Selected papers revised from the proceedings of the Fourth International Symposium on Sputtering and Plasma Processes: (ISSP '97) ; Kanazawa, Japan, 4 - 6 June 1997
Gespeichert in:
Körperschaft: | |
---|---|
Format: | Tagungsbericht Buch |
Sprache: | English |
Veröffentlicht: |
Exeter
Pergamon
1998
|
Schriftenreihe: | Vacuum
51,4 |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | Einzelaufnahme eines Zeitschr.-H. |
Beschreibung: | S. 475 - 795 Ill., graph. Darst. |
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245 | 1 | 0 | |a Selected papers revised from the proceedings of the Fourth International Symposium on Sputtering and Plasma Processes |b (ISSP '97) ; Kanazawa, Japan, 4 - 6 June 1997 |c guest ed.: A. Kinbara ... |
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Datensatz im Suchindex
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adam_text | VACUUM
SURFACE ENGINEERING, SURFACE INSTRUMENTATION
&
VACUUM TECHNOLOGY
Volume 51/Number A/December
1998
Contents
AUTHORS
A Kinbara,
E
Kusano
and I Kondo
475
Τ
Ohta and
H Yamada
479
Τ
Nakano
and
S Baba
485
К
Obara,
Ρ
Yiji, Y Suemoto,
Τ
Ogushi
491
and
W
Möller
F
Heinrich,
D
Heinze,
Τ
Kowalski, 497
Ρ
Hoffmann and
Ρ
Kopperschmidt
Υ Η
Lee
ARTICLES
Fundamentals of plasma and sputtering processes
A sputter equipment simulation system for VLSI device
Simulation of particle transport in high pressure sputtering
A new technique for monitoring the microscopic electronic
surface structures of sputtered thin films
Multichannel process monitor for real-time film thickness and
rate measurements in dry etching and deposition
503
A role of energetic ions in RF-biased PECVD of TiO2
В
Humphreys,
M
Govett and A Goodyear
511
J H Ha, D H
Yi and
J J
Kim
519
Y
Song,
T
Sakurai,
К
Kishimoto,
525
К
Maruta,
S
Matsumoto and
К
Kikuchi
Y Mikawa,
R-i Miyano, J-i Inaguma,
531
Y Shiraki, F Mutsuga, M
Fujii
and
S Ikezawa
К
Sasaki,
H
Tomoda and
T
Takada
537
N
Matsushita,
К
Noma,
S Nakagawa
and
543
MNaoe
К
Tominaga,
T
Ao,
Y Sato, I
Mori,
K Kusaka and T Hanabusa
549
M Aoyama, T
Ito,
M Inoue and Y Shioya
555
K Kawamata, T Shouzu and N Mitamura
559
M Takeuchi, K Inoue, Y Yoshino and
565
K Ohwada
Y Kitamoto, M
Abe
and M Naoe
571
T Koyanagi, K Takao and Y Fukuma
575
T
Hata,
S
Nakano,
Y Masuda,
583
K
Sasaki,
Y Haneda and K
Wasa
The application of high density plasma sources for opto¬
electronic device fabrication
Reaction mechanism of trilevel resist etching in
02/SO2
plasma:
controlling factors for sidewall passivation
Syntheses and optical properties of low-temperature SiOx and
TiOx thin films prepared by plasma enhanced CVD
Control of Cl2 plasma by electron-beam-excited plasma and
poly-Si etching
Etching action by atomic hydrogen and low temperature
silicon epitaxial growth on ECR plasma CVD
Plasma diagnosis and low-substrate-temperature deposition
of Ba
ferrite
films in a damage-free sputtering apparatus with
mixed gases
Magnetic field dependence of
AIN
film properties in dc planar
magnetron sputtering with opposed targets
Shading damage in sputter cleaning using
Ar gas
plasma
K-M-S (keep-molecules sputtering) deposition of optical MgF2
thin films
Improvement of thickness distribution and crystallinity of
ZnO thin films prepared by radio frequency planar magnetron
sputtering
Compact sputtering apparatus for depositing Co-Cr alloy thin
films in magnetic disks
Effects of He on Cu film formation by rf sputtering
Heteroepitaxial growth of YSZ films on Si(IOO) substrate by
using new metallic mode of reactive sputtering
K Wasa.
Y Haneda,
T
Sato,
H Adachi
591
and K Setsune
S Nakagawa and M Naoe
595
Y Yoshino,
К
Inoue, M Takeuchi and
601
K Ohwada
S
Horită,
M Watanabe, S Umemoto and
609
A Masuda
S Iwamori,
T Miyashita,
S Fukuda,
615
S Nozaki,
К
Sudoh and
N
Fukuda
D
Noda,
T
Aoki, Y Nakanishi and
619
Y Hatanaka
J
Sheng,
L
Shivalingappa,
J
Karasawa
623
and T Fukami
Z
Iqbal, A
Rauf,
A Ali, A ul Haq and
629
A
Q
Khan
Crystal growth of
epitaxially
grown
PbTiO3
thin films on
miscut SrTiO3 substrate
Control of nano-structure of the initial growth layers of Co-Cr
thin films deposited by facing targets sputtering
Effects of interface micro structure in crystallization of ZnO
thin films prepared by radio frequency sputtering
Material properties of heteroepitaxial yttria-stabilized zirconia
films with controlled yttria contents on Si prepared by reactive
sputtering
Effect of an
interfacial
layer on adhesion strength deterioration
between a copper thin film and polyimide substrates
ZnTe epitaxial growth by remote plasma enhanced metal
organic chemical vapor deposition
Preparation and photocatalysis evaluation of anatase film on
Pt-buffered polyimide
Cathodic arc deposition of titanium nitride coatings on
commercial steels
C P Lungu,
M Futsuhara,
0
Takai,
635
M Braic and G Musa
W
D Sproul
641
B T
Sullivan,
J A Dobrowolski,
G
Clarke,
647
T Akiyama,
N Osborne, M
Ranger,
L
Howe,
A Matsumoto, Y Song and K Kikuchi
G Bräuer, M
Ruske,
J Szczyrbowski,
655
G Teschner and A Zmelty
K
Sasaki
W
X
Zhang and
T
Hata
661
T
Hata,
S Kawagoe,
W
Zhang,
К
Sasaki
665
and Y
Yoshioka
Y
Inoue,
M
Nomiya and
О
Takai
673
К
Sakaguchi,
S
Iwasa and
Y
Yoshino
677
S
Kadokura and
M Naoe
683
К
Noda,
T
Hirata,
T
Kawanabe and
687
M Naoe
S Q
Xiao,
К
Tsuzuki,
C P
Lungu and
691
О
Takai
H
Sek¡, Y Ueno,
S Ichimura, S Takemori,
695
S Uchikawa, H Murakamia, S Okada,
Y Mochizuki and
E Setoyama
К
Matsumoto,
T
Arai
and H
Tokunaga
699
L-L Lee,
D E Laughlin and D N
Lambeth
703
Y
Miyamoto,
К
Watanabe,
S
Nakagawa
711
and
M Naoe
T Ichihara, S
Nakagawa and
M Naoe
715
N
Horio,
M Hiramatsu, M Nawata,
719
К
Imaeda and
T
Torii
Noble gas influence on reactive radio frequency magnetron
sputter deposition of TiN films
High-rate reactive DC magnetron sputtering of oxide and nitride
superlattice coatings
Manufacture of complex optical multilayer filters using an
automated deposition system
Mid frequency sputtering with TwinMag®
-
a survey of recent
results
Origin of oxygen in Pb(Zr,Ti)O3 films prepared by metal-oxide
combined target
Proposal of new mixture target for PZT thin films by reactive
sputtering
Physical properties of reactive sputtered tin-nitride thin films
Reduction of residual stress for ZnO/AI thin films on glass
substrate prepared by radio frequency magnetron sputtering
Advanced sputtering techniques for high rate-, plasma free-
deposition and excellent target utility with uniform erosion
Novel facing targets sputtering apparatus with uniform
magnetic field and plasma-free substrates
Structure and properties of CeN thin films deposited in arc
discharge
Development of a locally-electron-heated plasma source for
HDP-CVD process
Uniform growth of compound-semiconductor film over
10
inch
circle by controlling entrance effects by diffusion mixing
between
3
layered flows
The effects of B2 structured underlayers on thin film magnetic
recording media
Effects of ¡on bombardment to interfaces on residual internal
stress and crystallite structures on multilayered films
Analysis of stray magnetic field at the substrate and effect of
applying external magnetic field in facing targets sputtering
Preparation of zinc oxide/metal oxide multilayered thin films
for low-voltage
varistore
G A Dixit
Y Tanaka,
Z
Xu,
Ρ
Gopalraja, J Forster,
G
Yao,
H
Zhang, J
Nulman and F
Chen
К
Noda,
T
Kawanabe,
T
Hirata and
MNaoe
YKuo
T
Aoki,
T
Ogishima, A M
Wróbel,
Y Nakanjshi
and Y Hatanaka
T
Takagi,
К
Takechi,
Y Nakagawa,
Y
Watabe and
S Nishida
M
Takeichi,
S
Takahashi,
H Kitahara
and
S L
Wright
К
Nakajima,
K-i
Onisawa,
K-i Chahara,
T Minemura,
M Kamei
and
E Setoyama
К
Okajima,
T
Sato,
T
Doni and
M Shibata
J
Jang,
J
I Ryu,
S Y Yoon and
Κ Η
Lee
YKuo
Τ
Serikawa and
S Shirai
E
Kusano,
N
Kashiwagi,
Τ
Kobayashi,
Η
Nanto, I Kondo and A Kinbara
Τ
Seino,
Y
Kawakubo,
К
Nakajima and
M Kamei
723
Advanced plasma processing techniques for metallization in
giga scale
technology
729
Sub quarter micron metallization using ionized
motal
plasm,]
(IMP) technology
735
Optimization of sputtering conditions for
proiectivi! carbon
thin films of rigid disks deposited by FTS
741
Plasma enhanced chemical vapor deposited silicon nitride .is a
gate dielectric film for amorphous silicon thin film transistors
a critical review
747
Silicon nitride film growth by remote plasma CVD using
Tris
(dimethylamino)silane
751
High rate deposition of a Si:H and a SiN,:H by VHF PECVD
757
Optimization of extrinsic TFT mobility on
550
mm
■ 650
mm
large glass
761
Stress reduction of chromium thin films deposited by cluster-
type sputtering system for ultra-large-size
(550 « 650
mm)
substrates
765
Two-step-etching process of MoW gate metal on large TFT
glass substrates
769
Low temperature polycrystalline silicon thin film transistors
777
Reactive ion etching of indium tin oxide by SiC^-based
plasmas
—
substrate temperature effect
781
Ultra-thin silicon-oxide films by sputter-deposition and their
application to high-quality poly-Si TFTS
785
Effects of
CH,,
addition to
Ar-O2
discharge gases on resistivity
and structure of
ITO
coatings
791
Uniformity improvement in dc magnetron sputtering deposition
on a large area substrate
For more information on Vacuum please visit our website which is
accessible via the
Elsevier
Surfaces
&
Interfaces Homepage at:
http://www elsevier.nl/locate/surfaces
ISSN 0042-207X
VACUAV
51(4) 475-814 (1998)
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id | DE-604.BV012514715 |
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institution_GND | (DE-588)5311765-7 |
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physical | S. 475 - 795 Ill., graph. Darst. |
publishDate | 1998 |
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publisher | Pergamon |
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spelling | International Symposium on Sputtering and Plasma Processes 4 1997 Kanazawa Verfasser (DE-588)5311765-7 aut Selected papers revised from the proceedings of the Fourth International Symposium on Sputtering and Plasma Processes (ISSP '97) ; Kanazawa, Japan, 4 - 6 June 1997 guest ed.: A. Kinbara ... Exeter Pergamon 1998 S. 475 - 795 Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Vacuum 51,4 Einzelaufnahme eines Zeitschr.-H. Sputtern (DE-588)4182614-0 gnd rswk-swf Plasmastrahlbearbeitung (DE-588)4136199-4 gnd rswk-swf Kanazawa (DE-588)4073191-1 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Sputtern (DE-588)4182614-0 s Kanazawa (DE-588)4073191-1 g DE-604 Plasmastrahlbearbeitung (DE-588)4136199-4 s Kinbara, Akira Sonstige oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008494825&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Selected papers revised from the proceedings of the Fourth International Symposium on Sputtering and Plasma Processes (ISSP '97) ; Kanazawa, Japan, 4 - 6 June 1997 Sputtern (DE-588)4182614-0 gnd Plasmastrahlbearbeitung (DE-588)4136199-4 gnd |
subject_GND | (DE-588)4182614-0 (DE-588)4136199-4 (DE-588)4073191-1 (DE-588)1071861417 |
title | Selected papers revised from the proceedings of the Fourth International Symposium on Sputtering and Plasma Processes (ISSP '97) ; Kanazawa, Japan, 4 - 6 June 1997 |
title_auth | Selected papers revised from the proceedings of the Fourth International Symposium on Sputtering and Plasma Processes (ISSP '97) ; Kanazawa, Japan, 4 - 6 June 1997 |
title_exact_search | Selected papers revised from the proceedings of the Fourth International Symposium on Sputtering and Plasma Processes (ISSP '97) ; Kanazawa, Japan, 4 - 6 June 1997 |
title_full | Selected papers revised from the proceedings of the Fourth International Symposium on Sputtering and Plasma Processes (ISSP '97) ; Kanazawa, Japan, 4 - 6 June 1997 guest ed.: A. Kinbara ... |
title_fullStr | Selected papers revised from the proceedings of the Fourth International Symposium on Sputtering and Plasma Processes (ISSP '97) ; Kanazawa, Japan, 4 - 6 June 1997 guest ed.: A. Kinbara ... |
title_full_unstemmed | Selected papers revised from the proceedings of the Fourth International Symposium on Sputtering and Plasma Processes (ISSP '97) ; Kanazawa, Japan, 4 - 6 June 1997 guest ed.: A. Kinbara ... |
title_short | Selected papers revised from the proceedings of the Fourth International Symposium on Sputtering and Plasma Processes |
title_sort | selected papers revised from the proceedings of the fourth international symposium on sputtering and plasma processes issp 97 kanazawa japan 4 6 june 1997 |
title_sub | (ISSP '97) ; Kanazawa, Japan, 4 - 6 June 1997 |
topic | Sputtern (DE-588)4182614-0 gnd Plasmastrahlbearbeitung (DE-588)4136199-4 gnd |
topic_facet | Sputtern Plasmastrahlbearbeitung Kanazawa Konferenzschrift |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008494825&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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