Infos '99: proceedings of the 11th Biennial Conference on Insulating Films on Semiconductors, June 16 - 19, 1999, Kloster Banz, Germany
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Amsterdam [u.a.]
1999
|
| Schriftenreihe: | Microelectronic engineering
48 |
| Schlagworte: | |
| Beschreibung: | Einzelaufnahme eines Zeitschr.-H. |
| Beschreibung: | XII, 447 S. graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV012875940 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t | ||
| 008 | 991126s1999 d||| |||| 10||| eng d | ||
| 035 | |a (OCoLC)43039253 | ||
| 035 | |a (DE-599)BVBBV012875940 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-29T | ||
| 050 | 0 | |a TK7874 | |
| 111 | 2 | |a INFOS (Conference on Insulating Films on Semiconductors) |n 11 |d 1999 |c Staffelstein |j Verfasser |0 (DE-588)1901852-6 |4 aut | |
| 245 | 1 | 0 | |a Infos '99 |b proceedings of the 11th Biennial Conference on Insulating Films on Semiconductors, June 16 - 19, 1999, Kloster Banz, Germany |c ed. by Max Schulz ... |
| 246 | 1 | 3 | |a Insulating films on semiconductors |
| 264 | 1 | |a Amsterdam [u.a.] |c 1999 | |
| 300 | |a XII, 447 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Microelectronic engineering |v 48 | |
| 500 | |a Einzelaufnahme eines Zeitschr.-H. | ||
| 650 | 4 | |a Metal insulator semiconductors |v Congresses | |
| 650 | 4 | |a Metal oxide semiconductors |v Congresses | |
| 650 | 0 | 7 | |a Isolierstoff |0 (DE-588)4027786-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumdioxid |0 (DE-588)4077447-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Grenzschicht |0 (DE-588)4022005-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Dünne Schicht |0 (DE-588)4136925-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiteroberfläche |0 (DE-588)4137418-6 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1999 |z Banz |2 gnd-content | |
| 689 | 0 | 0 | |a Isolierstoff |0 (DE-588)4027786-0 |D s |
| 689 | 0 | 1 | |a Dünne Schicht |0 (DE-588)4136925-7 |D s |
| 689 | 0 | 2 | |a Halbleiteroberfläche |0 (DE-588)4137418-6 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 1 | 1 | |a Siliciumdioxid |0 (DE-588)4077447-8 |D s |
| 689 | 1 | 2 | |a Grenzschicht |0 (DE-588)4022005-9 |D s |
| 689 | 1 | |5 DE-604 | |
| 700 | 1 | |a Schulz, Max |e Sonstige |4 oth | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-008764052 | ||
Datensatz im Suchindex
| _version_ | 1804127561123364864 |
|---|---|
| any_adam_object | |
| author_corporate | INFOS (Conference on Insulating Films on Semiconductors) Staffelstein |
| author_corporate_role | aut |
| author_facet | INFOS (Conference on Insulating Films on Semiconductors) Staffelstein |
| author_sort | INFOS (Conference on Insulating Films on Semiconductors) Staffelstein |
| building | Verbundindex |
| bvnumber | BV012875940 |
| callnumber-first | T - Technology |
| callnumber-label | TK7874 |
| callnumber-raw | TK7874 |
| callnumber-search | TK7874 |
| callnumber-sort | TK 47874 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| ctrlnum | (OCoLC)43039253 (DE-599)BVBBV012875940 |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02003nam a2200505 cb4500</leader><controlfield tag="001">BV012875940</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">991126s1999 d||| |||| 10||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)43039253</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV012875940</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7874</subfield></datafield><datafield tag="111" ind1="2" ind2=" "><subfield code="a">INFOS (Conference on Insulating Films on Semiconductors)</subfield><subfield code="n">11</subfield><subfield code="d">1999</subfield><subfield code="c">Staffelstein</subfield><subfield code="j">Verfasser</subfield><subfield code="0">(DE-588)1901852-6</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Infos '99</subfield><subfield code="b">proceedings of the 11th Biennial Conference on Insulating Films on Semiconductors, June 16 - 19, 1999, Kloster Banz, Germany</subfield><subfield code="c">ed. by Max Schulz ...</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Insulating films on semiconductors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Amsterdam [u.a.]</subfield><subfield code="c">1999</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XII, 447 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Microelectronic engineering</subfield><subfield code="v">48</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Einzelaufnahme eines Zeitschr.-H.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal insulator semiconductors</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Isolierstoff</subfield><subfield code="0">(DE-588)4027786-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumdioxid</subfield><subfield code="0">(DE-588)4077447-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Grenzschicht</subfield><subfield code="0">(DE-588)4022005-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiteroberfläche</subfield><subfield code="0">(DE-588)4137418-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1999</subfield><subfield code="z">Banz</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Isolierstoff</subfield><subfield code="0">(DE-588)4027786-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Halbleiteroberfläche</subfield><subfield code="0">(DE-588)4137418-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Siliciumdioxid</subfield><subfield code="0">(DE-588)4077447-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="2"><subfield code="a">Grenzschicht</subfield><subfield code="0">(DE-588)4022005-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Schulz, Max</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-008764052</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1999 Banz gnd-content |
| genre_facet | Konferenzschrift 1999 Banz |
| id | DE-604.BV012875940 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:35:18Z |
| institution | BVB |
| institution_GND | (DE-588)1901852-6 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008764052 |
| oclc_num | 43039253 |
| open_access_boolean | |
| owner | DE-29T |
| owner_facet | DE-29T |
| physical | XII, 447 S. graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| record_format | marc |
| series2 | Microelectronic engineering |
| spelling | INFOS (Conference on Insulating Films on Semiconductors) 11 1999 Staffelstein Verfasser (DE-588)1901852-6 aut Infos '99 proceedings of the 11th Biennial Conference on Insulating Films on Semiconductors, June 16 - 19, 1999, Kloster Banz, Germany ed. by Max Schulz ... Insulating films on semiconductors Amsterdam [u.a.] 1999 XII, 447 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Microelectronic engineering 48 Einzelaufnahme eines Zeitschr.-H. Metal insulator semiconductors Congresses Metal oxide semiconductors Congresses Isolierstoff (DE-588)4027786-0 gnd rswk-swf Siliciumdioxid (DE-588)4077447-8 gnd rswk-swf Grenzschicht (DE-588)4022005-9 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Halbleiteroberfläche (DE-588)4137418-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1999 Banz gnd-content Isolierstoff (DE-588)4027786-0 s Dünne Schicht (DE-588)4136925-7 s Halbleiteroberfläche (DE-588)4137418-6 s DE-604 Silicium (DE-588)4077445-4 s Siliciumdioxid (DE-588)4077447-8 s Grenzschicht (DE-588)4022005-9 s Schulz, Max Sonstige oth |
| spellingShingle | Infos '99 proceedings of the 11th Biennial Conference on Insulating Films on Semiconductors, June 16 - 19, 1999, Kloster Banz, Germany Metal insulator semiconductors Congresses Metal oxide semiconductors Congresses Isolierstoff (DE-588)4027786-0 gnd Siliciumdioxid (DE-588)4077447-8 gnd Grenzschicht (DE-588)4022005-9 gnd Dünne Schicht (DE-588)4136925-7 gnd Silicium (DE-588)4077445-4 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd |
| subject_GND | (DE-588)4027786-0 (DE-588)4077447-8 (DE-588)4022005-9 (DE-588)4136925-7 (DE-588)4077445-4 (DE-588)4137418-6 (DE-588)1071861417 |
| title | Infos '99 proceedings of the 11th Biennial Conference on Insulating Films on Semiconductors, June 16 - 19, 1999, Kloster Banz, Germany |
| title_alt | Insulating films on semiconductors |
| title_auth | Infos '99 proceedings of the 11th Biennial Conference on Insulating Films on Semiconductors, June 16 - 19, 1999, Kloster Banz, Germany |
| title_exact_search | Infos '99 proceedings of the 11th Biennial Conference on Insulating Films on Semiconductors, June 16 - 19, 1999, Kloster Banz, Germany |
| title_full | Infos '99 proceedings of the 11th Biennial Conference on Insulating Films on Semiconductors, June 16 - 19, 1999, Kloster Banz, Germany ed. by Max Schulz ... |
| title_fullStr | Infos '99 proceedings of the 11th Biennial Conference on Insulating Films on Semiconductors, June 16 - 19, 1999, Kloster Banz, Germany ed. by Max Schulz ... |
| title_full_unstemmed | Infos '99 proceedings of the 11th Biennial Conference on Insulating Films on Semiconductors, June 16 - 19, 1999, Kloster Banz, Germany ed. by Max Schulz ... |
| title_short | Infos '99 |
| title_sort | infos 99 proceedings of the 11th biennial conference on insulating films on semiconductors june 16 19 1999 kloster banz germany |
| title_sub | proceedings of the 11th Biennial Conference on Insulating Films on Semiconductors, June 16 - 19, 1999, Kloster Banz, Germany |
| topic | Metal insulator semiconductors Congresses Metal oxide semiconductors Congresses Isolierstoff (DE-588)4027786-0 gnd Siliciumdioxid (DE-588)4077447-8 gnd Grenzschicht (DE-588)4022005-9 gnd Dünne Schicht (DE-588)4136925-7 gnd Silicium (DE-588)4077445-4 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd |
| topic_facet | Metal insulator semiconductors Congresses Metal oxide semiconductors Congresses Isolierstoff Siliciumdioxid Grenzschicht Dünne Schicht Silicium Halbleiteroberfläche Konferenzschrift 1999 Banz |
| work_keys_str_mv | AT infosconferenceoninsulatingfilmsonsemiconductorsstaffelstein infos99proceedingsofthe11thbiennialconferenceoninsulatingfilmsonsemiconductorsjune16191999klosterbanzgermany AT schulzmax infos99proceedingsofthe11thbiennialconferenceoninsulatingfilmsonsemiconductorsjune16191999klosterbanzgermany AT infosconferenceoninsulatingfilmsonsemiconductorsstaffelstein insulatingfilmsonsemiconductors AT schulzmax insulatingfilmsonsemiconductors |