Fundamentals of III-V devices: HBTs, MESFETs and HFETs/HEMTs
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York [u.a.]
Wiley
1999
|
| Schriftenreihe: | A Wiley interscience publication
|
| Schlagworte: | |
| Beschreibung: | XII, 505 S. Ill., graph. Darst. |
| ISBN: | 0471297003 |
Internformat
MARC
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| 100 | 1 | |a Liu, William |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Fundamentals of III-V devices |b HBTs, MESFETs and HFETs/HEMTs |c William Liu |
| 264 | 1 | |a New York [u.a.] |b Wiley |c 1999 | |
| 300 | |a XII, 505 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a A Wiley interscience publication | |
| 650 | 4 | |a Bipolar transistors | |
| 650 | 4 | |a Field-effect transistors | |
| 650 | 4 | |a Metal semiconductor field-effect transistors | |
| 650 | 4 | |a Modulation-doped field-effect transistors | |
| 650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Bipolartransistor |0 (DE-588)4145669-5 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |D s |
| 689 | 0 | 1 | |a Bipolartransistor |0 (DE-588)4145669-5 |D s |
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Datensatz im Suchindex
| _version_ | 1804127230936219648 |
|---|---|
| any_adam_object | |
| author | Liu, William |
| author_facet | Liu, William |
| author_role | aut |
| author_sort | Liu, William |
| author_variant | w l wl |
| building | Verbundindex |
| bvnumber | BV012580942 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.96.B55 |
| callnumber-search | TK7871.96.B55 |
| callnumber-sort | TK 47871.96 B55 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 3100 ZN 4870 |
| classification_tum | ELT 315f |
| ctrlnum | (OCoLC)39533971 (DE-599)BVBBV012580942 |
| dewey-full | 621.3815/28 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/28 |
| dewey-search | 621.3815/28 |
| dewey-sort | 3621.3815 228 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV012580942 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:30:03Z |
| institution | BVB |
| isbn | 0471297003 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008544213 |
| oclc_num | 39533971 |
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| owner | DE-355 DE-BY-UBR DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-355 DE-BY-UBR DE-91 DE-BY-TUM DE-83 |
| physical | XII, 505 S. Ill., graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| publisher | Wiley |
| record_format | marc |
| series2 | A Wiley interscience publication |
| spelling | Liu, William Verfasser aut Fundamentals of III-V devices HBTs, MESFETs and HFETs/HEMTs William Liu New York [u.a.] Wiley 1999 XII, 505 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier A Wiley interscience publication Bipolar transistors Field-effect transistors Metal semiconductor field-effect transistors Modulation-doped field-effect transistors Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Bipolartransistor (DE-588)4145669-5 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 s Bipolartransistor (DE-588)4145669-5 s DE-604 Drei-Fünf-Halbleiter (DE-588)4150649-2 s Halbleiterbauelement (DE-588)4113826-0 s |
| spellingShingle | Liu, William Fundamentals of III-V devices HBTs, MESFETs and HFETs/HEMTs Bipolar transistors Field-effect transistors Metal semiconductor field-effect transistors Modulation-doped field-effect transistors Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Bipolartransistor (DE-588)4145669-5 gnd |
| subject_GND | (DE-588)4150649-2 (DE-588)4131472-4 (DE-588)4113826-0 (DE-588)4145669-5 |
| title | Fundamentals of III-V devices HBTs, MESFETs and HFETs/HEMTs |
| title_auth | Fundamentals of III-V devices HBTs, MESFETs and HFETs/HEMTs |
| title_exact_search | Fundamentals of III-V devices HBTs, MESFETs and HFETs/HEMTs |
| title_full | Fundamentals of III-V devices HBTs, MESFETs and HFETs/HEMTs William Liu |
| title_fullStr | Fundamentals of III-V devices HBTs, MESFETs and HFETs/HEMTs William Liu |
| title_full_unstemmed | Fundamentals of III-V devices HBTs, MESFETs and HFETs/HEMTs William Liu |
| title_short | Fundamentals of III-V devices |
| title_sort | fundamentals of iii v devices hbts mesfets and hfets hemts |
| title_sub | HBTs, MESFETs and HFETs/HEMTs |
| topic | Bipolar transistors Field-effect transistors Metal semiconductor field-effect transistors Modulation-doped field-effect transistors Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Bipolartransistor (DE-588)4145669-5 gnd |
| topic_facet | Bipolar transistors Field-effect transistors Metal semiconductor field-effect transistors Modulation-doped field-effect transistors Drei-Fünf-Halbleiter Feldeffekttransistor Halbleiterbauelement Bipolartransistor |
| work_keys_str_mv | AT liuwilliam fundamentalsofiiivdeviceshbtsmesfetsandhfetshemts |