Handbook of advanced plasma processing techniques:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2000
|
| Schriftenreihe: | Physics and astronomy online library
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XVI, 653 S. Ill., graph. Darst. |
| ISBN: | 3540667725 |
Internformat
MARC
| LEADER | 00000nam a22000008c 4500 | ||
|---|---|---|---|
| 001 | BV013142443 | ||
| 003 | DE-604 | ||
| 005 | 20010131 | ||
| 007 | t | ||
| 008 | 000502s2000 gw ad|| |||| 00||| eng d | ||
| 016 | 7 | |a 958733775 |2 DE-101 | |
| 020 | |a 3540667725 |9 3-540-66772-5 | ||
| 035 | |a (OCoLC)43836636 | ||
| 035 | |a (DE-599)BVBBV013142443 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c DE | ||
| 049 | |a DE-703 |a DE-29T |a DE-1102 |a DE-706 |a DE-634 |a DE-83 |a DE-11 | ||
| 050 | 0 | |a TA2020 | |
| 082 | 0 | |a 621.044 |2 21 | |
| 084 | |a UQ 2800 |0 (DE-625)146501: |2 rvk | ||
| 084 | |a ZM 7680 |0 (DE-625)160562: |2 rvk | ||
| 245 | 1 | 0 | |a Handbook of advanced plasma processing techniques |c R. J. Shul ... (ed.) |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2000 | |
| 300 | |a XVI, 653 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Physics and astronomy online library | |
| 650 | 4 | |a Circuits électroniques - Conception et construction | |
| 650 | 4 | |a Gravure par plasma | |
| 650 | 4 | |a Plasmas, Technique des | |
| 650 | 4 | |a Projection au plasma | |
| 650 | 4 | |a Electronic circuits | |
| 650 | 4 | |a Integrated circuits |x Design and construction | |
| 650 | 4 | |a Plasma engineering | |
| 650 | 4 | |a Plasma etching | |
| 650 | 4 | |a Plasma spraying | |
| 650 | 0 | 7 | |a Plasmaätzen |0 (DE-588)4174821-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a PECVD-Verfahren |0 (DE-588)4267316-1 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a PECVD-Verfahren |0 (DE-588)4267316-1 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Plasmaätzen |0 (DE-588)4174821-9 |D s |
| 689 | 1 | |5 DE-604 | |
| 700 | 1 | |a Shul, Randy J. |e Sonstige |4 oth | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008953877&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-008953877 | |
Datensatz im Suchindex
| _version_ | 1807322977787707392 |
|---|---|
| adam_text |
CONTENTS
1
SOME
FUNDAMENTAL
ASPECTS
OF
PLASMA-ASSISTED
ETCHING
J.W.
COBURN
.
1
1.1
INTRODUCTION
.
1
1.2
THE
EVOLUTION
OF
PLASMA
ETCHING
EQUIPMENT
.
4
1.2.1
THE
"
BARREL
"
SYSTEMS
.
4
1.2.2
PLANAR
AND
CYLINDRICAL
DIODE
SYSTEMS
.
5
1.2.3
PLANAR
TRIODE
SYSTEMS
.
8
1.2.4
DUAL
FREQUENCY
PLANAR
TRIODE
SYSTEMS
.
9
1.2.5
INDUCTIVELY
COUPLED
PLASMAS,
WAVE
GENERATED
PLASMAS,
ETC
.
9
1.3
THE
ROLE
OF
IONS
IN
REACTIVE
ION
ETCHING
.
12
1.3.1
ION-ASSISTED
GAS-SURFACE
CHEMISTRY
AND
THE
RESULTING
ETCHING
ANISOTROPY
.
12
1.3.2
MECHANISTIC
ASPECTS
OF
ION-ASSISTED
GAS-SURFACE
CHEMISTRY
15
1.3.3
OTHER
FACTORS
THAT
INFLUENCE
ETCHING
ANISOTROPY
.
18
1.4
THE
INFLUENCE
OF
THE
REACTOR
WALLS
AND
OTHER
SURFACES
.
22
1.4.1
THE
ETCHING
PROCESS
.
22
1.4.2
POLYMER
DEPOSITION
.
24
1.4.3
SURFACE-CATALYZED
ATOM-ATOM
RECOMBINATION
.
25
1.5
ION
BEAM-BASED
METHODS
.
27
1.6
SUMMARY
.
31
REFERENCES
.
31
2
PLASMA
FUNDAMENTALS
FOR
MATERIALS
PROCESSING
J.E.
STEVENS
.
33
2.1
INTRODUCTION
.
33
2.2
SINGLE
PARTICLE
MOTION
.
36
2.3
COLLISION
PROCESSES
.
38
2.4
VELOCITY
DISTRIBUTIONS
.
43
2.5
SHEATHS
.
45
2.6
PLASMA
TRANSPORT
.
51
2.7
DIELECTRIC
PROPERTIES
.
55
2.8
PLASMA
SOURCES
FOR
THIN
FILMS
PROCESSING
.
57
2.8.1
CAPACITIVE
SOURCES
.
58
VIII
CONTENTS
2.8.2
HIGH
DENSITY
SOURCES
.
59
2.8.3
INDUCTIVE
SOURCES
.
60
2.8.4
ECR
SOURCES
.
61
2.8.5
HELICON
SOURCES
.
62
2.8.6
WAVE
SOURCES
.
63
2.8.7
DOWNSTREAM
SOURCES
.
63
REFERENCES
.
65
3
PLASMA
MODELING
E.
MEEKS
AND
P.
HO
.
69
3.1
INTRODUCTION
.
69
3.2
HISTORICAL
PERSPECTIVE
.
70
3.3
PLASMA
MODELING
ISSUES
.
71
3.3.1
WELL
MIXED
REACTOR
MODELS
AND
APPLICATIONS
(0-D)
.
73
3.3.2
ONE-DIMENSIONAL
MODELS
AND
APPLICATIONS
.
76
3.3.3
TWO-DIMENSIONAL
MODELS
AND
APPLICATIONS
.
79
3.3.4
THREE-DIMENSIONAL
MODELS
AND
APPLICATIONS
.
83
3.3.5
2-D
AND
3-D
PROFILE
EVOLUTION
MODELS
AND
APPLICATIONS
.
84
3.4
CHEMICAL
REACTION
MECHANISMS
.
84
3.4.1
GAS-PHASE
KINETIC
AND
TRANSPORT
PROCESSES
.
86
3.4.2
SURFACE
CHEMISTRY
.
92
3.4.3
REACTION
MECHANISM
VALIDATION,
TUNING,
AND
REDUCTION
.
96
3.4.4
SAMPLE
REACTION
MECHANISM
.
98
3.5
EXAMPLES
OF
APPLICATION
OF
PLASMA
MODELING
TO
DESIGN
OR
OPTIMIZATION
.
103
3.5.1
OPTIMIZATION
OF
PLASMA
CLEANING
PROCESS
TO
REDUCE
REACTOR
EMISSIONS
.
103
3.5.2
OPTIMIZATION
OF
CHEMICAL
DOWNSTREAM
ETCH
PROCESS
CONDITIONS
.
107
3.5.3
REACTOR
DESIGN:
SCALING-UP
FROM
200
TO
300
MM
WAFERS
.
ILL
3.5.4
MAPPING
PRESSURE
GRADIENTS
IN
REACTOR
PUMP
PORT
AND
INLET
REGIONS
.
114
3.6
FUTURE
DIRECTIONS
OF
PLASMA
MODELING
.
114
REFERENCES
.
117
4
PLASMA
REACTOR
MODELING
M.
MEYYAPPAN
.
123
4.1
INTRODUCTION
.
123
4.2
REACTOR
SCALE
MODEL
.
124
4.2.1
A
REVIEW
OF
VARIOUS
APPROACHES
.
124
4.2.2
GLOBAL
MODEL
.
125
4.2.3
CONTINUUM
REACTOR
MODEL
.
127
4.2.4
HYBRID
MODEL
.
134
4.3
FEATURE
LEVEL
MODELING
.
137
CONTENTS
IX
4.4
DATABASE
NEEDS
.
141
4.5
CONCLUDING
REMARKS
.
141
REFERENCES
.
143
5
OVERVIEW
OF
PLASMA
DIAGNOSTIC
TECHNIQUES
G.A.
HEBNER,
P.A.
MILLER,
AND
J.R.
WOODWORTH
.
145
5.1
INTRODUCTION
.
145
5.2
PLASMA
ELECTRICAL
CHARACTERIZATION
.
146
5.2.1
ELECTRICAL
DIAGNOSTICS
.
146
5.2.2
MICROWAVE
DIAGNOSTIC
TECHNIQUES
.
167
5.2.3
ION-ENERGY
ANALYZERS
.
171
5.3
OPTICAL
DIAGNOSTIC
TECHNIQUES
.
177
5.3.1
OPTICAL
EMISSION
.
177
5.3.2
OPTICAL
ABSORPTION
TECHNIQUES
.
185
5.3.3
LASER-INDUCED
FLUORESCENCE
.
190
5.3.4
NEGATIVE
ION
PHOTODETACHMENT
.
197
5.3.5
OPTOGALVANIC
SPECTROSCOPY
.
198
5.3.6
THOMSON
SCATTERING
.
199
REFERENCES
.
200
6
MASS
SPECTROMETRIC
CHARACTERIZATION
OF
PLASMA
ETCHING
PROCESSES
C.R.
EDDY,
JR
.
205
6.1
INTRODUCTION
.
205
6.2
APPLICATION
TO
FUNDAMENTAL
STUDIES
.
208
6.2.1
SILICON/FLUORINE
.
209
6.2.2
SILICON/CHLORINE
.
210
6.2.3
GALLIUM
ARSENIDE/CHLORINE
.
211
6.3
APPLICATION
IN
ETCH
PROCESSING
REACTORS
.
212
6.3.1
GENERAL
DESCRIPTION
OF
EXPERIMENTS
.
212
6.3.2
IV-IV
SEMICONDUCTORS
.
212
6.3.3
III-V
SEMICONDUCTORS
.
219
6.3.4
II
VI
SEMICONDUCTORS
.
232
6.3.5
METALS
AND
PEROVSKITES
.
239
6.3.6
ISSUES
IN
APPLICATION
AND
INTERPRETATION
.
244
6.4
SUMMARY
AND
FUTURE
DIRECTIONS
.
248
REFERENCES
.
254
7
FUNDAMENTALS
OF
PLASMA
PROCESS-INDUCED
CHARGING
AND
DAMAGE
K.P.
GIAPIS
.
257
7.1
INTRODUCTION
.
257
7.2
THE
ORIGIN
OF
PATTERN-DEPENDENT
CHARGING
.
260
7.2.1
DIFFERENCES
IN
ION
AND
ELECTRON
ANGULAR
DISTRIBUTIONS
.
260
X
CONTENTS
7.2.2
CHARGING
AS
A
RESULT
OF
CURRENT
IMBALANCE
.
263
7.2.3
ELECTRON
SHADING
EFFECTS
.
264
7.3
THE
NOTCHING
EFFECT
.
268
7.3.1
OBSERVATIONS
AND
MECHANISMS
.
268
7.3.2
PHENOMENA
THAT
INFLUENCE
NOTCHING
.
270
7.3.3
RESULTS
FROM
SELF-CONSISTENT
CHARGING
SIMULATIONS
.
275
7.3.4
VALIDATION
.
279
7.4
OTHER
PROFILE
EFFECTS
INFLUENCED
BY
CHARGING
.
282
7.4.1
REACTIVE
ION
ETCHING
LAG
.
282
7.4.2
MICROTRENCHING
.
285
7.5
GATE
OXIDE
DEGRADATION
.
290
7.5.1
THE
DRIVING
FORCE
FOR
CURRENT
INJECTION
.
290
7.5.2
TUNNELING
CURRENT
TRANSIENTS
.
292
7.5.3
THE
INFLUENCE
OF
ELECTRON
AND
ION
TEMPERATURE
.
295
7.6
CHARGING
REDUCTION
METHODOLOGY
.
300
7.7
CONCLUDING
REMARKS
.
303
7.7.1
HISTORICAL
PERSPECTIVE
.
303
7.7.2
WILL
CHARGING
PROBLEMS
PERSIST?
.
304
REFERENCES
.
305
8
SURFACE
DAMAGE
INDUCED
BY
DRY
ETCHING
S.W.
PANG
.
309
8.1
INTRODUCTION
.
309
8.2
SURFACE
DAMAGE
IN
SI
.
309
8.2.1
CHANGES
IN
ELECTRICAL
CHARACTERISTICS
DUE
TO
DRY
ETCHING
.
310
8.2.2
DEFECTS
EVALUATED
BY
SURFACE
ANALYSIS
.
315
8.2.3
MODELING
OF
ETCH-INDUCED
DAMAGE
.
319
8.3
SURFACE
DAMAGE
IN
III-V
SEMICONDUCTORS
.
325
8.3.1
DAMAGE
DEPENDENCE
ON
ETCH
CONDITIONS
.
326
8.3.2
EFFECTS
OF
ETCH
TIME
AND
MATERIALS
ON
DEFECT
GENERATION
.
335
8.3.3
CHANGES
IN
ELECTRICAL
AND
OPTICAL
CHARACTERISTICS
.
338
8.4
DAMAGE
REMOVAL
.
344
8.4.1
WET
ETCHING,
DRY
ETCHING,
THERMAL
ANNEALING,
AND
TWO-STEP
ETCHING
.
344
8.4.2
PASSIVATION
BY
LOW-ENERGY
REACTIVE
SPECIES
.
353
8.5
SUMMARY
.
357
REFERENCES
.
357
9
PHOTOMASK
ETCHING
D.J.
RESNICK
.
361
9.1
INTRODUCTION
.
361
9.2
OPTICAL
LITHOGRAPHY
.
364
9.2.1
PHOTOMASK
BASICS
.
364
9.2.2
CHROME
PHOTOMASKS
.
364
CONTENTS
XI
9.2.3 MOSI
PHOTOMASKS
.
372
9.2.4
PHASE
SHIFT
MASK
TECHNOLOGY
.
379
9.3
X-RAY
LITHOGRAPHY
.
383
9.3.1
X-RAY
LITHOGRAPHY
BASICS
.
383
9.3.2
GOLD
ABSORBER-BASED
MASKS
.
385
9.3.3
REFRACTORY
MASKS
.
388
9.3.4
AMORPHOUS
REFRACTORY-BASED
MASKS
.
389
9.3.5
THERMAL
CHARACTERISTICS
OF
A
MASK
ETCH
PROCESS
.
395
9.3.6
HARD
MASK
MATERIALS
.
400
9.4
SCALPEL
.
402
9.4.1
SCALPEL
BASICS
.
402
9.4.2
SCALPEL
MASK
BLANK
PROCESSING
.
404
9.4.3
SCALPEL
MASK
PATTERN
TRANSFER
.
405
9.5
EUVL
.
407
9.5.1
EUVL
BASICS
.
407
9.5.2
EUVL
MASKS
.
408
9.5.3
EUV
MASK
PATTERN
TRANSFER
.
409
9.6
ION
PROJECTION
LITHOGRAPHY
.
411
9.6.1
ION
PROJECTION
LITHOGRAPHY
BASICS
.
411
9.6.2
IPL
MASKS
.
411
9.6.3
IPL
MASK
PATTERN
TRANSFER
.
413
9.7
IPL
MASK
DISTORTION
ISSUES
.
414
9.8
CONCLUSION
.
415
REFERENCES
.
416
10
BULK
SI
MICROMACHINING
FOR
INTEGRATED
MICROSYSTEMS
AND
MEMS
PROCESSING
R.J.
SHUL
AND
J.G.
FLEMING
.
419
10.1
INTRODUCTION
.
419
10.2
ETCH
TECHNOLOGIES
.
421
10.2.1
WET
CHEMICAL
ETCHING
.
421
10.2.2
PLASMA
ETCHING
.
421
10.2.3
REACTIVE
ION
ETCHING
.
423
10.2.4
HIGH-DENSITY
PLASMA
ETCHING
.
424
10.2.5
DEEP
REACTIVE
ION
ETCHING
.
425
10.3
ECR
RESULTS
.
426
10.3.1
ECR
EXPERIMENTAL
.
427
'
10.3.2
ECR
PROCESS
PARAMETERS
.
427
10.3.3
ECR
PROCESS
APPLICATIONS
.
433
10.4
DRIE
RESULTS
.
439
10.4.1
DRIE
VERSUS
ICP
ETCH
COMPARISON
.
439
10.4.2
ETCH
RATES
AND
SELECTIVITY
TO
MASKING
MATERIALS
.
441
10.4.3
ASPECT
RATIO
DEPENDENT
ETCHING
(ARDE)
IN
DRIE
.
445
10.4.4
ETCH
SELECTIVITIES
.
446
XII
CONTENTS
10.5
DRIE
APPLICATIONS
.
448
10.5.1
CHEMICAL
SENSING
DEVICES
.
448
10.5.2
ADVANCED
PACKAGING
.
453
10.5.3
SOI
DRIE
ETCHING
.
455
10.6
CONCLUSIONS
.
457
REFERENCES
.
457
11
PLASMA
PROCESSING
OF
III-V
MATERIALS
C.
YOUTSEY
AND
I.
ADESIDA
.
459
11.1
INTRODUCTION
.
459
11.2
DRY
ETCHING
TECHNIQUES
.
459
11.2.1
ION
BEAM
ETCHING
.
459
11.2.2
REACTIVE
ION
ETCHING
.
462
11.2.3
HIGH-DENSITY
PLASMA
REACTIVE
ION
ETCHING
.
464
11.3
MASKING
MATERIALS
AND
METHODS
.
466
11.4
DRY
ETCHING
CHEMISTRIES
.
469
11.5
DRY
ETCHING
OF
GAAS
AND
RELATED
MATERIALS
.
474
11.6
DRY
ETCHING
OF
INP
AND
RELATED
MATERIALS
.
477
11.7
DRY
ETCHING
OF
GAN
AND
RELATED
MATERIALS
.
483
11.8
SELECTIVE
DRY
ETCHING
OF
III-V
MATERIALS
.
490
11.8.1
GAAS
ON
ALGAAS
.
490
11.8.2
INGAAS
ON
INALAS
.
492
11.8.3
GAN
ON
ALGAN
.
493
11.9
CONCLUSION
.
494
REFERENCES
.
496
12
ION
BEAM
ETCHING
OF
COMPOUND
SEMICONDUCTORS
G.A.
VAWTER
.
507
12.1
INTRODUCTION
.
507
12.2
DEFINITIONS
.
507
12.2.1
ION
BEAM
ETCHING
.
507
12.2.2
REACTIVE
ION
BEAM
ETCHING
.
508
12.2.3
CHEMICALLY
ASSISTED
ION
BEAM
ETCHING
.
508
12.2.4
SPUTTER
YIELD
.
510
12.3
ION
SOURCES
.
510
12.4
HISTORIC
DEVELOPMENT
.
512
12.5
GRID
DESIGN,
BEAM
UNIFORMITY,
AND
DIVERGENCE
.
513
12.6
BRIEF
OVERVIEW
OF
ETCHING
KINETICS
AND
CHEMISTRY
.
515
12.7
SURFACE
QUALITY
AND
ETCH
MASKING
.
518
12.8
RIBE
ETCH
TECHNOLOGY
.
522
12.8.1
RIBE
OF
GAAS
AND
ALGAAS
.
522
12.8.2
RIBE
OF
INP
.
526
12.8.3
RIBE
OF
INGAASP
AND
INP
.
528
12.8.4
RIBE
OF
ALGALNP,
GALNP
AND
ALGALNAS
.
528
CONTENTS
XIII
12.8.5
RIBE
OF
(AL,GA)SB,
(IN,GA)SB
AND
INASSB
.
529
12.8.6
RIBE
OF
GAP
AND
GAN
.
530
12.8.7
RIBE
OF
ZNSE
AND
ZNS
.
530
12.9
CAIBE
ETCH
TECHNOLOGY
.
530
12.9.1
CAIBE
OF
GAAS
.
531
12.9.2
CAIBE
OF
ALGAAS
.
532
12.9.3
CAIBE
OF
INP
AND
INGAASP
.
533
12.9.4
CAIBE
OF
ALGALNP
AND
ALGALNAS
.
534
12.9.5
CAIBE
OF
(AL,GA)SB
AND
INSB
.
535
12.9.6
CAIBE
OF
(AL,GA)N
.
535
12.10
ENDPOINT
DETECTION
.
535
12.11
DAMAGE
.
538
REFERENCES
.
539
13
DRY
ETCHING
OF
INP
VIAS
S.
THOMAS
III
AND
J.J.
BROWN
.
549
13.1
INTRODUCTION
.
549
13.2
PAST
DIFFICULTIES
IN
OBTAINING
HIGH
RATE
ETCHING
FOR
INP
.
553
13.2.1
HIGH
BIAS
CH4-BASED
ETCHING
OF
INP
.
553
13.2.2
ELEVATED
TEMPERATURE
CL-BASED
ETCHING
OF
INP
.
554
13.3
HIGH
DENSITY
PLASMA
SOURCES
FOR
HIGH
INP
ETCH
RATE
.
554
13.3.1
REDUCED
BIAS
CH4-BASED
ECR
ETCHING
OF
INP
.
555
13.3.2
ADDITION
OF
CL
TO
CH4-BASED
ECR
ETCHING
OF
INP
.
556
13.3.3
LOW
TEMPERATURE
CL-BASED
ETCHING
.
556
13.4
MEASUREMENT
OF
PLASMA
HEATING
FOR
INP
ETCHING
.
557
13.4.1
WAFER
HEATING
DURING
HIGH-DENSITY
PLASMA
ETCHING
.
557
13.4.2
IMPACT
OF
PLASMA
HEATING
FOR
INP
ETCHING
.
560
13.4.3
EFFECTS
OF
CHAMBER
PRESSURE
AND
WAFER
TEMPERATURE
ON
ETCH
RATE
.
563
13.5
APPLICATION
TO
VIA
HOLE
ETCHING
.
564
13.5.1
ETCH
MASK
AND
ETCH
CHARACTERISTICS
.
565
13.5.2
ETCHING
SLOT
VIAS
USING
A
PHOTORESIST
MASK
.
567
13.5.3
OES
FOR
ENDPOINT
.
569
13.6
SUMMARY
.
570
REFERENCES
.
571
14
DEVICE
DAMAGE
DURING
LOW
TEMPERATURE
HIGH-DENSITY
PLASMA
CHEMICAL
VAPOR
DEPOSITION
J.
LEE
AND
F.
REN
.
575
14.1
INTRODUCTION
.
575
14.2
EXPERIMENTAL
.
576
14.3
RESULTS
AND
DISCUSSION
.
579
14.4
SUMMARY
AND
CONCLUSIONS
.
601
REFERENCES
.
602
XIV
CONTENTS
15
DRY
ETCHING
OF
MAGNETIC
MATERIALS
K.B.
JUNG,
H.
CHO,
AND
S.J.
PEARTON
.
607
15.1
INTRODUCTION
.
607
15.2
ION
MILLING
.
608
15.3
CH-BASED
ICP
ETCHING
OF
NIFE
AND
RELATED
MATERIALS
.
609
15.4
COPPER
DRY
ETCHING
IN
CH/AR
.
620
15.5
CO/NH3
ETCHING
OF
MAGNETIC
MATERIALS
.
628
15.6
ECR
AND
ICP
ETCHING
OF
NIMNSB
.
635
15.7
DRY
ETCHING
OF
LACAMNOX
AND
SMCO
.
640
15.8
SUMMARY
AND
CONCLUSIONS
.
644
REFERENCES
.
644
SUBJECT
INDEX
.
649 |
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV013142443 |
| callnumber-first | T - Technology |
| callnumber-label | TA2020 |
| callnumber-raw | TA2020 |
| callnumber-search | TA2020 |
| callnumber-sort | TA 42020 |
| callnumber-subject | TA - General and Civil Engineering |
| classification_rvk | UQ 2800 ZM 7680 |
| ctrlnum | (OCoLC)43836636 (DE-599)BVBBV013142443 |
| dewey-full | 621.044 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.044 |
| dewey-search | 621.044 |
| dewey-sort | 3621.044 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Werkstoffwissenschaften / Fertigungstechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a22000008c 4500</leader><controlfield tag="001">BV013142443</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20010131</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">000502s2000 gw ad|| |||| 00||| eng d</controlfield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">958733775</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3540667725</subfield><subfield code="9">3-540-66772-5</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)43836636</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV013142443</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-1102</subfield><subfield code="a">DE-706</subfield><subfield code="a">DE-634</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-11</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TA2020</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.044</subfield><subfield code="2">21</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UQ 2800</subfield><subfield code="0">(DE-625)146501:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZM 7680</subfield><subfield code="0">(DE-625)160562:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Handbook of advanced plasma processing techniques</subfield><subfield code="c">R. J. Shul ... (ed.)</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin [u.a.]</subfield><subfield code="b">Springer</subfield><subfield code="c">2000</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XVI, 653 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Physics and astronomy online library</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Circuits électroniques - Conception et construction</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gravure par plasma</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Plasmas, Technique des</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Projection au plasma</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronic circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield><subfield code="x">Design and construction</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Plasma engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Plasma etching</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Plasma spraying</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Plasmaätzen</subfield><subfield code="0">(DE-588)4174821-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">PECVD-Verfahren</subfield><subfield code="0">(DE-588)4267316-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">PECVD-Verfahren</subfield><subfield code="0">(DE-588)4267316-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Plasmaätzen</subfield><subfield code="0">(DE-588)4174821-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shul, Randy J.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008953877&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-008953877</subfield></datafield></record></collection> |
| id | DE-604.BV013142443 |
| illustrated | Illustrated |
| indexdate | 2024-08-14T01:05:03Z |
| institution | BVB |
| isbn | 3540667725 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008953877 |
| oclc_num | 43836636 |
| open_access_boolean | |
| owner | DE-703 DE-29T DE-1102 DE-706 DE-634 DE-83 DE-11 |
| owner_facet | DE-703 DE-29T DE-1102 DE-706 DE-634 DE-83 DE-11 |
| physical | XVI, 653 S. Ill., graph. Darst. |
| publishDate | 2000 |
| publishDateSearch | 2000 |
| publishDateSort | 2000 |
| publisher | Springer |
| record_format | marc |
| series2 | Physics and astronomy online library |
| spelling | Handbook of advanced plasma processing techniques R. J. Shul ... (ed.) Berlin [u.a.] Springer 2000 XVI, 653 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Physics and astronomy online library Circuits électroniques - Conception et construction Gravure par plasma Plasmas, Technique des Projection au plasma Electronic circuits Integrated circuits Design and construction Plasma engineering Plasma etching Plasma spraying Plasmaätzen (DE-588)4174821-9 gnd rswk-swf PECVD-Verfahren (DE-588)4267316-1 gnd rswk-swf PECVD-Verfahren (DE-588)4267316-1 s DE-604 Plasmaätzen (DE-588)4174821-9 s Shul, Randy J. Sonstige oth DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008953877&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Handbook of advanced plasma processing techniques Circuits électroniques - Conception et construction Gravure par plasma Plasmas, Technique des Projection au plasma Electronic circuits Integrated circuits Design and construction Plasma engineering Plasma etching Plasma spraying Plasmaätzen (DE-588)4174821-9 gnd PECVD-Verfahren (DE-588)4267316-1 gnd |
| subject_GND | (DE-588)4174821-9 (DE-588)4267316-1 |
| title | Handbook of advanced plasma processing techniques |
| title_auth | Handbook of advanced plasma processing techniques |
| title_exact_search | Handbook of advanced plasma processing techniques |
| title_full | Handbook of advanced plasma processing techniques R. J. Shul ... (ed.) |
| title_fullStr | Handbook of advanced plasma processing techniques R. J. Shul ... (ed.) |
| title_full_unstemmed | Handbook of advanced plasma processing techniques R. J. Shul ... (ed.) |
| title_short | Handbook of advanced plasma processing techniques |
| title_sort | handbook of advanced plasma processing techniques |
| topic | Circuits électroniques - Conception et construction Gravure par plasma Plasmas, Technique des Projection au plasma Electronic circuits Integrated circuits Design and construction Plasma engineering Plasma etching Plasma spraying Plasmaätzen (DE-588)4174821-9 gnd PECVD-Verfahren (DE-588)4267316-1 gnd |
| topic_facet | Circuits électroniques - Conception et construction Gravure par plasma Plasmas, Technique des Projection au plasma Electronic circuits Integrated circuits Design and construction Plasma engineering Plasma etching Plasma spraying Plasmaätzen PECVD-Verfahren |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008953877&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT shulrandyj handbookofadvancedplasmaprocessingtechniques |