GaN and related alloys: symposium held November 30 - December 4, 1998, Boston, Massachusetts, USA
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Warrendale, PA.
Materials Research Soc.
1999
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| Schriftenreihe: | Materials Research Society: Materials Research Society symposia proceedings
537 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Getr. Zählung Ill., graph. Darst. |
| ISBN: | 1558994432 |
Internformat
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| 264 | 1 | |a Warrendale, PA. |b Materials Research Soc. |c 1999 | |
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| adam_text | MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 537 GAN AND
RELATED ALLOYS SYMPOSIUM HELD NOVEMBER 30-DECEMBER 4,1998, BOSTON,
MASSACHUSETTS, U.S.A. EDITORS: STEPHEN J. PEARTON UNIVERSITY OF FLORIDA
GAINESVILLE, FLORIDA, U.S.A. CHIHPING KUO HEWLETT PACKARD CO. SAN JOSE,
CALIFORNIA, U.S.A. ALAN F. WRIGHT SANDIA NATIONAL LABORATORIES
ALBUQUERQUE, NEW MEXICO, U.S.A. TAKESHI UENOYAMA MATSUSHITA ELECTRIC
INDUSTRIAL CO., LTD. KYOTO, JAPAN IM1RISI MATERIALS RESEARCH SOCIETY
WARRENDALE, PENNSYLVANIA CONTENTS PREFACE ACKNOWLEDGMENTS MATERIALS
RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS PART I: GAN ELECTRONIC AND
PHOTONIC DEVICES INGAN/GAN/AIGAN-BASED LEDS AND LASER DIODES GL. 1.1 S.
NAKAMURA, M. SENOH, S. MAGAHAMA, N. IWASA, T. MATUSHITA, AND T. MUKAI
MATERIAL PROPERTIES OF GAN IN THE CONTEXT OF ELECTRON DEVICES GL .2.1
*. MORKOC, R. CINGOLANI, W. LAMBRECHT, B. OIL, TI-X. JIANG, J. LIN, D.
PAVLIDIS, AND K. SHENAI *NEAR DEFECT-FREE GAN SUBSTRATES GL.3.1 S.
POROWSKI *DRY AND WET ETCHING FOR GROUP III NITRIDES GL.4.1 /. ADESIDA,
*. YOUTSEY, A.T. PING, F. KHAN, L.T. ROMANO, AND O. BULMAN *CONTACT
ISSUES OF GAN TECHNOLOGY GL .5.1 D. QIAO, L.S. YU, S.S. LAU, Q.J.
SULLIVAN, S. RUVIMOU, AND Z. LILIENTAL-WEBER PYROELECTRIC AND
PIEZOELECTRIC PROPERTIES OF GAN-BASED MATERIALS GL.6.1 M.S. SHUR, A.D.
BYKHOVSKI, AND R. QASKA PART II: LASER DIODES AND SPECTROSCOPY
CHARACTERIZATION OF INGAN/GAN-BASED MULTI-QUANTUM WELL DISTRIBUTED
FEEDBACK LASERS G2.2.1 D. HOFSTETTER, R.L. THORNTON, L.T. ROMANO, D.P.
BOUR, M. KNEISSL, R.M. DONALDSON, AND C. DUNNROWICZ MECHANISMS OF
OPTICAL GAIN IN CUBIC GAN AND INGAN G2.3.1 J. MOIST, A. HOFFMANN, I.
BROSER, T. PREY, B. SCHOETTKER, DJ. AS, D. SCHIKORA, AND K. LISCHKA
CARRIER DYNAMICS OF ABNORMAL TEMPERATURE-DEPENDENT EMISSION SHIFT IN
MOCVD-GROWN INGAN EPILAYERS AND INGAN/GAN QUANTUM WELLS G2.4.1 Y-TI.
CHO, B.D. LITTLE, O.H. GAINER, J.J. SONG, S. KELLER, U.K. MISHRA, AND
S.P. DENBAARS *LNVITED PAPER MECHANISM FOR RADIATIVE RECOMBINATION IN
LNO.15GAO.85N/GAN MULTIPLE QUANTUM WELL STRUCTURES G2.5.1 B. MONEMAR,
J.P. BERGMAN, J. DALFORS, G. POZINA, B.E. SERNELIUS, P.O. TIOLTZ, TI.
AMANO, AND I. AKASAKI SPECTROSCOPIC STUDIES IN INGAN QUANTUM WELLS
G2.7.1 S.F. CHICHIBU, T. SOTA, *. WADA, S.P. DENBAARS, AND S. NAKAMURA
COMPOSITION DEPENDENCE OF THE BANDGAP ENERGY OF LN X GAI- X N LAYERS ON
GAN (X 0.15) GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION G2.8.1 J.
WAGNER, A. RAMAKRISHNAN, D. BEHR, M. MAIER, N. TLERRES, N. KUNZER, TI.
OBLOH, AND K-TI. BACHERN OPTICAL GAIN SPECTRA IN INGAN/GAN QUANTUM WELLS
WITH THE COMPOSITIONAL FLUCTUATIONS G2.9.1 T. UENOYAMA PART III: GROWTH
AND CHARACTERIZATION HYDROGEN AND NITROGEN AMBIENT EFFECTS ON EPITAXIAL
LATERAL OVERGROWTH (ELO) OF GAN VIA METALORGANIC VAPOR-PHASE EPITAXY
(MOVPE) G3.1.1 FT. TADATOMO, Y. OHUCHI, TI. OKAGAWA, TI. ITOH, TI.
MIYAKE, AND K. HIRAMATSU PENDEO-EPITAXY OF GALLIUM NITRIDE AND ALUMINUM
NITRIDE FILMS AND HETEROSTRUCTURES ON SILICON CARBIDE SUBSTRATE G3.2.1
T. QEHRKE, K.J. LINTHICUM, D.B. THOMSON, P. RAJAGOPAL, A.D. BATCHELOR,
AND R.F. DAUIS PIEZOELECTRIC EFFECTS IN GAN/AIGAN MULTIPLE QUANTUM WELLS
PROBED BY PICOSECOND TIME-RESOLVED PHOTOLUMINESCENCE G3.3.1 U.S. KIM,
J.Y. LIN, TI.X. JIANG, W.W. CHOW, A. BOTCHKAREU, AND TI. MORKOC
NITRIDATION OF GAAS (001)-2X4 SURFACE STUDIED BY AUGER ELECTRON
SPECTROSCOPY G3.4.1 /. AKSENOV, Y. LIAKADA, AND TI. OKUMURA TEMPERATURE
EFFECT ON THE QUALITY OF AIN THIN FILMS G3.7.1 M.P. THOMPSON, A.R.
DREWS, C. HUANG, AND O.W. AUNER EPITAXIAL GROWTH AND STRUCTURAL
CHARACTERIZATION OF SINGLE CRYSTALLINE ZNGEN 2 G3.8.1 L.D. ZHU, P.M.
MARUSKA, P.E. LIORRIS, P.W. YIP, AND L.O. BOUTHILLETTE CUBIC GAN
HETEROEPITAXY ON THIN-SIC-COVERED SI(001) G3.9.1 Y. LIIROYAMA AND M.
TAMURA *LNVITED PAPER INFLUENCE OF ACTIVE NITROGEN SPECIES ON THE
NITRIDATION RATE OF SAPPHIRE G3.10.1 A.J. **/*, U.S. ZIEMER, M.R.
MILLECCHIA, CD. STINESPRING, AND *.*. MYERS STRUCTURAL STUDY OF
GAN(AS.P) LAYERS GROWN ON (0001) GAN BY GAS SOURCE MOLECULAR BEAM
EPITAXY G3.11.1 T-Y. SEONG, I-T. BAE, Y. ZHAO, AND C.W. TU GAN GROWTH BY
REMOTE PLASMA MOCVD: CHEMISTRY AND KINETICS BY REAL TIME ELLIPSOMETRY
G3.12.1 M. LOSURDO, P. CAPEZZUTO, AND O. BRUNO DEFECTS IN GAN PYRAMIDS
GROWN ON SI(L 11) SUBSTRATES BY SELECTIVE LATERAL OVERGROWTH G3.13.1 Z.
MAO, X. MCKERNAN, C.B. CARTER, W. YANG, AND SA. MCPHERSON ELECTRICAL AND
PHOTOELECTRICAL CHARACTERIZATION OF DEEP DEFECTS IN CUBIC GAN ON GAAS
G3.14.1 M. LISKER, A. KRTSCHIL, H. WITTE, J. CHRISTEN, D.J. AS, B.
SCHOETTKER, AND K. LISCHKA PRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN
INGAN/GAN MULTIPLE QUANTUM WELLS G3.15.1 W. SHAN, J.W. AGER III, W.
WALUKIEWICZ, E.E. MAILER, M.D. MCCLUSKEY, N.M. JOHNSON, AND D.P. BOUR
DOMAIN STRUCTURE OF THICK GAN LAYERS GROWN BY HYDRIDE VAPOR PHASE
EPITAXY G3.16.1 T. PASKOVA, E.B. SVEDBERG, L.D. MADSEN, R. YAKIMOVA,
I.Q, IVANOU, A. HENRY, AND B. MONEMAR CHARACTERIZATION OF BE-LMPLANTED
GAN ANNEALED AT HIGH TEMPERATURES G3.17.1 C. RONNING, K.J. LINTHICUM,
E.P. CARLSON, P.J. HARTLIEB, D.B. THOMSON, T. QEHRKE, AND R.F. DAVIS
THERMAL RESIDUAL STRESS MODELING IN AIN AND GAN MULTILAYER SAMPLES
G3.18.1 K. WANG AND R.R. REEBER STRONG PIEZOELECTRIC EFFECTS IN
UNSTRAINED GAN QUANTUM WELLS G3.19.1 R. LANGER, J. SIMON, O. KONOVALOU,
N.T. PELEKANOS, R. ANDRE, A. BARSKI, AND M. OODLEWSKI OPTICAL
ABSORPTION, RAMAN, AND PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF
INHOMOGENEOUS INGAN FILMS G3.22.1 L.H. ROBINS, A.J. PAUL, CA. PARKER,
J.C. ROBERTS, S.M. BEDAIR, E.L. PINER, AND NA. EL-MASRY GROWTH OF
ORIENTED THICK FILMS OF GALLIUM NITRIDE FROM THE MELT G3.23.1 J.S. DYCK,
K. HASH, M.T. OROSSNER, C.C. HAYMAN, A. ARGOITIA, N. YANG, M-H. HONG,
M.E. KORDESCH, AND J.C. ANGUS P- AND N-TYPE DOPING OF MBE GROWN CUBIC
GAN/GAAS EPILAYERS G3.24 DJ. AS, T. SIMONSMEIER, J. BUSCH, *. SCHOETTKER,
M. LUBBERS, J. MIMKES, D. SCHIKORA, K. LISCHKA, W. KRIEGSEIS, W.
BURKHARDT, AND B.K. MEYER CUBIC INGAN GROWN BY MOCVD G3.25 J.B. LI, H.
YANG, L.X. ZHENG, D.P. XU, AND Y.T. WANG OPTICAL INVESTIGATIONS OF AIGAN
ON GAN EPITAXIAL FILMS G3.26 O. STEUDE, T. CHRISTMANN, B.K. MEYER, A.
QOELDNER, A. HOFFMANN, F. BERTRAM, J. CHRISTEN, H. AMANO, AND I. AKASAKI
EFFECTS OF SURFACE PREPARATION ON EPITAXIAL GAN ON 6H-SIC DEPOSITED VIA
MOCVD G3.29 J. EISNER, TH. FRAUENHEIM, M. HAUGK, R. GUTIERREZ, R. JONES,
AND M.I. FLEGGIE ELECTRON BEAM INDUCED IMPURITY ELECTRO-MIGRATION IN
UNINTENTIONALLY DOPED GAN G3.30 M. TOTH, K. FLEISCHER, AND M.R. PHILLIPS
STATISTICAL ANALYSIS OF LOCAL COMPOSITION AND LUMINESCENCE IN INGAN
GROWN BY MOLECULAR BEAM EPITAXY G3.33 S. EINFELDT, T. BOETTCHER, D.
TLOMMEL, H. SELKE, F.L. RYDER, F. BERTRAM, T. RIEMANN, D. RUDLOFF, AND
J. CHRISTEN RANGES OF DEPOSITION TEMPERATURES APPLICABLE FOR
METALORGANIC VAPOR PHASE EPITAXY OF GAN FILMS VIA THE TECHNIQUE OF
PENDEO-EPITAXY G3.37 D.B. THOMSON, T. OEHRKE, K.J. LINTHICUM, P.
RAJAGOPAL, AND R.F. DAVIS PENDEO-EPITAXY*A NEW APPROACH FOR LATERAL
GROWTH OF GALLIUM NITRIDE STRUCTURES G3.38 T.S. ZHELEVA, S.A. SMITH,
D.B. THOMSON, T. OEHRKE, K.J. LINTHICUM, P. RAJAGOPAL, E. CARLSON, W.M.
ASHMAWI, AND R.F. DAVIS EFFECTS OF SURFACE PREPARATION ON EPITAXIAL GAN
ON 6H-SIC DEPOSITED VIA MOCVD G3.39 Z.Y. XIE, C.H. WEI, L.Y. LI, J.TL.
EDGAR, J. CHAUDHURI, AND * IGNATIEV HIGH-QUALITY HYDROTHERMAL ZNO
CRYSTALS G3.40 M. SUSCAVAGE, M. HARRIS, D. BLISS, P. YIP, S-Q. WANG, D.
SCHWALL, L. BOUTHILLETTE, J. BAILEY, M. CALLAHAN, D.C. LOOK, D.C.
REYNOLDS, R.L. JONES, AND C.W. LITTON DISORDERING OF INGAN/GAN
SUPERLATTICES AFTER HIGH-PRESSURE ANNEALING G3.42 M.D. MCCLUSKEY, L.T.
ROMANO, B.S. KRUSOR, D. HOFSTETTER, D.P. BOUR, M. KNEISSL, N.M. JOHNSON,
T. SUSKI, AND J. JUN SYNTHESIS OF NITROGEN-RICH GANAS SEMICONDUCTOR
ALLOYS AND ARSENIC-DOPED GAN BY METALORGANIC CHEMICAL VAPOR DEPOSITION
G3.44.1 M. QHERASIMOUA, B. QAFFEY, P. MITEV, L.J. QUIDO, K.L. CHANG,
K.C. TISIEH, S. MITHA, AND J. SPEAR SI DELTA DOPED GAN GROWN BY
LOW-PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION G3.49.1 J-TI. KIM,
Q.N. YANG, S.C. CHOI, J.Y. CHOI, H.K. CHO, K.Y. LIM, AND H.J. LEE
INFLUENCE OF THE FIRST PREPARATION STEPS ON THE PROPERTIES OF GAN LAYERS
GROWN ON 6H-SIC BY MBE G3.50.1 K. LANTIER, A. RIZZI, D. QUGGI, H. LUETH,
B. NEUBAUER, D. QERTHSEN, S. FRABBONI, G. COIL, AND R. CINGOLANI EFFECTS
OF SUSCEPTOR GEOMETRY ON GAN GROWTH ON SI(L 11) WITH A NEW MOCVD REACTOR
G3.53.1 Y. OAO, D.A. QULINO, AND R. HIGGINS STRUCTURE OF AIN ON SI (111)
DEPOSITED WITH METALORGANIC VAPOR PHASE EPITAXY G3.56.1 E. REHDER, M.
ZHOU, L. ZHANG, N.R. PERKINS, S.E. BABCOCK, AND T.F. KUECH INFLUENCE OF
DOPING ON THE LATTICE DYNAMICS OF GALLIUM NITRIDE G3.57.1 A. KASCHNER,
H. SIEGLE, A. HOFFMANN, C. THOMSEN, U. BIRKLE, S. EINFELDT, AND D.
TIOMMEL MOLECULAR BEAM EPITAXY OF HIGH QUALITY INGAN ALLOYS USING
AMMONIA: OPTICAL AND STRUCTURAL PROPERTIES G3.59.1 N. ORANDJEAN, J.
MASSIES, M. LEROUX, M. LAUGT, P. VENNEGUES, S. DALMASSO, P. RUTERANA, L.
HIRSCH, AND S. BARRIERE PROPERTIES OF EPITAXIAL ZNO THIN FILMS FOR GAN
AND RELATED APPLICATIONS G3.60.1 H. SHEN, M. WRABACK, J. PAMULAPATI, S.
LIANG, C. OORLA, AND Y. LU COMPARATIVE GROWTH OF AIN ON SINGULAR AND
OFF-AXIS 6H AND 4H-SIC BY MOCVD G3.61.1 S. WILSON, C.S. DICKENS, J.
ORIFFIN, AND M.O. SPENCER GALLIUM NITRIDE GROWTH USING DIETHYLGALLIUM
CHLORIDE AS AN ALTERNATIVE GALLIUM SOURCE G3.62.1 L. ZHANG, R. ZHANG,
M.P. BOLESLAWSKI, AND T.F. KUECH PIEZOELECTRIC LEVEL SPLITTING IN
GALNN/GAN QUANTUM WELLS G3.66.1 C. WETZEL, T. TAKEUCHI, H. AMANO, AND I.
AKASAKI PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF CARBON-DOPED
GALLIUM NITRIDE G3.67.1 E.E. REUTER, R. ZHANG, T.F. KUECH, AND S.G.
BISHOP GAN CVD REACTIONS: HYDROGEN AND AMMONIA DECOMPOSITION AND THE
DESORPTION OF GALLIUM G3.68.1 M.E. BARTRAM AND J.R. CREIGHTON
QUANTUM-CONFINED STARK EFFECT AND RECOMBINATION DYNAMICS OF SPATIALLY
INDIRECT EXCITONS IN MBE-GROWN GAN-AIGAN QUANTUM WELLS G3.69.1 P.
LEFEBURE, B. OIL, J. ALLEGRE, H. MATHLEU, N. GRANDJEAN, M. LEROUX, J.
MASSTES, AND P. BIGENWALD ENHANCED GAN DECOMPOSITION AT MOVPE PRESSURES
G3.70.1 D.D. KOLESKE, A.E. WICKENDEN, R.L. HENRY, M.E. TWIGG, J.*
CULBERTSON, AND RJ. GORMAN DEFECT STATES IN SIC/GAN- AND
SIC/AIGAN/GAN-HETEROSTRUCTURES CHARACTERIZED BY ADMITTANCE AND
PHOTOCURRENT SPECTROSCOPY G3.71.1 N. WITTE, A. KRTSCHLL, M. LISKER, J.
CHRISTEN, F. SCHOLZ, AND J. OFF MICROSTRUCTURE OF GAN GROWN ON (111) SI
BY MOCVD G3.72.1 D.M. FOLLSTAEDT, J. HAN, P. PROUENCTO, ANDJ.G. FLEMING
ION CHANNELING ANALYSIS OF GALLIUM NITRIDE IMPLANTED WITH DEUTERIUM
G3.73.1 W.U. WAMPLER AND S.M. MYERS OPTICAL PROPERTIES OF SI-DOPED AL X
GAI. X N/ALYGA,. Y N (X = 0.24-0.53, * = 0.11) MULTI-QUANTUM-WELL
STRUCTURES G3.74.1 TI. TILRAYAMA AND Y. AOYAGI EPTIAXIAL GROWTH OF
ILL-NITRIDE LAYERS ON ALUMINUM NITRIDE SUBSTRATES G3.76.1 LJ.
SCHOWALTER, Y. SHUSTERMAN, R. WANG, I. BHAT, G. ARUNMOZHL, AND GA. SLACK
EFFECT OF BUFFER LAYER AND LLL/V RATIO ON THE SURFACE MORPHOLOGY OF GAN
GROWN BY MBE G3.77.1 E.C. PLQUETTE, P.M. BRTDGER, R.A. BEACH, AND *.*.
MCGTLL RELAXATION PHENOMENA IN GAN/AIN/6H-SIC HETEROSTRUCTURES G3.78.1
N.V. EDWARDS, A.D. BATCHELOR, I.A. BUYANOVA, L.D. MADSEN, M.D. BREMSER,
R.F. DAVIS, D.E. ASPNES, AND B. MONEMAR GROWTH AND CHARACTERIZATION OF B
X GAI_ X N ON 6H-SIC (0001) BY MOVPE G3.79.1 C.H. WET, Z.Y. XLE, J.TT.
EDGAR, K.C. ZENG, J.Y. LIN, *.*. JIANG, C. IGNATTEU, J. CHAUDHURL, AND
D.H. BRASKL OPTICAL AND STRUCTURAL PROPERTIES OF ER 3+ -DOPED GAN GROWN
BY MBE G3.80.1 R.H. BIRKHAHN, R. HUDGTNS, D.S. LEE, B.K. LEE, AJ.
STECKL, A. SALEH, R.G. WILSON, AND J.M. ZAVADA PART IV: EPITAXIAL
LATERAL OVERGROWTH AND SELECTIVE GROWTH SELECTIVE AREA GROWTH (SAG) AND
EPITAXIAL LATERAL OVERGROWTH (ELO) OF GAN USING TUNGSTEN MASK G4.1.1 Y.
KAWAGUCHL, S. NAMBU, H. SONE, M. YAMAGUCHL, H. MLYAKE, K. TLLRAMATSU, N.
SAWAKL, Y. IYECHTKA, AND T. MAEDA EPITAXIAL LATERAL OVERGROWTH OF GAN ON
SIC AND SAPPHIRE SUBSTRATES G4.3.1 Z. YU, M.A.L. JOHNSON, J.D. BROWN,
*.*. EL-MASRY, J.F. MUTH, J.W. COOK, JR., J.F. SCHETZINA, K.W. HABERERN,
H.S. KONG, AND JA. EDMOND FAST LATERAL EPITAXIAL OVERGROWTH OF GALLIUM
NITRIDE BY METALORGANIC CHEMICAL VAPOR DEPOSITION USING A TWO-STEP
PROCESS G4.5.1 H. MARCHAND, J.P. IBBETSON, P.T. FINI, X.TI. WU, S.
KELLER, S.P. DENBAARS, J.S. SPECK, AND U.K. MISHRA *** STUDY OF DEFECTS
IN LATERALLY OVERGROWN GAN LAYERS G4.6.1 Z. LILIENTAL-WEBER, M.
BENAMARA, W. SWIDER, J. WASHBURN, J. PARK, P.A. ORUDOWSKL, * J. EITLNG,
AND R.D. DUPUIS EPITAXIAL LATERAL OVERGROWTH OF GAN WITH CHLORIDE-BASED
GROWTH CHEMISTRIES IN BOTH HYDRIDE AND METALORGANIC VAPOR PHASE EPITAXY
G4.7.1 *. ZHANG, L. ZHANG, D.M. HANSEN, M.P. BOLESLAWSKI, K.L. CHEN,
D.Q. LU, B. SHEN, Y.D. ZHENG, AND T.F. KUECH GAN: FROM SELECTIVE AREA TO
EPITAXIAL LATERAL OVERGROWTH G4.8.1 X. U, S.G. BISHOP, AND J J. COLEMAN
PROCESS ROUTES FOR LOW DEFECT-DENSITY GAN ON VARIOUS SUBSTRATES
EMPLOYING PENDEO-EPITAXIAL GROWTH TECHNIQUES G4.9.1 K.J. LLNTHICUM, T.
OEHRKE, D.B. THOMSON, K.M. TRACY, E.P. CARLSON, T.P. SMITH, T.S.
ZHELEVA, C.A. ZORMAN, M. MEHREGANY, AND R.F. DAUIS HOMOEPITAXIAL AND
HETEROEPITAXIAL GALLIUM NITRIDE GROWN BY MOLECULAR BEAM EPITAXY G4.11.1
C.T. FOXON, T.S. CHENG, D. KORAKAKIS, S.V. TIOVIKOV, KP. CAMPION, I.
QRZEGORY, S. POROWSKI, M. ALBRECHT, AND H.P. STRUNK PART V: THEORY.
DEFECTS. TRANSPORT. BANDSTRUCTURE COMPUTATIONAL MATERIALS SCIENCE, AN
INCREASINGLY RELIABLE ENGINEERING TOOL: ANOMALOUS NITRIDE BANDSTRUCTURES
AND DEVICE CONSEQUENCES G5.1.1 A. SHER, M. VAN SCHILFGAARDE, MA.
BERDING, S. KRISHNAMURTHY, ANDA-B. CHEN ABSORPTION COEFFICIENT AND
REFRACTIVE INDEX OF GAN, AIN, AND AIGAN ALLOYS G5.2.1 J.F. MUTH, J.D.
BROWN, M.A.L. JOHNSON, Z. YU, R.M. KOLBAS, J.W. COOK, JR., AND J.F.
SCHETZINA DEFECT COMPLEXES AND NON-EQUILIBRIUM PROCESSES UNDERLYING THE
P-TYPE DOPING OF GAN G5.3.1 FA. REBOREDO AND S.T. PANTELIDES INVITED
PAPER ROLE OF THE SUBSTITUTIONAL OXYGEN DONOR IN THE RESIDUAL N-TYPE
CONDUCTIVITY IN GAN G5.4.1 W.M. CHEN, I.A. BUYANOVA, MT. WAGNER, B.
MONEMAR, J.L. LINDSTROEM, H. AMANO, AND I. AKASAKI INTERFACE EFFECTS ON
THE PERSISTENT PHOTOCONDUCTIVITY IN THIN GAN AND AIGAN FILMS G5.5.1 O.P.
SEIFERT, *. KIRFEL, M. MUENZET N.T. HIRSCH, J. PARISI, M. KELLY, O.
AMBACHER, AND M. STUTZMANN STUDIES ON CARBON AS ALTERNATIVE P-TYPE
DOPANT FOR GALLIUM NITRIDE G5.6.1 U. BIRKLE, M. FEHRER, V. KIRCHNER, S.
EINFELDT, D. HOMMEL, S. STRAUF, P. MICHLER, AND J. OUTOWSKI *THE
BEHAVIOR OF ION-IMPLANTED HYDROGEN IN GALLIUM NITRIDE G5.8.1 S.M. MYERS,
T.J. FLEADLEY, CR. MILLS, J. HAN, O.A. PETERSEN, C.H. SEAGER, AND W.R.
WAMPLER SPECTROSCOPY OF PROTON IMPLANTED GAN G5.9.1 M.O. WEINSTEIN, M.
STAVOLA, C.Y. SONG, * BOZDOG, H. PRZBYLINSKA, Q.D. WATKINS, SJ. PEARTON,
AND R.Q. WILSON A CRITICAL COMPARISON BETWEEN MOVPE AND MBE GROWTH OF
LLL-V NITRIDE SEMICONDUCTOR MATERIALS FOR OPTO-ELECTRONIC DEVICE
APPLICATIONS G5.10.1 M.A.L. JOHNSON, Z. YU, J.D. BROWN, FA. KOECK, H.A.
EL-MASRY, H.S. KONG, J.A. EDMOND, J.W. COOK, JR., ANDJ.F. SCHETZINA PART
VI: SURFACES. THEORY. PROCESSING. DEVICES CHARACTERISTIC TEMPERATURE
ESTIMATION OF GAN-BASED LASERS G6.2.1 T. HONDA, H. KAWANISHI, T.
SAKAGUCHI, F. KOYAMA, AND K. IGA GAN NANOTUBES G6.3.1 S.M. LEE, Y.H.
LEE, Y.O. HWANG, J. EISNER, D. POREZAG, AND T. FRAUENHEIM
CHARACTERIZATION OF HOT-ELECTRON EFFECTS ON FLICKER NOISE IN LLL-V
NITRIDE BASED HETEROJUNCTIONS G6.4.1 W.Y. HO, W.K. FONG, * SURYA, K.Y.
TONG, L.W. LU, AND W.K. OE CHARACTERIZATION OF FLICKER NOISE IN GAN
BASED MODFETS AT LOW DRAIN BIAS G6.5.1 W.Y. HO, W.K. FONG, * SURYA, K.Y.
TONG, W. KIM, A. BOTCHKAREV, AND H. MORKOC MONTE CARLO SIMULATION OF
HALL EFFECT IN N-TYPE GAN G6.6.1 J.D. ALBRECHT, P.P. RUDEN, E. BELLOTTI,
AND K.F. BRENNAN INVITED PAPER BASE TRANSIT TIME IN ABRUPT
GAN/LNGAN/GAN AND AIGAN/GAN/AIGAN HBTS G6.7.1 S-Y. CHILI, A.F.M. ANWAR,
AND S. WU THEORETICAL STUDIES OF ZNO AND RELATED MG X ZNI_ X O ALLOY
BANDSTRUCTURES G6.8.1 W.R.L. LAMBRECHT, S. LIMPIJUMNONG, AND B. SEGALL
TRANSPORT, GROWTH MECHANISMS, AND MATERIAL QUALITY IN GAN EPITAXIAL
LATERAL OVERGROWTH G6.9.1 M.E. COLTRIN, C.C. WILLAN, M.E. BARTRAM, J.
HAN, N. MISSERT, M.TL. CRAWFORD, AND AG. BACA ELECTRONIC STRUCTURE AND
OPTICAL PROPERTIES OF ZNGEN2 G6.11.1 S. LIMPIJUMNONG, S.N. RASHKEEV, AND
W.R.L. LAMBRECHT ELECTRICAL CHARACTERIZATION OF DEFECTS INTRODUCED IN
N-GAN DURING HIGH ENERGY PROTON AND HE-ION IRRADIATION G6.12.1 SA
GOODMAN, F.D. AURET, F.K. KOSCHNICK, J-M. SPAETH, B. BEAUMONT, AND P.
GIBART ELECTRICAL CHARACTERIZATION OF SPUTTER DEPOSITION INDUCED DEFECTS
IN N-GAN G6.13.1 F.D. AURET, SA. GOODMAN, F.K. KOSCHNICK, J-M. SPAETH,
B. BEAUMONT, AND P. GIBART PHOTOLUMINESCENCE OF FS-GAN TREATED IN
ALCOHOLIC SULFIDE SOLUTIONS G6.14.1 Y.V. ZHILYAEV, M.E. KOMPAN, E.V.
KONENKOVA, AND S.D. RAEVSKII EFFECT OF OXYGEN ION IMPLANTATION IN
GALLIUM NITRIDE G6.15.1 W. JIANG, W.J. WEBER, S. THEVUTHASAN, G.J.
EXARHOS, AND * J. BOZLEE PIEZOELECTRIC FIELD EFFECT ON OPTICAL
PROPERTIES OF GAN/GALNN/AIGAN QUANTUM WELLS G6.20.1 J.S. IM, H. KOLLMER,
O. GFROERER, J. OFF, F. SCHOLZ, AND A. HANGLEITER CONTROL OF THE POLARITY
AND SURFACE MORPHOLOGY OF GAN FILMS DEPOSITED ON C-PLANE SAPPHIRE
G6.23.1 M. SUMIYA, T. OHNISHI, M. TANAKA, A. OHTOMO, M. KAWASAKI, M.
YOSHIMOTO, H. KOINUMA, K. OHTSUKA, AND S. FUKE THERMAL ANNEALING OF
INGAN/GAN STRAINED-LAYER QUANTUM WELL G6.25.1 M.C.Y. CHAN, K-O. TSANG,
E.H. LI, AND S.P. DENBAARS XPS STUDY OF OXYGEN ADSORPTION ON (3X3)
RECONSTRUCTED MBE GROWN GAN SURFACES G6.26.1 *.*. BEACH, E.C. PIQUETTE,
AND T.C. MCGILL THERMAL STABILITY OF GAN INVESTIGATED BY RAMAN
SCATTERING G6.28.1 M. KUBALL, F. DEMANGEOT, J. FRANDON, M.A. RENUCCI,
FL. GRANDJEAN, AND O. BRIOT ELECTROLUMINESCENCE PROPERTIES OF
INGAN/AIGAN/GAN LIGHT EMITTING DIODES WITH QUANTUM WELLS G6.29.1 A.E.
YUNOVICH, V.E. KUDRYASHOV, **. TUERKIN, A.N. KOVALEV, AND F.I. MANYAKHIN
ELECTRICAL CHARACTERIZATION OF MOVPE-GROWN P-TYPE GAN:MG AGAINST
ANNEALING TEMPERATURE G6.31.1 SHIZUO FUJITA, M. FUNATO, D-C. PARK, Y.
IKENAGA, AND SHIGEO FUJITA RAPID THERMAL PROCESSING OF IMPLANTED GAN UP
TO 1500C G6.33.1 X.A. CAO, SJ. PEARTON, R.K. SINGH, C.R. ABERNATHY, J.
HAN, RJ. SHUL, DJ. RIEGER, J.C. ZOLPER, R.O. WILSON, M. FU, J.A. SEKHAR,
HJ. QUO, AND SJ. PENNYCOOK EXTRINSIC PERFORMANCE LIMITATIONS OF
AIGAN/GAN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS G6.35.1 P.P. RUDEN,
J.D. ALBRECHT, A. SUTANDI, S.C. BINARI, K. IKOSSI-ANASTASIOU, M.O.
ANCONA, R.L. HENRY, D.D. HOLESKE, AND A.E. WICKENDEN BEHAVIOR OF W AND
WSI X CONTACT METALLIZATION ON N- AND P-TYPE GAN G6.39.1 X.A. CAO, F.
REN, J.R. LOTHIAN, SJ. PEARTON, C.R. ABERNATHY, J.C. ZOLPER, M.W. COLE,
A. ZEITOUNY, M. EIZENBERG, AND RJ. SHUL PHOTOELECTROCHEMICAL ETCHING OF
LN X GAI- X N G6.40.1 H. CHO, S.M. DONOVAN, C.R. ABERNATHY, SJ. PEARTON,
F. REN, J. HAN, AND RJ. SHUL MODELING OF A GAN BASED STATIC INDUCTION
TRANSISTOR G6.41.1 O.E. BUNEA, S.T. DUNHAM, AND T.D. MOUSTAKAS CONTACT
RESISTANCE OF INGAN/GAN LIGHT EMITTING DIODES GROWN ON THE PRODUCTION
MODEL MULTI-WAFER MOVPE REACTOR G6.42.1 R.W. CHUANG, A.Q. ZOU, H.P. LEE,
ZJ. DONG, F.F. XIONG, R. SHIH, M. BREMSER, AND H. JUERGENSEN CRYSTAL
STRUCTURE AND DEFECTS IN NITROGEN-DEFICIENT GAN G6.43.1 S. OKTYABRSKY,
K. DOVIDENKO, A.K. SHARMA, V. JOSHKIN, AND J. NARAYAN INFLUENCE OF
SI-DOPING ON CARRIER LOCALIZATION OF MOCVD-GROWN INGAN/GAN MULTIPLE
QUANTUM WELLS G6.44.1 Y-H. CHO, TJ. SCHMIDT, S. BIDNYK, J J. SONG, S.
KELLER, U.K. MISHRA, AND S.P. DENBAARS THEORY OF THE GAIN
CHARACTERISTICS OF INGAN/AIGAN QD LASERS G6.45.1 A.D. ANDREEU AND E.P.
O REILLY STUDY OF THIN FILMS POLARITY OF GROUP III NITRIDES G6.46.1 K.
DOVIDENKO, S. OKTYABRSKY, J. NARAYAN, AND M. RAZEGHI TEMPERATURE
DEPENDENCE OF BOUND EXCITON EMISSIONS IN GAN G6.47.1 D.O. CHTCHEKINE,
O.D. GILLILAND, Z.C. FENG, SJ. CHUA, DJ. WOLFORD, S.E. RALPH, M.J.
SCHURMAN, AND I. FERGUSON ROOM TEMPERATURE LASER ACTION IN LATERALLY
OVERGROWN GAN PYRAMIDS ON (111) SILICON G6.48.1 S. BIDNYK, B.D. LITTLE,
Y.H. CHO, J. KRASINSKI, J.J. SONG, W. YANG, AND S.A. MCPHERSON NILN AS
AN OHMIC CONTACT TO P-GAN G6.49.1 D.B. INGERLY, Y.A. CHANG, AND Y. CHEN
GAN P-N STRUCTURES FABRICATED BY MG ION IMPLANTATION G6.53.1 E.V.
KALININA, V.A. SOLOU EU, A.S. ZUBRILOV, V.A. DMITRIEV, AND A.P. KOVARSKY
AMPLIFICATION PATH LENGTH DEPENDENCE STUDIES OF STIMULATED EMISSION FROM
OPTICALLY PUMPED INGAN/GAN MULTIPLE QUANTUM WELLS G6.54.1 T.J. SCHMIDT,
S. BIDNYK, Y-H. CHO, A.J. FISCHER, J.J. SONG, S. KELLER, U.K. MISHRA,
AND S.P. DENBAARS INDUCTIVELY COUPLED PLASMA ETCHING OF ILL-NITRIDES IN
CL 2 /XE, CL 2 /AR AND CL 2 /HE G6.56.1 H. CHO, Y.B. HAHN, D.C. HAYS,
K.B. JUNG, S.M. DONOVAN, CR. ABERNATHY, S.J. PEARTON, AND * J. SHUL
FOCUSED ION BEAM ETCHING OF GAN G6.57.1 C. FLIERL, L.H. WHITE, M.
KUBALL, P.J. HEARD, O.C. ALLEN, *. MARINELLI, J.M. RORISON, R.V. PENTY,
Y. CHEN, AND S.Y. WANG PHYSICS-BASED INTRINSIC MODEL FOR AIGAN/GAN HEMTS
G6.58.1 S. WU, R.T. WEBSTER, AND A.F.M. ANWAR ENSEMBLE MONTE CARLO STUDY
OF ELECTRON TRANSPORT IN BULK INDIUM NITRIDE G6.59.1 E. BELLOTTI, B.
DOSHI, K.F. BRENNAN, AND P.P. RUEDEN PHONON DYNAMICS AND LIFETIMES OF AIN
AND GAN CRYTALLITES G6.65.1 L. BERGMAN, D. ALEXSON, R.J. NEMANICH, M.
DUTTA, **. STROSCIO, * BALKAS, AND R.F. DAVIS PART VII: LEDS. UV
DETECTORS. AND OPTICAL PROPERTIES SYMMETRY OF ELECTRONS AND HOLES IN
LIGHTLY PHOTO-EXCITED INGAN LEDS G7.4.1 T.A. KENNEDY, E.R. QLASER, W.E.
CARLOS, P.P. RUDEN, AND S. RIAKAMURA FABRICATION OF SMOOTH GAN-BASED
LASER FACETS G7.5.1 DA. STOCKER, E.F. SCHUBERT, K.S. BOUTROS, AND J.M.
REDWING UNIFORMITY AND PERFORMANCE CHARACTERIZATION OF GAN P-I-N
PHOTODETECTORS FABRICATED FROM 3-INCH EPITAXY G7.6.1 R. HICKMAN IL J.J.
KLAASSEN, J.M. VAN HOVE, A.M. WOWCHAK, * POLLEY, M.F. ROSAMOND, AND P.P.
CHOW MONITORING AND CONTROLLING OF STRAIN DURING MOCVD OF AIGAN FOR UV
OPTOELECTRONICS G7.7.1 J. HAN, M.H. CRAWFORD, R.J. SHUL, SJ. TIEARNE, E.
CHASON, J J. FIGIEL, AND M. BANAS GENERATION RECOMBINATION NOISE IN GAN
PHOTOCONDUCTING DETECTORS G7.8.1 M. MISRA, D. DOPPALAPUDI, A.V. SAMPATH,
T.D. MOUSTAKAS, AND P.H. MCDONALD PART VIII: ELECTRONIC DEVICES AND
PROCESSING *GROUP-LLL NITRIDE ETCH SELECTIVITY IN BCI 3 /CI 2 ICP
PLASMAS G8.1.1 RJ. SHUL, L. ZHANG, CO. WILLISON, J. HAN, SJ. PEARTON, J.
HONG, CR. ABERNATHY, AND L.F. LESTER PATTERNING LLL-N SEMICONDUCTORS BY
LOW ENERGY ELECTRON ENHANCED ETCHING (LE4) G8.2.1 H.P. QILLIS, M.B.
CHRISTOPHER, K.P. MARTIN, AND DA. CHOUTOU NORMAL AND INVERTED AIGAN/GAN
BASED PIEZOELECTRIC FIELD EFFECT TRANSISTORS GROWN BY PLASMA INDUCED
MOLECULAR BEAM EPITAXY G8.4.1 M.J. MURPHY, B.E. FOUTZ, FT. CHU, H. WU,
W. YEO, W.J. SCHAFF, *. AMBACHER, L.F. EASTMAN, T.J. EUSTIS, R.
DIMITROV, M. STUTZMANN, AND W. RIEGER PART IX: QUANTUM DOTS AND
PROCESSING PIEZOELECTRIC PROPERTIES OF GAN SELF-ORGANIZED QUANTUM DOTS
G9.2.1 B. DAUDIN, F. WIDMANN, J. SIMON, G. FEUILLET, J.L. ROUVIERE, N.T.
PELEKANOS, AND * FISHMAN FABRICATION OF SELF-ASSEMBLING AIGAN QUANTUM
DOT ON AIGAN SURFACES USING ANTI-SURFACTANT G9.4.1 H. HIRAYAMA, Y.
AOYAGI, AND S. TANAKA SCANNING TUNNELING MICROSCOPY STUDIES OF INGAN
GROWTH BY MOLECULAR BEAM EPITAXY G9.5.1 H. CHEN, A.R. SMITH, R.M.
FEENSTRA, D.W. OREUE, AND J.E. NORTHRUP NI/SI-BASED CONTACTS TO GAN:
THERMALLY ACTIVATED STRUCTURAL TRANSFORMATIONS LEADING TO OHMIC BEHAVIOR
G9.9.1 E. KAMINSKA, A. PIOTROWSKA, J. JASINSKI, J. KOZUBOWSKI, A. BARCZ,
K. OOLASZEWSKA, D.B. THOMSON, R.F. DAVIS, AND M.D. BREMSER INVITED
PAPER PART X: NOVEL GROWTH, DOPING. AND PROCESSING IMPROVEMENT OF
CRYSTALLINE QUALITY OF GROUP III NITRIDES ON SAPPHIRE USING LOW
TEMPERATURE INTERLAYERS G10.1.1 H. AMANO, M. IWAYA, N. HAYASHI, T.
KASHIMA, M. KATSURAGAWA, T. TAKEUCHI, C. WETZEL AND I. AKASAKI *GAN
HOMOEPITAXY FOR DEVICE APPLICATIONS M. KAMP, *. KIRCHNER, V. SCHWEGLER,
A. PELZMANN, K.J. EBELING, M. LESZCZYNSKL, I. QRZEGORY, T. SUSKI, AND S.
POROWSKI DOPING OF AIGAN ALLOYS C.Q. VAN DE WALLE, *. STAMPFL, J.
NEUGEBAUER, M.D. MCCTUSKEY, AND N.M. JOHNSON ETCH PROCESSING OF LLL-V
NITRIDES C.R. EDDY, JR. DAMAGE-FREE PHOTO-ASSISTED CRYOGENIC ETCHING OF
GAN AS EVIDENCED BY REDUCTION OF YELLOW LUMINESCENCE J.T. TLSIEH, J.M.
HWANG, TL.L. HWANG, AND W.U. HUNG FOCUSED ION BEAM MICROMACHINING OF GAN
PHOTONIC DEVICES /. CHYR AND A J. STECKL PART XI: RARE-EARTH DOPING AND
OPTICAL EMISSION LUMINESCENCE FROM ERBIUM-DOPED GALLIUM NITRIDE THIN
FILMS GL 1.1.1 J.M. ZAVADA, M. THAIK, U. HOEMMERICH, J.D. MACKENZIE, C.R.
ABERNATHY, F. REN, H. SHEN, J. PAMULAPATI, H. JIANG, J. LIN, AND R.O.
WILSON RBS LATTICE SITE LOCATION AND DAMAGE RECOVERY STUDIES IN GAN
GIL.2.1 E. ALVES, M.E. DASILVA, J.C. SOARES, J. BARTELS, R. VIANDEN,
C.R. ABERNATHY, AND S.J. PEARTON VISIBLE AND INFRARED RARE-EARTH
ACTIVATED ELECTROLUMINESCENCE FROM ERBIUM DOPED GAN GL 1.3.1 M. DARTER,
R. BIRKHAHN, A J. STECKL, AND J. SCOFIELD PHOTOLUMINESCENCE AND
PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF IN SITU ER-DOPED AND
ER-LMPLANTED GAN FILMS GROWN BY HYDRIDE VAPOR PHASE EPITAXY GL 1.4.1 S.
KIM, X. LI, J J. COLEMAN, R. ZHANG, D.M. HANSEN, *.*. KUECH, AND S.G.
BISHOP OPTICAL CHARACTERIZATION OF ERBIUM DOPED ILL-NITRIDES PREPARED BY
METALORGANIC MOLECULAR BEAM EPITAXY GL 1.6.1 U. HOEMMERICH, J.T. SEO, M.
THAIK, J.D. MACKENZIE, C.R. ABERNATHY, S.J. PEARTON, R.G. WILSON, AND
J.M. ZAVADA G10.2.1 GL 0.4.1 GL 0.5.1 GL 0.6.1 GIO.7.1 OPTICAL AND
STRUCTURAL PROPERTIES OF AIGAN/GAN QUANTUM WELLS GROWN BY MOLECULAR BEAM
EPITAXY GL 1.7.1 N. ORANDJEAN, J. MASSIES, M. LEROUX, M. LAUGT, P.
LEFEBVRE, B. GIL, J. ALLEGRE, AND P. BIGENWALD DEFECT LUMINESCENCE IN
HEAVILY MG DOPED GAN GL 1.8.1 **. RESHCHIKOV, Q-C. YI, AND B.W. WESSELS
AUTHOR INDEX SUBJECT INDEX INVITED PAPER
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV012724615 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.15.G3 |
| callnumber-search | TK7871.15.G3 |
| callnumber-sort | TK 47871.15 G3 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UD 8400 |
| ctrlnum | (OCoLC)41431599 (DE-599)BVBBV012724615 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1998 Boston Mass. gnd-content |
| genre_facet | Konferenzschrift 1998 Boston Mass. |
| id | DE-604.BV012724615 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:32:35Z |
| institution | BVB |
| isbn | 1558994432 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008651207 |
| oclc_num | 41431599 |
| open_access_boolean | |
| owner | DE-703 DE-384 DE-83 |
| owner_facet | DE-703 DE-384 DE-83 |
| physical | Getr. Zählung Ill., graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | GaN and related alloys symposium held November 30 - December 4, 1998, Boston, Massachusetts, USA ed.: Stephen J. Pearton ... Warrendale, PA. Materials Research Soc. 1999 Getr. Zählung Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 537 Electroluminescent devices Materials Congresses Epitaxy Congresses Gallium nitride Congresses Laser materials Congresses Semiconductors Materials Congresses Optische Eigenschaft (DE-588)4123887-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Epitaxie (DE-588)4152545-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1998 Boston Mass. gnd-content Galliumnitrid (DE-588)4375592-6 s Halbleiter (DE-588)4022993-2 s DE-604 Epitaxie (DE-588)4152545-0 s Optische Eigenschaft (DE-588)4123887-4 s Pearton, Stephen J. Sonstige oth Materials Research Society: Materials Research Society symposia proceedings 537 (DE-604)BV001899105 537 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008651207&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | GaN and related alloys symposium held November 30 - December 4, 1998, Boston, Massachusetts, USA Materials Research Society: Materials Research Society symposia proceedings Electroluminescent devices Materials Congresses Epitaxy Congresses Gallium nitride Congresses Laser materials Congresses Semiconductors Materials Congresses Optische Eigenschaft (DE-588)4123887-4 gnd Halbleiter (DE-588)4022993-2 gnd Galliumnitrid (DE-588)4375592-6 gnd Epitaxie (DE-588)4152545-0 gnd |
| subject_GND | (DE-588)4123887-4 (DE-588)4022993-2 (DE-588)4375592-6 (DE-588)4152545-0 (DE-588)1071861417 |
| title | GaN and related alloys symposium held November 30 - December 4, 1998, Boston, Massachusetts, USA |
| title_auth | GaN and related alloys symposium held November 30 - December 4, 1998, Boston, Massachusetts, USA |
| title_exact_search | GaN and related alloys symposium held November 30 - December 4, 1998, Boston, Massachusetts, USA |
| title_full | GaN and related alloys symposium held November 30 - December 4, 1998, Boston, Massachusetts, USA ed.: Stephen J. Pearton ... |
| title_fullStr | GaN and related alloys symposium held November 30 - December 4, 1998, Boston, Massachusetts, USA ed.: Stephen J. Pearton ... |
| title_full_unstemmed | GaN and related alloys symposium held November 30 - December 4, 1998, Boston, Massachusetts, USA ed.: Stephen J. Pearton ... |
| title_short | GaN and related alloys |
| title_sort | gan and related alloys symposium held november 30 december 4 1998 boston massachusetts usa |
| title_sub | symposium held November 30 - December 4, 1998, Boston, Massachusetts, USA |
| topic | Electroluminescent devices Materials Congresses Epitaxy Congresses Gallium nitride Congresses Laser materials Congresses Semiconductors Materials Congresses Optische Eigenschaft (DE-588)4123887-4 gnd Halbleiter (DE-588)4022993-2 gnd Galliumnitrid (DE-588)4375592-6 gnd Epitaxie (DE-588)4152545-0 gnd |
| topic_facet | Electroluminescent devices Materials Congresses Epitaxy Congresses Gallium nitride Congresses Laser materials Congresses Semiconductors Materials Congresses Optische Eigenschaft Halbleiter Galliumnitrid Epitaxie Konferenzschrift 1998 Boston Mass. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008651207&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT peartonstephenj ganandrelatedalloyssymposiumheldnovember30december41998bostonmassachusettsusa |