(2000). Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals. WIAS.
Chicago Style (17th ed.) CitationRadiation- and Convection-driven Transient Heat Transfer During Sublimation Growth of Silicon Carbide Single Crystals. Berlin: WIAS, 2000.
MLA (9th ed.) CitationRadiation- and Convection-driven Transient Heat Transfer During Sublimation Growth of Silicon Carbide Single Crystals. WIAS, 2000.
Warning: These citations may not always be 100% accurate.