Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals:
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Bibliographic Details
Format: Book
Language:English
Published: Berlin WIAS 2000
Series:Weierstraß-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint 552
Item Description:Literaturverz. S. 19 - 21
Physical Description:21 S. graph. Darst. : 30 cm

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Interlibrary loan Place Request Caution: Not in THWS collection!