MTL circuits in standard high-speed bipolar processes:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
1999
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | VI, 120 S. graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV012579348 | ||
| 003 | DE-604 | ||
| 005 | 20150420 | ||
| 007 | t | ||
| 008 | 990527s1999 d||| m||| 00||| engod | ||
| 016 | 7 | |a 956357946 |2 DE-101 | |
| 035 | |a (OCoLC)245951354 | ||
| 035 | |a (DE-599)BVBBV012579348 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-29T |a DE-83 | ||
| 084 | |a ELT 315d |2 stub | ||
| 100 | 1 | |a Schmitt, Ralf |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a MTL circuits in standard high-speed bipolar processes |c vorgelegt von Ralf Schmitt |
| 264 | 1 | |c 1999 | |
| 300 | |a VI, 120 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Berlin, Techn. Univ., Diss., 1998 | ||
| 650 | 4 | |a Hochfrequenzschaltung - Integrierte Injektionslogik - Bipolartechnik - Prozessoptimierung | |
| 650 | 0 | 7 | |a Hochfrequenzschaltung |0 (DE-588)4160147-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Integrierte Injektionslogik |0 (DE-588)4161930-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Prozessoptimierung |0 (DE-588)4176074-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Bipolartechnik |0 (DE-588)4145668-3 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Hochfrequenzschaltung |0 (DE-588)4160147-6 |D s |
| 689 | 0 | 1 | |a Integrierte Injektionslogik |0 (DE-588)4161930-4 |D s |
| 689 | 0 | 2 | |a Bipolartechnik |0 (DE-588)4145668-3 |D s |
| 689 | 0 | 3 | |a Prozessoptimierung |0 (DE-588)4176074-8 |D s |
| 689 | 0 | |5 DE-604 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008542845&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-008542845 | |
Datensatz im Suchindex
| _version_ | 1807500878544896000 |
|---|---|
| adam_text |
1.
INTRODUCTION
.
1
1.1.
HISTORICAL
BACKGROUND
OF
MTL
DEVELOPMENT
.
2
2.
FUNDAMENTALS
OF
MTL
CIRCUITS
.
5
2.1.
BASIC
MTL
CIRCUIT
CONFIGURATION
.
5
2.2.
TERMINAL
ORIENTED
MODEL
OF
MTL
GATES
.
6
2.2.1.
CURRENT
GAIN
TERMINAL
PARAMETERS
.
7
2.2.1.1.
LATERAL
PNP
FORWARD
CURRENT
GAIN
.
7
2.2.1.2.
BACK-INJECTION
COEFFICIENT
.
8
2.2.1.3.
CURRENT
GAIN
IN
'
UP
'
-MODE
OPERATION
.
8
2.2.1.4.
CURRENT
GAIN
IN
'
DOWN
'
-MODE
OPERATION
.
9
2.2.2.
CAPACITANCE
AND
DIFFUSION
CHARGE
STORAGE
PARAMETERS
.
10
2.2.2.I.
TIME
CONSTANT
IN
'
UP
'
-MODE
OPERATION
.
10
2.2.2.2.
TIME
CONSTANT
IN
'
DOWN
'
-MODE
OPERATION
.
11
2.2.3.
DELAY
EQUATIONS
OF
MTL
CIRCUITS
.
11
2.2.3.1.
CURRENT-DELAY
PRODUCT
.
12
2.2.3.2.
INTRINSIC
DELAY
TIME
.
13
2.3.
STRUCTURE
ORIENTED
MODEL
OF
MTL
GATES
.
14
2.3.1.
ESTIMATE
OF
INJECTION
CURRENTS
.
15
2.3.2.
ESTIMATION
OF
DIFFUSION
CHARGE
STORAGE
.
17
3.
PROCESS
CHARACTERIZATION
OF
STANDARD
HIGH-SPEED
BIPOLAR
PROCESSES
.
21
3.1.
OVERVIEW
OF
TYPICAL
PROCESS
FLOW
.
21
3.2.
DEFINITION
OF
A
REFERENCE
PROCESS
.
23
3.3.
INJECTION
CURRENTS
AND
KNEE
VOLTAGES
IN
A
HIGH-SPEED
BIPOLAR
PROCESS
.
24
3.3.1.
COLLECTOR
CURRENT
DENSITY
OF
NPN
TRANSISTOR
.
25
3.3.2.
BASE
CURRENT
DENSITY
OF
NPN
TRANSISTOR
IN
'
UP
'
-MODE
OPERATION
.
25
3.3.2.1.
HOLE
CURRENT
DENSITY
INTO
EPITAXIAL
LAYER
.
26
3.3.2.2.
ELECTRON
CURRENT
DENSITY
INTO
EXTRINSIC
BASE
.
26
3.3.3.
BASE
CURRENT
DENSITY
OF
NPN
TRANSISTOR
IN
'
DOWN
'
-MODE
OPERATION
.
27
3.3.4.
LATERAL
CURRENT
INJECTIONS
.
28
3.3.4.1.
LATERAL
PNP
TRANSISTORS
.
28
3.3.4.2.
HOLE
INJECTION
TOWARDS
ISOLATION
.
30
3.4.
CHARGE
STORAGE
IN
A
HIGH-SPEED
BIPOLAR
PROCESS
.
30
3.4.1.
CAPACITANCE
BETWEEN
P-POLY
LAYER
AND
EPITAXIAL
LAYER
.
30
3.4.2.
CAPACITANCE
BETWEEN
TOP
N+LAYER
AND
INTRINSIC
BASE
.
31
3.4.3.
DIFFUSION
CHARGE
STORAGE
.
31
3.5.
INJECTION
MODEL
ELEMENTS
FOR
A
DOUBLE-POLY
PROCESS
.
31
3.5.1.
EXTRINSIC
BASE
SEGMENT
.
32
3.5.2.
INTRINSIC
NPN
TRANSISTOR
SEGMENT
.
33
3.5.3.
LATERAL
PNP
TRANSISTOR
SEGMENT
.
34
3.5.4.
COLLECTOR
CONTACT
SEGMENT
.
35
3.5.5.
ADDITIONAL
COMPONENTS
OF
THE
INJECTION
MODEL
.
36
4.
DESIGN
CONSIDERATIONS
AND
LAYOUT
REALIZATIONS
OF
MTL
GATES
.
37
4.1.
MULTI-COLLECTOR
NPN
TRANSISTOR
.
37
4.1.1.
CURRENT
GAIN
CONSIDERATIONS
.
37
4.1.2.
DELAY
TIME
CONSIDERATIONS
.
41
4.1.3.
VOLTAGE
DROPS
IN
THE
BASE
LAYER
.
42
4.1.4.
LAYOUT
OF
MULTI-COLLECTOR
NPN
TRANSISTORS
.
44
4.2.
LATERAL
INJECTION
BARRIERS
.
45
4.2.1.
N+INJECTION
BARRIER
.
45
4.2.2.
TRENCH
ISOLATION
.
47
4.3.
MTL
CURRENT
SOURCES
.
49
4.3.1.
IMPACT
OF
CURRENT
SOURCE
ON
CURRENT
GAIN
.
49
4.3.2.
LAYOUT
OF
LATERAL
PNP
CURRENT
SOURCES
.
52
4.3.3.
VERTICAL
PNP
CURRENT
SOURCES
.
53
4.4.
MTL
GATES
.
55
4.4.1.
MTL
GATES
WITH
INTEGRATED
INJECTOR
.
55
4.4.2.
MTL
GATES
WITH
ISOLATED
LATERAL
PNP
CURRENT
SOURCE
.
57
4.4.3.
MTL
GATES
WITH
VERTICAL
PNP
CURRENT
SOURCE
.
59
5.
PERFORMANCE
MODEL
OF
MTL
CIRCUITS
.
63
5.1.
TRADITIONAL
MODEL
OF
CURRENT-DELAY
RELATIONSHIP
.
63
5.2.
INTRINSIC
DELAY
TIME
OF
MTL
CIRCUITS
AT
HIGH-LEVEL
INJECTION
.
65
5.3.
PERFORMANCE
SIMULATIONS
OF
MTL
GATES
.
69
6.
PERFORMANCE
COMPARISONS
WITH
CML
AND
CMOS
SOLUTIONS
.
72
6.1.
PERFORMANCE
OF
MTL
GATES
WITH
OPTIMIZED
LAYOUT
.
72
6.2.
COMPARISON
OF
MTL
AND
CML
PERFORMANCE
.
73
6.2.1.
BASIC
PERFORMANCE
COMPARISON
.
73
6.2.2.
PERFORMANCE
OF
EMBEDDED
MTL
SOLUTIONS:
DEMONSTRATOR
CIRCUIT
'
DI
VIDE-BY-47
'
.
75
6.2.2.1.
CIRCUIT
DESCRIPTION
.
75
6.2.2.2.
COMPARISON
OF
MTL
AND
CML
CIRCUIT
REALIZATION
.
76
6.2.2.3.
CML
INTERFACE
FOR
EMBEDDED
MTL
SOLUTION
.
78
6.3.
PRINCIPLE
COMPARISON
OF
CML/MTL
AND
CML/CMOS
PERFORMANCE
.
80
6.3.1.
COMPARISON
OF
PROCESS
COMPLEXITY
.
82
6.3.2.
COMPARISON
OF
HIGH-SPEED
PERFORMANCE
.
82
6.3.3.
COMPARISON
OF
CIRCUIT
DENSITY
.
82
6.3.4.
COMPARISON
OF
POWER
DISSIPATION
.
83
6.3.5.
COMPARISON
SUMMARY
.
85
7.
MTL
PROCESS
MODULES
FOR
OPTIMIZED
CML/MTL
PROCESSES
.
87
7.1.
PERFORMANCE
LIMITING
PARAMETERS
OF
STANDARD
BIPOLAR
PROCESSES
.
87
7.2.
MTL
PROCESS
MODULES
TO
STANDARD
BIPOLAR
PROCESSES
.
88
7.2.1.
MTL
DESIGN
RULES
OPTIMIZATION
.
89
7.2.2.
INCREASED
DOPING
CONCENTRATION
OF
THE
EPITAXIAL
LAYER
.
91
7.2.3.
INCREASED
DOPING
CONCENTRATION
BELOW
FIELD
OXIDE
.
94
7.2.4.
IMPLANTED
COLLECTOR
IN
INTRINSIC
BASE
LAYER
.
97
7.2.5.
DOUBLE-DIFFUSED
MTL
MODULE
.
99
7.3.
SUMMARY
OF
PROCESS
IMPROVEMENTS
.
102
8.
SUMMARY
.
105
9.
ACKNOWLEDGEMENT
.
107
10.
REFERENCES
.
109
11.
APPENDIX
.
115
11.1.
INJECTION
CURRENTS
AND
DIFFUSION
CHARGE
STORAGE
UNDER
HIGH-LEVEL
INJECTION
CONDI
TIONS
.
115
IV
11.1.1.
BASE
REGION
OF
NPN
TRANSISTOR
.
115
11.1.1.1.
BASIC
CURRENT
EQUATIONS
.
115
11.1.1.2.
DIFFUSION
AND
DRIFT
CURRENT
CONTRIBUTIONS
.
116
11.1.1.3.
CURRENT
AND
DIFFUSION
CHARGE
ASYMPTOTES
AT
LOW
AND
HIGH-LEVEL
INJECTION
.
117
11.1.1.4.
HIGH-LEVEL
INJECTION
KNEE
VOLTAGES
.
118
11.1.2.
EPITAXIAL
LAYER
OF
NPN
TRANSISTOR
.
119
11.1.3.
GENERAL
CONCLUSIONS
FOR
CURRENT
AND
DIFFUSION
CHARGE
AT
HIGH-LEVEL
INJEC
TION
.
120 |
| any_adam_object | 1 |
| author | Schmitt, Ralf |
| author_facet | Schmitt, Ralf |
| author_role | aut |
| author_sort | Schmitt, Ralf |
| author_variant | r s rs |
| building | Verbundindex |
| bvnumber | BV012579348 |
| classification_tum | ELT 315d |
| ctrlnum | (OCoLC)245951354 (DE-599)BVBBV012579348 |
| discipline | Elektrotechnik |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV012579348 |
| illustrated | Illustrated |
| indexdate | 2024-08-16T00:12:44Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008542845 |
| oclc_num | 245951354 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-29T DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-29T DE-83 |
| physical | VI, 120 S. graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| record_format | marc |
| spelling | Schmitt, Ralf Verfasser aut MTL circuits in standard high-speed bipolar processes vorgelegt von Ralf Schmitt 1999 VI, 120 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Berlin, Techn. Univ., Diss., 1998 Hochfrequenzschaltung - Integrierte Injektionslogik - Bipolartechnik - Prozessoptimierung Hochfrequenzschaltung (DE-588)4160147-6 gnd rswk-swf Integrierte Injektionslogik (DE-588)4161930-4 gnd rswk-swf Prozessoptimierung (DE-588)4176074-8 gnd rswk-swf Bipolartechnik (DE-588)4145668-3 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Hochfrequenzschaltung (DE-588)4160147-6 s Integrierte Injektionslogik (DE-588)4161930-4 s Bipolartechnik (DE-588)4145668-3 s Prozessoptimierung (DE-588)4176074-8 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008542845&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Schmitt, Ralf MTL circuits in standard high-speed bipolar processes Hochfrequenzschaltung - Integrierte Injektionslogik - Bipolartechnik - Prozessoptimierung Hochfrequenzschaltung (DE-588)4160147-6 gnd Integrierte Injektionslogik (DE-588)4161930-4 gnd Prozessoptimierung (DE-588)4176074-8 gnd Bipolartechnik (DE-588)4145668-3 gnd |
| subject_GND | (DE-588)4160147-6 (DE-588)4161930-4 (DE-588)4176074-8 (DE-588)4145668-3 (DE-588)4113937-9 |
| title | MTL circuits in standard high-speed bipolar processes |
| title_auth | MTL circuits in standard high-speed bipolar processes |
| title_exact_search | MTL circuits in standard high-speed bipolar processes |
| title_full | MTL circuits in standard high-speed bipolar processes vorgelegt von Ralf Schmitt |
| title_fullStr | MTL circuits in standard high-speed bipolar processes vorgelegt von Ralf Schmitt |
| title_full_unstemmed | MTL circuits in standard high-speed bipolar processes vorgelegt von Ralf Schmitt |
| title_short | MTL circuits in standard high-speed bipolar processes |
| title_sort | mtl circuits in standard high speed bipolar processes |
| topic | Hochfrequenzschaltung - Integrierte Injektionslogik - Bipolartechnik - Prozessoptimierung Hochfrequenzschaltung (DE-588)4160147-6 gnd Integrierte Injektionslogik (DE-588)4161930-4 gnd Prozessoptimierung (DE-588)4176074-8 gnd Bipolartechnik (DE-588)4145668-3 gnd |
| topic_facet | Hochfrequenzschaltung - Integrierte Injektionslogik - Bipolartechnik - Prozessoptimierung Hochfrequenzschaltung Integrierte Injektionslogik Prozessoptimierung Bipolartechnik Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008542845&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT schmittralf mtlcircuitsinstandardhighspeedbipolarprocesses |