Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
Berlin
Mensch-und-Buch-Verl.
1999
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| Subjects: | |
| Physical Description: | 144 S. Ill., graph. Darst. |
| ISBN: | 3898200612 |
Staff View
MARC
| LEADER | 00000nam a22000008c 4500 | ||
|---|---|---|---|
| 001 | BV013006145 | ||
| 003 | DE-604 | ||
| 005 | 20170725 | ||
| 007 | t | ||
| 008 | 000118s1999 gw ad|| m||| 00||| eng d | ||
| 016 | 7 | |a 95821008X |2 DE-101 | |
| 020 | |a 3898200612 |9 3-89820-061-2 | ||
| 035 | |a (OCoLC)47980302 | ||
| 035 | |a (DE-599)BVBBV013006145 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c DE | ||
| 049 | |a DE-703 |a DE-83 | ||
| 100 | 1 | |a Richter, Eberhard |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors |c vorgelegt von Eberhard Richter |
| 264 | 1 | |a Berlin |b Mensch-und-Buch-Verl. |c 1999 | |
| 300 | |a 144 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Zugl.: Berlin, Techn. Univ., Diss., 1999 | ||
| 650 | 0 | 7 | |a Galliumarsenid |0 (DE-588)4019155-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumphosphid |0 (DE-588)4155879-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOCVD-Verfahren |0 (DE-588)4314628-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterobipolartransistor |0 (DE-588)4254091-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Indiumphosphid |0 (DE-588)4161535-9 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Galliumphosphid |0 (DE-588)4155879-0 |D s |
| 689 | 0 | 1 | |a Indiumphosphid |0 (DE-588)4161535-9 |D s |
| 689 | 0 | 2 | |a Galliumarsenid |0 (DE-588)4019155-2 |D s |
| 689 | 0 | 3 | |a Heterobipolartransistor |0 (DE-588)4254091-4 |D s |
| 689 | 0 | 4 | |a MOCVD-Verfahren |0 (DE-588)4314628-4 |D s |
| 689 | 0 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-008864406 | ||
Record in the Search Index
| _version_ | 1804127707894644736 |
|---|---|
| any_adam_object | |
| author | Richter, Eberhard |
| author_facet | Richter, Eberhard |
| author_role | aut |
| author_sort | Richter, Eberhard |
| author_variant | e r er |
| building | Verbundindex |
| bvnumber | BV013006145 |
| ctrlnum | (OCoLC)47980302 (DE-599)BVBBV013006145 |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01601nam a22004338c 4500</leader><controlfield tag="001">BV013006145</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20170725 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">000118s1999 gw ad|| m||| 00||| eng d</controlfield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">95821008X</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3898200612</subfield><subfield code="9">3-89820-061-2</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)47980302</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV013006145</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Richter, Eberhard</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors</subfield><subfield code="c">vorgelegt von Eberhard Richter</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin</subfield><subfield code="b">Mensch-und-Buch-Verl.</subfield><subfield code="c">1999</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">144 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: Berlin, Techn. Univ., Diss., 1999</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumarsenid</subfield><subfield code="0">(DE-588)4019155-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumphosphid</subfield><subfield code="0">(DE-588)4155879-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOCVD-Verfahren</subfield><subfield code="0">(DE-588)4314628-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heterobipolartransistor</subfield><subfield code="0">(DE-588)4254091-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Indiumphosphid</subfield><subfield code="0">(DE-588)4161535-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Galliumphosphid</subfield><subfield code="0">(DE-588)4155879-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Indiumphosphid</subfield><subfield code="0">(DE-588)4161535-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Galliumarsenid</subfield><subfield code="0">(DE-588)4019155-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Heterobipolartransistor</subfield><subfield code="0">(DE-588)4254091-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">MOCVD-Verfahren</subfield><subfield code="0">(DE-588)4314628-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-008864406</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV013006145 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:37:38Z |
| institution | BVB |
| isbn | 3898200612 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008864406 |
| oclc_num | 47980302 |
| open_access_boolean | |
| owner | DE-703 DE-83 |
| owner_facet | DE-703 DE-83 |
| physical | 144 S. Ill., graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| publisher | Mensch-und-Buch-Verl. |
| record_format | marc |
| spelling | Richter, Eberhard Verfasser aut Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors vorgelegt von Eberhard Richter Berlin Mensch-und-Buch-Verl. 1999 144 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Zugl.: Berlin, Techn. Univ., Diss., 1999 Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Galliumphosphid (DE-588)4155879-0 gnd rswk-swf MOCVD-Verfahren (DE-588)4314628-4 gnd rswk-swf Heterobipolartransistor (DE-588)4254091-4 gnd rswk-swf Indiumphosphid (DE-588)4161535-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumphosphid (DE-588)4155879-0 s Indiumphosphid (DE-588)4161535-9 s Galliumarsenid (DE-588)4019155-2 s Heterobipolartransistor (DE-588)4254091-4 s MOCVD-Verfahren (DE-588)4314628-4 s DE-604 |
| spellingShingle | Richter, Eberhard Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors Galliumarsenid (DE-588)4019155-2 gnd Galliumphosphid (DE-588)4155879-0 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Indiumphosphid (DE-588)4161535-9 gnd |
| subject_GND | (DE-588)4019155-2 (DE-588)4155879-0 (DE-588)4314628-4 (DE-588)4254091-4 (DE-588)4161535-9 (DE-588)4113937-9 |
| title | Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors |
| title_auth | Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors |
| title_exact_search | Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors |
| title_full | Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors vorgelegt von Eberhard Richter |
| title_fullStr | Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors vorgelegt von Eberhard Richter |
| title_full_unstemmed | Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors vorgelegt von Eberhard Richter |
| title_short | Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors |
| title_sort | metal organic vapour phase epitaxy for gainp gaas heterojunction bipolar transistors |
| topic | Galliumarsenid (DE-588)4019155-2 gnd Galliumphosphid (DE-588)4155879-0 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Indiumphosphid (DE-588)4161535-9 gnd |
| topic_facet | Galliumarsenid Galliumphosphid MOCVD-Verfahren Heterobipolartransistor Indiumphosphid Hochschulschrift |
| work_keys_str_mv | AT richtereberhard metalorganicvapourphaseepitaxyforgainpgaasheterojunctionbipolartransistors |