Atomic transport during growth of ultrathin dielectrics on silicon:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Amsterdam [u.a.]
Elsevier
1999
|
| Schriftenreihe: | Surface science reports
36,1/8 |
| Schlagworte: | |
| Beschreibung: | Einzelaufnahme eines Zeitschr.-H. |
| Beschreibung: | 166 S. graph. Darst. |
Internformat
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| 100 | 1 | |a Baumvol, I. J. R. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Atomic transport during growth of ultrathin dielectrics on silicon |c I. J. R. Baumvol |
| 264 | 1 | |a Amsterdam [u.a.] |b Elsevier |c 1999 | |
| 300 | |a 166 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Surface science reports |v 36,1/8 | |
| 500 | |a Einzelaufnahme eines Zeitschr.-H. | ||
| 650 | 7 | |a Couches diélectriques |2 ram | |
| 650 | 7 | |a Cristaux - Croissance |2 ram | |
| 650 | 7 | |a Nitruration |2 ram | |
| 650 | 7 | |a Nitrure de silicium |2 ram | |
| 650 | 7 | |a Silicium - Couches minces |2 ram | |
| 650 | 7 | |a Silicium - Substrats |2 ram | |
| 650 | 7 | |a Surfaces (physique) |2 ram | |
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Datensatz im Suchindex
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| any_adam_object | |
| author | Baumvol, I. J. R. |
| author_facet | Baumvol, I. J. R. |
| author_role | aut |
| author_sort | Baumvol, I. J. R. |
| author_variant | i j r b ijr ijrb |
| building | Verbundindex |
| bvnumber | BV012902192 |
| ctrlnum | (OCoLC)43843315 (DE-599)BVBBV012902192 |
| dewey-full | 530.4175 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 530 - Physics |
| dewey-raw | 530.417 5 |
| dewey-search | 530.417 5 |
| dewey-sort | 3530.417 15 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| format | Book |
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| id | DE-604.BV012902192 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:35:43Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008781277 |
| oclc_num | 43843315 |
| open_access_boolean | |
| owner | DE-29T |
| owner_facet | DE-29T |
| physical | 166 S. graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| publisher | Elsevier |
| record_format | marc |
| series2 | Surface science reports |
| spelling | Baumvol, I. J. R. Verfasser aut Atomic transport during growth of ultrathin dielectrics on silicon I. J. R. Baumvol Amsterdam [u.a.] Elsevier 1999 166 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Surface science reports 36,1/8 Einzelaufnahme eines Zeitschr.-H. Couches diélectriques ram Cristaux - Croissance ram Nitruration ram Nitrure de silicium ram Silicium - Couches minces ram Silicium - Substrats ram Surfaces (physique) ram Transport atome - @Surface science reports ULSI (DE-588)4226286-0 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Dielektrische Schicht (DE-588)4194257-7 gnd rswk-swf SOI-Technik (DE-588)4128029-5 gnd rswk-swf MOS-FET (DE-588)4207266-9 s ULSI (DE-588)4226286-0 s Dielektrische Schicht (DE-588)4194257-7 s SOI-Technik (DE-588)4128029-5 s DE-604 |
| spellingShingle | Baumvol, I. J. R. Atomic transport during growth of ultrathin dielectrics on silicon Couches diélectriques ram Cristaux - Croissance ram Nitruration ram Nitrure de silicium ram Silicium - Couches minces ram Silicium - Substrats ram Surfaces (physique) ram Transport atome - @Surface science reports ULSI (DE-588)4226286-0 gnd MOS-FET (DE-588)4207266-9 gnd Dielektrische Schicht (DE-588)4194257-7 gnd SOI-Technik (DE-588)4128029-5 gnd |
| subject_GND | (DE-588)4226286-0 (DE-588)4207266-9 (DE-588)4194257-7 (DE-588)4128029-5 |
| title | Atomic transport during growth of ultrathin dielectrics on silicon |
| title_auth | Atomic transport during growth of ultrathin dielectrics on silicon |
| title_exact_search | Atomic transport during growth of ultrathin dielectrics on silicon |
| title_full | Atomic transport during growth of ultrathin dielectrics on silicon I. J. R. Baumvol |
| title_fullStr | Atomic transport during growth of ultrathin dielectrics on silicon I. J. R. Baumvol |
| title_full_unstemmed | Atomic transport during growth of ultrathin dielectrics on silicon I. J. R. Baumvol |
| title_short | Atomic transport during growth of ultrathin dielectrics on silicon |
| title_sort | atomic transport during growth of ultrathin dielectrics on silicon |
| topic | Couches diélectriques ram Cristaux - Croissance ram Nitruration ram Nitrure de silicium ram Silicium - Couches minces ram Silicium - Substrats ram Surfaces (physique) ram Transport atome - @Surface science reports ULSI (DE-588)4226286-0 gnd MOS-FET (DE-588)4207266-9 gnd Dielektrische Schicht (DE-588)4194257-7 gnd SOI-Technik (DE-588)4128029-5 gnd |
| topic_facet | Couches diélectriques Cristaux - Croissance Nitruration Nitrure de silicium Silicium - Couches minces Silicium - Substrats Surfaces (physique) Transport atome - @Surface science reports ULSI MOS-FET Dielektrische Schicht SOI-Technik |
| work_keys_str_mv | AT baumvolijr atomictransportduringgrowthofultrathindielectricsonsilicon |