Physical vapor deposition of thin films:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York [u.a.]
Wiley
2000
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| Schriftenreihe: | A Wiley-Interscience publication
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIII, 312 S. Ill., graph. Darst. |
| ISBN: | 0471330019 |
Internformat
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Datensatz im Suchindex
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| adam_text | PHYSICAL VAPOR DEPOSITION OF THIN FILMS JOHN E. MAHAN COLORADO STATE
UNIVERSITY A WILEY-INTERSCIENCE PUBLICATION JOHN WILEY & SONS, INC. NEW
YORK * CHICHESTER * WEINHEIM * BRISBANE * SINGAPORE * TORONTO CONTENTS
PREFACE I INTRODUCTION TO PHYSICAL VAPOR DEPOSITION 1.1 PHYSICAL VAPOR
DEPOSITION TECHNOLOGIES AND THEIR BASIC PHYSICAL SCIENCE, 1 OVERVIEW, 1
KINETIC THEORY, 5 ADSORPTION AND CONDENSATION, 8 HIGH VACUUM, 12
SPUTTERING DISCHARGES, 14 1.2 SUMMARY OF PRINCIPAL EQUATIONS, 16 1.3
MATHEMATICAL SYMBOLS, CONSTANTS, AND THEIR U REFERENCE, 18 II THE
KINETIC THEORY OF GASES II. 1 STATISTICS, 20 THE BOLTZMANN DISTRIBUTION,
20 CHARACTERISTIC PARTICLE SPEEDS, 22 II.2 COLLISIONS, 23 IMPINGEMENT
RATE AND INCIDENT FLUX ANGULAR DISTRIBUTION, 23 THE IDEAL GAS LAW, 26
MEAN FREE PATH, 27 VI11 CONTENTS 11.3 PROPERTIES, 30 HEAT CAPACITY; THE
IDEAL DIATOMIC GAS, 30 DIFFUSIVITY, 31 VISCOSITY, 32 THERMAL
CONDUCTIVITY, 34 11.4 GAS FLOW, 34 FLOW REGIMES, 34 VISCOUS LAMINAR
FLOW, 35 MOLECULAR FLOW, 36 CONDUCTANCE, 37 11.5 UNITS OF PRESSURE AND
AMOUNTS OF GAS, 38 UNITS OF PRESSURE, 38 AMOUNTS OF GAS, 39 11.6 SUMMARY
OF PRINCIPAL EQUATIONS, 39 11.7 APPENDIX, 40 ARRHENIUS PLOTS, 40 SOME
DEFINITE INTEGRALS, 41 ATOMIC DIAMETERS OF THE ELEMENTS, 42 11.8
MATHEMATICAL SYMBOLS, CONSTANTS, AND THEIR UNITS, 43 REFERENCES, 44 III
ADSORPTION AND CONDENSATION 45 III. 1 ADSORPTION OF GASES, 47 WHY GASES
ADSORB, 47 MEAN RESIDENCE TIME, 49 LANGMUIR S ADSORPTION ISOTHERM, 49
ATOMIC LAYER EPITAXY, 53 111.2 VAPOR PRESSURE, 57 THE THERMALLY
ACTIVATED VAPOR PRESSURE, 57 VAPOR PRESSURE DATA FOR THE ELEMENTS, 58
VAPOR PRESSURES OF ALLOYS AND COMPOUNDS, 60 111.3 CONDENSATION OF
VAPORS, 62 CONDENSATION OF PURE ELEMENTS, 62 CONDENSATION OF COMPOUNDS
THAT PRODUCE A STOICHIOMETRIC VAPOR, 64 FLASH EVAPORATION OF COMPOUNDS
THAT DISSOCIATE, 65 STEADY-STATE TECHNIQUES FOR ALLOY FILMS, 65
COEVAPORATION WITH THE THREE-TEMPERATURE METHOD, 67 REACTIVE EVAPORATION
AND SPUTTERING, 70 111.4 SUMMARY OF PRINCIPAL EQUATIONS, 71 111. 5
APPENDIX: THERMODYNAMIC FUNDAMENTALS, 72 THE THERMODYNAMIC POTENTIALS
AND THE FIRST AND SECOND LAWS, 72 THE GIBBS FREE ENERGY: THE RELEVANT
POTENTIAL FOR EQUILIBRIA AT FIXED TEMPERATURE AND PRESSURE, 73 STANDARD
REACTION AND FORMATION QUANTITIES, AND THE EQUILIBRIUM CONSTANT, 74
STANDARD THERMOCHEMICAL DATA, 76 *.6 MATHEMATICAL SYMBOLS, CONSTANTS,
AND THEIR UNITS, 79 REFERENCES, 80 PRINCIPLES OF HIGH VACUUM IV. 1 BASIC
VACUUM CONCEPTS, 84 PUMPING SPEED, 84 THROUGHPUT, 87 A THROUGHPUT LAW,
88 CONDUCTANCE, 93 IV.2 BEHAVIOR OF REAL VACUUM SYSTEMS, 94 A MORE
REALISTIC VACUUM SYSTEM MODEL, 94 DESORPTION, OUTGASSING, AND
PERMEATION, 96 IV.3 OPERATION PRINCIPLES OF VACUUM PUMPS AND GAUGES, 99
HOW SEVEN IMPORTANT PUMPS WORK, 99 TWO VACUUM GAUGES IN WIDESPREAD USE:
THE THERMOCOUPLE AND IONIZATION GAUGES, 105 IV.4 SUMMARY OF PRINCIPAL
EQUATIONS, 107 IV. 5 APPENDIX, 107 HOW TO DRAW AND ANALYZE VACUUM
SCHEMATIC DIAGRAMS, 107 AN ELECTRICAL NETWORK ANALOGY, 108 A SURVEY OF
PAST DEFINITIONS OF THROUGHPUT, 111 IV.6 MATHEMATICAL SYMBOLS,
CONSTANTS, AND THEIR UNITS, 112 REFERENCES, 112 EVAPORATION SOURCES V. 1
THE EFFUSION CELL AND NOZZLE-JET EVAPORATION SOURCES, 117 THE IDEAL
EFFUSION CELL, 117 THE COSINE LAW OF EMISSION, 118 X CONTENTS THE
NONEQUILIBRIUM EFFUSION CELL, 119 THE NEAR-IDEAL EFFUSION CELL, 121 THE
OPEN-TUBE EFFUSION CELL, 123 THE CONICAL EFFUSION CELL, 124 THE
NOZZLE-JET SOURCE, 125 V.2 FREE EVAPORATION SOURCES, 127 FREE
EVAPORATION, 127 THE IDEAL POINT SOURCE MODEL, 129 HOW E-GUN EVAPORATORS
WORK, 129 BEAM INTENSITY OF THE E-GUN EVAPORATOR, 131 V.3 PULSED LASER
DEPOSITION, 133 LASER-INDUCED VAPORIZATION, 133 A SIMPLE HEATING MODEL,
135 OTHER PHENOMENA, 141 V.4 MATERIALS ASPECTS OF EVAPORATION SOURCES,
143 EVAPORATION TEMPERATURES OF THE ELEMENTS, 143 THE PROBLEM OF
COMPOSITION CHANGE IN THE EVAPORATION OF ALLOYS, 144 CRUCIBLE
INTERACTIONS, 146 V.5 SUMMARY OF PRINCIPAL EQUATIONS, 147 V.6
MATHEMATICAL SYMBOLS, CONSTANTS, AND THEIR UNITS, 148 REFERENCES, 149 VI
PRINCIPLES OF SPUTTERING DISCHARGES 153 VI. 1 SPUTTERING ARRANGEMENTS,
155 DC SPUTTERING, 155 RF SPUTTERING, 156 THE MAGNETRON, 157 OTHER
SPUTTERING ARRANGEMENTS, 158 VI.2 A PRACTICAL SPUTTERING PLASMA AND ITS
CURRENT DENSITIES AND POTENTIALS, 159 A PRACTICAL SPUTTERING PLASMA, 159
THE IDEAL LANGMUIR PROBE, 161 AN EXPERIMENTAL LANGMUIR PROBE
CHARACTERISTIC, 165 THE ENHANCED ION CURRENT DENSITY, 165 THE PROBE
SHEATH, 168 VI.3 GASEOUS DISCHARGES FOR SPUTTERING, 170 A DC DISCHARGE
MODEL, 170 CONTENTS XI THE CATHODE AND ANODE SHEATHS, 174 THE SPUTTERING
PROJECTILES THAT BOMBARD THE CATHODE, 176 AN RF DISCHARGE MODEL, 178 THE
RF SHEATHS, 182 VI.4 SUMMARY OF PRINCIPAL EQUATIONS, 183 VI.5 APPENDIX,
184 THE VOLTAGE-CURRENT CHARACTERISTIC OF A DC DISCHARGE, 184 THE
VOLTAGE - CURRENT CHARACTERISTIC OF AN RF DISCHARGE, 189 THE DC GLOW,
190 THE RF GLOW, 193 EXCEPTIONS TO THE ABOVE, 193 VI.6 MATHEMATICAL
SYMBOLS, CONSTANTS, AND THEIR UNITS, 195 REFERENCES, 196 VII SPUTTERING
199 VII. 1 GENERAL CHARACTERISTICS AND BACKGROUND, 199 DEFINITION OF
SPUTTERING, 199 THE MECHANISMS OF SPUTTERING, 201 A BRIEF HISTORY OF
SPUTTERING THEORY AND SIMULATION, 203 SOURCES OF SPUTTER YIELD DATA, 205
VII.2 TRENDS IN SPUTTER YIELD DATA, 206 PROJECTILE ENERGY DEPENDENCE,
207 DEPENDENCE ON SURFACE BINDING ENERGY, 212 DEPENDENCE ON CHOICE OF
PROJECTILE, 214 EFFECT OF ANGLE OF INCIDENCE, 214 ENERGY DISTRIBUTION OF
SPUTTERED PARTICLES, 219 ANGULAR DISTRIBUTION OF SPUTTERED PARTICLES,
220 SINGLE-CRYSTAL TARGETS, 222 TARGET CONDITIONING AND DOSE EFFECTS,
222 VI 1.3 BASIC CONCEPTS FOR MODELING, 223 THE SURFACE BINDING ENERGY,
223 ENERGY TRANSFER IN BINARY ELASTIC COLLISIONS OF HARD SPHERES, 225
THRESHOLD ENERGY FOR SPUTTERING AT NORMAL INCIDENCE, 227 NUCLEAR ENERGY
LOSS THEORY, 229 LINEAR CASCADE THEORY, 232 XII CONTENTS VI1.4 A
SIMPLIFIED COLLISIONAL MODEL FOR SPUTTER YIELD. 238 A YIELD EXPRESSION,
238 PREDICTIONS, 241 SUMMARY, 244 VII.5 AN IDEAL SPUTTER DEPOSITION
SOURCE, 245 THE COSINE LAW OF EMISSION, 245 THE BEAM INTENSITY OF A
SPUTTERING SOURCE, 247 COMBINED INTERNAL FLUX SPECTRA FOR THE SIMPLIFIED
COLLISIONAL MODEL, 248 COMBINED EXTERNAL SPECTRA ASSUMING THE SPHERICAL
SURFACE BINDING MODEL, 248 COMBINED EXTERNAL SPECTRA ASSUMING THE PLANAR
SURFACE BINDING MODEL, 249 VII.6 SUMMARY OF PRINCIPAL EQUATIONS NOT
FOUND IN THE SAMPLE CALCULATION OF YIELD, 250 VII.7 APPENDIXES, 251
APPENDIX A: THE EMPIRICAL YIELD FORMULA OF MATSUNAMI ET AL. [1984], 251
APPENDIX B: A SUMMARY OF TARGET PARAMETERS, 252 APPENDIX C: SOME
COLLISIONAL SPUTTERING THEORIES, 256 APPENDIX D: A SAMPLE CALCULATION OF
YIELD WITH THE SIMPLIFIED COLLISIONAL MODEL, 258 VII.8 MATHEMATICAL
SYMBOLS, CONSTANTS, AND THEIR UNITS, 259 REFERENCES, 260 VNI FILM
DEPOSITION 265 VIII. 1 INCIDENT FLUX AND FILM DEPOSITION RATE, 267 THE
INCIDENT FLUX AT THE SUBSTRATE, 267 FILM DEPOSITION RATE, 269 ASSOCIATED
SUBSTRATE HEATING MECHANISMS, 272 VIII.2 FILM THICKNESS PROFILES OF THE
IDEAL SMALL SOURCE, 277 THREE FUNDAMENTAL RECEIVING SURFACES, 277 THE
MOVING-SHUTTER TECHNIQUE, 278 VIII.3 THERMALIZATION AND IONIZATION OF
THE SPUTTERED BEAM, 281 THE THERMALIZATION DISTANCE, 283 CONTENTS **
REDUCTION OF THE INCIDENT FLUX, 283 IONIZED PHYSICAL VAPOR DEPOSITION,
286 VIII.4 DEPOSITION WITH SUBSTRATE ROTATION AND WITH IDEAL LARGE
SOURCES, 289 OFF-AXIS SUBSTRATE ROTATION, 290 A LARGE DISK SOURCE WITH A
PLANAR SUBSTRATE, 291 A LARGE RING SOURCE, 293 VIII.5 DEPOSITION
MONITORS, 295 THE QUARTZ CRYSTAL MICROBALANCE, 295 TRUE FLUX SENSORS,
298 VIII.6 SUMMARY OF PRINCIPAL EQUATIONS, 300 VIII.7 APPENDIX: SOME
DEFINITE INTEGRALS, 300 VIII. 8 MATHEMATICAL SYMBOLS, CONSTANTS, AND
THEIR UNITS, 301 REFERENCES, 302 INDEX 305
|
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| indexdate | 2024-07-09T18:39:23Z |
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| isbn | 0471330019 |
| language | English |
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| spelling | Mahan, John E. Verfasser aut Physical vapor deposition of thin films John E. Mahan New York [u.a.] Wiley 2000 XIII, 312 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier A Wiley-Interscience publication Vapor-plating Physical vapor deposition Thin films PVD-Verfahren (DE-588)4115673-0 gnd rswk-swf PVD-Verfahren (DE-588)4115673-0 s DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008937694&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Mahan, John E. Physical vapor deposition of thin films Vapor-plating Physical vapor deposition Thin films PVD-Verfahren (DE-588)4115673-0 gnd |
| subject_GND | (DE-588)4115673-0 |
| title | Physical vapor deposition of thin films |
| title_auth | Physical vapor deposition of thin films |
| title_exact_search | Physical vapor deposition of thin films |
| title_full | Physical vapor deposition of thin films John E. Mahan |
| title_fullStr | Physical vapor deposition of thin films John E. Mahan |
| title_full_unstemmed | Physical vapor deposition of thin films John E. Mahan |
| title_short | Physical vapor deposition of thin films |
| title_sort | physical vapor deposition of thin films |
| topic | Vapor-plating Physical vapor deposition Thin films PVD-Verfahren (DE-588)4115673-0 gnd |
| topic_facet | Vapor-plating Physical vapor deposition Thin films PVD-Verfahren |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008937694&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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