Proceedings of the Topical Workshop on Heterostructure Microelectronics: Shonan Village Center, Hayama-Machi, Kanagawa, Japan, 30th August - 2nd September, 1998
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Oxford
Pergamon
1999
|
| Schriftenreihe: | Solid state electronics
43,8 : special issue |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Einzelaufnahme eines Zeitschr.-H. |
| Beschreibung: | VI S., S. 1321 - 1663 Ill., graph. Darst. |
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| 245 | 1 | 0 | |a Proceedings of the Topical Workshop on Heterostructure Microelectronics |b Shonan Village Center, Hayama-Machi, Kanagawa, Japan, 30th August - 2nd September, 1998 |
| 264 | 1 | |a Oxford |b Pergamon |c 1999 | |
| 300 | |a VI S., S. 1321 - 1663 |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 490 | 0 | |a Solid state electronics |v 43,8 : special issue | |
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Datensatz im Suchindex
| _version_ | 1804127473925881856 |
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| adam_text | SOLID-STATE
ELECTRONICS
PERGAMON Solid-State Electronics
43 (1999)
iii
vi ___
SPECIAL ISSUE
PROCEEDINGS
OF THE TOPICAL WORKSHOP ON
HETEROSTRUCTURE OF MICROELECTRONICS
CONTENTS
Preface to special issue
.............................................................................................................. 1321
Committee
................................................................................................................................... 1323
HIGH-SPEED
&
HIGH-FREQUENCY DEVICES
J. C. M. Hwang: Relationship between gate lag, power drift, and power slump of
pseudomorphic high electron mobility transistors
................................................................. 1325
1.
Adesida. A. Mahajan. G.
Cueva
and P. Fay: Novel
HEMT
processing technologies
and their circuit applications
.................................................................................................... 1333
Y. Ohno. S. Oh
κι;
bo. K. Kasahara. K. Kunihiro and Y. Takahashi: Suppression of
G ijs frequency dispersion in heterojunction FETs with a partially depleted
/Муре
buffer
layer
.............................................................................................................................................. 1339
T.
Nozi..
T. Si (HYAMA, S.
Hongo
and K. Morizuka: A new method for evaluation of
surface recombination in heterojunction bipolar transistors by magnetotransport
.......... 1347
NOVEL DEVICES
A. Seabaľgh,
В.
Brar.
T. Broekaert,
F. Morris.
P.
van der Wagt and G. Frazier:
Resonant-tunneling mixed-signal circuit technology
............................................................. 1355
J. N. Schllman:
Analysis of Sb-based resonant
interband
tunnel diodes for circuit
modeling
...................................................................................................................................... 1367
A. Sc/HLPPhV SiGe-HBTs for mobile communication
......................................................... 1373
L.
Konicí.
M.
Zelner.
G.
Hock,
T.
Hackbarth.
M.
Glück,
T.
Ostermann
and
M.
Saxarra:
n-
and
p-Type SiGe
HFETs and circuits
....................................................... 1383
INDI
MI) IN Re Men Cam
Su
Лгмг
. (
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ЛЬмг
Sen
.
Curr
Coni Phvs.
Chem.
&
Karlh Sci
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PERGAMON
ISSN
0038-1101
Spaiili
Issue Solid-State Electronics
43
ι
1
999
1
iii
vi
F.
Sato.
T.
Hashimoto.
T. Tatsumi and T. Tashiro:
Process
design for SiGe-HBTs
prepared using cold-wall UHV/CVD
...................................................................................... 1389
Y.
Mivamoto.
H.
Tobita.
К.
Oshima
and K.
Furuya: Barrier thickness dependence of
peak current density in GalnAs AlAsinP resonant tunneling diodes by MOVPE
......... 1395
MICROWAVE/MILLIMETER WAVE DEVICES
N
L. L. Wang. B. Lin. F.
Н
-F.
Chad, G. Jackson. Z. Chen and
С. Р.
Lee: Advanced
heterostructure transistor technologies for wireless communications
................................. 1399
T. Tanaka. H. Furukawa. H. Nagata and D. LJeda: A novel GaAs flip-chip power
MODFET with high gain and efficiency
................................................................................ 1405
K. Fljimoto. H. Masato. K. Kawashima, M. Nishitsuji. M.
Tarata.
Y.
Kudo and
O. Ishikawa:
A lov.
power dissipation
0.4
~
7
GHz transimpedance amplifier
1С
for
SCM optical communication system
....................................................................................... 1413
T. B. Nishimura.
N.
Iwata. Y.
Віто
and G.
Hau: 44%
efficiency operation of power
heterojunction
FET
at near pinch-off for
3.5
V wide-band CDMA cellular phones
....... 1419
K. Mochizuki. T. Oka. K. Ouchi and T. Tanoue: Reliability investigation of heavily
С
-doped InGaP GaAs HBTs operated under a very high current-density condition
...... 1425
S. S. H. Hsu. B. Bayraktaroglu and D. Pavlidis: Comparison of conventional and
thermally-stable cascode
(TSC) AlGaAs GaAs
HBTs for microwave power applications
1429
T. Low. T. Shirley.
С
Hutchinson, G. Essilfie, W. Whitelfy, B. Yeats and
D.
D Avanzo:
InGaP HBT technology for RF and microwave instrumentation
............ 1437
R.
Driad.
S. R.
Laframboise.
Z.
H. Lu, S. P. McAlister and W. R. McKinnon:
Passivation of InP-based HBTs
............................................................................................... 1445
WIDE
BANDGAP
DEVICES
M. S. Shur. R. Gaska
and A. Bykhovski: GaN-based electronic devices......................
1451
A. A.
Burk
Jr..
M. J. OLoughlin, R. R. Siergiej, A. K. Agarwal. S. Sriram.
R. C.
Clarke.
M. F. MacMillan, V. Balakrishna and C. D.
Brandt: SiC
and GaN
wide
bandgap
semiconductor materials and devices
............................................................. 459
A. Hokazono. K. Tsugawa. H. Umf.zana. K. Kitatani and H. Kawarada: Surface
p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen
terminated
(001)
surfaces of diamond
..................................................................................... 1465
D. E. Griimír.
N.
X. Nguyen and C. Nguyen: GaN MODFET microwave power
technology for future generation radar and communications systems
............................... 1 -1-73
J. C
Zolper: Progress towards ultra-wideband AlGaN GaN MMICs
.............................
i479
Y. Koyama. T. HASHi/tMEand H. Hasegawv. Formation processes and properties of
Schottky and ohmic contacts on «-type GaN for field effect transistor applications
....... 1483
Specilli
Issue
Siiliti-Shiu-
І .Ііч іпнін
-fì
/WM
m u
CIRCUIT
APPLICATIONS, DEVICE FABRICATION AND CHARACTERIZATION
M.
Rodwiìll.
Q. Lit;. D.
Mensa.
J. Githrii
.
S.C. Mariin.
R. ľ. Smi
πι.
R.
Iі!
її
и л.
В.
Agarwae.
S. Jaganaîhan. T.
Маті
и-
w and
S.
Long:
Transferred-substrate
ИНГ
integrated circuits
....................................................................................................................... 14X9
E. H. C.
Parker and T.
E. W
плі і
:
Siíie
heterostructure CMOS circuits ami
applications
.................................................................................................................................
I4<;7
D.
Sawdai and
D.
Paveidis: InP-bascd complementary
ИНГ
amplifiers tor use in
communication systems
.............................................................................................................
I so?
N.
Harada, Y. Awano. K. Hikosaka and
N.
Vokovama: A
77
К
analog monolithic
HEMT
amplifier for high-speed .losephson-semieonduetor interlace circuit
..................... 1 5
I
}
T. Ohshima. R. Shigf.masa, M. Sato. M. Tsunotani and T. Kimura: Improvement ol
0.1
μπι
-gate
InGaAs AlGaAs
HEMT
performance by suppression ol electro-chemical
etching in deionized water
........................................................................................................ 1519
D. Xu, T. Suemitsij. H. Yokoyama. Y.
Umida.
Y. Yamant. T.
H.noki and Y.
Isim:
Short gate-length InAlAs/InGaAs MODEETs with asymmetry gate-recess grooves:
electrochemical fabrication and performance
......................................................................... 1527
M.
Kunze,
L. H. Lľi·:, H.
Y. Chung and
Ľ.
Koiin: First demonstration of low
temperature grown InP-channel HFET transferred onto GaAs substrate
......................... 1535
H.
Sai.
H.
Fujikura,
A. Hirama and H. Haskgawa: Growth of device quality liiiiaP
GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylpho-
sphine
........................................................................................................................................... 1541
K. Matsunami. T. Takeyama. T. Usunami.
S.
Kishimoto.
K. M ai
/awa.
T.
Mi/i
там.
M.
TOMIZAWA, P.
Schmid.
K. M. Lipka and E.
К он
n:
Potential profile measurement of
GaAs MESFETs passivated with low-temperature grown GaAs layer by Kelvin probe
force microscopy
........................................................................................................................ 1547
F. Schuermeyf.r, P. J. Zampardi and P. M. Asbi.ck:
Photoemission
studies on
heterostructure bipolar transistors
........................................................................................... 1555
H. Takahashi. T. Yoshida. M. Mi
тон. Т.
S.akai and H. Hasigawa: In-sim
characterization technique of compound semiconductor heterostructure growth and
device processing steps based on UHV contactless capaeitance-voltage measurement...
1561
T. Sugimura. T. Tsuzuku. T. Katsui. Y.
Kasai.
T.
Inokuma. S. Hashimoto.
K. Iiyama and S. Takamiya: A preliminary study of MIS diodes with nm-thin CiaAs-
oxide layers
................................................................................................................................. 1571
SYSTEMS APPLICATIONS
M.
С
Comparimi.
M.
Feudale and A.
Si riam: Applications
of HEMT
devices in space
communication systems and equipment: a European perspective
....................................... 1577
M. Muraguchi: RF device trends for mobile communications
......................................... 1591
Special Issue Solid-Slate Electronics
43
1
1999
1 iii-vi
P. Quhntin, C. DouRLtNS, M. Camiade and D.
Pons: MM-wave
integrated circuits and
their applications to communication and automotive systems
............................................ 1599
J.
Dickmann,
M.
Birg.
V.
Ziegler,
С
Wölk
and
R.
Deufel: MM-wave
HEMT
based
circuits and their system applications
...................................................................................... 1607
HIGH-SPEED
ICS
FOR OPTICAL COMMUNICATION SYSTEMS
K.
Emura:
Technologies for making full use of high-speed
1С
performance in the
development of 40-Gb/s optical receivers
............................................................................... 1613
K. Washio: SiGe HBTs and ICs for optical-fiber communication systems
...................... 1619
L.
Lunari»:
Heterostructure circuit applications in optical communications
.................. 1627
P. J. Zami ardi, K.
Runge,
R.
L. Pierson, J. A. Higgins, R. Yu, B. T. McDermott
and
N.
Pan: Heterostructure-based high-speed/high-frequency electronic circuit appli¬
cations
.......................................................................................................................................... 1633
MANUFACTURING
H. Rohdin, A. Wakita,
A. Nagy,
V. Robbins,
N.
Moll and Chung-yi
Su: A
0.1-μηι
MHEMT millimeter-wave
1С
technology designed for manufacturability
........................ 1645
H.
Wada.
Η.
Sasaki and T. Kamijoh: Wafer bonding technology for optoelectronic
integrated devices
....................................................................................................................... 1655
CONTENTS This journal is part of ContentsDirect, the free alerting service which sends tables of
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ContentsDirect online at: www.elsevier.nl/locate/contentsdirect
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.........
PERGAMON
ISSN 0038-1101
|
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| spelling | Topical Workshop on Heterostructure Microelectronics 3 1998 Hayama Verfasser (DE-588)3045337-9 aut Proceedings of the Topical Workshop on Heterostructure Microelectronics Shonan Village Center, Hayama-Machi, Kanagawa, Japan, 30th August - 2nd September, 1998 Oxford Pergamon 1999 VI S., S. 1321 - 1663 Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Solid state electronics 43,8 : special issue Einzelaufnahme eines Zeitschr.-H. Heterostruktur-Bauelement (DE-588)4236378-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Heterostruktur-Bauelement (DE-588)4236378-0 s DE-604 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008707060&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the Topical Workshop on Heterostructure Microelectronics Shonan Village Center, Hayama-Machi, Kanagawa, Japan, 30th August - 2nd September, 1998 Heterostruktur-Bauelement (DE-588)4236378-0 gnd |
| subject_GND | (DE-588)4236378-0 (DE-588)1071861417 |
| title | Proceedings of the Topical Workshop on Heterostructure Microelectronics Shonan Village Center, Hayama-Machi, Kanagawa, Japan, 30th August - 2nd September, 1998 |
| title_auth | Proceedings of the Topical Workshop on Heterostructure Microelectronics Shonan Village Center, Hayama-Machi, Kanagawa, Japan, 30th August - 2nd September, 1998 |
| title_exact_search | Proceedings of the Topical Workshop on Heterostructure Microelectronics Shonan Village Center, Hayama-Machi, Kanagawa, Japan, 30th August - 2nd September, 1998 |
| title_full | Proceedings of the Topical Workshop on Heterostructure Microelectronics Shonan Village Center, Hayama-Machi, Kanagawa, Japan, 30th August - 2nd September, 1998 |
| title_fullStr | Proceedings of the Topical Workshop on Heterostructure Microelectronics Shonan Village Center, Hayama-Machi, Kanagawa, Japan, 30th August - 2nd September, 1998 |
| title_full_unstemmed | Proceedings of the Topical Workshop on Heterostructure Microelectronics Shonan Village Center, Hayama-Machi, Kanagawa, Japan, 30th August - 2nd September, 1998 |
| title_short | Proceedings of the Topical Workshop on Heterostructure Microelectronics |
| title_sort | proceedings of the topical workshop on heterostructure microelectronics shonan village center hayama machi kanagawa japan 30th august 2nd september 1998 |
| title_sub | Shonan Village Center, Hayama-Machi, Kanagawa, Japan, 30th August - 2nd September, 1998 |
| topic | Heterostruktur-Bauelement (DE-588)4236378-0 gnd |
| topic_facet | Heterostruktur-Bauelement Konferenzschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008707060&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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