1997 IEEE International SOI Conference proceedings: October 6 - 9, 1997, Tenaya Lodge at Yosemite, Fish Camp, Calif.
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
Piscataway, NJ
IEEE Service Center
1997
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XII, 185 S. Ill., graph. Darst. |
| ISBN: | 0780339398 078033938X 0780339606 0780339614 |
Internformat
MARC
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| 084 | |a ELT 364f |2 stub | ||
| 111 | 2 | |a International SOI Conference |d 1997 |c Fish Camp, Calif. |j Verfasser |0 (DE-588)5307989-9 |4 aut | |
| 245 | 1 | 0 | |a 1997 IEEE International SOI Conference proceedings |b October 6 - 9, 1997, Tenaya Lodge at Yosemite, Fish Camp, Calif. |c spons. by the IEEE Electron Devices Society |
| 246 | 1 | 3 | |a Nineteen hundred and ninety-seven IEEE International SOI Conference proceedings |
| 264 | 1 | |a Piscataway, NJ |b IEEE Service Center |c 1997 | |
| 300 | |a XII, 185 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 0 | 7 | |a SOI-Technik |0 (DE-588)4128029-5 |2 gnd |9 rswk-swf |
| 651 | 7 | |a Yosemite Lodge, Calif. |0 (DE-588)4289208-9 |2 gnd |9 rswk-swf | |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |2 gnd-content | |
| 689 | 0 | 0 | |a SOI-Technik |0 (DE-588)4128029-5 |D s |
| 689 | 0 | 1 | |a Yosemite Lodge, Calif. |0 (DE-588)4289208-9 |D g |
| 689 | 0 | |5 DE-604 | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008744683&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-008744683 | ||
Datensatz im Suchindex
| _version_ | 1804127531177082880 |
|---|---|
| adam_text | SESSION 1
PLENARY
1.1 TFSOI-C»e tt
Mert tbeClullíBge
of
Singl«
СЫрРогЛЫе
Wireless
Systems?
WM.
Huang,
D.
Monk
D.
Diaz, and
J.
Ford, Motorola Wireless Subscriber
Systems Group
12
Complemeattry
BipoUr Processes on Bonded SOI
S. Feindt, J. Lapham, andJ.
Steigerwald,
Analog Devices
13
SOI Coarideratioas for Advanced ProdnrtAppHoitioBS
J. Schrmdeter, J.
Гт,
and
M. IM
Honeywell
SSEC
SESSION
2
SOI MATERIALS DEVELOPMENT
I
ZI
Амііув·
of ADVANTOX
(TM)
ТЫм
BOX SMOX-SOI Material
10
M.
А1Ш,
R
Dolan,
M.
Am,
L
Allen,
В.
Cordts,
and
T.
Natta*, Ibis Technology, and
*М0зыЬШ
Z2 Impmveee«t
of
BmriedOiWebrticrhytarrOX
SIMOX
W»fers
12
if.
Ando,
ľ.
Miyamwa,
J.
Jablonští,
M.
SaUo,
S. Kitagawa, and T. Katayama,
Ксяпааи
Electronic Metals
Co.
23
iMprOTiajnOXCowffiìow
for ijwDtfectDeasity«)»«!
Box Breakdown
14
J.R
Schwank.
MJ.
Ane*,
MJŁ
Shaneyßlt, B.L
Draper, T.L. Meisaûieimer, W.L.
Warren,
К.
Vanheusden**, DM.
Fleetwood, and LP. Schanwald,
Sandia
National Laboratories,
•АЙ
Technology Corporation, and ••CiS. Air Force Phillips
Laboratory
24 Crcaäa« et StCe baied
SIMOX
Stradare
by Low
E*erţy
Oiygen Impfauitatio»
16
F.
Xihikawa,
T.
Saito,
N.
Shibata, and *S.
Futan,
Japan
Fiœ
Ceramics Center,
*
The
University qfTotpo
2Л
LowD«t^tfOXa»dtapw*«fITOXPT«xao«QMHtyofSOIFîhn
18
WJ>. Mascara, J. Bennttt. T.
Boden,
R Dockerty, C J?
JI.
Gmdran,
S. Jackett-Murphy,
РЖ.
Vmsvdev,
MJ.
Ane*,
and H.
Hovel**, SEMATECH, *Ibis Technology, and
**
IBM
SESSION
3
SOI DEVICES I
3.1
Am
Aberative Gete
JEkcbvfe Material of rally Depleted SOI CMOS for
20
Low Power
Applicati·»
T.C.
Hsiao**, A.W. Wang*, K. Saraswat*, J.C& Woo, University qfCalforma,
Los Angeles, and *Stanfard University, **Curr*ntfy with Advanced Micro Devices
31
S.litídeProceMfw^WAFtdTHieplettdSOI-MOSřTTj.aasNíSÍ
22
F.
Deng,
RA
Johnson, W.B. Dubbelday*,
GA.
Garcia*,
PM Asbeck,
S.S. Lau,
University of California, San Diego, and *Naval Command, (NRaD)
VI
З
3
High Performance Dual-Gate FD-SOI CMOS Process with an Ultra TMeTiSb
24
H. Nakamura, K. Imai, H. Oniski, K. Kumagai, T.
Yantada,
К.
łwaki,
Г.
Matsubara,
T. Ishigami, S. Kurosawa, and T. Horiuchi, NEC Corporation
3.4
Local
Floating Body Effect in Body-grounded
SOÏ
bMOSFETs
26
Y.-C. Tseng, W.M. Huang*, B. Ikegami,
U.C.
Diaz*, J.M. Ford*. andJ.C.S. Woo,
University of California, Los Angeles, and *Motorola,
Inc
ЗЉ
Dynamic Effects in BTG/SOI MOSFETs and Circuits Dae to Distributed
28
Body Resistance
GO. Workman and J.G.
Fossam,
University of Florida
SESSION
4
POSTERS
4.1
Sificon-On-Diamond
MOS-Transistors
with Thermally Grown Gate Oxide
30
B. Edholm,
L.
Vestling,
M.
Bergh*.
S. Tiensuu**,
and A. Soderbarg***, Uppsala University,
*Chalmers University a/Technology, **Mitel Semiconductor, and ***Ericsson Components
42
Microscopic Structure and Generation Mechanism of Eg Centers
їв
Buried Oxide
32
S.P. Kama,
RD.
Pugh,
CP.
Brothers, W. Shedd, andB-BX. Singartyu, USAFPhillips
Laboratory
4.3
A Fast Method for Conductivity Type Determination in Thin SOI Films
34
S. Henaux(l,2), F.
Mondón
(1,3),
and G.
Reimbold (1), (1)
LE7I_CEA,
(2)
SOITEC,
and
(3)
J. Fourier University
4.4
Mechanisms of Formation of Biried-Oiide in Low-Dose
SIMOX
36
S.
Bagchi,
SJ.
Krause,
and P. Roitman*, Arizona State University, mid *National Institute
ofTechnalogy
43
Hot-Carrier Degradation Behavior in Body-Contacted SOI
«МОЅГЕТѕ
38
J.-W. Yang, J.-W. Lee, W.-C.
Lee, M.-R.
Oh, and Y.-H. Koh, Hyundai Electronics
Industries Co. Ltd
4.6
Senicosdnctor Layer Transfer by Anodic Wafer Bondiag
40
T.-H. Lee, Q.-Y.
Tong,
*Y.-L
Chao,
L-J. Huang, and U. Gosele*. Duke University,
and *Max-Planck Institute of
Microstructure
Physics
4.7
Effect of Varying Implant Energy *nd Dose
ob
the
SIMOX
Microstrectnre
42
R
Dotta,
LP.
Allen*,
R
Chandamet*
M.
Farley*, andlLS. Jones, University of Florida,
and *Ibis Technology Corporation
48
Efficient
Prt^actìon
of SUicon-on-InsnlatorFUn« by Co-IrapUntation of He+with H+
44
A-AgarwalH,
ТЛНаупеѕ*,
V.C. Venezia*,
DJ.Eaglesham#,M.K.
Weldon*,
Y J.
Chabal*.
and
O.W.
Holland*,
HkucRidge
National Laboratory, and
Шей
Laboratories, Lucent
Technologies,
43
Transient Rejpoase after
PnbedloaihinçLicitation
of Several BnriedOiides
46
in FnBy-Depleted SOI NMOS Transistors
Y. Rebours,
V. Ferlet-Cavrois,
O. Gruber,
С.
Raynaud*. and J.L
Peüoie*, CEA,
and
*СЕАаЖП,
410
Oiyte» Partial
Presrarelnflneace
on Internal OiidatioB of
SIMOX
Wafers 4S
P. Ericsson andS.
Bengtsson,
Chalmers University of Technology
4.11
A Modei
for
ЅШОХ
BwMd-OxMe Low-FieM Condwtioe and Trapping
5β
J.-H.Y. Krska, J.W. Yoon, andJ.E. Chung, Massachusetts Institute of Technology
4.12
The Earty Brea^own Characteristics of Thin Gate OxMe o» SOI Wafers
52
J.-H.
Seo,
J.C.
Wood,
W.
Maszara*, and P.K. Vasudev*. University of California,
Los Angeles,
and »SEMATECH
4.13
Barici
OxMe Iahomogeneity in Low-Dose
SIMOX
Structures
54
V. V. Afimas ev, A. Stemans,
A.C.
Revesz*. andH.L Hughes**, University of
Leuven,
*Revesz Associates, and **Naval Research Laboratory
4J4
A HiehDoBHyCÎrc.Ur-SluptSfHîMEMS
wit*
Intere«
Pre«»«
See«-
56
MM.-O. Lee and Y.-H. Moon, Dongshin University
VII
4.15
Fabrication of Si/SiCh Bragg Reflectors by Lew Energy Multiple
SIMOX
58
Y. Jshikawa,
N.
Shibata, andS.
Fúkame*.
Japan Fine Ceramics Center and *The University
ofTokyo
4.1«
Seep Dry Etching of SOI for Silicon Micromachined Structures
60
M.E. McNie,
D.O.
King, V.
Nąyar,
M.C.L. Ward. J.S. Bvrdess**,
С
Quim*. andS.
Blackstone*,
Defence Evaluation Research Agency, *BCO Technologies (HI) Ltd., and University of Newcastle
4.17
PerfonwmceofrIrwdMitedGłte-All-AroinidSOIMOSOTAAmpłiSers
62
A. Vandooren, P. Francis. D.
Flandre,
and J.-P.
Colinge,
Universite
Catholique de
louvam
4.18
CłmracterizłOonoflnterfkccTrapjinSOIMmterial
64
К.
Vanhtusden, Ki.
Warren*.
WM.
Shedi RD.
Pugh,
DM. Fleetwood*. JJL Schwank*,
RA£. Devine**, US
Air Force Phillips Laboratory,
Sandia
National Laboratories, and
France Telecom/CNET
4.19
DUSereacwíatbetoWauTierDesradatioaeíF·^
66
oo SMOX/BESOI Sabrtmtes
Г.
Hvtter,
Я
Maknkapf*. H. Wuner*. S. Pindle. G.
Abstreiter***,
Siemens AC,
ЅЈШС,
*
Waiter-Schottky-lnstitut
4.10
Bthivior of Iadinm in Thin SOI Films
68
J.B. Jacobs,
Я
Schiebet,
К.
Joyner, and
T.
W.
Houston. Texas Instruments
421
A MuB&cturabk SOI CMOS
Procenter
Low Power,
Digita!,
Analog,
ud
70
RF
Applications
К
Stuber
and P. Demies, Peregrine Semiconductor Corporation
4J2 lJuun CMOS
Tedutotojy
Merjed
with
90
VHG-DMOS on SOI Sabstratt
72
Г.
Okyamgt and A. Watanabe, Hitachi Research Laboratory
4O3
BBtb-FkM Electro» Velocity ia
ТЫ»
SOI
Fän«
74
£.
Arnold,
Я
Aquino, and T.
Létavic,
Philips
Electronics
North America Corporation
424 ElpcrUaeeWßaitoratio«
of XJltra-Lew Power CMOS
Desiça
Space tjaa{
76
SOIAS
Оришк
Vr
Ceatrol
Tecaaoíety
/.
Yang ,
Л.
Lochtefeld,
S. Nartndra. A.
Chandrakasan,
and DA. Antoniadh, *Now with
Motorola Corp., and Massachusetts Institute ofTtchnology
425
Derie«
CrfterU for
âFlinyDepiettd
-ОЛвііо
SOI
ТесћжоЈо£у
78
JA.
Buna,
RS.
Frankéi,
AM
Sares,
and
P.W.
Wyatt,
ШТ
Lincoln Laboratory
426
EiinaimeiitłlCIurłcterization
of Traasieat
Floattnt
Во(гу
Effect in Noa-fully
80
Depleted SOI
МОЅИЕТ
S.K.H. Fung, M. Chat, and
PJL
Ko,
Hong Kong Vnivtrsity of
Science
and Technology
427
DeaU«
Gatt
DyaaakTareOoUVehateCDGDT)
SOI MOSFETł
for Lw Power
82
BQthPeriormaaceDesitBS
L
Wei,
Z
Chen andK. Ray, Purdue University
428
CłmpactCmT^tMedriforMeła-bołatedFBlly-OepletedtJhratfcinSOIKMOS
84
DevktiConiideriatSàaewaO-ReUtedriarrowCkaiiadïffeca
J.B.
KìioandK-W. Su, National Taiwan UmvmUy
429
AGeaeiTUl^Tłi^MłdellwShert-awutóDoeUe-GateSOIMOSFKTj
86
Z U
tmdJ.CS. Woo, Umvenity of California, Lot Angeles
4M
Awfrt
Рагаюсмп
«f
Short-Qttaad SOI
MDSHET*
88
J.P.
CoUngĘ, ii.
Cao*,
end
W.
Ortem·,
Umversiu
СеЛоЩж
dt
Lomem
and
Bewlett-JOdiard Laboratoria
Ol
SyaäMlkMScrtwavtl^acleobSOITeclwinT 90
JJ>.
Reakos
JJ>. Bggemom, D.
КшЛвеиооЫг,
andJJ .
Colinge, UnjvtrsUe
Cahotique
ULi
4-32
CADX^wipatíbkMeJdforAccaMobíiíe-MedeSOIpMOSFETi
n
S.
bugmx. »B. Gtntime, **V.
ОеяоЫ
»id
*·Χ>.
Flandre, RPI,,
МШТЕС·,
and UCL, LoumMa-Neuve**
4ЛЗ
J-DNmMricalSúeelatieaefthePKeiW-MOSTraaíiftor
94
D.
Munitami.
S. Cristolovetmu. and
*£
Guichord, LPCS/ENSSRG,
and Sibaco
VU1
434
Physical Background of Hot-Carrier-Indnced
Abnorma] gm
Degradation
96
in a Sub-O.l-mm-Chjinnel nMOSFETs/SIMOX with and LDD Strnctore
Y. Omura, Kansai University
435
Two-Dimensional Simulations of the Parasitic Edge
Conduction
in Deep
98
Submicron
Full Depleted SOI NMOS Devices
O. Faynot,
С
Raynaud, P. Rtvallm emdJ.L Pelloie, LETJ-CEA/Grenoble
436
Design and Analysis of a NovelMixed Accumulation/Iversion Mode FD
100
SOIMOSFET
F.L. Duan cmdD. S. loannou, George
Masat
university
4SI
Breakdown Analysis in
Л,
SOI aad Partial SOI Power Structures
102
F.
Vărea,
A. Papesca
and
W.
Milne, Cambridge University
438
Comparison of Charge Injection in SOI and
Ввік
MOS
Analog Switches
104
L. Demeus andD.
Flandre, Université Catholique de
Louvam
439
Analytic»! Short-Channel Effect Model for Ultra-Thin SOI MOSFETs Including
106
Floating Body Effects
A. O. Aden, Y. Fukvshima,
К
Higashi, and A. Kagisawa, SHARP Corporation
4.40
Performance Evaluation of Bulk Si and SOI RFLDMOSFETs for Emerging RFIC
108
Applications
P. Perugupalli, M. Trivedi,
К
Skenai, and S.K. Leong*. University of Illinois at Chicago
and *Pclyfet RF Devices
4.41
SIMOX
Voltage References for Applications np to 27SC using
tne
Threshold
110
Voltage Difference Principle
C.
Eisenhut
andJ.W. Klein, Ruhr-University
Bochum
4.42
A Comparative Stndy of SOI Inverter
Circuiti
for Low-Voltage aad Low-Power
112
Applications
W. Jin andP.CH. Chan, Hong Kong University of Science and Technology
4.43
CharacteriMtioiJofGeomefryDtpeiideaceofSOIMOSFrrTbermilÄesJstamce
114
and Capacitance Parameters
B.M. Tenbroek, W. Redman-White, M.S.L. Lee, RJ.T. Bunyan*. andMJ.Uren*, University
of Southampton and *Defence Evaluation and Research Agency
4.44
Hole Trap Investigations in Supplemental Oxygen
SIMOX
Wafers by Opposite
116
Channel Based Charge Injection
X. Zhao, F.L Duan, A.
ThanaüaJäs, D.E.
Іоаяпои,
R.K. Lawrence*, andHX. Hughes,
George Mason University, *ARACOR, and Naval Research Laboratory
4.45
Charge Trapping in Si Implanted
SIMOX
118
TM
Bhar,
RJ.
Lambert*, andH.L Hughes**, University of the
Diaria
of Columbia,
Consultant, **Naval Research Laboratory
4M
Carrier RecombiMtionljfelin« Measurement of Bonded SOI Wafer* by
120
Microwave Photoceedactivity Decay Method
5.
Ahmed, B. Catarim, S. Lizotte, K. Jba*, H. Hashixume*, S.
Sumie**, International
Rectifier,
*Genesis Technology
ůtc,
and ***Kobe Steel, Ltd.
4.47 EIpírime■ωVeгfficatioβofBβrieõ^<)I^dewitìιOver^V/cш
Breakdown
ИеИЈ
122
in Low-Do*«
SIMOX
Wafers
K. Kawamura, A. Matsumum, T.
Tono,
L
Hamaguchi,
Y.
Nagatake,
S.
Takayama,
M. Tachimeti, and
К.
Kurumada, Nippon Steel Corporation
IX
SESSION 5
SOIMATEMALS DEVELOPMENT
Π
5.1
MechsnismofSmconEifoliatìon
by
Hydroge» Implantation ofHe,
Li »nd
Si
124
Co-implantation,
М.К.
Weldon,
V.E.
Morsico,
YJ.
Chabot, M.
СЫШ,
Y. Caudano,
S.B.
Christman,
EJE.
Chaban,
D.C.
Jacobson,
W.L.
Brawn,
J. Sapjeía, C.-M. Hsteh,
СЛ.
Goodwin,
A. Agarwal*,
Т.Е.
Haynes*,
and W.BJacksan**, Bell Laboratories, Lucent Technologies,
Юак
Ridge National
Laboratory,
and* *Xerax
Palo Alto
Research Center
ЅЛ
Low
Temperato« Si
Layer
SplittiHg
126
Q.-Y.
Tong,
*T.-H. Lee, 1.-J.
Huang,
Y.-L
Chao,
and U. Gosele*, Duke
University,
and *also
at Max-Planck Institute of
Microstructure
Physics
S3
Aiulytó
of Tkin
Fy™
SOI Material IWectReqeiremeats for Advanced Circnit
128
Application
M. Ailes, S.
Wilson*.
H. Hovel**,
W.
Műszóra***,
and R Dolan, Ibis Technology,
*МЫогЫа,
IBM, and
***5ЕШ7ЕСЯ
5.4
QiuUty of SOI Film after
Smítce
SmoothÌMg
wit»
HydrojeB
Annealing, Toacb-polishing
130
W.P.
Memora,
С.РЛ.
Goudron,
SJackett-Murphy,
Р.К.
Vasudev, S.S.
Iyer*, and
MJ.
Ane**,
SEMATECH,
*SiBond, and**Ibis
Technology
SS
ACsmpaiboaefOxidjittOBlBdnc^Strena^IMectňityiaSnfOXaodBoBdcdSOI
132
Wafers
M.
Mendicato,
I.
Yang, N.
Cave, S.
Veeraraghavan, and
P. Gilbert, Motorola, Inc.
SESSION
б
SOIDEVICESn
6.1
Thermal CoedMctivity
of
SOI
Device Layers
134
M. Asheghi, Y.S. Ju,
and K.E.
Goodson, Stanford
University
62
Novel PolyjukoaSidewaU Gate Sakonje-Siipphire MOSFET for Power
136
Amplifier App&eatiou
RA. Johnson, S£>.
Kasa*,
P.R
de
la Houssaye*.
GA.
Garcia*, I. Lagnado*.
and
P.M.
Asbeck, University of California, San Diego and *Naval Command
63
Multiple
Tra«âe«t
Effects
Ш
SOI Tnusistors: Systematic Measurements
138
and SimoiatHi·
D.
Weiser,
D.
Muratami*,
S. Cristoloveami*,
О.
Faynot**, J.L. Pelloie**, andJ. Fossum,
University cf Florida. •LPCSENSERG,
and ^LETVCEA
6Λ
Efliouy
of Body Tie»
««der Dymam« Switctóg
Condition
U
Partially Depleted
14«
SOI CMOS Tecfcaafagy
S.
Kruhům, SEMATECH/AMD
SESSION
7
SOI »SUABILITY
&
RADIATION EFFECTS
7.1
BOXQmut^MMeatmrrfbyHyii^e^Anm^IedBcedPMÍtívtCkareeTraeDert
142
ЛІС
Lawrmce,
ИХ. НщШ*.
RE.
Stal&mh*,
DJ. Ua*.
måM-E.
Twigg*. ARACOR
and Naval Research laboratory
73. SOI
М««егЫ|
Defect
CtariKfcrioitìe·
144
D.
T. Pham, B.-Y.
Крђ/еп,
D.
CřMtara,
¥.
Want,
N.
Nguyen,
J.
Smith,
J.
Veteran,
M. Mendicino,
and A. Campbell, Motorola
7
J
Hot-Camer-ìwiTcd Degnami—
і»
Deep
ЅиДшкстш
U»a>wrt
»md
SIMOX
МОЅГГГ»
146
S.H. Ram,
C. Xeynaud*, J.L.
Pellote*,
and
F.
Balestra, LPCS/EN SERG-IMPG
andLm-CEA
7.4
ADVANTOXCtm) More Radiation-Resistant «an Fun Dose
SIMOX
148
S.T. Liu, H. Hughes*, W. Jenkins*, andL. Men *, Honeywell, Inc.,
*Naval Research Laboratory, ana **Ibis Corporation
7.5
Effect of Hz Annealing on Silicon Quality and 1/f Noise in SOS ISO
T. Morishita, Y. Moriyasu, Y. Kawakami, M. Matsui.T. Kobayashi*. M. Kimura*,
and
Я
Reedy , Asahi Chemical Industry Co., Ltd, Asahi Kasei Microsystem Co., Ltd.,
and
Peregrine
Semiconductor Corporation.
SESSION
8
SOI CIRCUIT DEVELOPMENT
8.1
High Speed SOI
Baffer
Cii
cuit
»
itb the Efficient Connection of Subsidiary
MOSťLTs
152
for Dynamic Threshold
Control
J. -H.
Lee and Y.-J.
Park*. Wonkwang University and *Seoul National University
8.2
A .Novel Dynamic Vt Orcnit Configuration 1S4
T. W. Houston, Texas Instruments Inc.
S3
Measniraeet and Simulation ofSeltHeating in SOI CMOS Analogae Circuits
156
B.M.
Tenbrock,
MSX. Lee, W. Redman-White, CS. Edwards, RJ.T. Bunyan*. and
MJ.
Uren*,
University of Southampton and Defence Evaluation and Research Agency
8.4
Kink-Free Analog Circuit Design with Floating-Body NFD/SOI CMOS:
A Carrent-
158
Steering
D
-А
Converter
D. Chang. J.G. Fossum, S.K. Reynolds*, and MM. Pelella*, University cf
Marida,
and IBM Corp.
8Љ
A High Speed Offset-Compensated Differential Comparator in Floating Body
160
CMOS SOS Technology for Radiation Hard Swhcned-Capacitor Systems
CF.
Edwards, W. Redman-White, andM. Bracey, University of Southampton
8.6
MetastabilityofSOICMOIS Latches
162
C. Tretz, C.T. Chuang*.
LM. Termán*.
CJ. Anderson*, andC. Zukowski, Columbia
University and
*ПЅМ
Research
8.7
SOI MOSFET Mismatch Dot To Floating-Body Effects
164
JA. Mandelman,
F.
Assaderaghi, and
LX.
Hsu, JBM Semiconductor
Research
and Development
Center
SESSION
9
soi
сжат
applications
9.1
A
<U5mm56aKG
SOI/CMOS Gate Array asing
Fietó-ShieH
Isotatioe Technique
166
K. Mashiio, K. Veda. K. Nii, Y.
Wada,
T.
Hirota,
S.
Moeda,
T.Iwamatsu, Y. Yamagucki,
T. Ipposki, S. Maegawa, and H.
Hamáno,
Mitsubishi Electric Corporation
93. 300
KG
Gale-Array
^m^e^-nmtntra-Thm-FfrnSvVHtepktetl
168
CMOS/SmOX with
Tugstza-Đeposited SoarceflDraU
Y.
Sato,
Y.
Kodo,
T. Tsackiya, T. Kosugi, H. Ishii. andK. Hishimwa, NTT Systtm Etectromai
Laboratories
93
64MbitSOtDRAMTechnrtotiej
Using
Bedy^entacted
(ВС)
StnKOľtre
17β
Y.-H. Koh, J.-H. Choi, J.-W. Yang. M.-H. Nam, W.-C. Lee, J.-W. Let, andii-R Oh
Hyundai Electronics Industries Co., Ltd
9.4
Radiation Hardened SOI CMOS and
IM
SRAM
172
P.S.
Fechner. GJD. Dougal, J.G. SuUwold. R. Swanson, GA. Shaw, S.T. Liu, and CS. Ym,
Honeywell,
SSEC
9Љ
ANewSIUMCeflI)esiga»sÍ40J5meCMC>SÄIMOXTechB<>*oCr
174
К.
Kumagai,
T.
Yamada,
H.
Л
-efe
H.
Nakamura.
H.
Oniski.
Y.
Matsubam,
К.
¡mai,
and S. Kurosawa, NEC Corporation.
SESSION 10
LATENEWS
10.1
Predictive Model of SOI Buried Oxide Charging Based on Statistical
176
Mechanics a»d
Spia
Resonance Data
J.F.
Софу,
Jr.,
P.M.
Lenahan*, and P. Cole**, Dynamics Research Corporation,
*Pem State University,and **Naval Surface Warfare Center
10.2
Extrapolation of DC Device Lifetime
ів
Body-Floating and Body-Gronnded
178
SOIMOSFETs
MJ. Sherony, DA. Antoniadis, J.W. Sleight*, andK.R
Mistry*,
Massachusetts Institute
ofTechndogy,mtd *Digital Equipment Corporation
103
The HgFET:
Λ
New Characterization Tool for SOI Silicon film Properties
180
HJ. Hovel, IBM Research Division, TJ. Watson Research Center
104
Hlgb-ScHsithftyMfeaswement of Particles on SOI Wafer«
182
H. Naruoia, Y. Yoshida, T. bvamatsu, Y. Yamaguchi, T. IpposhicmdH. Yamamoto,
Mitsubishi Electric Corporation
ЖІІ
|
| any_adam_object | 1 |
| author_corporate | International SOI Conference Fish Camp, Calif |
| author_corporate_role | aut |
| author_facet | International SOI Conference Fish Camp, Calif |
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| bvnumber | BV012852625 |
| classification_tum | ELT 364f |
| ctrlnum | (OCoLC)634226411 (DE-599)BVBBV012852625 |
| discipline | Elektrotechnik |
| format | Conference Proceeding Book |
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| geographic_facet | Yosemite Lodge, Calif. |
| id | DE-604.BV012852625 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:34:49Z |
| institution | BVB |
| institution_GND | (DE-588)5307989-9 |
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| physical | XII, 185 S. Ill., graph. Darst. |
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| spelling | International SOI Conference 1997 Fish Camp, Calif. Verfasser (DE-588)5307989-9 aut 1997 IEEE International SOI Conference proceedings October 6 - 9, 1997, Tenaya Lodge at Yosemite, Fish Camp, Calif. spons. by the IEEE Electron Devices Society Nineteen hundred and ninety-seven IEEE International SOI Conference proceedings Piscataway, NJ IEEE Service Center 1997 XII, 185 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier SOI-Technik (DE-588)4128029-5 gnd rswk-swf Yosemite Lodge, Calif. (DE-588)4289208-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content SOI-Technik (DE-588)4128029-5 s Yosemite Lodge, Calif. (DE-588)4289208-9 g DE-604 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008744683&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | 1997 IEEE International SOI Conference proceedings October 6 - 9, 1997, Tenaya Lodge at Yosemite, Fish Camp, Calif. SOI-Technik (DE-588)4128029-5 gnd |
| subject_GND | (DE-588)4128029-5 (DE-588)4289208-9 (DE-588)1071861417 |
| title | 1997 IEEE International SOI Conference proceedings October 6 - 9, 1997, Tenaya Lodge at Yosemite, Fish Camp, Calif. |
| title_alt | Nineteen hundred and ninety-seven IEEE International SOI Conference proceedings |
| title_auth | 1997 IEEE International SOI Conference proceedings October 6 - 9, 1997, Tenaya Lodge at Yosemite, Fish Camp, Calif. |
| title_exact_search | 1997 IEEE International SOI Conference proceedings October 6 - 9, 1997, Tenaya Lodge at Yosemite, Fish Camp, Calif. |
| title_full | 1997 IEEE International SOI Conference proceedings October 6 - 9, 1997, Tenaya Lodge at Yosemite, Fish Camp, Calif. spons. by the IEEE Electron Devices Society |
| title_fullStr | 1997 IEEE International SOI Conference proceedings October 6 - 9, 1997, Tenaya Lodge at Yosemite, Fish Camp, Calif. spons. by the IEEE Electron Devices Society |
| title_full_unstemmed | 1997 IEEE International SOI Conference proceedings October 6 - 9, 1997, Tenaya Lodge at Yosemite, Fish Camp, Calif. spons. by the IEEE Electron Devices Society |
| title_short | 1997 IEEE International SOI Conference proceedings |
| title_sort | 1997 ieee international soi conference proceedings october 6 9 1997 tenaya lodge at yosemite fish camp calif |
| title_sub | October 6 - 9, 1997, Tenaya Lodge at Yosemite, Fish Camp, Calif. |
| topic | SOI-Technik (DE-588)4128029-5 gnd |
| topic_facet | SOI-Technik Yosemite Lodge, Calif. Konferenzschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008744683&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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