmodelinginsemiconductortechnology |