(2000). Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals. WIAS.
Chicago-Zitierstil (17. Ausg.)Radiation- and Convection-driven Transient Heat Transfer During Sublimation Growth of Silicon Carbide Single Crystals. Berlin: WIAS, 2000.
MLA-Zitierstil (9. Ausg.)Radiation- and Convection-driven Transient Heat Transfer During Sublimation Growth of Silicon Carbide Single Crystals. WIAS, 2000.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.