Verfügbarkeit: Technology and applications of amorphous silicon

Technology and applications of amorphous silicon: with 20 tables

Gespeichert in:

Bibliographische Detailangaben
Format:	Buch
Sprache:	German
Veröffentlicht:	Berlin [u.a.] Springer 2000
Schriftenreihe:	Springer series in materials science 37
Schlagworte:	Amorpher Zustand Silicium
Online-Zugang:	Inhaltsverzeichnis
Beschreibung:	XI, 417 S. graph. Darst.
ISBN:	3540657142

Internformat

MARC


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245	1	0	\|a Technology and applications of amorphous silicon \|b with 20 tables \|c Robert A. Street (ed.)
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Datensatz im Suchindex

_version_	1804127260949610496
adam_text	CONTENTS 1 INTRODUCTION :::::::::::::::::::::::::::::::::::::::::::::: 1 ROBERT STREET 1.1 OVERVIEW OF THE BOOK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 DEVELOPMENT OF AMORPHOUS SILICON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.3 BASIC PROPERTIES OF AMORPHOUS SILICON . . . . . . . . . . . . . . . . . . . . . . . . . . 3 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 ACTIVE-MATRIX LIQUID-CRYSTAL DISPLAYS :::::::::::::::::::: 7 TOSHIHISA TSUKADA 2.1 INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 TFT LCD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.2.1 TFT LCD CONGURATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.2.2 PIXEL DESIGN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.2.3 DESIGN ANALYSIS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.2.4 SCALING THEORY OF TFT LCD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 2.2.5 FABRICATION OF TFT PANELS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 2.3 THIN-FILM TRANSISTORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 2.3.1 HYDROGENATED AMORPHOUS SILICON THIN-FILM TRANSISTORS. . . . . . 39 2.3.2 TFT CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 2.3.3 THRESHOLD VOLTAGE SHIFT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 2.3.4 SIMULATION OF TFT BEHAVIOR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 2.3.5 TWO-TERMINAL DEVICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 2.4 LIQUID CRYSTAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 2.4.1 PHYSICAL CONSTANTS OF LIQUID CRYSTAL . . . . . . . . . . . . . . . . . . . . . . . 64 2.4.2 TWISTED-NEMATIC CELL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 2.4.3 IN-PLANE-SWITCHING CELL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 2.4.4 SUPER-TWISTED NEMATIC (STN) CELL . . . . . . . . . . . . . . . . . . . . . . . . 87 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89 3 LASER CRYSTALLIZATION FOR POLYCRYSTALLINE SILICON DEVICE APPLICATIONS :::::::::::::::: 94 JAMES B. BOYCE AND PING MEI 3.1 INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94 3.2 LASER PROCESSING OF POLYSILICON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 VIII CONTENTS 3.2.1 POLYSILICON. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 3.2.2 LASER CRYSTALLIZATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 3.2.3 GRAIN GROWTH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 3.2.4 SURFACE ROUGHENING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 3.2.5 LASER DOPING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111 3.3 LOW-TEMPERATURE POLY-SI DEVICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117 3.3.1 DEVICE FABRICATION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 3.3.2 CMOS DEVICE PERFORMANCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 3.3.3 DEVICE LEAKAGE CURRENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126 3.3.4 DEVICE STABILITY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 3.4 INTEGRATION OF A-SI AND POLY-SI TFTS . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 3.4.1 DEVELOPMENT OF HYBRID A-SI AND POLY-SI DEVICES . . . . . . . . . . . . 133 3.4.2 HYBRID MATERIALS PROCESSING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135 3.4.3 DEVICE FABRICATION AND PERFORMANCE . . . . . . . . . . . . . . . . . . . . . . . 138 3.5 CONCLUSION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 4 LARGE AREA IMAGE SENSOR ARRAYS :::::::::::::::::::::::::: 147 ROBERT STREET 4.1 INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147 4.2 DEVICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148 4.2.1 P-I-N PHOTODIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148 4.2.2 THIN FILM TRANSISTORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157 4.3 SENSOR ARRAY DESIGNS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 4.3.1 MATRIX ADDRESSED READOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 4.3.2 TFT ADDRESSED, P-I-N PHOTODIODE ARRAYS. . . . . . . . . . . . . . . . . . . 161 4.3.3 HIGH FILL FACTOR ARRAY DESIGNS . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171 4.3.4 TFT ADDRESSED, X-RAY PHOTOCONDUCTOR ARRAYS . . . . . . . . . . . . . 172 4.3.5 DIODE ADDRESSED ARRAYS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175 4.3.6 CMOS SENSORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 4.4 IMAGING SYSTEMS AND THEIR PERFORMANCE . . . . . . . . . . . . . . . . . . . . . . . . 178 4.4.1 ELECTRONICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179 4.4.2 ELECTRONIC NOISE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185 4.4.3 X-RAY DETECTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191 4.4.4 THE PERFORMANCE OF X-RAY DETECTORS . . . . . . . . . . . . . . . . . . . . . . 194 4.5 APPLICATIONS OF LARGE AREA IMAGE SENSORS . . . . . . . . . . . . . . . . . . . . . . . 204 4.5.1 MEDICAL X-RAY IMAGING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204 4.5.2 OTHER RADIATION IMAGING APPLICATIONS . . . . . . . . . . . . . . . . . . . . . 211 4.5.3 DOCUMENT SCANNING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214 4.6 FUTURE DEVELOPMENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 216 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 217 5 NOVEL PROCESSING TECHNOLOGY FOR MACROELECTRONICS :::::::: 222 S. WAGNER, H. GLESKOVA, J.C. STURM, AND Z. SUO 5.1 INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 222 CONTENTS IX 5.2 RESOLUTION AND REGISTRATION: THE DENSITY OF FUNCTIONS ACHIEVABLE BY PRINTING . . . . . . . . . . . . . . . . . 225 5.3 PRINTED TONER MASKS FOR ETCHING AND LIFTO . . . . . . . . . . . . . . . . . . . . . 228 5.3.1 TONER MASKS VIA PAPER TRANSFER: TFTS ON GLASS FOIL . . . . . . . . 228 5.3.2 ALL MASKS PRINTED DIRECTLY: TFTS ON STEEL FOIL . . . . . . . . . . . . . 230 5.4 PRINTING ACTIVE MATERIALS: JETTING DOPED POLYMERS FOR ORGANIC LIGHT EMITTING DEVICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 232 5.5 SUBSTRATES AND ENCAPSULATION FOR MACROELECTRONIC CIRCUITS . . . . . . . . 236 5.6 PLASTIC SUBSTRATE FOIL: TFT ON POLYIMIDE . . . . . . . . . . . . . . . . . . . . . . . 244 5.7 3-D INTEGRATION ON A FOIL SUBSTRATE: OLED/TFT PIXEL ELEMENTS ON STEEL . . . . . . . . . . . . . . . . . . . . . . . . . . . 246 5.8 OUTLOOK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 6 MULTIJUNCTION SOLAR CELLS AND MODULES :::::::::::::::::::: 252 SUBHENDU GUHA 6.1 INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 252 6.2 DEPOSITION METHODS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 254 6.2.1 GLOW-DISCHARGE DEPOSITION TECHNIQUE . . . . . . . . . . . . . . . . . . . . . . 254 6.2.2 PLASMA CHEMISTRY AND THE GROWTH PROCESS . . . . . . . . . . . . . . . . . 254 6.2.3 FACTORS THAT INFLUENCE FILM AND CELL QUALITY . . . . . . . . . . . . . . . . 256 6.3 SINGLE-JUNCTION CELLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258 6.3.1 CELL STRUCTURE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258 6.3.2 CELL CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 259 6.3.3 NUMERICAL MODELING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 261 6.3.4 LIGHT-INDUCED DEGRADATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 264 6.4 HIGH ECIENCY CELLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 268 6.4.1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 268 6.4.2 MULTIJUNCTION CELL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 269 6.4.3 KEY REQUIREMENTS FOR OBTAINING HIGH ECIENCY . . . . . . . . . . . . 270 6.4.4 BACK REFLECTOR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270 6.4.5 DOPED LAYER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275 6.4.6 INTRINSIC LAYERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 277 6.4.7 OPTIMIZATION OF THE COMPONENT CELLS AND CURRENT MATCHING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 281 6.4.8 TUNNEL JUNCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 282 6.4.9 TOP CONDUCTING OXIDE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285 6.4.10 CELL AND MODULE PERFORMANCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285 6.5 MANUFACTURING TECHNOLOGY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 287 6.5.1 MANUFACTURING PROCESS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 287 6.5.2 PRODUCTION STATUS AND PRODUCT ADVANTAGE . . . . . . . . . . . . . . . . . 293 6.6 ALTERNATIVE TECHNOLOGIES AND FUTURE TRENDS . . . . . . . . . . . . . . . . . . . . . 295 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 299 X CONTENTS 7 MULTILAYER COLOR DETECTORS :::::::::::::::::::::::::::::::: 306 FABRIZIO PALMA 7.1 INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 306 7.1.1 APPLICATIONS OF A-SI:H COLOR SENSORS . . . . . . . . . . . . . . . . . . . . . . . 307 7.2 OPTICAL PROPERTIES OF AMORPHOUS SILICON . . . . . . . . . . . . . . . . . . . . . . . . 308 7.2.1 OPTICAL PROPERTIES OF AMORPHOUS SILICON ALLOYS . . . . . . . . . . . . . 310 7.2.2 OPTICAL DESIGN OF LAYERED A-SI:H STRUCTURES . . . . . . . . . . . . . . . . 312 7.3 TWO-COLOR SENSORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315 7.3.1 STEADY STATE AND TRANSIENT OPERATION . . . . . . . . . . . . . . . . . . . . . 317 7.3.2 SPICE MODEL OF THE TWO COLOR DETECTOR . . . . . . . . . . . . . . . . . . . 319 7.4 THREE-COLOR SENSORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 7.4.1 THREE COLOR DISCRIMINATION WITH TWO ELECTRICAL TERMINALS. . . . 320 7.4.2 ADJUSTABLE THRESHOLD THREE COLOR DETECTOR (ATCD) . . . . . . . . . 323 7.4.3 THREE COLOR DETECTORS IN THE TIME INTEGRATION REGIME . . . . . . . 327 7.4.4 MECHANISM OF AUTOPOLARIZATION OF THE STACKED CELLS . . . . . . . . . 328 7.5 A-SI:H BASED UV SENSORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 332 7.5.1 STRUCTURE AND OPERATION OF THE UV DETECTOR . . . . . . . . . . . . . . . . 333 7.6 A-SI:H BASED IR SENSORS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 334 7.6.1 IR DETECTION BY DIERENTIAL PHOTO-CAPACITANCE . . . . . . . . . . . . . 336 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 338 8 THIN FILM POSITION SENSITIVE DETECTORS: FROM 1D TO 3D APPLICATIONS :::::::::::::::::::::::::::::::::: 342 RODRIGO MARTINS AND ELVIRA FORTUNATO 8.1 INTRODUCTION AND HISTORICAL BACKGROUND . . . . . . . . . . . . . . . . . . . . . . . . 342 8.1.1 WHY USE AMORPHOUS SILICON TO PRODUCE POSITION SENSITIVE DETECTORS? . . . . . . . . . . . . . . . . . . . 343 8.2 PRINCIPLES OF OPERATION OF 1D AND 2D PSD . . . . . . . . . . . . . . . . . . . . . . 346 8.2.1 THE DIERENT TYPES OF PSD DEVICES THAT CAN BE PRODUCED . . 348 8.2.2 DIERENT TYPES OF A-SI:H TFPSD AND THE PRODUCTION PROCESSES USED . . . . . . . . . . . . . . . . . . . . . . . . 349 8.3 PHYSICAL MODEL FOR THE LATERAL PHOTO-EECT IN A-SI:H P-I-N 1D AND 2D TFPSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 358 8.3.1 INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 358 8.3.2 GENERAL DESCRIPTION OF THE 1D THEORETICAL MODEL . . . . . . . . . . . . 359 8.3.3 ROLE OF THE RECOMBINATION LOSSES FOR THE FALL-O* PARAMETER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 362 8.3.4 STATIC BEHAVIOUR OF E Y AND * Y . . . . . . . . . . . . . . . . . . . . . . . . . . . . 364 8.3.5 ROLE OF * S AND * SD FOR THE DEVICE DETECTION LIMITS, LINEARITY, AND SPATIAL RESOLUTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 365 8.3.6 STATIC DISTRIBUTION OF THE LATERAL CURRENT . . . . . . . . . . . . . . . . . . 365 8.3.7 EXTENSION OF THE THEORETICAL 1D MODEL TO THE 2D CASE . . . . . . . 367 8.3.8 DETERMINATION OF THE TRANSIENT RESPONSE TIME OF THE TFPSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 368 8.4 STATIC AND DYNAMIC DETECTION LIMITS . . . . . . . . . . . . . . . . . . . . . . . . . . . 371 CONTENTS XI 8.4.1 STATIC DETECTION LIMITS OF 1D TFPSD . . . . . . . . . . . . . . . . . . . . . . 371 8.4.2 LINEARITY AND SPATIAL RESOLUTION OF 1D TFPSD . . . . . . . . . . . . . 372 8.4.3 POSITION RESPONSE TO MULTIPLE LIGHT BEAMS . . . . . . . . . . . . . . . . . 374 8.4.4 STATIC PREDICTED AND EXPERIMENTAL PERFORMANCE OF THE 2D TFPSD DEVICE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 376 8.5 DYNAMIC PERFORMANCE OF THE 1D AND 2D TFPSD . . . . . . . . . . . . . . . . . 376 8.5.1 RESPONSE TIME OF THE TFPSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 379 8.5.2 DETECTION OF LIGHT SIGNALS WITH DIERENT WAVELENGTHS . . . . . . . . 381 8.6 CHARACTERISTICS OF THE A-SI:H P-I-N STRUCTURES USED TO PRODUCE THE TFPSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 383 8.6.1 J { V CURVES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 383 8.6.2 DEPENDENCE OF THE SATURATION CURRENT OF THE DEVICE ON T . . . . 385 8.6.3 SPECTRAL RESPONSE AND DETECTIVITY . . . . . . . . . . . . . . . . . . . . . . . . . 386 8.7 PERIPHERALS FOR 1D AND 2D TFPSD SIGNAL PROCESSING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 387 8.7.1 OPTICAL METHODS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 387 8.7.2 PERIPHERALS FOR SIGNAL PROCESSING . . . . . . . . . . . . . . . . . . . . . . . . . . 389 8.8 SIMULATED AND EXPERIMENTAL DATA IN 2D OPTICAL INSPECTION SYSTEMS WITH TFPSD DETECTOR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 392 8.9 LINEAR ARRAY OF THIN FILM POSITION SENSITIVE DETECTOR (LTFPSD) . . 393 8.9.1 PRINCIPLES OF THE OPTICAL METHODS USED . . . . . . . . . . . . . . . . . . . . 394 8.9.2 POSITIONAL RESOLUTION OF THE ARRAY . . . . . . . . . . . . . . . . . . . . . . . . . 395 8.9.3 HARDWARE TO CONTROL ARRAYS OF MULTIPLE 1D SENSORS. . . . . . . . . . 396 8.9.4 BANDWIDTH REQUIREMENTS FOR THE PREAMPLIERS USED IN THE HARDWARE CONTROL UNIT OF THE LTFPSD . . . . . . . . . . 398 8.10 SUMMARY AND FUTURE OUTLOOK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 399 REFERENCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 SYMBOLS AND ABBREVIATIONS ::::::::::::::::::::::::::::::::::: 404 SUBJECT INDEX :::::::::::::::::::::::::::::::::::::::::::::::: 411
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spelling	Technology and applications of amorphous silicon with 20 tables Robert A. Street (ed.) Berlin [u.a.] Springer 2000 XI, 417 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 37 Amorpher Zustand (DE-588)4306087-0 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Silicium (DE-588)4077445-4 s Amorpher Zustand (DE-588)4306087-0 s DE-604 Street, Robert A. 1947- Sonstige (DE-588)120965585 oth Springer series in materials science 37 (DE-604)BV000683335 37 SWB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008563547&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Technology and applications of amorphous silicon with 20 tables Springer series in materials science Amorpher Zustand (DE-588)4306087-0 gnd Silicium (DE-588)4077445-4 gnd
subject_GND	(DE-588)4306087-0 (DE-588)4077445-4
title	Technology and applications of amorphous silicon with 20 tables
title_auth	Technology and applications of amorphous silicon with 20 tables
title_exact_search	Technology and applications of amorphous silicon with 20 tables
title_full	Technology and applications of amorphous silicon with 20 tables Robert A. Street (ed.)
title_fullStr	Technology and applications of amorphous silicon with 20 tables Robert A. Street (ed.)
title_full_unstemmed	Technology and applications of amorphous silicon with 20 tables Robert A. Street (ed.)
title_short	Technology and applications of amorphous silicon
title_sort	technology and applications of amorphous silicon with 20 tables
title_sub	with 20 tables
topic	Amorpher Zustand (DE-588)4306087-0 gnd Silicium (DE-588)4077445-4 gnd
topic_facet	Amorpher Zustand Silicium
url	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008563547&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
volume_link	(DE-604)BV000683335
work_keys_str_mv	AT streetroberta technologyandapplicationsofamorphoussiliconwith20tables

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