MOSFET modeling & BSIM3 user's guide:
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Boston u.a.
Kluwer
1999
|
Schlagworte: | |
Beschreibung: | XI, 461 S. Ill. |
ISBN: | 0792385756 |
Internformat
MARC
LEADER | 00000nam a2200000 c 4500 | ||
---|---|---|---|
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003 | DE-604 | ||
007 | t | ||
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035 | |a (OCoLC)41646035 | ||
035 | |a (DE-599)BVBBV013149759 | ||
040 | |a DE-604 |b ger |e rakwb | ||
041 | 0 | |a eng | |
049 | |a DE-29T | ||
050 | 0 | |a TK7871.95 | |
082 | 0 | |a 621.3815/284 |2 21 | |
100 | 1 | |a Cheng, Yuhua |e Verfasser |4 aut | |
245 | 1 | 0 | |a MOSFET modeling & BSIM3 user's guide |c by Yuhua Cheng and Chenming Hu |
264 | 1 | |a Boston u.a. |b Kluwer |c 1999 | |
300 | |a XI, 461 S. |b Ill. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
650 | 4 | |a Datenverarbeitung | |
650 | 4 | |a Electronic circuit design |x Data processing | |
650 | 4 | |a Metal oxide semiconductor field-effect transistors |x Computer simulation | |
650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Schaltungsentwurf |0 (DE-588)4179389-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
689 | 0 | |5 DE-604 | |
689 | 1 | 0 | |a Schaltungsentwurf |0 (DE-588)4179389-4 |D s |
689 | 1 | |5 DE-604 | |
689 | 2 | 0 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |D s |
689 | 2 | |5 DE-604 | |
689 | 3 | 0 | |a MOS |0 (DE-588)4130209-6 |D s |
689 | 3 | |5 DE-604 | |
700 | 1 | |a Hu, Chenming |e Verfasser |4 aut |
Datensatz im Suchindex
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---|---|
adam_text | |
any_adam_object | |
author | Cheng, Yuhua Hu, Chenming |
author_facet | Cheng, Yuhua Hu, Chenming |
author_role | aut aut |
author_sort | Cheng, Yuhua |
author_variant | y c yc c h ch |
building | Verbundindex |
bvnumber | BV013149759 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.95 |
callnumber-search | TK7871.95 |
callnumber-sort | TK 47871.95 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
ctrlnum | (OCoLC)41646035 (DE-599)BVBBV013149759 |
dewey-full | 621.3815/284 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/284 |
dewey-search | 621.3815/284 |
dewey-sort | 3621.3815 3284 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
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id | DE-604.BV013149759 |
illustrated | Illustrated |
indexdate | 2024-07-20T03:14:53Z |
institution | BVB |
isbn | 0792385756 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008958952 |
oclc_num | 41646035 |
open_access_boolean | |
owner | DE-29T |
owner_facet | DE-29T |
physical | XI, 461 S. Ill. |
publishDate | 1999 |
publishDateSearch | 1999 |
publishDateSort | 1999 |
publisher | Kluwer |
record_format | marc |
spelling | Cheng, Yuhua Verfasser aut MOSFET modeling & BSIM3 user's guide by Yuhua Cheng and Chenming Hu Boston u.a. Kluwer 1999 XI, 461 S. Ill. txt rdacontent n rdamedia nc rdacarrier Datenverarbeitung Electronic circuit design Data processing Metal oxide semiconductor field-effect transistors Computer simulation MOS (DE-588)4130209-6 gnd rswk-swf Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 s DE-604 Schaltungsentwurf (DE-588)4179389-4 s Feldeffekttransistor (DE-588)4131472-4 s MOS (DE-588)4130209-6 s Hu, Chenming Verfasser aut |
spellingShingle | Cheng, Yuhua Hu, Chenming MOSFET modeling & BSIM3 user's guide Datenverarbeitung Electronic circuit design Data processing Metal oxide semiconductor field-effect transistors Computer simulation MOS (DE-588)4130209-6 gnd Schaltungsentwurf (DE-588)4179389-4 gnd Feldeffekttransistor (DE-588)4131472-4 gnd MOS-FET (DE-588)4207266-9 gnd |
subject_GND | (DE-588)4130209-6 (DE-588)4179389-4 (DE-588)4131472-4 (DE-588)4207266-9 |
title | MOSFET modeling & BSIM3 user's guide |
title_auth | MOSFET modeling & BSIM3 user's guide |
title_exact_search | MOSFET modeling & BSIM3 user's guide |
title_full | MOSFET modeling & BSIM3 user's guide by Yuhua Cheng and Chenming Hu |
title_fullStr | MOSFET modeling & BSIM3 user's guide by Yuhua Cheng and Chenming Hu |
title_full_unstemmed | MOSFET modeling & BSIM3 user's guide by Yuhua Cheng and Chenming Hu |
title_short | MOSFET modeling & BSIM3 user's guide |
title_sort | mosfet modeling bsim3 user s guide |
topic | Datenverarbeitung Electronic circuit design Data processing Metal oxide semiconductor field-effect transistors Computer simulation MOS (DE-588)4130209-6 gnd Schaltungsentwurf (DE-588)4179389-4 gnd Feldeffekttransistor (DE-588)4131472-4 gnd MOS-FET (DE-588)4207266-9 gnd |
topic_facet | Datenverarbeitung Electronic circuit design Data processing Metal oxide semiconductor field-effect transistors Computer simulation MOS Schaltungsentwurf Feldeffekttransistor MOS-FET |
work_keys_str_mv | AT chengyuhua mosfetmodelingbsim3usersguide AT huchenming mosfetmodelingbsim3usersguide |