Ferroelectric memories:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin ; Heidelberg ; New York ; Barcelona ; Hong Kong ; London
Springer
2000
|
| Schriftenreihe: | Advanced microelectronics
3 |
| Schlagworte: | |
| Beschreibung: | XVI, 248 S. Ill., graph. Darst. |
| ISBN: | 3540663878 |
Internformat
MARC
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| 035 | |a (OCoLC)42771666 | ||
| 035 | |a (DE-599)BVBBV012861628 | ||
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| 245 | 1 | 0 | |a Ferroelectric memories |c J. F. Scott |
| 264 | 1 | |a Berlin ; Heidelberg ; New York ; Barcelona ; Hong Kong ; London |b Springer |c 2000 | |
| 300 | |a XVI, 248 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 490 | 1 | |a Advanced microelectronics |v 3 | |
| 650 | 4 | |a Ferroelectric storage cells | |
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| 830 | 0 | |a Advanced microelectronics |v 3 |w (DE-604)BV012563021 |9 3 | |
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Datensatz im Suchindex
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|---|---|
| any_adam_object | |
| author | Scott, James F. 1942-2020 |
| author_GND | (DE-588)121472183 |
| author_facet | Scott, James F. 1942-2020 |
| author_role | aut |
| author_sort | Scott, James F. 1942-2020 |
| author_variant | j f s jf jfs |
| building | Verbundindex |
| bvnumber | BV012861628 |
| callnumber-first | T - Technology |
| callnumber-label | TK7895 |
| callnumber-raw | TK7895.M4 |
| callnumber-search | TK7895.M4 |
| callnumber-sort | TK 47895 M4 |
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| ctrlnum | (OCoLC)42771666 (DE-599)BVBBV012861628 |
| dewey-full | 621.39/732 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.39/732 |
| dewey-search | 621.39/732 |
| dewey-sort | 3621.39 3732 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV012861628 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:35:01Z |
| institution | BVB |
| isbn | 3540663878 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008752398 |
| oclc_num | 42771666 |
| open_access_boolean | |
| owner | DE-703 DE-384 DE-634 DE-11 |
| owner_facet | DE-703 DE-384 DE-634 DE-11 |
| physical | XVI, 248 S. Ill., graph. Darst. |
| publishDate | 2000 |
| publishDateSearch | 2000 |
| publishDateSort | 2000 |
| publisher | Springer |
| record_format | marc |
| series | Advanced microelectronics |
| series2 | Advanced microelectronics |
| spelling | Scott, James F. 1942-2020 Verfasser (DE-588)121472183 aut Ferroelectric memories J. F. Scott Berlin ; Heidelberg ; New York ; Barcelona ; Hong Kong ; London Springer 2000 XVI, 248 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Advanced microelectronics 3 Ferroelectric storage cells Speicher Informatik (DE-588)4077653-0 gnd rswk-swf Ferroelektrikum (DE-588)4154121-2 gnd rswk-swf Ferroelektrikum (DE-588)4154121-2 s Speicher Informatik (DE-588)4077653-0 s DE-604 Advanced microelectronics 3 (DE-604)BV012563021 3 |
| spellingShingle | Scott, James F. 1942-2020 Ferroelectric memories Advanced microelectronics Ferroelectric storage cells Speicher Informatik (DE-588)4077653-0 gnd Ferroelektrikum (DE-588)4154121-2 gnd |
| subject_GND | (DE-588)4077653-0 (DE-588)4154121-2 |
| title | Ferroelectric memories |
| title_auth | Ferroelectric memories |
| title_exact_search | Ferroelectric memories |
| title_full | Ferroelectric memories J. F. Scott |
| title_fullStr | Ferroelectric memories J. F. Scott |
| title_full_unstemmed | Ferroelectric memories J. F. Scott |
| title_short | Ferroelectric memories |
| title_sort | ferroelectric memories |
| topic | Ferroelectric storage cells Speicher Informatik (DE-588)4077653-0 gnd Ferroelektrikum (DE-588)4154121-2 gnd |
| topic_facet | Ferroelectric storage cells Speicher Informatik Ferroelektrikum |
| volume_link | (DE-604)BV012563021 |
| work_keys_str_mv | AT scottjamesf ferroelectricmemories |