Failure mechanisms in semiconductor devices:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Chichester [u.a.]
Wiley
1998
|
| Ausgabe: | 2. ed., repr. |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XII, 345 S. Ill., graph. Darst. |
| ISBN: | 0471954829 |
Internformat
MARC
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| 100 | 1 | |a Amerasekera, Ajith |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Failure mechanisms in semiconductor devices |c E. Ajith Amerasekera ; Farid N. Najm |
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| 264 | 1 | |a Chichester [u.a.] |b Wiley |c 1998 | |
| 300 | |a XII, 345 S. |b Ill., graph. Darst. | ||
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Datensatz im Suchindex
| _version_ | 1804127636532756480 |
|---|---|
| adam_text | Contents
Preface xi
1 INTRODUCTION 1
1.1 Introduction 1
References 5
2 RELIABILITY MATHEMATICS 7
2.1 Introduction 7
2.2 Review of Probability Theory 8
2.3 Reliability Measures 29
2.4 Aging Trends 41
2.5 Memoryless Systems 50
2.6 Time To Failure Distributions 52
References 65
Bibliography 66
3 PRINCIPAL FAILURE MECHANISMS 67
3.1 Introduction 67
3.2 Electrical Stress (In Circuit) Failures 69
3.2.1 Electrical Overstress (EOS) 71
3.2.2 Electrostatic Discharge (ESD) 72
3.2.3 Latchup 77
3.3 Gate Oxide Breakdown 81
3.4 Ionic Contamination 87
3.5 Surface Charge Effects on Isolation 91
3.6 Charge Effects and I V Instability 92
3.6.1 Slow Trapping 93
3.6.2 Hot Carriers 94
3.6.3 Plasma Damage 99
3.7 Dislocations and Crystalline Defects 100
3.8 Piping 102
vii
viii Contents
3.9 Metallization Issues 103
3.9.1 Introduction 103
3.9.2 Electromigration 103
3.10 Contact Migration 106
3.11 Via Migration 108
3.12 Microcracks and Step Coverage 109
3.13 Stress Induced Migration 110
3.14 Package and Assembly 111
3.14.1 Introduction 111
3.14.2 Die Attach Failures 113
3.14.3 Bonding Failures 116
3.14.4 Delamination and the Popcorn Effect 121
3.14.5 Corrosion 123
3.15 Soft Errors 125
3.15.1 External Radiation 125
3.15.2 Intrinsic Radiation 127
3.16 Storage Reliability 132
References 133
4 FAILURE MECHANISMS IN TECHNOLOGIES
AND CIRCUITS 153
4.1 Introduction 153
4.2 MOS Devices 154
4.2.1 PMOS, NMOS and CMOS 154
4.2.2 Power MOS Devices 158
4.2.3 Read Only Memories (ROMS) 161
4.2.4 Field Programmable Gate Arrays 165
4.3 Bipolar Devices 166
4.4 Diodes 170
4.5 Thyristors (SCRs) 171
4.6 Microprocessors 172
4.7 Gallium Arsenide Devices 174
4.7.1 Introduction 174
4.7.2 MESFETs and HEMTs 175
4.7.3 HBTs 179
4.8 Optoelectronic Devices 181
4.8.1 Light Emitting Diodes and Laser Diodes 181
4.9 Photovoltaic Devices 183
References 185
5 RELIABILITY TESTING 193
5.1 Introduction 193
5.2 Reliability Bounds 194
5.2.1 Case 1 195
5.2.2 Case 2 195
Contents jx
5.3 Aging Trend Identification 198
5.4 Goodness of Fit Methods 201
5.4.1 Graphical Goodness of Fit Methods 202
5.4.1.1 Ranking the Data 203
5.4.1.2 Generating the Plot 208
5.4.1.3 Graphical Confidence Bands 214
5.4.1.4 Censored Data 217
5.4.2 Analytical Goodness of Fit Methods 220
5.4.2.1 Parameter Estimation 220
5.4.2.2 Checking the Fit 235
5.5 Constructive Methods for Estimating the Distribution 244
5.6 Stress Testing 246
5.6.1 The Stress Strength Model 249
5.6.1.1 Static Stress Strength Analysis 252
5.6.1.2 Dynamic Stress Strength Analysis 254
5.6.2 Accelerated Testing 254
5.6.2.1 The Damage Accumulation Model 257
5.6.2.2 Implementing Accelerated Testing
Bibliography 262
6 RELIABILITY PREDICTION 263
6.1 Introduction 263
6.1.1 Failure Rate Methods 264
6.1.2 Physics of Failure Methods 265
6.2 Failure Rate Methods 265
6.3 Limitations of the Failure Rate Methods 272
6.3.1 Non Electrical Non Component Failures 273
6.3.2 The CFR Assumption 274
6.3.3 Component Use 275
6.4 Physics of Failure Methods 276
Bibliography 280
7 SCREENING 281
7.1 Introduction 281
7.2 Stress Test 281
7.2.1 Main Tests 282
7.2.2 The MIL STD 833 S Level Process 285
7.2.3 The Application of Screening Tests To Failure
Mechanisms 285
7.2.4 Planning a Burn In Test 286
7.3 Operational (Functional) Test 293
7.4 Issues Related to Screening 294
References 296
Bibliography 297
x Contents
8 FAILURE ANALYSIS 299
8.1 Introduction 299
8.2 Approach 299
8.3 FA Techniques 300
8.4 Product Level FA 305
8.4.1 Background 305
8.4.2 Microprocessors 305
8.4.3 Logic Products 305
8.4.4 Mixed Signal Products 306
8.4.5 Memory Products 306
8.5 FA Tools 307
8.5.1 Liquid Crystal Analysis 307
8.5.2 Photon Emission Microscopy 308
8.5.3 Scanning Electron Microscopy (SEM) 309
8.5.4 Transmission Electron Microscopy 311
8.5.5 Scanning Acoustic Microscopy 311
8.5.6 Focused Ion Beam (FIB) 311
8.5.7 X Ray Microscopy 312
8.5.8 Optical Microscopy 313
8.5.9 Other Structural Analysis Techniques 314
References 316
9 QUALITY ASSURANCE 319
9.1 Introduction 319
9.2 The Philosophy of Quality Assurance 319
9.3 Achieving Quality 320
9.4 Quality and the Manufacturing Process 323
9.5 Conclusions 326
References 326
APPENDIX A STATISTICAL TABLES 329
Author Index 333
Subject Index 339
|
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| id | DE-604.BV012945445 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:36:30Z |
| institution | BVB |
| isbn | 0471954829 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008814617 |
| oclc_num | 636544828 |
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| owner | DE-1050 DE-29T |
| owner_facet | DE-1050 DE-29T |
| physical | XII, 345 S. Ill., graph. Darst. |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| publisher | Wiley |
| record_format | marc |
| spelling | Amerasekera, Ajith Verfasser aut Failure mechanisms in semiconductor devices E. Ajith Amerasekera ; Farid N. Najm 2. ed., repr. Chichester [u.a.] Wiley 1998 XII, 345 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Störstelle (DE-588)4193400-3 gnd rswk-swf Defekt (DE-588)4202158-3 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s Defekt (DE-588)4202158-3 s DE-604 Störstelle (DE-588)4193400-3 s 1\p DE-604 Najm, Farid N. Verfasser aut HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008814617&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Amerasekera, Ajith Najm, Farid N. Failure mechanisms in semiconductor devices Störstelle (DE-588)4193400-3 gnd Defekt (DE-588)4202158-3 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| subject_GND | (DE-588)4193400-3 (DE-588)4202158-3 (DE-588)4113826-0 |
| title | Failure mechanisms in semiconductor devices |
| title_auth | Failure mechanisms in semiconductor devices |
| title_exact_search | Failure mechanisms in semiconductor devices |
| title_full | Failure mechanisms in semiconductor devices E. Ajith Amerasekera ; Farid N. Najm |
| title_fullStr | Failure mechanisms in semiconductor devices E. Ajith Amerasekera ; Farid N. Najm |
| title_full_unstemmed | Failure mechanisms in semiconductor devices E. Ajith Amerasekera ; Farid N. Najm |
| title_short | Failure mechanisms in semiconductor devices |
| title_sort | failure mechanisms in semiconductor devices |
| topic | Störstelle (DE-588)4193400-3 gnd Defekt (DE-588)4202158-3 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| topic_facet | Störstelle Defekt Halbleiterbauelement |
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