GaN and related materials II:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Amsterdam
Gordon & Breach
2000
|
| Schriftenreihe: | Optoelectronic properties of semiconductors and superlattices
7 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | X, 698, [8] S. Ill., graph. Darst. |
| ISBN: | 9056996851 905699686X |
Internformat
MARC
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| 300 | |a X, 698, [8] S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 490 | 1 | |a Optoelectronic properties of semiconductors and superlattices |v 7 | |
| 650 | 4 | |a Gallium compounds | |
| 650 | 4 | |a Nitrides | |
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Datensatz im Suchindex
| _version_ | 1804127507731972096 |
|---|---|
| adam_text | GAN AND RELATED MATERIALS II EDITED BY STEPHEN J. PEARTON UNIVERSITY OF
FLORIDA GAINESVILLE, FLORIDA, USA GORDON AND BREACH SCIENCE PUBLISHERS
AUSTRALIA * CANADA * FRANCE * GENNANY * INDIA * JAPAN LUXEMBOURG *
MALAYSIA * THE NETHERLANDS RUSSIA * SINGAPORE * SWITZERLAND CONTENTS
ABOUT THE SERIES VII INTRODUCTION IX 1 LASER DIODES 1 S. NAKAMURA 2 GAN
AND ALGAN DEVICES: FIELD EFFECT TRANSISTORS AND PHOTODETECTORS 47 M. S.
SHUR AND M. ASIFKHAN 3 GROWTH AND DOPING OF DEFECTS IN *-NITRIDES 93 G.
POPOVICI AND H. MORKOG 4 STRUCTURAL AND ELECTRONIC PROPERTIES OF ALGAN
173 A. Y. POLYAKOV 5 THEORY OF LASER GAIN IN GROUP *-NITRIDE QUANTUM
WELLS 235 W. W. CHOW AND S. W. KOCH 6 ELECTRONIC AND OPTICAL PROPERTIES
OF BULK AND QW STRUCTURES 263 T. UENOYAMA AND M. SUZUKI 7 MATERIALS
THEORY BASED MODELING OF GAN DEVICES 305 K. F. BRENNAN, J. KOLNIK, I. H.
OGUZMAN, E. BELLOTTI, M. FARAHMAND, P. P. RUDEN, R. WANG AND J. D.
ALBRECHT 8 ERBIUM DOPING OF III-V NITRIDES 361 /. M. ZAVADA 9 NOVEL
DEVICE APPLICATIONS FOR ILL-NITRIDES 387 * R. ABERNATHY AND F. REN 10
THERMODYNAMIC AND ELECTRONIC PROPERTIES OF GAN AND RELATED ALLOYS 411 M.
A. BERDING, M. VAN SCHILFGAARDE AND A. SHER 11 GAN QUANTUM DOTS 445 S.
TANAKA AND P. RAMVALL VI CONTENTS 12 GAN DEVICE PROCESSING 475 5. J.
PEARTON 13 CONTACTS TO GAN 541 S. E. MOHNEY AND S. S. LAU 14 ION
IMPLANTATION ADVANCES IN GROUP *-NITRIDE SEMICONDUCTORS 567 /. *. ZOLPER
15 INDUCTIVELY COUPLED PLASMA ETCHING OF III-V NITRIDES 601 R. J. SHUL
16 LOW ENERGY ELECTRON ENHANCED ETCHING (LE4) OF III-N MATERIALS 663 H.
P. GILLIS, K. P. MARTIN AND D. A. CHOUTOV INDEX 677
|
| any_adam_object | 1 |
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| callnumber-raw | TK7871.15.G33 |
| callnumber-search | TK7871.15.G33 |
| callnumber-sort | TK 47871.15 G33 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 3100 |
| ctrlnum | (OCoLC)44077201 (DE-599)BVBBV012830272 |
| dewey-full | 537.622 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.622 |
| dewey-search | 537.622 |
| dewey-sort | 3537.622 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| format | Book |
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| id | DE-604.BV012830272 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:34:27Z |
| institution | BVB |
| isbn | 9056996851 905699686X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008729262 |
| oclc_num | 44077201 |
| open_access_boolean | |
| owner | DE-703 DE-355 DE-BY-UBR |
| owner_facet | DE-703 DE-355 DE-BY-UBR |
| physical | X, 698, [8] S. Ill., graph. Darst. |
| publishDate | 2000 |
| publishDateSearch | 2000 |
| publishDateSort | 2000 |
| publisher | Gordon & Breach |
| record_format | marc |
| series | Optoelectronic properties of semiconductors and superlattices |
| series2 | Optoelectronic properties of semiconductors and superlattices |
| spelling | GaN and related materials II ed. by Stephen J. Pearton Amsterdam Gordon & Breach 2000 X, 698, [8] S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Optoelectronic properties of semiconductors and superlattices 7 Gallium compounds Nitrides Galliumverbindungen (DE-588)4155888-1 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Galliumverbindungen (DE-588)4155888-1 s Drei-Fünf-Halbleiter (DE-588)4150649-2 s DE-604 Galliumnitrid (DE-588)4375592-6 s Pearton, Stephen J. Sonstige oth Optoelectronic properties of semiconductors and superlattices 7 (DE-604)BV011683729 7 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008729262&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | GaN and related materials II Optoelectronic properties of semiconductors and superlattices Gallium compounds Nitrides Galliumverbindungen (DE-588)4155888-1 gnd Galliumnitrid (DE-588)4375592-6 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| subject_GND | (DE-588)4155888-1 (DE-588)4375592-6 (DE-588)4150649-2 |
| title | GaN and related materials II |
| title_auth | GaN and related materials II |
| title_exact_search | GaN and related materials II |
| title_full | GaN and related materials II ed. by Stephen J. Pearton |
| title_fullStr | GaN and related materials II ed. by Stephen J. Pearton |
| title_full_unstemmed | GaN and related materials II ed. by Stephen J. Pearton |
| title_short | GaN and related materials II |
| title_sort | gan and related materials ii |
| topic | Gallium compounds Nitrides Galliumverbindungen (DE-588)4155888-1 gnd Galliumnitrid (DE-588)4375592-6 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| topic_facet | Gallium compounds Nitrides Galliumverbindungen Galliumnitrid Drei-Fünf-Halbleiter |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008729262&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV011683729 |
| work_keys_str_mv | AT peartonstephenj ganandrelatedmaterialsii |