Holdings: Advances in scanning probe microscopy

Advances in scanning probe microscopy:

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Bibliographic Details
Format:	Book
Language:	English
Published:	Berlin ; Heidelberg ; New York ; Barcelona ; Budapest ; Hong Kon Springer 2000
Series:	Advances in materials research 2
Subjects:	Scanning probe microscopy Rastersondenmikroskopie
Online Access:	Inhaltsverzeichnis
Physical Description:	XIV, 341 S. zahlr. Ill., graph. Darst.
ISBN:	3540667180

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MARC


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Record in the Search Index

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adam_text	. SAKURAI Y. WATANABE (EDS.) ADVANCES IN SCANNING PROBE MICROSCOPY WITH 241 FIGURES SPRINGER CONTENTS 1 THEORY OF SCANNING PROBE MICROSCOPY NARUO SASAKI AND MASARU TSUKADA 1 1.1 INTRODUCTION 1 1.2 SCANNING TUNNELING MICROSCOPY 3 1.3 FRICTIONAL FORCE MICROSCOPY 9 1.4 DYNAMIC-MODE ATOMIC FORCE MICROSCOPY 21 1.5 NON-CONTACT MODE ATOMIC FORCE MICROSCOPY 31 1.6 CONCLUSION 38 REFERENCES 40 2 THE THEORETICAL BASIS OF SCANNING TUNNELING MICROSCOPY FOR SEMICONDUCTORS FIRST-PRINCIPLES ELECTRONIC STRUCTURE THEORY FOR SEMICONDUCTOR SURFACES TAKAHISA OHNO 43 2.1 INTRODUCTION 43 2.2 COMPUTATIONAL METHODS 44 2.3 SURFACE STRUCTURES 47 2.4 SURFACE DYNAMICS 53 REFERENCES 63 3 ATOMIC STRUCTURE OF 6H-SIC (0001) AND (0001) L. LI AND T. SAKURAI 65 3.1 INTRODUCTION 65 3.2 SURFACE PREPARATION 67 3.3 SURFACE STRUCTURE OF 6H-SIC (0001) AND (0001) 68 3.4 SURFACE PHONONS OF 6H-SIC (0001) 82 3.5 EFFECT OF SURFACE POLARITY FOR GALLIUM ADSORPTION ONTO 6H-SIC SURFACES 84 3.6 CONCLUSIONS 88 REFERENCES 89 X CONTENTS 4 APPLICATION OF ATOM MANIPULATION FOR FABRICATING NANOSCALE AND ATOMIC-SCALE STRUCTURES ON SI SURFACES . HASHIZUME, S. HEIKE, . HITOSUGI AND K. KITAZAWA 91 4.1 INTRODUCTION 91 4.2 EXPERIMENTAL ASPECTS 93 4.3 PROPERTY CHANGES IN THE SI(LLL)-7X7 SURFACE 94 4.4 PROPERTIES OF DANGLING BONDS ON THE SI(100)-2XL-H SURFACE 99 4.5 INTERACTION OF ADSORBATES WITH DANGLING BONDS ON SI(100)-2XL-H SURFACES AND ATOMIC WIRE FABRICATION 106 4.6 CONCLUSION ILL REFERENCES ILL 5 THEORETICAL INSIGHTS INTO FUUERENES ADSORBED ON SURFACES: COMPARISON WITH STM STUDIES KAORU OHNO AND YOSHIYUKI KAWAZOE 113 5.1 INTRODUCTION 113 5.2 FULLERENE RESEARCH BACKGROUND 115 5.3 UNIVERSAL FEATURES OF ** AND C70 STM IMAGES 117 5.4 DIPOLE FIELD CAUSED BY CHARGE TRANSFER 124 5.5 PHOTO-INDUCED EXCITED STATES 129 5.6 CONCLUSION 135 APPENDIX: ALL-ELECTRON MIXED BASIS APPROACH 136 REFERENCES 139 6 APPARENT BARRIER HEIGHT AND BARRIER-HEIGHT IMAGING OF SURFACES AKIRA SAKAI 143 6.1 INTRODUCTION 143 6.2 PROPERTIES OF BARRIER HEIGHT 145 6.3 MEASUREMENTS OF BARRIER HEIGHT 153 6.4 BARRIER-HEIGHT IMAGING 155 6.5 APPLICATIONS OF BH IMAGING 158 REFERENCES 163 7 MESOSCOPIC WORK FUNCTION MEASUREMENT BY SCANNING TUNNELING MICROSCOPY Y. HASEGAWA, J.F. JIA, T. SAKURAI, Z.Q. LI, K. OHNO AND Y. KAWAZOE . 167 7.1 INTRODUCTION 167 7.2 WORK FUNCTION 168 7.3 EXPERIMENTAL TECHNIQUES 174 7.4 RESULTS 179 7.5 CONCLUSION 190 REFERENCES 190 CONTENTS XI 8 SCANNING TUNNELING MICROSCOPY OF III-V COMPOUND SEMICONDUCTOR (001) SURFACES QI-KUN XUE, T. HASHIZUME AND T. SAKURAI 193 8.1 INTRODUCTION 193 8.2 SEMICONDUCTOR SURFACE RECONSTRUCTION 195 8.3 GAAS(OOL) AS-RICH SURFACE 200 8.4 GAAS(OOL) GA-RICH SURFACE 227 8.5 OTHER ARSENIDE (001) SURFACES 243 8.6 PHOSPHIDE, ANTIMONIDE AND NITRIDE (001) SURFACES 261 8.7 CONCLUSIONS 273 REFERENCES 276 9 ADSORPTION OF FULLERENES ON SEMICONDUCTOR AND METAL SURFACES INVESTIGATED BY FIELD-ION SCANNING TUNNELING MICROSCOPY T. HASHIZUME AND T. SAKURAI 283 9.1 INTRODUCTION 283 9.2 EXPERIMENT 285 9.3 RESULTS AND DISCUSSIONS ON SEMICONDUCTOR SUBSTRATES 288 9.4 RESULTS AND DISCUSSIONS ON METAL SUBSTRATES 313 9.5 CONCLUSIONS 332 REFERENCES 333 INDEX 339
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indexdate	2024-07-09T18:37:08Z
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isbn	3540667180
language	English
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physical	XIV, 341 S. zahlr. Ill., graph. Darst.
publishDate	2000
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series	Advances in materials research
series2	Advances in materials research
spelling	Advances in scanning probe microscopy T. Sakurai ... (ed.) Berlin ; Heidelberg ; New York ; Barcelona ; Budapest ; Hong Kon Springer 2000 XIV, 341 S. zahlr. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Advances in materials research 2 Scanning probe microscopy Rastersondenmikroskopie (DE-588)4330328-6 gnd rswk-swf Rastersondenmikroskopie (DE-588)4330328-6 s DE-604 Sakurai, Toshio Sonstige oth Advances in materials research 2 (DE-604)BV012271346 2 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008843228&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Advances in scanning probe microscopy Advances in materials research Scanning probe microscopy Rastersondenmikroskopie (DE-588)4330328-6 gnd
subject_GND	(DE-588)4330328-6
title	Advances in scanning probe microscopy
title_auth	Advances in scanning probe microscopy
title_exact_search	Advances in scanning probe microscopy
title_full	Advances in scanning probe microscopy T. Sakurai ... (ed.)
title_fullStr	Advances in scanning probe microscopy T. Sakurai ... (ed.)
title_full_unstemmed	Advances in scanning probe microscopy T. Sakurai ... (ed.)
title_short	Advances in scanning probe microscopy
title_sort	advances in scanning probe microscopy
topic	Scanning probe microscopy Rastersondenmikroskopie (DE-588)4330328-6 gnd
topic_facet	Scanning probe microscopy Rastersondenmikroskopie
url	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008843228&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
volume_link	(DE-604)BV012271346
work_keys_str_mv	AT sakuraitoshio advancesinscanningprobemicroscopy

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