Infrared detectors:
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Amsterdam
Gordon & Breach
2000
|
Schriftenreihe: | Electrocomponent science monographs
10 |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | XIX, 681 S. Ill., graph. Darst. |
ISBN: | 9056992031 |
Internformat
MARC
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035 | |a (DE-599)BVBBV012798809 | ||
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100 | 1 | |a Rogalski, Antoni |e Verfasser |4 aut | |
245 | 1 | 0 | |a Infrared detectors |c A. Rogalski |
264 | 1 | |a Amsterdam |b Gordon & Breach |c 2000 | |
300 | |a XIX, 681 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
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338 | |b nc |2 rdacarrier | ||
490 | 1 | |a Electrocomponent science monographs |v 10 | |
650 | 7 | |a Detetores |2 larpcal | |
650 | 4 | |a Détecteurs de rayonnement infrarouge | |
650 | 4 | |a Infrared detectors | |
650 | 0 | 7 | |a Infrarotdetektor |0 (DE-588)4161692-3 |2 gnd |9 rswk-swf |
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999 | |a oai:aleph.bib-bvb.de:BVB01-008703899 |
Datensatz im Suchindex
_version_ | 1804127469316341760 |
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adam_text | Contents
Introduction
to the Series
xiii
Foreword
xv
Preface
xvii
Acknowledgments
xix
Part I. Introduction
1.
Infrared Detector Characterization
3
1.1.
Historical background
3
1.2.
General classification of
IR
detectors
11
1.3.
Figures of merit
14
1.3.1.
Responsivity
15
1.3.2.
Noise equivalent power
15
1.3.3.
Detectivity
16
1.3.4.
Performance of
IR
systems
20
1.3.5.
Comments on D* and NETD values
25
References
26
2.
Focal Plane Arrays
31
2.1.
Overview of focal plane array architectures
34
2.2.
Monolithic focal plane arrays
39
2.2.1.
Charge coupled devices
39
2.2.2.
Charge injection devices
41
2.2.3.
Charge imaging matrixes
43
2.2.4.
Silicon FPAs:
IT-CCD, CSD,
and
MOS
FPAs
44
2.2.5.
Direct-charge-injection silicon FPAs
46
2.3.
Hybrid focal plane arrays
46
2.3.1.
Direct injection
48
2.3.2.
Buffered direct injection
50
2.3.3.
Gate modulation
51
2.4.
Maturity, cost, applications and technology directions
51
References
57
Part II. Infrared Thermal Detectors
3.
Theory of Thermal Detectors
65
3.1.
Principle of operation of thermal detectors
66
3.2.
Noise mechanisms in thermal detectors
69
viii Contents
3.3.
Detectivity and fundamental limits
71
References
75
4.
Thermopiles
77
4.1.
Basic principle and operation of thermopile
77
4.1.1.
Thermoelectric materials
79
4.1.2.
Peltier effect
81
4.2.
Thermopile theory
81
4.3.
Technology and properties
82
4.4.
Thermopile focal plane arrays
85
References
88
5.
Bolometers
91
5.1.
Basic principle and operation of bolometer
91
5.2.
Types of bolometers
92
5.2.1.
Metal bolometers
92
5.2.2.
Thermistors
93
5.2.3.
Semiconductor bolometers
95
5.2.4.
Composite bolometers
98
5.2.5.
Micromachined room temperature silicon
bolometers
99
5.2.6.
Superconducting bolometers
103
5.2.7.
High temperature superconducting bolometers
106
5.3.
Bolometer focal plane arrays
111
References
116
6.
Pyroelectric Detectors
121
6.1.
Basic principle and operation of pyroelectric detector
121
6.1.1.
Responsivity
122
6.1.2.
Noise and detectivity
126
6.2.
Pyroelectric material selection
129
6.2.1.
Single crystals
130
6.2.2.
Pyroelectric polymers
132
6.2.3.
Pyroelectric ceramics
133
6.2.4.
Dielectric bolometers
134
6.2.5.
Choice of material
136
6.3.
Pyroelectric vidicon
136
6.4.
Pyroelectric focal plane arrays
138
6.4.1.
Linear arrays
138
6.4.2.
Hybrid architecture
139
6.4.3.
Monolithic architecture
143
References
144
Contents ix
7.
Other Thermal Detectors
149
7.1.
Golay cell
149
7.2.
p
-η
junction as a thermal detector
150
7.3.
Comparison of thermal detectors
150
References
152
Part III. Infrared Photon Detectors
8.
Theory of Photon Detectors
155
8.1.
General theory of photodetectors
155
8.2.
Photoconducti
ve
detectors
160
8.2.1.
Intrinsic photoconductivity theory
161
8.2.2.
Extrinsic photoconductivity theory
173
8.2.3.
Operating temperature of intrinsic and extrinsic
infrared detectors
184
8.3.
p
-η
junction
photodiodes
189
8.3.1.
Ideal diffusion-limited
p-n
junctions
192
8.3.2.
Other current mechanisms
202
8.3.3.
Response time
215
8.4.
Schottky-barrier
photodiodes
216
8.4.1.
Schottky-Mott theory and its modifications
216
8.4.2.
Current transport processes
218
8.4.3.
Suicides
220
8.4.4.
Comparison of different types of semiconductor
photodetectors
221
8.5.
MIS photodiodes
222
8.6.
Photoelectromagnetic, magnetoconcentration, and Dember
detectors
227
8.6.1.
Photoelectromagnetic detectors
228
8.6.2.
Magnetoconcentration detectors
233
8.6.3.
Dember effect detectors
234
8.7.
Photon-drag detectors
236
References
237
9.
Heterodyne Detection
249
References
256
10.
Extrinsic Silicon and Germanium Detectors
259
10.1.
Technology
260
10.2.
Peculiarities of the operation of extrinsic photodetectors
262
10.3.
Performance of extrinsic photoconductors
264
10.3.1.
Silicon doped photoconductors
264
10.3.2.
Germanium doped photoconductors
267
x
Contents
10.4.
Blocked impurity band devices
269
10.5.
Solid state photomultipliers
274
10.6.
Focal plane arrays
275
10.6.1.
Monolithic photodetector arrays
275
10.6.2.
Accumulation-mode charge-injection device
(CID)
arrays
277
10.6.3.
Bulk-accumulation-mode arrays
278
10.6.4.
Extrinsic charge-extraction device (XCED) arrays
279
10.6.5.
Direct readout extrinsic photodetector arrays
281
10.6.6.
Blocked impurity band hybrid FPAs
283
References
285
11.
Schottky-Barrier Photoemissive Detectors
291
11.
1
.
Internal photoemission process
291
11.1.1.
Scattering effects
295
11.1.2.
Dark current
297
11.1.3.
Metal electrodes
299
11.2.
Control of Schottky-barrier detector cutoff wavelength
300
11.3.
Optimised structure and fabrication of Schottky-barrier
detectors
301
11.4.
Focal plane arrays
303
11.5.
Novel internal photoemissive detectors
313
11.5.1.
Heterojunction internal photoemissive detectors
313
11.5.2.
Homojunction internal photoemissive detectors
315
References
317
12.
III-V Detectors
325
12.1.
Some physical properties of III-V narrow gap
semiconductors
325
12.2.
Technology and properties of InSb photoconductive
detectors
331
12.3.
Technology and properties of InSb photoelectromagnetic
detectors
335
12.4.
Technology and properties of III-V
photodiodes
335
12.4.1.
InSb and InAs
photodiodes
335
12.4.2.
InSb non-equilibrium
photodiodes
345
12.5.
Technology and properties of
InAsi_vSbţ
detectors
350
12.5.1.
InAsi_vSbv-
photodiodes
350
12.5.2.
InAs^Sb,
photoconductors
358
12.6.
Technology and properties of InvGa|_vAs detectors
362
12.7.
Focal plane arrays
367
12.7.1.
Hybrid InSb/Si focal plane arrays
367
12.7.2.
InSb charge injection devices
370
Contents xi
12.7.3. InSb charge-coupled
devices
375
12.7.4. Hybrid InGaAs/Si
focal
plane
arrays
375
References
378
13. HgCdTe
Detectors
391
13.1. HgCdTe:
properties and technology
392
13.1.1.
Semiconductor properties
392
13.1.2.
Growth of bulk crystals and epilayers
399
13.1.3.
Defects and impurities
404
13.2.
Photoconductive detectors
406
13.2.1.
Technology
407
13.2.2.
Performance of photoconductive detectors
411
13.2.3.
Excluded photoconductors
418
13.2.4.
SPRITE detectors
423
13.3.
Photovoltaic detectors
429
13.3.1.
Fundamental limitation to
photodiode
performance and ideal design
430
13.3.2.
Non-fundamental sources of dark current
436
13.3.3.
Technology
439
13.3.4.
Properties of HgCdTe
photodiodes
444
13.3.5.
Dual-band detectors
452
13.3.6.
Non-equilibrium
photodiodes
456
13.3.7.
MIS photodiodes
457
13.3.8.
Schottky-barrier
photodiodes
461
13.4.
Focal plane arrays
461
13.4.1.
Hybrid FPAs
462
13.4.2.
Monolithic FPAs
474
References
479
14.
HgZnTe and HgMnTe Detectors
507
14.1.
HgCdTe versus alternative materials
507
14.2.
HgZnTe detectors
511
14.2.1.
Photoconductive detectors
511
14.2.2.
Photovoltaic detectors
512
14.3.
HgMnTe detectors
515
References
518
15.
IV-VI Detectors
521
15.1.
Some physical properties of lead salts
521
15.2.
Binary lead salt photoconductive detectors
526
15.2.1.
Deposition of lead salts
527
15.2.2.
Fabrication
528
15.2.3.
Performance of lead salt photoconductive detectors
529
xii Contents
15.3.
Photovoltaic detectors
533
15.3.1.
RoA product
534
15.3.2.
Technology and properties of
p
-η
junction
photodiodes
543
15.3.3.
Schottky-barrier
photodiodes
552
15.3.4.
Unconventional thin film
photodiodes
559
15.4.
Lead salt FPAs
562
References
564
16.
Semiconductor
Superlattice
and Quantum Well Detectors
577
16.1.
Semiconductor superlattices and quantum wells
578
16.1.1.
Confined electrons in relation to the quantum well
579
16.1.2.
Classification of multiple quantum wells and
superlattices
582
16.1.3.
Optical transitions in superlattices and multiple
quantum wells
588
16.1.4.
Intersubband relaxation time
594
16.2.
Intersubband quantum well III-V photoconductive detectors
595
16.2.1.
Technology of intersubband detectors
595
16.2.2.
Dark current
597
16.2.3.
Performance of GaAs/AlGaAs QWIPs
602
16.2.4.
p-doped GaAs/AlGaAs QWIPs
608
16.2.5.
QWIPs with other material systems
609
16.3. Superlattice miniband
QWIPs
611
16.4.
Hot-electron transistor detectors
615
16.5.
Multicolor QWIPs
617
16.6.
Focal plane arrays
621
16.6.1.
Uniformity
622
16.6.2.
Light coupling
623
16.6.3.
Array performance
625
16.7.
SiGe/Si QWIPs
630
16.8.
Strained layer superlattice detectors
633
16.8.1.
InAsSb/InSb strained layer superlattice detectors
635
16.8.2.
InAs/GalnSb strained layer superlattice detectors
637
16.9.
HgTe/CdTe superlattice detectors
644
16.10.
Doping superlattice detectors
647
References
650
Final remarks
667
References
672
Index
675
|
any_adam_object | 1 |
author | Rogalski, Antoni |
author_facet | Rogalski, Antoni |
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dewey-tens | 620 - Engineering and allied operations |
discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
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id | DE-604.BV012798809 |
illustrated | Illustrated |
indexdate | 2024-07-09T18:33:50Z |
institution | BVB |
isbn | 9056992031 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008703899 |
oclc_num | 41419819 |
open_access_boolean | |
owner | DE-703 DE-355 DE-BY-UBR DE-11 |
owner_facet | DE-703 DE-355 DE-BY-UBR DE-11 |
physical | XIX, 681 S. Ill., graph. Darst. |
publishDate | 2000 |
publishDateSearch | 2000 |
publishDateSort | 2000 |
publisher | Gordon & Breach |
record_format | marc |
series | Electrocomponent science monographs |
series2 | Electrocomponent science monographs |
spelling | Rogalski, Antoni Verfasser aut Infrared detectors A. Rogalski Amsterdam Gordon & Breach 2000 XIX, 681 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electrocomponent science monographs 10 Detetores larpcal Détecteurs de rayonnement infrarouge Infrared detectors Infrarotdetektor (DE-588)4161692-3 gnd rswk-swf Infrarotdetektor (DE-588)4161692-3 s DE-604 Electrocomponent science monographs 10 (DE-604)BV001898345 10 Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008703899&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Rogalski, Antoni Infrared detectors Electrocomponent science monographs Detetores larpcal Détecteurs de rayonnement infrarouge Infrared detectors Infrarotdetektor (DE-588)4161692-3 gnd |
subject_GND | (DE-588)4161692-3 |
title | Infrared detectors |
title_auth | Infrared detectors |
title_exact_search | Infrared detectors |
title_full | Infrared detectors A. Rogalski |
title_fullStr | Infrared detectors A. Rogalski |
title_full_unstemmed | Infrared detectors A. Rogalski |
title_short | Infrared detectors |
title_sort | infrared detectors |
topic | Detetores larpcal Détecteurs de rayonnement infrarouge Infrared detectors Infrarotdetektor (DE-588)4161692-3 gnd |
topic_facet | Detetores Détecteurs de rayonnement infrarouge Infrared detectors Infrarotdetektor |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008703899&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
volume_link | (DE-604)BV001898345 |
work_keys_str_mv | AT rogalskiantoni infrareddetectors |