Amorphous silicon technology 1992: symposium held April 27 - May 1, 1992, San Francisco, California, U.S.A.
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| Format: | Buch |
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| Sprache: | English |
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Pittsburgh, Pa.
Materials Research Soc.
1992
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| Schriftenreihe: | Materials Research Society: Materials Research Society symposia proceedings
258 |
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| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXV, 1198 S. Ill., graph. Darst. |
| ISBN: | 1558991530 |
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| 245 | 1 | 0 | |a Amorphous silicon technology 1992 |b symposium held April 27 - May 1, 1992, San Francisco, California, U.S.A. |c ed.: Malcolm J. Thompson ... |
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| adam_text | MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 258 AMORPHOUS
SILICON TECHNOLOGY - 1992 SYMPOSIUM HELD APRIL 27-MAY 1, 1992, SAN
FRANCISCO, CALIFORNIA, U.S.A. EDITORS: MALCOLM J. THOMPSON XEROX PARC
PALO ALTO, CALIFORNIA, U.S.A. YOSHIHIRO HAMAKAWA OSAKA UNIVERSITY OSAKA,
JAPAN PETER G. LECOMBER UNIVERSITY OF DUNDEE DUNDEE, UNITED KINGDOM ARUN
MADAN MVSYSTEMS, INC. GOLDEN, COLORADO, U.S.A. ERIC A. SCHIFF SYRACUSE
UNIVERSITY SYRACUSE, NEW YORK, U.S.A. MATERIALS RESEARCH SOCIETY
PITTSBURGH, PENNSYLVANIA CONTENTS PREFACE RETRACTION MATERIALS RESEARCH
SOCIETY SYMTOSIUM PROCEEDINGS PART I: GROWTH AND MODIFICATION OF A-SI:H
* IN SITU MONITORING OF INTERFACES AND GROWTH OF AMORPHOUS SILICON BY
SPECTROELLIPSOMETRY B. DREVILLON 3 * VHF PLASMA DEPOSITION: A
COMPARATIVE OVERVIEW A. SHAH, J. DUTTA, N. WYRSCH, K. PRASAD, H.
CURTINS, F. FINGER, A. HOWLING AND CH. HOLLENSTEIN 15 MODIFICATION OF
A-SI(:H) BY THERMALLY GENERATED ATOMIC HYDROGEN: A REAL TIME
SPECTROSCOPIC ELLIPSOMETRY STUDY OF SI BOND BREAKING I. AN, Y. LI, CR.
WRONSKI AND R.W. COLLINS 27 MACRO-TRENCH STUDIES OF SURFACE REACTION
PROBABILITY OF A-SI:H FILM GROWTH A. NURUDDIN, J.R. DOYLE AND J.R.
ABELSON 33 A DEFECT DENSITY OF - 10 14 CM 3 IN HYDROGENATED AMORPHOUS
SILICON DEPOSITED AT HIGH SUBSTRATE TEMPERATURES G. GANGULY AND A.
MATSUDA 39 PHOTODEGRADATION AND STABILITY OF A-SI PREPARED AT HIGH
DEPOSITION RATES S. VEPIFEK, O. AMBACHER AND M. VANECEK 45 COMPARISON OF
A-SI:H FILMS PREPARED BY RP- AND CONVENTIONAL P-CVD S.C. KIM, K.C. PARK,
S.K. KIM, T.G. KIM, J.S. PYUN, J.M. JUN AND J. JANG 51 OPTOELECTRONIC
PROPERTIES OF PLASMA CVD A-SI:H MODIFIED BY FILAMENT-GENERATED ATOMIC H
Y.M. LI, I. AN, M. GUNES, R.M. DAWSON, R.W. COLLINS AND CR. WRONSKI 57 *
INVITED PAPER V HIGH-BANDGAP A-SI:H DEPOSITED BY CONCENTRIC-ELECTRODE RF
GLOW DISCHARGE J.P. CONDE, F. LAU, V. CHU, K.K. CHAN, J.M. BLUM AND M.
ARIENZO 63 THE STUDY ON MICROSTRUCTURE BY NMR, FTIR, RAMAN CONDUCTIVITY
AND OPTICAL BANDGAP IN HYDROGENATED AMORPHOUS SILICON PREPARED BY NOVEL
FABRICATION METHODS K.C. HSU, H. CHANG, CS. HONG AND H.L. HWANG 69
DEPOSITION TEMPERATURE AND OPTOELECTRONIC PROPERTIES OF A-SI:H FILMS *
SWIATKOWSKI, W. HIRSCH AND M. KUNST 75 CHARACTERIZATION OF
ARSENIC-IMPLANTED AMORPHOUS SILICON L. KNOCH, N.D. THEODORE, G. TARN AND
R. PENNELL 81 HYDROGENATION OF * AND P IMPLANTED LPCVD AMORPHOUS SILICON
S.M. PIETRUSZKO 87 EFFECT OF BORON AND PHOSPHORUS ION IMPLANTATION ON
A-SI X C,. X :H THIN FILMS F. DEMICHELIS, R. GALLONI, C.F. PIRRI, R.
RIZZOLI, C. SUMMONTE AND E. TRESSO 93 LOW-RESISTIVITY AMORPHOUS SILICON
FOR CONTACTS USING LOW-TEMPERATURE RAPID THERMAL ANNEALING L. KNOCH, G.
TARN, N.D. THEODORE AND R. PENNELL 99 THE DOPING OF A-SI.H WITH LIQUID
BORON AND PHOSPHORUS SOURCES M. ALBERT, K. SCHADE AND W. BEYER 105
CRYSTALLIZATION KINETICS OF HYDROGENATED AMORPHOUS SILICON DURING PULSED
EXCIMER LASER ANNEALING S.E. READY, J.H. ROH, J.*. BOYCE AND G.B.
ANDERSON 111 PULSED LASER-INDUCED CRYSTALLIZATION AND AMORPHIZATION OF
SIGE FILMS T. SAMESHIMA AND S. USUI 117 PULSED LASER CRYSTALLIZATION OF
AMORPHOUS SILICON FILMS: EFFECTS OF SUBSTRATE TEMPERATURE AND LASER SHOT
DENSITY R.I. JOHNSON, G.B. ANDERSON, S.E. READY, D.K. FORK AND J.B.
BOYCE 123 KINETICS OF A-SI:H CRYSTALLIZATION INDUCED BY GOLD AT LOW
TEMPERATURES A.A. PASA, M.B. SCHUBERT, C.-D. ABEL, W. BEYER, W. LOSCH
AND G.H. BAUER 129 VI MICROSTRUCTURE, OPTOELECTRONIC PROPERTIES AND
SATURATED DEFECT DENSITY OF A-SI:H PREPARED IN VHF- GLOW DISCHARGE USING
AR AND XE DILUTION U. KROLL, F. FINGER, J. DUTTA, H. KEPPNER, A. SHAH,
A. HOWLING, J.-L. DORIER AND CH. HOLLENSTEIN 135 DIAGNOSTICS OF VHF
PLASMA DEPOSITION J. KUSKE, U. STEPHAN, *. SCHADE AND W. FUHS 141
ANALYSIS OF VHF GLOW DISCHARGE OF A-SI:H OVER A WIDE FREQUENCY RANGE R.
ZEDLITZ, M. HEINTZE AND G.H. BAUER 147 ENGINEERING OF PECVD SYSTEMS FOR
MACROELECTRONIC APPLICATIONS R. MARTINS, I. FERREIRA, C.N. CARVALHO, A.
MAGARICO AND L. GUIMARAEES 153 EFFECT OF ANNEALING ON UNDOPED A-SI:H
FILMS PREPARED BY MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR DEPOSITION T.
NIIYAMA AND H. NOZAKI 159 A PARTICULAR PHOTO-CVD APPARATUS FOR
HYDROGENATED AMORPHOUS SILICON DEPOSITION * MANFREDOTTI, F. FIZZOTTI, C.
OSENGA, M. BOERO, V. RIGATO AND A. QUARANTA 165 DEPENDENCE OF THE A-SI:H
DEFECT DENSITY OF STATES ON THE MAGNETIC FIELD PROFILE OF AN ELECTRON
CYCLOTRON RESONANCE MICROWAVE PLASMA F.S. POOL, J.M. ESSICK, Y.H. SHING
AND R.T. MATHER 173 GROWTH AND STRUCTURE OF MICROCRYSTALLINE SILICON BY
REACTIVE DC MAGNETRON SPUTTERING G.F. FENG, M. KATIYAR, Y.H. YANG, J.R.
ABELSON AND N. MALEY 179 EFFECTS OF HYDROGEN PLASMA TREATMENT ON
HYDROGENATED AMORPHOUS SILICON J.-K. LEE AND E.A. SCHIFF 185
MICROSTRUCTURE AND DANGLING BOND DEFECTS IN AMORPHOUS HYDROGENATED
SILICON DEPOSITED NEAR ROOM TEMPERATURE M.K. CHEUNG AND M.A. PETRICH 191
VII PART II: STRUCTURE AND DEFECTS IN A-SI:H * ROLE OF HYDROGEN
MICROSTRUCTURE IN AMORPHOUS SILICON S. ZAFAR AND E.A. SCHIFF 199
CONFIGURATIONAL RELAXATION OF THE D DEFECT IN HYDROGENATED AMORPHOUS
SILICON AS A FUNCTION OF FERMI ENERGY T.M. LEEN, R.J. RASMUSSEN AND J.D.
COHEN 211 * STRUCTURAL STUDIES OF AMORPHOUS SEMICONDUCTOR ALLOYS USING
X-RAY ABSORPTION AND RELATED TECHNIQUES F. BOSCHERINI 217 SMALL-ANGLE
X-RAY SCATTERING STUDIES OF GLOW- DISCHARGE-PRODUCED A-SIGE:H ALLOYS
S.J. JONES, Y. CHEN, D.L. WILLIAMSON AND G.D. MOONEY 229 OPTICAL
PROPERTIES AND STRUCTURE OF MICROCRYSTALLINE SILICON H.V. NGUYEN, I. AN,
Y. LI, CR. WRONSKI AND R.W. COLLINS 235 NEAR-SURFACE DENSITY OF STATES
IN A-SI:H BY PHOTOELECTRON YIELD SPECTROSCOPIES S.L. WANG, F. PATRIARCA
AND F. EVANGELISTI 241 ORIGIN OF SURFACE DEFECTS IN A-SI:H FILMS H. YAN,
A. MORIMOTO, M. KUMEDA, T. SHIMIZU AND Y. YONEZAWA 247 REALISTIC MODELS
OF HYDROGENATED AMORPHOUS SI D.A. DRABOLD AND P.A. FEDDERS 253 DETECTION
OF ATOMIC ORDER IN QUASIAMORPHOUS MATERIALS R.S. TIMSIT, W.G. WADDINGTON
AND G. GALLERNEAULT 257 DEFECT STATES AND STRUCTURAL DISORDER IN A-SI
B.N. DAVIDSON, G. LUCOVSKY AND J. BERNHOLC 263 A MULTIPLE QUANTUM NMR
(MQNMR) STUDY OF HYDROGEN MICROSTRUCTURE IN BORON DOPED A-SI:H S. MITRA,
D.H. LEVY, K.K. GLEASON, H. JIA AND J. SHINAR 269 BOND-ANGLE VARIATION
AND MICROSTRUCTURE IN HYDROGENATED AMORPHOUS SILICON A.J.M. BERNTSEN,
M.J. VAN DEN BOOGAARD, W.G.J.H.M. VAN SARK AND W.F. VAN DER WEG 275 *
INVITED PAPER SMALL ANGLE X-RAY SCATTERING (SAXS) AND IR STUDY OF
MICROVOID DYNAMICS IN ANNEALED RF SPUTTER- DEPOSITED A-SI:H H. JIA, J.
SHINAR, Y. CHEN AND D.L. WILLIAMSON 281 CONTRIBUTIONS TO
SILICON-HYDROGEN BOND-STRETCHING FREQUENCY IN AMORPHOUS SI ALLOYS Z.
JING, J.L. WHITTEN AND G. LUCOVSKY 287 DIPOLAR MEASUREMENTS OF HYDROGEN
IN AMORPHOUS SILICON P. HARI, P.C. TAYLOR AND R.A. STREET 293 SURFACE
AND BULK GAP STATES DISTRIBUTIONS IN AMORPHOUS SILICON FILMS AS OBTAINED
BY OPTICAL METHODS G. AMATO, G. BENEDETTO, L. BOARINO, F. GIORGIS AND R.
SPAGNOLO 299 AB INITIO CALCULATIONS FOR DEFECTS IN SILICON-BASED
AMORPHOUS SEMICONDUCTORS N. ISHII AND T. SHIMIZU 305 SMALL-ANGLE X-RAY
SCATTERING FROM A-SI:H AND A-SIC:H ALLOYS PREPARED BY REACTIVE DC
MAGNETRON SPUTTERING Y. CHEN, S.J. JONES, D.L. WILLIAMSON, S. YANG, N.
MALEY AND J.R. ABELSON 311 PART III: STABILITY IN A-SI:H EVIDENCE FOR
HYDROGEN-HYDROGEN INTERACTIONS DURING DIFFUSION IN A-SI:H W.B. JACKSON,
C.C. TSAI AND P.V. SANTOS 319 * DEFECT EQUILIBRATION AND STABILIZATION
IN TWO TYPES OF LOW-SPIN-DENSITY A-SI:H T.J. MCMAHON 325 THE ATOMISTIC
AND QUANTUM MECHANICAL ORIGINS OF LIGHT-INDUCED DEFECTS IN A-SI P.A.
FEDDERS, Y. FU AND D.A. DRABOLD 335 INTERPRETATION OF
STRETCHED-EXPONENTIAL DEFECT KINETICS IN A-SI:H D. REDFIELD 341
CORRELATIONS OF CHANGES IN ESR AND PL WITH LIGHT SOAKING IN A-SI:H M.
YOSHIDA AND P.C. TAYLOR 347 * INVITED PAPER IX ENHANCED HYDROGEN
DIFFUSION UNDER ILLUMINATION IN HYDROGENATED AMORPHOUS SILICON P.V.
SANTOS, N.M. JOHNSON AND R.A. STREET 353 POTENTIAL ROLE FOR CHARGED
DANGLING BONDS IN TRANSIENT-LESR OF LIGHT-SOAKED A-SI:H Z.M. SALEH, H.
TARUI, S. TSUDA, S. NAKANO AND Y. KUWANO 359 THE MECHANISM FOR DEFECT
GENERATION STUDIED BY PHOTODEGRADATION OF A-SI:H SOLAR CELLS UNDER
ELECTRICAL BIAS L. YANG, L. CHEN, J.Y. HOU AND Y.M. LI 365 LIGHT-INDUCED
EFFECTS IN A-SI:H FILMS FABRICATED BY INTENSE LIGHT-FLASH ASSISTED
PLASMA CVD, AND ITS APPLICATION TO THE STABILIZATION OF A-SI:H SOLAR
CELLS W.A. NEVIN, H. YAMAGISHI, T. FUJIHARA, A. TAKENAKA, M. YAMAGUCHI
AND Y. TAWADA 371 DEUTERON MAGNETIC RESONANCE STUDIES OF STRUCTURE AND
PHOTO-INDUCED METASTABLE REARRANGEMENTS IN DEUTERATED AMORPHOUS SI, GE
AND SIGE FILMS R.E. NORBERG, J. BODART, R. COREY, P.A. FEDDERS, W. PAUL,
W.A. TURNER, D. PANG AND A. WETSEL 377 CHARGE-DEFECT THERMODYNAMIC
EQUILIBRIUM AND METASTABLE DEFECTS IN AMORPHOUS SILICON CM. FORTMANN AND
J.D. COHEN 383 OBSERVATION OF METASTABILITY IN AMORPHOUS SILICON
CONTAINING 0.1 AT. % HYDROGEN H.M. BRANZ AND E. IWANICZKO 389 KINETICS
OF DOPANT METASTABILITY IN A-SI:H C.E. NEBEL, R.A. STREET, N.M. JOHNSON
AND W.B. JACKSON 395 STUDY OF SHORT-RANGE MOTION OF ATOMIC HYDROGEN IN
AMORPHOUS SILICON BY NEUTRON REFLECTOMETRY W.D. DOZIER, K.W. HERWIG, R.
SHINAR, H. JIA AND J. SHINAR 401 THE INFLUENCE OF THE VOID STRUCTURE ON
DEUTERIUM DIFFUSION IN A-SI:H M.J. VAN DEN BOOGAARD, S.J. JONES, Y.
CHEN, D.L. WILLIAMSON, R.A. HAKVOORT, A. VAN VEEN, A.C. VAN DER STEEGE,
W.M.A. BIK, W.G.J.H.M. VAN SARK AND W.F. VAN DER WEG 407 ANNEALING OF
METASTABLE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON J.-H.
YOON AND Y.-Z. LEE 413 ANOMALOUS DIFFUSION OF HYDROGEN AND THE
DEPENDENCE OF THE DIFFUSION CONSTANTS ON HYDROGEN CONTENT IN
HYDROGENATED AMORPHOUS SILICON R. SHINAR, H. JIA, X.-L. WU AND J. SHINAR
419 X CONCENTRATION-DEPENDENT HYDROGEN DIFFUSIVITY IN A-SI:H P.V. SANTOS
AND W.B. JACKSON 425 NEW RESULTS ON ENHANCED DEUTERIUM DIFFUSION UNDER
ILLUMINATION IN AMORPHOUS SILICON H.M. BRANZ, S.E. ASHER AND B.P. NELSON
431 LITHIUM STABILITY AND DIFFUSION IN A-SI:H W. BEYER, J. HERION, H.
WAGNER AND U. ZASTROW 437 COMPARISON OF ELECTRON BEAM-INDUCED AND LIGHT-
INDUCED DEFECT SATURATION IN A-SI:H M. GRIMBERGEN, A. LOPEZ-OTERO, A.
FAHRENBRUCH, L. BENATAR, D. REDFIELD, R. BUBE AND R. MCCONVILLE 443 THE
ROLE OF CHARGED DEFECTS IN PHOTO-DEGRADATION OF HYDROGENATED AMORPHOUS
SILICON V.L. DALAI, S. CHOPRA AND R. KNOX 449 RELATION BETWEEN DEFECT
DENSITY AND CONDUCTIVITY CHANGES WITH LIGHT-SOAKING AND ANNEALING IN
A-SI:H T. SHIMIZU, M. IWAMI, T. OKAGAWA, A. MORIMOTO AND M. KUMEDA 455
ISOLATION OF TEMPERATURE EFFECTS ON THE KINETICS OF LIGHT INDUCED DEFECT
GENERATION IN A-SI:H L. BENATAR, M. GRIMBERGEN, A. FAHRENBRUCH, A.
LOPEZ-OTERO, D. REDFIELD AND R. BUBE 461 EFFECT OF PHOTODEGRADATION ON
TRANSIENT AND STEADY STATE FORWARD BIAS CHARACTERISTICS OF A A-SI:H
P-I-N DIODE R. AMOKRANE, R. VANDERHAGHEN AND M. SILVER 467 KINETICS OF
GROWTH AND RECOVERY OF LIGHT-INDUCED DEFECTS UNDER HIGH-INTENSITY
ILLUMINATION M. ISOMURA AND S. WAGNER 473 CURRENT INDUCED DEGRADATION OF
A-SI:H PIN AND SCHOTTKY SWITCHES K.J.B.M. NIEUWESTEEG, J. BOOGAARD AND
G. OVERSLUIZEN 479 MULTI-CYCLING OF STAEBLER-WRONSKI EFFECT K. GUANGLING
AND S. GUOSHENG 485 TOWARD THE ELIMINATION OF LIGHT-INDUCED DEGRADATION
OF AMORPHOUS SI BY FLUORINE INCORPORATION X. DENG, E. MYTILINEOU, R.T.
YOUNG AND S.R. OVSHINSKY 491 XI PART IV: GERMANIUM, CARBON, NITROGEN
ALLOYS AND MULTILAYER S EFFECT OF LIGHT-SOAKING ON THE DENSITY OF STATES
AND CARRIER DYNAMICS OF A-SI 10C GE X :H ALLOYS T. UNOLD, J.D. COHEN AND
CM. FORTMANN 499 DEFECT KINETICS AND SATURATION IN AMORPHOUS
SILICON-GERMANIUM ALLOYS G. SCHUMM, C.-D. ABEL AND G.H. BAUER 505
STRUCTURE AND CARRIER-TRANSTORT IN A-SI:H, A-SI(GE):H FILMS PREPARED BY
CHEMICAL ANNEALING H. SHIRAI, K. NAKAMURA, M. AZUMA, J. HANNA AND I.
SHIMIZU 511 THE VIBRATIONAL SPECTRUM OF A-SIC:H FILMS IN THE 500 CM _1
TO 9000 CM 1 RANGE BY FTIR TRANSMISSION AND PHOTOTHERMAL DEFLECTION
SPECTROSCOPY E. LOTTER AND G.H. BAUER 517 THE FARTHEST REACHES OF
A-SI,GE:H,F PARAMETER SPACE... WHERE NO ONE HAS GONE BEFORE P.A. MORIN,
N.W. WANG AND S. WAGNER 523 TIME-OF-FLIGHT MEASUREMENT ON A-GE:H AND
A-SIGE:H ALLOYS E.Z. LIU, D. PANG, W. PAUL AND J.H. CHEN 529 AMORPHOUS
GE/SI MULTILAYER STRUCTURES AS MODELS FOR OPTICAL MEMORIES K.
JAERRENDAHL, R. JANSSON, J.-E. SUNDGREN AND H. ARWIN 535 SUBGAP
ABSORPTION AND ELECTRICAL PROPERTIES OF COMPOSITIONAL MULTILAYERS OF
A-SI:H AND ALLOYS N. BERNHARD AND G.H. BAUER 541 EFFECTS OF GAS DILUTION
ON THE GROWTH AND PROPERTIES OF GLOW DISCHARGE A-GE:H J.H. CHEN, P.
WICKBOLDT, D. PANG, A.E. WETSEL AND W. PAUL 547 NON-EQUILIBRIUM CARRIER
DYNAMICS IN A-SI:H/A-SIC:H MULTILAYERS M. PETRAUSKAS, J. KOLENDA, A.
GALECKAS, R. SCHWARZ, F. WANG, *. MUSCHIK, *. FISCHER AND H. WEINERT 553
ANOMALOUS CARBON INTERDIFFUSION IN A-SI:H/A-SIC:H MULTILAYERS R.
SCHWARZ, *. FISCHER, P. HANESCH, J. LANZ, W. SCHIRMACHER, J. KOLODZEY,
G. ZORN AND H. GOEBEL 559 RECOMBINATION LIFETIMES IN A-SI:H/A-SI:H
MULTILAYERS T. MUSCHIK, T. FISCHER AND R. SCHWARZ 565 XII GROWTH OF
GE/SI AMORPHOUS SUPERLATTICES BY DUAL-TARGET DC MAGNETRON SPUTTERING K.
JAERRENDAHL, J. BIRCH, L. HULTMAN, L.R. WALLENBERG, G. RADNOCZI, H. ARWIN
AND J-E. SUNDGREN 571 OPTIMIZATION OF THE DEPOSITION CONDITIONS FOR
HIGH-GAP A-SI,GE:H,F ALLOYS P.A. MORIN, N.W. WANG AND S. WAGNER 577
ENERGY DIFFERENCES BETWEEN THE SI AND THE GE DANGLING BOND DEFECTS IN
A-SII_ X GE X ALLOYS S.M. CHO, B.N. DAVIDSON AND G. LUCOVSKY 583 DEFECT
SATURATION IN A-SIGE:H(F) ALLOYS N.W. WANG, P.A. MORIN, V. CHU AND S.
WAGNER 589 OPTICAL PROPERTIES OF HYDROGENATED AMORPHOUS SILICON,
SILICON-GERMANIUM AND SILICON-CARBON THIN FILMS R.M. DAWSON, Y.M. LI, M.
GUNES, D. HELLER, S. NAG, R.W. COLLINS, CR. WRONSKI, M. BENNETT AND
Y.-M. LI 595 METASTABILITY OF LIGHT-INDUCED DEFECTS IN VERY LOW DENSITY
OF GAP STATES A-SI BX C X :H ALLOYS M. SEBASTIANI, P. FIORINI, F.
ALVAREZ, F. POZZILLI, O. PULCI AND F. EVANGELISTI 601 INFLUENCE OF
CARBON ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF
MICROCRYSTALLINE SILICON CARBIDE F. DEMICHELIS, C.F. PIRRI, E. TRESSO,
G. DELLAMEA, A. QUARANTA, V. RIGATO, M. FERRARIS AND P. RAVA 607
IMPROVED PROPERTIES OF A-SIC:H ALLOYS WITH REDUCED DENSITY OF CH 3
RADICALS S.S. CAMARGO JR., M.L. DE OLIVEIRA, A.A. PASA AND C. GATTS 613
A NEW METHOD OF DEPOSITING AMORPHOUS HYDROGENATED SILICON CARBIDE WITH
LOW IR-DETECTED MICROSTRUCTURE H.Y. LU AND M.A. PETRICH 619
OPTOELECTRONIC PROPERTIES OF A-SIC:H STUDIED BY TIME-RESOLVED MICROWAVE
PHOTOCONDUCTIVITY AND PHOTOINDUCED ABSORPTION MEASUREMENTS *
SWIATKOWSKI, D. HERRN, W. HIRSCH AND M. KUNST 625 COMPARISON OF A-SI BX
C X :H LAYERS BASED ON METHANE, DI-, TRI- AND TETRASILYLMETHANE AS
FEEDSTOCKS J. FOELSCH, H. RUBEL AND H. SCHADE 631 OPTOELECTRONIC
PROPERTIES OF AMORPHOUS SIGEC ALLOYS J. KOLODZEY, R. SCHWARZ, F. WANG,
*. MUSCHIK, J. KRAJEWSKI, R. SHEKHAR, M. BARTEAU, R. PLAETTNER AND E.
GUENZEL 637 XIII COMPARATIVE STUDY OF THE OPTICAL AND VIBRATIONAL
PROPERTIES OF A-SIN X :H FILMS PREPARED FROM SIH 4 -N 2 AND SIH 4 -NH 3
GAS MIXTURES BY RF PLASMA J. CAMPMANY, E. BERTRAN, J.L. ANDUJAR, A.
CANILLAS, J.M. LOPEZ-VILLEGAS AND J.R. MORANTE 643 INVESTIGATION OF
HYDROGEN AND NITROGEN THERMAL STABILITY IN PECVD A-SIN X :H M. FITZNER,
J.R. ABELSON AND J. KANICKI 649 PERCOLATION BEHAVIOUR IN THE ELECTRICAL
CHARACTERISTICS OF HYDROGENATED AMORPHOUS SILICON NITRIDE FILMS J.M.
LOPEZ-VILLEGAS, B. GARRIDO, M.S. BENRAKKAD, J. SAMITIER, E. BERTRAN, A.
CANILLAS AND J.R. MORANTE 655 PHOTOLUMINESCENCE IN NITROGEN-RICH A-SIN X
:H D. CHEN, J.M. VINER, P.C. TAYLOR AND J. KANICKI 661 A THERMALLY
STABLE SILICON RICH AMORPHOUS SILICON NITRIDE ALLOY FOR ELECTRONIC
DEVICE APPLICATIONS J.B. BERNSTEIN, E.F. GLEASON AND P.W. WYATT 667
STRUCTURAL PROPERTIES OF HIGH ELECTRONIC QUALITY A-SI BX C X :H BY
INFRARED SPECTROSCOPY K. EBERHARDT, E. LOTTER, M. HEINTZE, H.-D. MOHRING
AND G.H. BAUER 673 PART V: TRANSPORT AND RECOMBINATION IN A-SI:H * THE
IMPACT OF A LONG-RANGED RANDOM POTENTIAL ON THE TRANSPORT PROPERTIES OF
AMORPHOUS SEMICONDUCTORS H. OVERHOF 681 * THE PHOTOCARRIER GRATING AND
ITS APPLICATION IN THE STUDY OF A-SI:H MATERIALS AND DEVICES I. BALBERG
693 SIMULATION OF THE STEADY-STATE PHOTOCARRIER GRATING METHOD APPLIED
TO AMORPHOUS MATERIALS C.-D. ABEL AND G.H. BAUER 705 THE EXTENDED STATE
MOBILITY IN AMORPHOUS SILICON ALLOYS P.M. FAUCHET, R. VANDERHAGHEN, A.
MOURCHID AND D. HULIN 711 * REVIEW OF THE SIMULATION OF TRANSIENT
EXPERIMENTS ON AMORPHOUS SILICON HYDRIDE F.R. SHAPIRO 717 INVITED PAPER
XIV SIMULATION OF STEADY STATE AND TRANSIENT PHENOMENA IN A-SI:H PIN
STRUCTURES AND FILMS R. BRUEGGEMANN, *. MAIN AND G.H BAUER 729
PHOTOMIXING DETERMINATION OF MOBILITY AND LIFETIME IN INTRINSIC A-SI:H
Y. TANG, R. BRAUNSTEIN AND B. VON ROEDERN 735 NON-GAUSSIAN 1/F NOISE AND
CONDUCTANCE FLUCTUATIONS IN HYDROGENATED AMORPHOUS SILICON C.E. PARMAN,
N.E. ISRAELOFF AND J. KAKALIOS 741 EXPERIMENTAL DETERMINATION OF THE
DARK FERMI LEVEL IN HYDROGENATED AMORPHOUS SILICON R.M. DAWSON, S. NAG,
M. GUNES, CR. WRONSKI, M. BENNETT AND Y.M. LI 747 TRANSIENT VERSUS
STEADY STATE MEASUREMENTS ON THE TRANSPORT PROPERTIES OF A-SI:H FILMS M.
VIEIRA, R. MARTINS, E. FORTUNATO, F. SOARES AND L. GUIMARAEES 753
QUASI-FERMI ENERGY AND STEADY-STATE RECOMBINATION DEMARCATION LEVEL IN
A-SI:H J.Z. LIU 759 MOBILITY-LIFETIME PRODUCTS IN A-SI:H AND THE
DANGLING BOND RECOMBINATION MODEL E. MORGADO 765 SUBBAND RECOMBINATION
IN A-SI:H S.Q. GU AND P.C. TAYLOR 771 ASSESSMENT OF FREE ELECTRON TO
FREE HOLE RATIOS IN A-SI:H BY AMBIPOLAR DIFFUSION AND PHOTOCONDUCTIVITY
MEASUREMENTS P. PIPOZ, E. SAUVAIN, J. HUBIN AND A. SHAH 777 DELAYED
FIELD TRANSIENT PHOTOCURRENT MEASUREMENTS IN A-SI:H H. ANTONIADIS AND
E.A. SCHIFF 783 THE SPECTRAL DEPENDENCE OF THE NON-RADIATIVE EFFICIENCY
IN HYDROGENATED AMORPHOUS SILICON J. FAN AND J. KAKALIOS 789 OPTICAL
ABSORPTION SPECTRA UNDER DC LIGHT BIAS IN UNDOPED A-SI:H J.Z. LIU, J.P.
CONDE, G. LEWEN AND P. ROCA I CABARROCAS 795 LOSS PEAKS IN THE AC
CONDUCTIVITY OF A-SI:H L. SCHIRONE, YA. YU. GUSEINOV, G. DE CESARE, A.
FERRARI AND F.P. CALIFANO 801 XV FREE CARRIER LIFETIME IN A-SI,GE:H
ALLOYS D.A. YOUNG, P.M. FAUCHET, Y.M. LIU, W.L. NIGHAN JR. AND CM.
FORTMANN 807 AN ASSESSMENT OF THE LIGHT MODULATED PHOTOCURRENT METHOD IN
THE STUDY OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS SILICON
F. ZHONG AND J.D. COHEN 813 TUNNELING SPECTROSCOPY OF AMORPHOUS
SEMICONDUCTORS J. WEN AND J. KAKALIOS 819 ELECTRON AND HOLE TRANSPORT IN
A-SI:H AT HIGH FIELD AND LOW TEMPERATURE C.E. NEBEL AND R.A. STREET 825
TRANSIENT FORWARD BIAS RESPONSE OF AMORPHOUS SILICON PIN DIODES R.A.
STREET AND M. HACK 831 REVERSE RECOVERY AND DECAY OF STORED EXCESS
CARRIERS IN A-SI:H P-I-N DIODE D. HAN, K. WANG AND M. SILVER 837 PART
VI: SOLAR CELLS * TOWARD 20% EFFICIENCY WITH A-SI // POLY-SI TANDEM
SOLAR CELL M. YOSHIMI, W. MA, T. HORIUCHI, C.C. LIM, S.C. DE, *.
HATTORI, H. OKAMOTO AND Y. HAMAKAWA 845 * A MORE THAN 18% EFFICIENCY HIT
STRUCTURE A-SI/C-SI SOLAR CELL USING ARTIFICIALLY CONSTRUCTED JUNCTION
(ACJ) Y. KUWANO, S. NAKANO, M. TANAKA, T. TAKAHAMA, T. MATSUYAMA, M.
ISOMURA, N. NAKAMURA, H. HAKU, M. NISHIKUNI, H. NISHIWAKI AND S. TSUDA
857 IMPROVEMENT IN WIDE-GAP A-SI:H FOR HIGH-EFFICIENCY SOLAR CELLS S.
TSUGE, Y. HISHIKAWA, S. OKAMOTO, M. SASAKI, S. TSUDA, S. NAKANO AND Y.
KUWANO 869 HIGH QUALITY A-SIO:H FILMS AND THEIR APPLICATION TO A-SI
SOLAR CELLS S. FUJIKAKE, H. OHTA, A. ASANO, Y. ICHIKAWA AND H. SAKAI 875
ELECTRON TRANSPORT IN A-SI^GE^H SOLAR CELLS Q. WANG, H. ANTONIADIS, E.A.
SCHIFF AND S. GUHA 881 INVITED PAPER XVI EFFECTS OF LOW LEVEL GRADED
I-LAYER DOPING ON THE STABILITY OF A-SI:H SOLAR CELLS D. FISCHER, N.
PELLATON, H. KEPPNER, A. SHAH AND CM. FORTMANN 887 ROOM TEMPERATURE
RECOVERY OF LIGHT INDUCED DEGRADATION IN A-SI:H SOLAR CELLS D. FISCHER,
N. PELLATON, H. KEPPNER, A. SHAH AND CM. FORTMANN 893 KINETICS OF
LIGHT-INDUCED DEGRADATION OF A-SI:H SOLAR CELLS COMPARED TO I-LAYER
FILMS X.R. LI, S. WAGNER, M. BENNETT AND S. FONASH 899 EFFECT OF PLASMA
TREATMENT OF THE TCO ON A-SI SOLAR CELL PERFORMANCE F. DEMICHELIS, R.
GALLONI, A. MADAN, C.F. PIRRI, P. RAVA, M. RUTH, R.E.I. SCHROPP, *
SUMMONTE AND E. TRESSO 905 CHARACTERIZATION OF THE SN0 2 /A-SIC:H
INTERFACE IN AMORPHOUS SILICON SOLAR CELL BY C-F-T MEASUREMENTS D.
CAPUTO, G. DE CESARE, F. IRRERA, F. PALMA, S. SALVATORI AND R.
VINCENZONI 911 EXPERIMENTAL CHARACTERIZATION AND OPTICAL MODELING OF
ABSORPTION AND LIGHT TRAPPING IN A-SI:H SOLAR CELLS ON TEXTURED TCO F.
LEBLANC, J. PERRIN, E. CORN» AND J. SCHMITT 917 FILM AND SOLAR CELL
PROPERTIES OF A-SICH ALLOYS Y.-M. LI, A. CATALANO AND B.F. FIESELMANN
923 QUANTUM EFFICIENCY OF TEXTURED A-SI:H P-I-N SOLAR CELLS AFTER HIGH
INTENSITY LIGHT-SOAKING X.R. LI, S. WAGNER, M. BENNETT AND S.J. FONASH
929 EVALUATION OF THE DICE METHOD AS A TOOL FOR AMORPHOUS SILICON SOLAR
CELL OPTIMIZATION M.B. VON DER LINDEN, R.E.I. SCHROPP, J.G.F. STAMMEIJER
AND W.F. VAN DER WEG 935 FILM MORPHOLOGY, EXCESS SHUNT CURRENT AND
STABILITY IN TRIPLE-JUNCTION CELLS T.J. MCMAHON AND M.S. BENNETT 941
PART VII: THIN FILM TRANSISTORS AND CONTACTS TRANSIENT LEAKAGE CURRENTS
IN AMORPHOUS SILICON THIN-FILM TRANSISTORS M. HACK, H. STEEMERS AND R.
WEISFIELD 949 MOBILITY IMPROVEMENT MECHANISM IN A-SI:H TFTS WITH SMOOTH
A-SI:H/SIN X INTERFACE K. TAKECHI, H. UCHIDA AND S. KANEKO 955 XVII KINK
EFFECT IN SHORT CHANNEL A-SI:H THIN-FILM TRANSISTORS G. FORTUNATO, L.
MARIUCCI, A. MATTACCHINI AND A. PECORA 961 EFFECTS OF ULTRAVIOLET
RADIATION ON THE CHARACTERISTICS OF HYDROGENATED AMORPHOUS SILICON THIN
FILM TRANSISTORS S.K. LEE, J.S. PARK, Y.S. KIM, J.R. HWANG, C.H. OH AND
M.K. HAN 967 EFFECT OF INTERFACE AND SURFACE ON THE PERFORMANCE OF
A-SI:H TFTS J. JANG, M.Y. JUNG, S.S. YOO, H.K. SONG AND J.M. JUN 973
WORK FUNCTION DIFFERENCE BETWEEN N-TYPE M C-SI GATE ELECTRODES DEPOSITED
BY REMOTE PECVD AND P-TYPE C-SI SUBSTRATES IN MOS CAPACITORS D.R. LEE
AND G. LUCOVSKY 979 AN INVESTIGATION OF A-SI:H THIN FILM TRANSISTORS BY
A COMPARISON OF TRANSIENT MEASUREMENTS AND NUMERICAL SIMULATIONS M.F.
WILLUMS, M. HACK, P.G. LECOMBER AND J. SHAW 985 A NEW MODEL FOR SERIES
RESISTANCE OF AMORPHOUS SILICON THIN FILM TRANSISTOR Y.S. KIM, J.S.
PARK, S.K. LEE, J.R. HWANG, H.S. CHOI, Y.I. CHOI AND M.K. HAN 991 A NEW
NARROW WIDTH EFFECT IN AMORPHOUS SILICON THIN FILM TRANSISTORS R.A.
MARTIN 997 AN INVESTIGATION OF THE BEHAVIOUR OF A-SI:H THIN FILM
TRANSISTORS FABRICATED WITH DIFFERENT PROXIMITY RECOVERY LAYER DOPING
LEVELS M.F. WILLUMS, P.G. LECOMBER AND M. HACK 1001 AMORPHOUS SILICON
THIN FILM TRANSISTORS WITH HIGH ELECTRON FIELD EFFECT MOBILITY J.L.
ANDUEJAR, E. BERTRAN, A. CANILLAS, J. CAMPMANY AND J. CIFRE 1007 STUDIES
OF THE STABILITY OF AMORPHOUS SILICON THIN FILM TRANSISTORS T. GLOBUS,
M. SHUR AND M. HACK 1013 INSTABILITY IN A-SI:H THIN-FILM TRANSISTOR: A
NEW METHOD TO DISCRIMINATE BETWEEN CHARGE INJECTION AND DEFECT CREATION
P. FOGLIETTI, G. FORTUNATO, L. MARIUCCI AND V. PARISI 1019 THE EFFECT OF
CONTACT OVERLAP DISTANCE ON A-SI TFT PERFORMANCE S. UCHIKOGA, M.
AKIYAMA, T. KOIZUMI, M. IKEDA AND K. SUZUKI 1025 XVIII ELECTRON
TRANSPORT MECHANISMS IN NICKEL SCHOTTKY BARRIER CONTACTS TO HYDROGENATED
AMORPHOUS SILICON D.E. HELLER, M. GUNES, F. RUBINELLI, R.M. DAWSON, S.
NAG, S.J. FONASH AND CR. WRONSKI 1031 HYDROGENATED AMORPHOUS
SILICON/ALUMINUM INTERACTION AT LOW TEMPERATURES M.S. HAQUE, H.A.
NASEEM, W.D. BROWN AND S.S. ANG 1037 PART VIII: RADIATION DETECTORS,
IMAGE SENSORS AND NOVEL DEVICES * HIGH ELECTRIC FIELD AMORPHOUS SILICON
STRUCTURES: APPLICATION TO PARTICLE DETECTION *. EQUER AND J.*. CHEVRIER
1045 X-RAY DETECTORS BASED ON THICK A-SI:H LAYERS DEPOSITED BY THE
VHF-GD PROCESS P. CHABLOZ, H. KEPPNER, V. BAERTSCHI, A. SHAH, D.
CHATELLARD, J.-P. EGGER, M. DENOREAZ, E. JEANNET, J.-F. GERMOND AND R.
VUILLEUMIER 1057 IMPROVEMENT OF THICK A-SI RADIATION DETECTORS BY FIELD
PROFILE TAILORING J.S. DREWERY, G. CHO, T. JING, S.N. KAPLAN, A.
MIRESHGHI, V. PEREZ-MENDEZ AND D. WILDERMUTH 1063 FACTORS AFFECTING
IMAGE QUALITY FOR MEGA VOLTAGE AND DIAGNOSTIC X-RAY A-SI:H IMAGING
ARRAYS L.E. ANTONUK, J. YORKSTON, W. HUANG, J. BOUDRY, E.J. MORTON, M.J.
LONGO AND R.A. STREET 1069 ASPECTS OF NON-VOLATILITY IN A-SI:H MEMORY
DEVICES M.J. ROSE, A.J. SNELL, P.G. LECOMBER, J. HAJTO, A.G. FITZGERALD
AND A.E. OWEN 1075 APPLICATION OF ANALOGUE AMORPHOUS SILICON MEMORY
DEVICES TO RESISTIVE SYNAPSES FOR NEURAL NETWORKS A.A. REEDER, LP.
THOMAS, * SMITH, J. WITTGREFFE, D.J. GODFREY, J. HAJTO, A.E. OWEN, A.J.
SNELL, A.F. MURRAY, M.J. ROSE, I.S. OSBORNE AND P.G. LECOMBER 1081
DYNAMIC THRESHOLDING WITH THE THREE-TERMINAL OPTICALLY ADDRESSED SPATIAL
LIGHT MODULATOR R.A. RICE, P.J. CLOSE AND G. MODDEL 1087 OPTIMIZATION OF
STORAGE SPATIAL LIGHT MODULATORS INCORPORATING AMORPHOUS SILICON AS
PHOTOCONDUCTOR D. SLOBODIN, D. SUGIARTO, M. BONE AND F. KAHN 1093 *
INVITED PAPER XIX STUDY OF A-SI:H/,TC-SI:H HETEROJUNCTION AS PHOTOSENSOR
FOR LARGE SCREEN PROJECTION DISPLAY W. HAN, G. HAN, J. QIAO, P. DU, D.
ZHAO AND Z. DING 1099 * HIGH PERFORMANCE INPUT SCANNING ARRAYS USING
AMORPHOUS SILICON PHOTODIODES AND THIN-FILM TRANSISTORS R.L. WEISFRELD
1105 * A HIGH SPEED CONTACT-TYPE IMAGE SENSOR USING AMORPHOUS SILICON
ALLOY PIN DIODES K. KITAMURA, H. MIMURA, K. TSUKADA, T. NAKAYAMA, M.
YAMAGUCHI AND Y. TAWADA 1115 * AMORPHOUS SILICON IMAGE SENSOR ARRAYS
M.J. POWELL, I.D. FRENCH, J.R. HUGHES, N.C. BIRD, O.S. DAVIES, * GLASSE
AND J.E. CURRAN 1127 THIN FILM ON ASIC - A NOVEL CONCEPT FOR INTELLIGENT
IMAGE SENSORS H. FISCHER, J. SCHULTE, J. GIEHL, M. BOEHM AND J.P.M.
SCHMITT 1139 LARGE AREA 2-DIMENSIONAL A-SI:H IMAGING ARRAYS R.A. STREET,
I. FUJIEDA, R. WEISFIELD, S. NELSON AND P. NYLEN 1145 DEPENDENCE OF 1.00
MEV PROTON RADIATION RESISTANCE OF A-SI:H ALLOY SOLAR CELLS ON CELL
THICKNESS J.R. WOODYARD 1151 ELECTRON RANGE AND ELECTRON-GENERATION
FUNCTION IN A-SI:H S. NAJAR, B. EQUER AND J-B. CHIVRIER 1157 COMPARISON
OF COMPUTER SIMULATIONS WITH MEASUREMENTS FROM A-SI:H IMAGING ARRAYS J.
YORKSTON, L.E. ANTONUK, N. SERAJI, J. BOUDRY, W. HUANG, E.J. MORTON AND
R.A. STREET 1163 THE ROLE OF THE A-SI:H LAYER IN METAL /A-SI:H/ METAL
MEMORY STRUCTURES I.S. OSBORNE, J. HAJTO, M.J. ROSE, A.J. SNELL, P.G.
LECOMBER AND A.E.OWEN 1169 INVESTIGATION OF OPTIMAL PHOTOSENSOR IN
A-SI:H LIQUID CRYSTAL LIGHT VALVES P. DU, G. HAN, J. QIAO, W. HAN, D.
ZHAO AND Z. DING 1175 CHARGE-SENSITIVE POLY-SILICON TFT AMPLIFIERS FOR
A-SI:H PIXEL PARTICLE DETECTORS G. CHO, V. PEREZ-MENDEZ, M. HACK AND A.
LEWIS 1181 * INVITED PAPER XX AUTHOR INDEX 1187 SUBJECT INDEX 1193 XXI
|
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| genre_facet | Konferenzschrift 1992 San Francisco Calif. |
| id | DE-604.BV012713339 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:32:22Z |
| institution | BVB |
| isbn | 1558991530 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008642286 |
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| physical | XXV, 1198 S. Ill., graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | Amorphous silicon technology 1992 symposium held April 27 - May 1, 1992, San Francisco, California, U.S.A. ed.: Malcolm J. Thompson ... Pittsburgh, Pa. Materials Research Soc. 1992 XXV, 1198 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 258 Silicium (DE-588)4077445-4 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Amorpher Zustand (DE-588)4306087-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1992 San Francisco Calif. gnd-content Silicium (DE-588)4077445-4 s Amorpher Zustand (DE-588)4306087-0 s Halbleitertechnologie (DE-588)4158814-9 s DE-604 Thompson, Malcolm J. Sonstige oth Materials Research Society: Materials Research Society symposia proceedings 258 (DE-604)BV001899105 258 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008642286&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Amorphous silicon technology 1992 symposium held April 27 - May 1, 1992, San Francisco, California, U.S.A. Materials Research Society: Materials Research Society symposia proceedings Silicium (DE-588)4077445-4 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Amorpher Zustand (DE-588)4306087-0 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4158814-9 (DE-588)4306087-0 (DE-588)1071861417 |
| title | Amorphous silicon technology 1992 symposium held April 27 - May 1, 1992, San Francisco, California, U.S.A. |
| title_auth | Amorphous silicon technology 1992 symposium held April 27 - May 1, 1992, San Francisco, California, U.S.A. |
| title_exact_search | Amorphous silicon technology 1992 symposium held April 27 - May 1, 1992, San Francisco, California, U.S.A. |
| title_full | Amorphous silicon technology 1992 symposium held April 27 - May 1, 1992, San Francisco, California, U.S.A. ed.: Malcolm J. Thompson ... |
| title_fullStr | Amorphous silicon technology 1992 symposium held April 27 - May 1, 1992, San Francisco, California, U.S.A. ed.: Malcolm J. Thompson ... |
| title_full_unstemmed | Amorphous silicon technology 1992 symposium held April 27 - May 1, 1992, San Francisco, California, U.S.A. ed.: Malcolm J. Thompson ... |
| title_short | Amorphous silicon technology 1992 |
| title_sort | amorphous silicon technology 1992 symposium held april 27 may 1 1992 san francisco california u s a |
| title_sub | symposium held April 27 - May 1, 1992, San Francisco, California, U.S.A. |
| topic | Silicium (DE-588)4077445-4 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Amorpher Zustand (DE-588)4306087-0 gnd |
| topic_facet | Silicium Halbleitertechnologie Amorpher Zustand Konferenzschrift 1992 San Francisco Calif. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008642286&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT thompsonmalcolmj amorphoussilicontechnology1992symposiumheldapril27may11992sanfranciscocaliforniausa |