Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals:
Gespeichert in:
Format: | Buch |
---|---|
Sprache: | English |
Veröffentlicht: |
Berlin
WIAS
2000
|
Schriftenreihe: | Weierstraß-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint
552 |
Beschreibung: | Literaturverz. S. 19 - 21 |
Beschreibung: | 21 S. graph. Darst. : 30 cm |
Internformat
MARC
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Datensatz im Suchindex
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id | DE-604.BV013144924 |
illustrated | Illustrated |
indexdate | 2024-07-09T18:39:47Z |
institution | BVB |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008954862 |
oclc_num | 76117326 |
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physical | 21 S. graph. Darst. : 30 cm |
publishDate | 2000 |
publishDateSearch | 2000 |
publishDateSort | 2000 |
publisher | WIAS |
record_format | marc |
series | Weierstraß-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint |
series2 | Weierstraß-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint |
spelling | Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. Olaf Klein ... Radiation and convection driven transient heat transfer during sublimation growth of silicon carbide single crystals Berlin WIAS 2000 21 S. graph. Darst. : 30 cm txt rdacontent n rdamedia nc rdacarrier Weierstraß-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint 552 Literaturverz. S. 19 - 21 Klein, Olaf Sonstige oth Weierstraß-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint 552 (DE-604)BV009885922 552 |
spellingShingle | Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals Weierstraß-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint |
title | Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals |
title_alt | Radiation and convection driven transient heat transfer during sublimation growth of silicon carbide single crystals |
title_auth | Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals |
title_exact_search | Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals |
title_full | Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. Olaf Klein ... |
title_fullStr | Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. Olaf Klein ... |
title_full_unstemmed | Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. Olaf Klein ... |
title_short | Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals |
title_sort | radiation and convection driven transient heat transfer during sublimation growth of silicon carbide single crystals |
volume_link | (DE-604)BV009885922 |
work_keys_str_mv | AT kleinolaf radiationandconvectiondriventransientheattransferduringsublimationgrowthofsiliconcarbidesinglecrystals |