Technology and applications of amorphous silicon: with 20 tables
Gespeichert in:
Format: | Buch |
---|---|
Sprache: | German |
Veröffentlicht: |
Berlin [u.a.]
Springer
2000
|
Schriftenreihe: | Springer series in materials science
37 |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | XI, 417 S. graph. Darst. |
ISBN: | 3540657142 |
Internformat
MARC
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035 | |a (OCoLC)634370522 | ||
035 | |a (DE-599)BVBBV012608338 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 0 | |a ger | |
044 | |a gw |c DE | ||
049 | |a DE-703 |a DE-91 |a DE-83 |a DE-11 | ||
084 | |a UP 3160 |0 (DE-625)146378: |2 rvk | ||
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084 | |a UQ 8800 |0 (DE-625)146604: |2 rvk | ||
084 | |a ELT 072f |2 stub | ||
245 | 1 | 0 | |a Technology and applications of amorphous silicon |b with 20 tables |c Robert A. Street (ed.) |
264 | 1 | |a Berlin [u.a.] |b Springer |c 2000 | |
300 | |a XI, 417 S. |b graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a Springer series in materials science |v 37 | |
650 | 0 | 7 | |a Amorpher Zustand |0 (DE-588)4306087-0 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
689 | 0 | 1 | |a Amorpher Zustand |0 (DE-588)4306087-0 |D s |
689 | 0 | |5 DE-604 | |
700 | 1 | |a Street, Robert A. |d 1947- |e Sonstige |0 (DE-588)120965585 |4 oth | |
830 | 0 | |a Springer series in materials science |v 37 |w (DE-604)BV000683335 |9 37 | |
856 | 4 | 2 | |m SWB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008563547&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
999 | |a oai:aleph.bib-bvb.de:BVB01-008563547 |
Datensatz im Suchindex
_version_ | 1804127260949610496 |
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adam_text | CONTENTS 1 INTRODUCTION :::::::::::::::::::::::::::::::::::::::::::::: 1
ROBERT STREET 1.1 OVERVIEW OF THE BOOK . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . 1 1.2 DEVELOPMENT OF
AMORPHOUS SILICON . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . 2 1.3 BASIC PROPERTIES OF AMORPHOUS SILICON . . . . . . . . . . . .
. . . . . . . . . . . . . . 3 REFERENCES . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. 5 2 ACTIVE-MATRIX LIQUID-CRYSTAL DISPLAYS :::::::::::::::::::: 7
TOSHIHISA TSUKADA 2.1 INTRODUCTION. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 TFT
LCD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . 9 2.2.1 TFT LCD CON*GURATION . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.2.2 PIXEL
DESIGN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . 14 2.2.3 DESIGN ANALYSIS . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.2.4 SCALING
THEORY OF TFT LCD . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 26 2.2.5 FABRICATION OF TFT PANELS. . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . 34 2.3 THIN-FILM TRANSISTORS . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
2.3.1 HYDROGENATED AMORPHOUS SILICON THIN-FILM TRANSISTORS. . . . . . 39
2.3.2 TFT CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . 41 2.3.3 THRESHOLD VOLTAGE SHIFT . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 2.3.4
SIMULATION OF TFT BEHAVIOR . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 53 2.3.5 TWO-TERMINAL DEVICES . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . 60 2.4 LIQUID CRYSTAL . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 61 2.4.1 PHYSICAL CONSTANTS OF LIQUID CRYSTAL . . . . . .
. . . . . . . . . . . . . . . . . 64 2.4.2 TWISTED-NEMATIC CELL . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 2.4.3
IN-PLANE-SWITCHING CELL . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 81 2.4.4 SUPER-TWISTED NEMATIC (STN) CELL . . . . .
. . . . . . . . . . . . . . . . . . . 87 REFERENCES . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 89 3 LASER CRYSTALLIZATION FOR POLYCRYSTALLINE SILICON
DEVICE APPLICATIONS :::::::::::::::: 94 JAMES B. BOYCE AND PING MEI 3.1
INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . 94 3.2 LASER PROCESSING OF
POLYSILICON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 96 VIII CONTENTS 3.2.1 POLYSILICON. . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 3.2.2
LASER CRYSTALLIZATION . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . 101 3.2.3 GRAIN GROWTH . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 3.2.4
SURFACE ROUGHENING . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 110 3.2.5 LASER DOPING . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 111 3.3
LOW-TEMPERATURE POLY-SI DEVICES . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 117 3.3.1 DEVICE FABRICATION. . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . 118 3.3.2 CMOS
DEVICE PERFORMANCE . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . 121 3.3.3 DEVICE LEAKAGE CURRENTS . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . 126 3.3.4 DEVICE STABILITY . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
130 3.4 INTEGRATION OF A-SI AND POLY-SI TFTS . . . . . . . . . . . . . .
. . . . . . . . . . . . . 132 3.4.1 DEVELOPMENT OF HYBRID A-SI AND
POLY-SI DEVICES . . . . . . . . . . . . 133 3.4.2 HYBRID MATERIALS
PROCESSING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
135 3.4.3 DEVICE FABRICATION AND PERFORMANCE . . . . . . . . . . . . . .
. . . . . . . . . 138 3.5 CONCLUSION . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 143 4 LARGE AREA IMAGE
SENSOR ARRAYS :::::::::::::::::::::::::: 147 ROBERT STREET 4.1
INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . 147 4.2 DEVICES . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . 148 4.2.1 P-I-N PHOTODIODES . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 148 4.2.2 THIN FILM
TRANSISTORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 157 4.3 SENSOR ARRAY DESIGNS . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 160 4.3.1 MATRIX
ADDRESSED READOUT . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . 161 4.3.2 TFT ADDRESSED, P-I-N PHOTODIODE ARRAYS. . . . . . . .
. . . . . . . . . . . 161 4.3.3 HIGH FILL FACTOR ARRAY DESIGNS . . . . .
. . . . . . . . . . . . . . . . . . . . . . . 171 4.3.4 TFT ADDRESSED,
X-RAY PHOTOCONDUCTOR ARRAYS . . . . . . . . . . . . . 172 4.3.5 DIODE
ADDRESSED ARRAYS . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 175 4.3.6 CMOS SENSORS . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . 178 4.4 IMAGING SYSTEMS
AND THEIR PERFORMANCE . . . . . . . . . . . . . . . . . . . . . . . .
178 4.4.1 ELECTRONICS . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . 179 4.4.2 ELECTRONIC NOISE . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . 185 4.4.3 X-RAY DETECTION . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . 191 4.4.4 THE PERFORMANCE OF X-RAY
DETECTORS . . . . . . . . . . . . . . . . . . . . . . 194 4.5
APPLICATIONS OF LARGE AREA IMAGE SENSORS . . . . . . . . . . . . . . . .
. . . . . . . 204 4.5.1 MEDICAL X-RAY IMAGING . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . 204 4.5.2 OTHER RADIATION
IMAGING APPLICATIONS . . . . . . . . . . . . . . . . . . . . . 211 4.5.3
DOCUMENT SCANNING . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 214 4.6 FUTURE DEVELOPMENTS . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 216 REFERENCES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . 217 5 NOVEL PROCESSING TECHNOLOGY FOR
MACROELECTRONICS :::::::: 222 S. WAGNER, H. GLESKOVA, J.C. STURM, AND Z.
SUO 5.1 INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . 222 CONTENTS IX 5.2
RESOLUTION AND REGISTRATION: THE DENSITY OF FUNCTIONS ACHIEVABLE BY
PRINTING . . . . . . . . . . . . . . . . . 225 5.3 PRINTED TONER MASKS
FOR ETCHING AND LIFTO* . . . . . . . . . . . . . . . . . . . . . 228
5.3.1 TONER MASKS VIA PAPER TRANSFER: TFTS ON GLASS FOIL . . . . . . . .
228 5.3.2 ALL MASKS PRINTED DIRECTLY: TFTS ON STEEL FOIL . . . . . . . .
. . . . . 230 5.4 PRINTING ACTIVE MATERIALS: JETTING DOPED POLYMERS FOR
ORGANIC LIGHT EMITTING DEVICES. . . . . . . . . . . . . . . . . . . . .
. . . . . . . . 232 5.5 SUBSTRATES AND ENCAPSULATION FOR MACROELECTRONIC
CIRCUITS . . . . . . . . 236 5.6 PLASTIC SUBSTRATE FOIL: TFT ON
POLYIMIDE . . . . . . . . . . . . . . . . . . . . . . . 244 5.7 3-D
INTEGRATION ON A FOIL SUBSTRATE: OLED/TFT PIXEL ELEMENTS ON STEEL . . .
. . . . . . . . . . . . . . . . . . . . . . . . 246 5.8 OUTLOOK . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . 249 REFERENCES . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250 6 MULTIJUNCTION SOLAR CELLS AND MODULES :::::::::::::::::::: 252
SUBHENDU GUHA 6.1 INTRODUCTION. . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 252 6.2
DEPOSITION METHODS . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . 254 6.2.1 GLOW-DISCHARGE DEPOSITION
TECHNIQUE . . . . . . . . . . . . . . . . . . . . . . 254 6.2.2 PLASMA
CHEMISTRY AND THE GROWTH PROCESS . . . . . . . . . . . . . . . . . 254
6.2.3 FACTORS THAT INFLUENCE FILM AND CELL QUALITY . . . . . . . . . . .
. . . . . 256 6.3 SINGLE-JUNCTION CELLS . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 258 6.3.1 CELL
STRUCTURE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . 258 6.3.2 CELL CHARACTERISTICS . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 259 6.3.3
NUMERICAL MODELING . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 261 6.3.4 LIGHT-INDUCED DEGRADATION . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . 264 6.4 HIGH E*CIENCY
CELLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . 268 6.4.1 INTRODUCTION . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . 268 6.4.2
MULTIJUNCTION CELL . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . 269 6.4.3 KEY REQUIREMENTS FOR OBTAINING HIGH
E*CIENCY . . . . . . . . . . . . 270 6.4.4 BACK REFLECTOR . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
270 6.4.5 DOPED LAYER . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . 275 6.4.6 INTRINSIC LAYERS . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. 277 6.4.7 OPTIMIZATION OF THE COMPONENT CELLS AND CURRENT MATCHING . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 281
6.4.8 TUNNEL JUNCTION . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . 282 6.4.9 TOP CONDUCTING OXIDE . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285 6.4.10
CELL AND MODULE PERFORMANCE . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 285 6.5 MANUFACTURING TECHNOLOGY . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 287 6.5.1 MANUFACTURING
PROCESS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 287 6.5.2 PRODUCTION STATUS AND PRODUCT ADVANTAGE . . . . . . . .
. . . . . . . . . 293 6.6 ALTERNATIVE TECHNOLOGIES AND FUTURE TRENDS . .
. . . . . . . . . . . . . . . . . . . 295 REFERENCES . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 299 X CONTENTS 7 MULTILAYER COLOR DETECTORS
:::::::::::::::::::::::::::::::: 306 FABRIZIO PALMA 7.1 INTRODUCTION. .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . 306 7.1.1 APPLICATIONS OF A-SI:H COLOR SENSORS . .
. . . . . . . . . . . . . . . . . . . . . 307 7.2 OPTICAL PROPERTIES OF
AMORPHOUS SILICON . . . . . . . . . . . . . . . . . . . . . . . . 308
7.2.1 OPTICAL PROPERTIES OF AMORPHOUS SILICON ALLOYS . . . . . . . . . .
. . . 310 7.2.2 OPTICAL DESIGN OF LAYERED A-SI:H STRUCTURES . . . . . .
. . . . . . . . . . 312 7.3 TWO-COLOR SENSORS . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315 7.3.1
STEADY STATE AND TRANSIENT OPERATION . . . . . . . . . . . . . . . . . .
. . . 317 7.3.2 SPICE MODEL OF THE TWO COLOR DETECTOR . . . . . . . . .
. . . . . . . . . . 319 7.4 THREE-COLOR SENSORS . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 7.4.1
THREE COLOR DISCRIMINATION WITH TWO ELECTRICAL TERMINALS. . . . 320
7.4.2 ADJUSTABLE THRESHOLD THREE COLOR DETECTOR (ATCD) . . . . . . . . .
323 7.4.3 THREE COLOR DETECTORS IN THE TIME INTEGRATION REGIME . . . . .
. . 327 7.4.4 MECHANISM OF AUTOPOLARIZATION OF THE STACKED CELLS . . . .
. . . . . 328 7.5 A-SI:H BASED UV SENSORS . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 332 7.5.1 STRUCTURE AND
OPERATION OF THE UV DETECTOR . . . . . . . . . . . . . . . . 333 7.6
A-SI:H BASED IR SENSORS . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . 334 7.6.1 IR DETECTION BY DI*ERENTIAL
PHOTO-CAPACITANCE . . . . . . . . . . . . . 336 REFERENCES . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 338 8 THIN FILM POSITION SENSITIVE DETECTORS: FROM
1D TO 3D APPLICATIONS :::::::::::::::::::::::::::::::::: 342 RODRIGO
MARTINS AND ELVIRA FORTUNATO 8.1 INTRODUCTION AND HISTORICAL BACKGROUND
. . . . . . . . . . . . . . . . . . . . . . . . 342 8.1.1 WHY USE
AMORPHOUS SILICON TO PRODUCE POSITION SENSITIVE DETECTORS? . . . . . . .
. . . . . . . . . . . . 343 8.2 PRINCIPLES OF OPERATION OF 1D AND 2D PSD
. . . . . . . . . . . . . . . . . . . . . . 346 8.2.1 THE DI*ERENT TYPES
OF PSD DEVICES THAT CAN BE PRODUCED . . 348 8.2.2 DI*ERENT TYPES OF
A-SI:H TFPSD AND THE PRODUCTION PROCESSES USED . . . . . . . . . . . . .
. . . . . . . . . . . 349 8.3 PHYSICAL MODEL FOR THE LATERAL PHOTO-E*ECT
IN A-SI:H P-I-N 1D AND 2D TFPSD . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . 358 8.3.1 INTRODUCTION . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 358 8.3.2
GENERAL DESCRIPTION OF THE 1D THEORETICAL MODEL . . . . . . . . . . . .
359 8.3.3 ROLE OF THE RECOMBINATION LOSSES FOR THE FALL-O* PARAMETER . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 362 8.3.4
STATIC BEHAVIOUR OF E Y AND * Y . . . . . . . . . . . . . . . . . . . .
. . . . . . . . 364 8.3.5 ROLE OF * S AND * SD FOR THE DEVICE DETECTION
LIMITS, LINEARITY, AND SPATIAL RESOLUTION . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . 365 8.3.6 STATIC DISTRIBUTION OF
THE LATERAL CURRENT . . . . . . . . . . . . . . . . . . 365 8.3.7
EXTENSION OF THE THEORETICAL 1D MODEL TO THE 2D CASE . . . . . . . 367
8.3.8 DETERMINATION OF THE TRANSIENT RESPONSE TIME OF THE TFPSD . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . 368 8.4 STATIC AND DYNAMIC DETECTION LIMITS . . . . . . . . . . . .
. . . . . . . . . . . . . . . 371 CONTENTS XI 8.4.1 STATIC DETECTION
LIMITS OF 1D TFPSD . . . . . . . . . . . . . . . . . . . . . . 371 8.4.2
LINEARITY AND SPATIAL RESOLUTION OF 1D TFPSD . . . . . . . . . . . . .
372 8.4.3 POSITION RESPONSE TO MULTIPLE LIGHT BEAMS . . . . . . . . . .
. . . . . . . 374 8.4.4 STATIC PREDICTED AND EXPERIMENTAL PERFORMANCE OF
THE 2D TFPSD DEVICE . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 376 8.5 DYNAMIC PERFORMANCE OF THE 1D AND 2D TFPSD . . . .
. . . . . . . . . . . . . 376 8.5.1 RESPONSE TIME OF THE TFPSD . . . . .
. . . . . . . . . . . . . . . . . . . . . . . 379 8.5.2 DETECTION OF
LIGHT SIGNALS WITH DI*ERENT WAVELENGTHS . . . . . . . . 381 8.6
CHARACTERISTICS OF THE A-SI:H P-I-N STRUCTURES USED TO PRODUCE THE TFPSD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 383
8.6.1 J { V CURVES . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . 383 8.6.2 DEPENDENCE OF THE SATURATION
CURRENT OF THE DEVICE ON T . . . . 385 8.6.3 SPECTRAL RESPONSE AND
DETECTIVITY . . . . . . . . . . . . . . . . . . . . . . . . . 386 8.7
PERIPHERALS FOR 1D AND 2D TFPSD SIGNAL PROCESSING . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . 387 8.7.1 OPTICAL METHODS . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
387 8.7.2 PERIPHERALS FOR SIGNAL PROCESSING . . . . . . . . . . . . . .
. . . . . . . . . . . . 389 8.8 SIMULATED AND EXPERIMENTAL DATA IN 2D
OPTICAL INSPECTION SYSTEMS WITH TFPSD DETECTOR . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . 392 8.9 LINEAR
ARRAY OF THIN FILM POSITION SENSITIVE DETECTOR (LTFPSD) . . 393 8.9.1
PRINCIPLES OF THE OPTICAL METHODS USED . . . . . . . . . . . . . . . . .
. . . 394 8.9.2 POSITIONAL RESOLUTION OF THE ARRAY . . . . . . . . . . .
. . . . . . . . . . . . . . 395 8.9.3 HARDWARE TO CONTROL ARRAYS OF
MULTIPLE 1D SENSORS. . . . . . . . . . 396 8.9.4 BANDWIDTH REQUIREMENTS
FOR THE PREAMPLI*ERS USED IN THE HARDWARE CONTROL UNIT OF THE LTFPSD . .
. . . . . . . . 398 8.10 SUMMARY AND FUTURE OUTLOOK . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 399 REFERENCES . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 400 SYMBOLS AND ABBREVIATIONS
::::::::::::::::::::::::::::::::::: 404 SUBJECT INDEX
:::::::::::::::::::::::::::::::::::::::::::::::: 411
|
any_adam_object | 1 |
author_GND | (DE-588)120965585 |
building | Verbundindex |
bvnumber | BV012608338 |
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classification_tum | ELT 072f |
ctrlnum | (OCoLC)634370522 (DE-599)BVBBV012608338 |
discipline | Physik Elektrotechnik |
format | Book |
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id | DE-604.BV012608338 |
illustrated | Illustrated |
indexdate | 2024-07-09T18:30:32Z |
institution | BVB |
isbn | 3540657142 |
language | German |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008563547 |
oclc_num | 634370522 |
open_access_boolean | |
owner | DE-703 DE-91 DE-BY-TUM DE-83 DE-11 |
owner_facet | DE-703 DE-91 DE-BY-TUM DE-83 DE-11 |
physical | XI, 417 S. graph. Darst. |
publishDate | 2000 |
publishDateSearch | 2000 |
publishDateSort | 2000 |
publisher | Springer |
record_format | marc |
series | Springer series in materials science |
series2 | Springer series in materials science |
spelling | Technology and applications of amorphous silicon with 20 tables Robert A. Street (ed.) Berlin [u.a.] Springer 2000 XI, 417 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 37 Amorpher Zustand (DE-588)4306087-0 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Silicium (DE-588)4077445-4 s Amorpher Zustand (DE-588)4306087-0 s DE-604 Street, Robert A. 1947- Sonstige (DE-588)120965585 oth Springer series in materials science 37 (DE-604)BV000683335 37 SWB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008563547&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Technology and applications of amorphous silicon with 20 tables Springer series in materials science Amorpher Zustand (DE-588)4306087-0 gnd Silicium (DE-588)4077445-4 gnd |
subject_GND | (DE-588)4306087-0 (DE-588)4077445-4 |
title | Technology and applications of amorphous silicon with 20 tables |
title_auth | Technology and applications of amorphous silicon with 20 tables |
title_exact_search | Technology and applications of amorphous silicon with 20 tables |
title_full | Technology and applications of amorphous silicon with 20 tables Robert A. Street (ed.) |
title_fullStr | Technology and applications of amorphous silicon with 20 tables Robert A. Street (ed.) |
title_full_unstemmed | Technology and applications of amorphous silicon with 20 tables Robert A. Street (ed.) |
title_short | Technology and applications of amorphous silicon |
title_sort | technology and applications of amorphous silicon with 20 tables |
title_sub | with 20 tables |
topic | Amorpher Zustand (DE-588)4306087-0 gnd Silicium (DE-588)4077445-4 gnd |
topic_facet | Amorpher Zustand Silicium |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008563547&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
volume_link | (DE-604)BV000683335 |
work_keys_str_mv | AT streetroberta technologyandapplicationsofamorphoussiliconwith20tables |