Selektive metallorganische Molekularstrahlepitaxie von InP und InGaAs für Heterobipolartransistor-Anwendungen:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Abschlussarbeit Buch |
| Sprache: | German |
| Veröffentlicht: |
1999
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | II, 197 S. Ill., graph. Darst. |
Internformat
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| 100 | 1 | |a Schelhase, Stefan |d 1966- |e Verfasser |0 (DE-588)121762351 |4 aut | |
| 245 | 1 | 0 | |a Selektive metallorganische Molekularstrahlepitaxie von InP und InGaAs für Heterobipolartransistor-Anwendungen |c von Stefan Schelhase |
| 264 | 1 | |c 1999 | |
| 300 | |a II, 197 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Berlin, Techn. Univ., Diss., 1999 | ||
| 650 | 0 | 7 | |a Indiumarsenid |0 (DE-588)4249718-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumarsenid |0 (DE-588)4019155-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterobipolartransistor |0 (DE-588)4254091-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOMBE |0 (DE-588)4338599-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Mischkristall |0 (DE-588)4170112-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Indiumphosphid |0 (DE-588)4161535-9 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Heterobipolartransistor |0 (DE-588)4254091-4 |D s |
| 689 | 0 | 1 | |a Indiumphosphid |0 (DE-588)4161535-9 |D s |
| 689 | 0 | 2 | |a MOMBE |0 (DE-588)4338599-0 |D s |
| 689 | 0 | |5 DE-604 | |
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| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008826868&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-008826868 | ||
Datensatz im Suchindex
| _version_ | 1804127653899272192 |
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| any_adam_object | 1 |
| author | Schelhase, Stefan 1966- |
| author_GND | (DE-588)121762351 |
| author_facet | Schelhase, Stefan 1966- |
| author_role | aut |
| author_sort | Schelhase, Stefan 1966- |
| author_variant | s s ss |
| building | Verbundindex |
| bvnumber | BV012960346 |
| classification_tum | ELT 280d PHY 693d ELT 315d |
| ctrlnum | (OCoLC)247127931 (DE-599)BVBBV012960346 |
| discipline | Physik Elektrotechnik |
| format | Thesis Book |
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| id | DE-604.BV012960346 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:36:47Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008826868 |
| oclc_num | 247127931 |
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| owner | DE-91 DE-BY-TUM DE-29T DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-29T DE-83 |
| physical | II, 197 S. Ill., graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| record_format | marc |
| spelling | Schelhase, Stefan 1966- Verfasser (DE-588)121762351 aut Selektive metallorganische Molekularstrahlepitaxie von InP und InGaAs für Heterobipolartransistor-Anwendungen von Stefan Schelhase 1999 II, 197 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Berlin, Techn. Univ., Diss., 1999 Indiumarsenid (DE-588)4249718-8 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Heterobipolartransistor (DE-588)4254091-4 gnd rswk-swf MOMBE (DE-588)4338599-0 gnd rswk-swf Mischkristall (DE-588)4170112-4 gnd rswk-swf Indiumphosphid (DE-588)4161535-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Heterobipolartransistor (DE-588)4254091-4 s Indiumphosphid (DE-588)4161535-9 s MOMBE (DE-588)4338599-0 s DE-604 Indiumarsenid (DE-588)4249718-8 s Galliumarsenid (DE-588)4019155-2 s Mischkristall (DE-588)4170112-4 s DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008826868&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Schelhase, Stefan 1966- Selektive metallorganische Molekularstrahlepitaxie von InP und InGaAs für Heterobipolartransistor-Anwendungen Indiumarsenid (DE-588)4249718-8 gnd Galliumarsenid (DE-588)4019155-2 gnd Heterobipolartransistor (DE-588)4254091-4 gnd MOMBE (DE-588)4338599-0 gnd Mischkristall (DE-588)4170112-4 gnd Indiumphosphid (DE-588)4161535-9 gnd |
| subject_GND | (DE-588)4249718-8 (DE-588)4019155-2 (DE-588)4254091-4 (DE-588)4338599-0 (DE-588)4170112-4 (DE-588)4161535-9 (DE-588)4113937-9 |
| title | Selektive metallorganische Molekularstrahlepitaxie von InP und InGaAs für Heterobipolartransistor-Anwendungen |
| title_auth | Selektive metallorganische Molekularstrahlepitaxie von InP und InGaAs für Heterobipolartransistor-Anwendungen |
| title_exact_search | Selektive metallorganische Molekularstrahlepitaxie von InP und InGaAs für Heterobipolartransistor-Anwendungen |
| title_full | Selektive metallorganische Molekularstrahlepitaxie von InP und InGaAs für Heterobipolartransistor-Anwendungen von Stefan Schelhase |
| title_fullStr | Selektive metallorganische Molekularstrahlepitaxie von InP und InGaAs für Heterobipolartransistor-Anwendungen von Stefan Schelhase |
| title_full_unstemmed | Selektive metallorganische Molekularstrahlepitaxie von InP und InGaAs für Heterobipolartransistor-Anwendungen von Stefan Schelhase |
| title_short | Selektive metallorganische Molekularstrahlepitaxie von InP und InGaAs für Heterobipolartransistor-Anwendungen |
| title_sort | selektive metallorganische molekularstrahlepitaxie von inp und ingaas fur heterobipolartransistor anwendungen |
| topic | Indiumarsenid (DE-588)4249718-8 gnd Galliumarsenid (DE-588)4019155-2 gnd Heterobipolartransistor (DE-588)4254091-4 gnd MOMBE (DE-588)4338599-0 gnd Mischkristall (DE-588)4170112-4 gnd Indiumphosphid (DE-588)4161535-9 gnd |
| topic_facet | Indiumarsenid Galliumarsenid Heterobipolartransistor MOMBE Mischkristall Indiumphosphid Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008826868&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT schelhasestefan selektivemetallorganischemolekularstrahlepitaxievoninpundingaasfurheterobipolartransistoranwendungen |