High performance InP-based HEMTs with dry etched gate recess:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Mikrofilm Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
1998
|
| Ausgabe: | [Mikrofiche-Ausg.] |
| Schlagworte: | |
| Beschreibung: | Zürich, Techn. Hochsch., Diss., 1998. - Mikrofiche-Ausg.: 2 Mikrofiches : 24x |
| Beschreibung: | IV, 127 S. Ill., graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV012598963 | ||
| 003 | DE-604 | ||
| 005 | 19990809 | ||
| 007 | he|uuuuuuuuuu | ||
| 008 | 990609s1998 ad|| bm||| 00||| undod | ||
| 035 | |a (OCoLC)634270320 | ||
| 035 | |a (DE-599)BVBBV012598963 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | |a und | ||
| 049 | |a DE-91 | ||
| 084 | |a ELT 285d |2 stub | ||
| 084 | |a ELT 321d |2 stub | ||
| 100 | 1 | |a Duran, Halit C. |d 1969- |e Verfasser |0 (DE-588)12069025X |4 aut | |
| 245 | 1 | 0 | |a High performance InP-based HEMTs with dry etched gate recess |c presented by Halit C. Duran |
| 250 | |a [Mikrofiche-Ausg.] | ||
| 264 | 1 | |c 1998 | |
| 300 | |a IV, 127 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b h |2 rdamedia | ||
| 338 | |b he |2 rdacarrier | ||
| 500 | |a Zürich, Techn. Hochsch., Diss., 1998. - Mikrofiche-Ausg.: 2 Mikrofiches : 24x | ||
| 650 | 0 | 7 | |a HEMT |0 (DE-588)4211873-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ionenstrahlätzen |0 (DE-588)4162299-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Indiumphosphid |0 (DE-588)4161535-9 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a HEMT |0 (DE-588)4211873-6 |D s |
| 689 | 0 | 1 | |a Indiumphosphid |0 (DE-588)4161535-9 |D s |
| 689 | 0 | 2 | |a Ionenstrahlätzen |0 (DE-588)4162299-6 |D s |
| 689 | 0 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-008556088 | ||
Datensatz im Suchindex
| _version_ | 1804127249664835584 |
|---|---|
| any_adam_object | |
| author | Duran, Halit C. 1969- |
| author_GND | (DE-588)12069025X |
| author_facet | Duran, Halit C. 1969- |
| author_role | aut |
| author_sort | Duran, Halit C. 1969- |
| author_variant | h c d hc hcd |
| building | Verbundindex |
| bvnumber | BV012598963 |
| classification_tum | ELT 285d ELT 321d |
| ctrlnum | (OCoLC)634270320 (DE-599)BVBBV012598963 |
| discipline | Elektrotechnik |
| edition | [Mikrofiche-Ausg.] |
| format | Microfilm Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV012598963 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:30:21Z |
| institution | BVB |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008556088 |
| oclc_num | 634270320 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM |
| owner_facet | DE-91 DE-BY-TUM |
| physical | IV, 127 S. Ill., graph. Darst. |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| record_format | marc |
| spelling | Duran, Halit C. 1969- Verfasser (DE-588)12069025X aut High performance InP-based HEMTs with dry etched gate recess presented by Halit C. Duran [Mikrofiche-Ausg.] 1998 IV, 127 S. Ill., graph. Darst. txt rdacontent h rdamedia he rdacarrier Zürich, Techn. Hochsch., Diss., 1998. - Mikrofiche-Ausg.: 2 Mikrofiches : 24x HEMT (DE-588)4211873-6 gnd rswk-swf Ionenstrahlätzen (DE-588)4162299-6 gnd rswk-swf Indiumphosphid (DE-588)4161535-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content HEMT (DE-588)4211873-6 s Indiumphosphid (DE-588)4161535-9 s Ionenstrahlätzen (DE-588)4162299-6 s DE-604 |
| spellingShingle | Duran, Halit C. 1969- High performance InP-based HEMTs with dry etched gate recess HEMT (DE-588)4211873-6 gnd Ionenstrahlätzen (DE-588)4162299-6 gnd Indiumphosphid (DE-588)4161535-9 gnd |
| subject_GND | (DE-588)4211873-6 (DE-588)4162299-6 (DE-588)4161535-9 (DE-588)4113937-9 |
| title | High performance InP-based HEMTs with dry etched gate recess |
| title_auth | High performance InP-based HEMTs with dry etched gate recess |
| title_exact_search | High performance InP-based HEMTs with dry etched gate recess |
| title_full | High performance InP-based HEMTs with dry etched gate recess presented by Halit C. Duran |
| title_fullStr | High performance InP-based HEMTs with dry etched gate recess presented by Halit C. Duran |
| title_full_unstemmed | High performance InP-based HEMTs with dry etched gate recess presented by Halit C. Duran |
| title_short | High performance InP-based HEMTs with dry etched gate recess |
| title_sort | high performance inp based hemts with dry etched gate recess |
| topic | HEMT (DE-588)4211873-6 gnd Ionenstrahlätzen (DE-588)4162299-6 gnd Indiumphosphid (DE-588)4161535-9 gnd |
| topic_facet | HEMT Ionenstrahlätzen Indiumphosphid Hochschulschrift |
| work_keys_str_mv | AT duranhalitc highperformanceinpbasedhemtswithdryetchedgaterecess |