Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin
Mensch-und-Buch-Verl.
1999
|
| Schlagworte: | |
| Beschreibung: | 144 S. Ill., graph. Darst. |
| ISBN: | 3898200612 |
Internformat
MARC
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| 100 | 1 | |a Richter, Eberhard |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors |c vorgelegt von Eberhard Richter |
| 264 | 1 | |a Berlin |b Mensch-und-Buch-Verl. |c 1999 | |
| 300 | |a 144 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Zugl.: Berlin, Techn. Univ., Diss., 1999 | ||
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| 650 | 0 | 7 | |a MOCVD-Verfahren |0 (DE-588)4314628-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterobipolartransistor |0 (DE-588)4254091-4 |2 gnd |9 rswk-swf |
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Datensatz im Suchindex
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| author | Richter, Eberhard |
| author_facet | Richter, Eberhard |
| author_role | aut |
| author_sort | Richter, Eberhard |
| author_variant | e r er |
| building | Verbundindex |
| bvnumber | BV013006145 |
| ctrlnum | (OCoLC)47980302 (DE-599)BVBBV013006145 |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV013006145 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:37:38Z |
| institution | BVB |
| isbn | 3898200612 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008864406 |
| oclc_num | 47980302 |
| open_access_boolean | |
| owner | DE-703 DE-83 |
| owner_facet | DE-703 DE-83 |
| physical | 144 S. Ill., graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| publisher | Mensch-und-Buch-Verl. |
| record_format | marc |
| spelling | Richter, Eberhard Verfasser aut Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors vorgelegt von Eberhard Richter Berlin Mensch-und-Buch-Verl. 1999 144 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Zugl.: Berlin, Techn. Univ., Diss., 1999 Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Galliumphosphid (DE-588)4155879-0 gnd rswk-swf MOCVD-Verfahren (DE-588)4314628-4 gnd rswk-swf Heterobipolartransistor (DE-588)4254091-4 gnd rswk-swf Indiumphosphid (DE-588)4161535-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumphosphid (DE-588)4155879-0 s Indiumphosphid (DE-588)4161535-9 s Galliumarsenid (DE-588)4019155-2 s Heterobipolartransistor (DE-588)4254091-4 s MOCVD-Verfahren (DE-588)4314628-4 s DE-604 |
| spellingShingle | Richter, Eberhard Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors Galliumarsenid (DE-588)4019155-2 gnd Galliumphosphid (DE-588)4155879-0 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Indiumphosphid (DE-588)4161535-9 gnd |
| subject_GND | (DE-588)4019155-2 (DE-588)4155879-0 (DE-588)4314628-4 (DE-588)4254091-4 (DE-588)4161535-9 (DE-588)4113937-9 |
| title | Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors |
| title_auth | Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors |
| title_exact_search | Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors |
| title_full | Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors vorgelegt von Eberhard Richter |
| title_fullStr | Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors vorgelegt von Eberhard Richter |
| title_full_unstemmed | Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors vorgelegt von Eberhard Richter |
| title_short | Metal organic vapour phase epitaxy for GaInP GaAs heterojunction bipolar transistors |
| title_sort | metal organic vapour phase epitaxy for gainp gaas heterojunction bipolar transistors |
| topic | Galliumarsenid (DE-588)4019155-2 gnd Galliumphosphid (DE-588)4155879-0 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Indiumphosphid (DE-588)4161535-9 gnd |
| topic_facet | Galliumarsenid Galliumphosphid MOCVD-Verfahren Heterobipolartransistor Indiumphosphid Hochschulschrift |
| work_keys_str_mv | AT richtereberhard metalorganicvapourphaseepitaxyforgainpgaasheterojunctionbipolartransistors |