Infrared applications of semiconductors II: symposium held December 1 - 4, 1997, Boston, Massachusetts, USA
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Warrendale, Pa.
Materials Research Soc.
1998
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| Schriftenreihe: | Materials Research Society: Materials Research Society symposia proceedings
484 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XVII, 692 S. Ill., graph. Darst. |
| ISBN: | 1558993894 |
Internformat
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| 245 | 1 | 0 | |a Infrared applications of semiconductors II |b symposium held December 1 - 4, 1997, Boston, Massachusetts, USA |c ed.: Donald L. McDaniel ... |
| 264 | 1 | |a Warrendale, Pa. |b Materials Research Soc. |c 1998 | |
| 300 | |a XVII, 692 S. |b Ill., graph. Darst. | ||
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| 490 | 1 | |a Materials Research Society: Materials Research Society symposia proceedings |v 484 | |
| 650 | 4 | |a Infrared technology |x Materials |v Congresses | |
| 650 | 4 | |a Quantum wells |v Congresses | |
| 650 | 4 | |a Semiconductor lasers |v Congresses | |
| 650 | 4 | |a Semiconductors |v Congresses | |
| 650 | 4 | |a Superlattices as materials |v Congresses | |
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Datensatz im Suchindex
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| adam_text | MATERIALS RESEARCH SOCIETY SYMPOSRIM PROCEEDINGS VOLUME 484 INFRARED
APPLICATIONS OF SEMICONDUCTORS * SYMPOSIUM HELD DECEMBER 1-4,1997,
BOSTON, MASSACHUSETTS, U.S.A. EDITORS: DONALD L. MCDANIEL, JR. AIR FORCE
RESEARCH LABORATORY KIRTLAND AFB, NEW MEXICO, U.S.A. AND UNIVERSITY OF
NEW MEXICO ALBUQUERQUE, NEW MEXICO, U.S.A. M. OMAR MANASREH AIR FORCE
RESEARCH LABORATORY KIRTLAND AFB, NEW MEXICO, U.S.A. RICHARD H. MILES
SDL, INC. SAN JOSE, CALIFORNIA, U.S.A. SIVALINGAM SIVANANTHAN UNIVERSITY
OF ILLINOIS AT CHICAGO CHICAGO, ILLINOIS, U.S.A. MM MATERIALS RESEARCH
SOCIETY WARRENDALE, PENNSYLVANIA CONTENTS PREFACE XV ACKNOWLEDGMENTS
XVII MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS XVIII PARTI:
ANTIMONIDE RELATED MATERIALS - GROWTH. CHARACTERIZATION. AND ANALYSIS
MATERIALS FOR MID-IR SEMICONDUCTOR LASERS 3 A.R. KOST THE GROWTH OF
TYPE-LL IR LASER STRUCTURES 11 M.J. YANG, W.J. MOORE, B.R. BENNETT, B.V.
SHANABROOK, AND J.O. CROSS NONDESTRUCTIVE AND WHOLE WAFER
CHARACTERIZATION OF LLL-V IR EPITAXIAL MATERIALS PREPARED BY TURBO DISK
METALORGANIC CHEMICAL VAPOR DEPOSITION 13 Z.C. FENG, M. PELCZYNSKI, C.
BECKHAM, P. COOKE, I. FERGUSON, AND R.A. STALL *RECENT PROGRESS IN THE
GROWTH OF MID-IR EMITTERS BY METALORGANIC CHEMICAL VAPOR DEPOSITION 19
R.M. BIEFELD, A.A. ALLERMAN, S.R. KURTZ, AND K.C. BAUCOM ***
INVESTIGATION OF AI0.5 GAO.5 ASI- Y SB Y BUFFER-LAYER SYSTEMS 31 E.
CHEN, J.S. AHEARN, K. RIICHOIS, P. UPPAL, AND D.C. PAINE SUBSTRATE
MISORIENTATION EFFECTS ON EPITAXIAL GALNASSB 37 C.A. WANG, U.K. CHOI,
D.C. OAKLEY, AND O.W. CHARACHE BRIDGMAN GROWTH AND CHARACTERIZATION OF
BULK SINGLE CRYSTALS OF GAI- X LN X SB FOR THERMOPHOTOVOLTAIC
APPLICATIONS 45 J.R. BOY ER AND W.T. HAINES PHOTOREFLECTANCE STUDY OF
MBE-GROWN TE-DOPED GASB AT THE EO + ** TRANSITION 57 S. IYER, S.
MULUGETA, J. LI, B. MANGALAM, S. VENKATRAMAN, AND K.K. BAJAJ SURFACE AND
INTERFACE PROPERTIES OF INSB EPITAXIAL THIN FILMS GROWN ON GAAS BY
LOW-PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION 63 K. LI, K.L. TAN,
M. PELCZYNSKI, Z.C. FENG, A.T.S. WEE, J.Y. LIN, I. FERGUSON, AND R.A.
STALL *LNVITED PAPER V PART II: ANTIMONIDE RELATED DEVICES THEORETICAL
PERFORMANCE OF MID-IR BROKEN-GAP MULTILAYER SUPERLATTICE LASERS 71
MICHAEL E. PLATTE, J.*. OLESBERG, AND C.H. DREIN AUGER RECOMBINATION IN
ANTIMONY-BASED, STRAIN-BALANCED, NARROW-BANDGAP SUPERLATTICES 83 J.T.
OLESBERG, THOMAS F. BOGGESS, S.A. ANSON, D-J. JANG, M.E. PLATTE, T.C.
TIASENBERG, AND C.H. QREIN HIGH-POWER MID-IR INTERBAND CASCADE LASERS 89
B.TI. YANG, D. ZHANG, RUI Q. YANG, C-TI. LIN, S.J. MURRY, H. WU, AND
S.S. FEI MID-IR VERTICAL-CAVITY SURFACE-EMITTING LASERS 95 /.
VURGAFTMAN, W.W. BEWLEY, CL. FELIX, E.H. AIFER, J.R. MEYER, L. GOLDBERG,
D.H. CHOW, AND E. SELVIG 3.2 AND 3.8 ** EMISSION AND LASING IN
AIGAASSB/LNGAASSB DOUBLE HETEROSTRUCTURES WITH ASYMMETRIC BAND OFFSET
CONFINEMENTS 101 M.P. MIKHAILOVA, B.E. ZHURTANOV, /F.D. MOISEEV, A.N.
IMENKOV, O.G. ERSHOV, AND YU.F. YAKOVLEV *HIGH-POWER, LOW-THRESHOLD,
OPTICALLY PUMPED TYPE-LL QUANTUM-WELL LASERS 107 CHIH-HSIANG LIN, S.J.
MURRY, RUI Q. YANG, S.S. FEI, H.Q. LE, CHI YAN, D.M. QIANARDI, JR., D.L.
MCDANIEL, JR., AND M. FALCON MODELING OF MID-IR MULTIQUANTUM-WELL LASERS
117 A.D. ANDREEV TUNNELING EFFECTS IN INAS/GALNSB SUPERLATTICE IR
PHOTODIODES 123 U. WEIMAR, F. FUCHS, E. AHLSWEDE, J. SCHMITZ, W.
FLETSCHEN, *. HERRES, AND M. WALTHER MID-IR PHOTODETECTORS BASED ON
INAS/LNGASB TYPE-LL QUANTUM WELLS 129 G.J. BROWN, M. AHOUJJA, F.
SZMULOWICZ, W.C. MITCHEI, AND C.H. LIN PROGRESS ON GALNASSB AND INASSBP
PHOTODETECTORS FOR MID-IR WAVELENGTHS 135 Z.A. SHELLENBARGER, M.Q. MAUK,
P.E. SIMS, J.A. COX, J.D. LESKO, J.R. BOWER, J.D. SOUTH, AND L.C.
DINETTA PART III: INNOVATIVE IR DEVICES NONEQUILIBRIUM INSB/LNAISB
DIODES GROWN BY MBE 143 A.D. JOHNSON, A.B.J. SMOUT, J. W. CAIRNS, Q.J.
PRYCE, A.J. PIDDUCK, R. JEFFERIES, T. ASHLEY, AND C.T. ELLIOTT POSITIVE
AND NEGATIVE LUMINESCENT IR SOURCES AND THEIR APPLICATIONS 153 T. ASHLEY
INVITED PAPER VI GAAS/AIGAAS INTERSUBBAND MID-IR EMITTER 165 O.
STRASSER, S. QIANORDOLI, L. TIVOZDARA, H. BICHL, K. UNTERRAINER, E.
OORNIK, P. KRUCK, M. HELM, AND J.M. HEYMAN NOVEL PIEZOELECTRIC
HETEROSTRUCTURE FOR ALL-OPTICAL IR LIGHT MODULATION 171 V. ORTIZ, N.T.
PELEKANOS, AND GUIDO MUIA MULTIVALENT ACCEPTOR-DOPED GERMANIUM LASERS: A
SOLID-STATE TUNABLE SOURCE FROM 75 TO 300 ** 177 D.R. CHAMBERLIN, O.D.
DUBON, E. BRUENDERMANN, E.E. HALLER, L.A. REICHERTZ, G. SIRMAIN, A.M.
LINHART, AND TI.P. ROSER BAND-REJECT IR METALLIC PHOTONIC BANDGAP
FILTERS ON FLEXIBLE POLYIMIDE SUBSTRATE 183 SANDHYA GUPTA, GARY TUTTLE,
MIHAIL SIGALAS, AND KAI-MING HO PART IV: IR DETECTORS HIGH-TEMPERATURE
IR PHOTON DETECTOR PERFORMANCE 191 C.TI. QREIN AND H. EHRENREICH FREE
CARRIER ABSORPTION IN P-TYPE EPITAXIAL SI AND GAAS FILMS FOR FAR-IR
DETECTION 199 A.G.U. PERERA, W.Z. SHEN, *.*. TANNER, K.L. WANG, AND W.
SCHAFF MONOLITHICALLY INTEGRATED DUAL-BAND QUANTUM-WELL IR PHOTODETECTOR
205 D.K. SENGUPTA, S.D. GUNAPAIA, S.V. BANDARA, F. POOL, J.K. LIU, 14.
MCKELVEY, E. LUONG, J. TOREZAN, J. MUMULO, W. HONG, J. GILL, O.E.
STIILMAN, A.P. CURTIS, S. KIM, L.J. CHOU, P.J. MARES, M. FENG, K.C.
HSEIH, S.L. CHUANG, S.G. BISHOP, Y.C. CHANG, H.C. LIU, AND W.I. WANG
GERMANIUM FAR-IR BLOCKED IMPURITY BAND DETECTORS 215 CS. OLSEN, J.W.
BEEMAN, W.L. HANSEN, AND E.E. HALLER HGCDTE*AN UNEXPECTEDLY GOOD CHOICE
FOR (NEAR) ROOM- TEMPERATURE FOCAL PLANE ARRAYS 221 W.E. TENNANT AND *
CABETLI BANDGAP ENGINEERING OF HGCDTE FOR TWO-COLOR IR DETECTOR ARRAYS
BY MOVPE 233 P. MITRA, F.C. CASE, S.L. BARNES, M.B. REINE, P. O DETTE,
AND S.P. TOBIN INFLUENCE OF STRUCTURAL DEFECTS AND ZINC COMPOSITION
VARIATION ON THE DEVICE RESPONSE OF CDI- X ZN X TE RADIATION DETECTORS
241 H. YOON, J.M. VAN SCYOC, T.S. GILBERT, M.S. GOORSKY, B.A. BRUENETT,
J.C. LUND, H. HERMON, M. SCHIEBER, AND R.B. JAMES ANALYSIS OF GRAIN
BOUNDARIES, TWIN BOUNDARIES, AND * * PRECIPITATES IN CDI-X ZN X TE GROWN
BY HIGH-PRESSURE BRIDGMAN METHOD 247 J.R. HEFFELFINGER, D.L. MEDLIN, AND
R.B. JAMES *LNVITED PAPER VII MAPPING OF LARGE-AREA CADMIUM ZINC
TELLURIDE (CZT) WAFERS: APPARATUS AND METHODS 253 B.A. BRUENETT, J.M. VAN
SCYOC, H. YOON, T.S. GILBERT, *.*. SCHLESINGER, J.C. LUND, AND R.B.
JAMES RECENT IMPROVEMENTS IN DRY ETCHING OF HGI_ X CD X TE BY CH 4 -
BASED ELECTRON-CYCLOTRON-RESONANCE PLASMAS 259 M. SEELMANN-EGGEBERT, A.
RAR, H. ZIMMERMANN, AND P. MEISEN MODULAR 64 X 64 CDZNTE ARRAYS WITH
MULTIPLEXER READOUT FOR HIGH-RESOLUTION NUCLEAR MEDICINE IMAGING 267
J.M. WOOLFENDEN, LI.B. BARBER, H.H. BARRETT, E.L. DERENIAK, J.D. ESKIN,
D.O. MARKS, K.J. MATHERSON, E.T. YOUNG, AND F.L. AUGUSTINE PERFORMANCE
OF P-I-N CDZNTE RADIATION DETECTORS AND THEIR UNIQUE ADVANTAGES 273 R.
SUDHARSANAN, C.C STENSTROM, P. BENNETT, AND O.D. VAKERLIS FABRICATION OF
CDZNTE STRIP DETECTORS FOR LARGE-AREA ARRAYS 285 CM. STAHLE, Z.Q. SHI,
*. **, S.D. BARTHELMY, S.J. SNODGRASS, S.J. LEHTONEN, K.J. MACH, L.
BARBIER, *. QEHRELS, J.F. KRIZMANIC, D. PALMER, A.M. PARSONS, AND P. SHU
MAPPING DETECTOR RESPONSE OVER THE AREA OF A CDZNTE- MULTIPLE-ELECTRODE
DETECTOR 291 CL. LINGREN, B. APOTOVSKY, J.F. BUTLER, F.P. DOTY, S.J.
FRIESENHAHN, A. OGANESYAN, B. PI, AND S. ZHAO NEW TYPE OF IR
PHOTODETECTORS BASED ON LEAD TELLURIDE AND RELATED ALLOYS 295 D.R.
KHOKHLOV PBTE(GA) - NEW MULTISPECTRAL IR PHOTODETECTOR 301 A.I.
BELOGOROKHOV, I.I. IVANCHIK, AND D.R. KHOKHLOV PARTV: GROWTH AND DOPING
OF II-VI MATERIALS CURRENT ISSUES OF HIGH-PRESSURE BRIDGMAN GROWTH OF
SEMI-INSULATING CDZNTE 309 CSABA SZELES AND ELGIN E. EISSLER IMPROVED
CDZNTE DETECTORS GROWN BY VERTICAL BRIDGMAN PROCESS 319 K.Q. LYNN, M.
WEBER, H.L. GLASS, J.P. FLINT, AND CS. SZELES THE REDUCTION OF THE
DEFECT DENSITY IN CDTE BUFFER LAYERS FOR THE GROWTH OF HGCDTE IR
PHOTODIODES ON SI(211) SUBSTRATES 329 H-Y. WEI, L. SALAMANCA-RIBA, AND
*.*. DHAR CONTROL OF DEFECTS AND IMPURITIES IN PRODUCTION OF CDZNTE
CRYSTALS BY THE BRIDGMAN METHOD 335 H.L. GLASS, A.J. SOCHA, D.W. BAKKEN,
V.M. SPEZIALE, AND J.P. FLINT INVITED PAPER VIII DOPANTS IN HGCDTE 341
*.*. BERDING AND A. SHER STUDY ON DEEP-LEVEL TRAPS IN P-HGCDTE WITH
DLTFS 347 S. KAWATA, I. SUGIYAMA, N. KAJIHARA, AND Y. MIYAMOTO REACTIVE
ION ETCHING (RIE)-LNDUCED P- TO N-TYPE CONVERSION IN EXTRINSICALLY-DOPED
P-TYPE HGCDTE 353 C.A. MUSCA, E.P.G. SMITH, J.F. SILIQUINI, J.M. DELL,
J. ANTOSZEWSKI, J. PIOTROWSKI, AND L. FARAONE DX-LIKE CENTERS AND
PHOTOCONDUCTIVITY KINETICS IN PBTE- BASED ALLOYS 359 B.A. AKIMOV, V.A.
BOGOYAVLENSKIY, V.N. VASIL KOV, AND L.I. RYABOVA RAMAN AND
PHOTOLUMINESCENCE STUDIES ON INTRINSIC AND CR-DOPED ZNSE SINGLE CRYSTALS
365 BRAJESH K. KAI, S. BHASKAR, TL.D. BIST, RS. KATIYAR, K-T. CHEN, AND
A. BURGER GROWTH AND CHARACTERIZATION OF PBSE AND PBI_ X SN X SE LAYERS
ON SI(100) 371 H.K. SACHAR, I. CHAO, X.M. FANG, AND P.J. MCCANN IN SIFU
SPECTROSCOPIC ELLIPSOMETRY FOR REAL-TIME COMPOSITION CONTROL OF HGI-X CD
X TE GROWN BY MOLECULAR-BEAM EPITAXY 377 R. DAT, F. AQARIDEN, W.M.
DUNCAN, D. CHANDRA, AND TL.D. SHIH NONMONOTONOUS BEHAVIOR OF TEMPERATURE
DEPENDENCE OF PLASMA FREQUENCY AND EFFECT OF A LOCAL INSTABILITY OF THE
PBTE:LN,GA LATTICE 383 A.I. BEIOGOROKHOV, L.I. BELOGOROKHOVA, AND D.R.
KHOKHLOV X-RAY CHARACTERIZATION OF PBTE/SNTE SUPERLATTICES 389 S.O.
FERREIRA, E. ABRAMOF, P.TL.O. RAPPL, A.Y. UETA, FT. CLOSS, * BOSCHETTI,
P. MOTISUKE, AND I.N. BANDEIRA PART VI: INTERDIFFUSION IN QUANTUM-WELL
MATERIALS AND IR APPLICATIONS *QUANTUM-WELL INTERMIXING FOR
OPTOELECTRONIC APPLICATIONS 397 C. JAGADISH, H.H. TAN, S. YUAN, AND M.
QAL THE EFFECT OF TENSILE STRAIN ON AIGAAS/GAASP INTERDIFFUSED
QUANTUM-WELL LASER 413 FT.S. CHAN AND MICHAEL C.Y. CHAN REDUCED AL-GA
INTERDIFFUSION IN GAAS/ALGAAS MULTIPLE- QUANTUM-WELL STRUCTURE BY
INTRODUCING LOW HYDROGEN CONTENT SIN X CAPPING LAYER FOR DIELECTRIC CAP
QUANTUM- WELL DISORDERING 419 VI.J. CHOI, S.M. HAN, S.I. SHAH, S.O.
CHOI, D.H. WOO, S. LEE, H.J. KIM, I.K. HAN, S.H. KIM, J.I. LEE, K.N.
KANG, AND J. CHO INVITED PAPER IX THEORY OF CRITICAL LAYER THICKNESS OF
NONCONSTANT QUANTUM- WELL WIDTH PRODUCED BY INTERDIFFUSION AND ITS
OPTOELECTRONICS CONSEQUENCE 425 MICHAEL C.Y. CHAN AND E. HERBERT LI
ACTIVE ANTIGUIDE VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH DIFFUSED
QUANTUM-WELLS STRUCTURE 431 S.F. YU, E. HERBERT LI, AND W.M. MAN
MODELING INTERDIFFUSION IN SUPERLATTICE STRUCTURES 437 RICHARD Q. QASS
AND HOWARD E. JACKSON CATION INTERDIFFUSION IN GALNP/GAAS SINGLE QUANTUM
WELLS 441 JOSEPH MICALLEF, ANDREA BRINCAT, AND WAI-CHEE SHIU
INTERDIFFUSION MECHANISMS IN GAAS/AIGAAS QUANTUM-WELL HETEROSTRUCTURES
INDUCED BY SI02 CAPPING AND ANNEALING 447 A. PEPIN, * VIEU, M.
SCHNEIDER, H. LAUNOIS, AND E. V.U. RAO DISORDER-DELINEATED AIGAAS/GAAS
QUANTUM- WELL PHASE MODULATOR 453 W.C.H. CHOYANDB.L. WEISS THERMAL
INTERDIFFUSION IN INGAAS/GAAS STRAINED MULTIPLE- QUANTUM-WELL IR
PHOTODETECTOR 459 ALEX S. W. LEE, E. HERBERT LI, AND QAMANI KARUNASIRI
ANALYSIS OF AIGAAS/GAAS MULTIPLE-QUANTUM-WELL DUAL WAVEGUIDES DEFINED BY
ION IMPLANTATION-INDUCED INTERMIXING 467 TIAI-MING LO PART VII:
NONLINEAR OPTICAL AND OPO MATERIALS *SECOND-HARMONIC AND SUM-FREQUENCY
GENERATION IN CDGEAS2 475 EIKO TANAKA AND KIYOSHI KATO LOW OPTICAL LOSS
WAFER-BONDED GAAS STRUCTURES FOR QUASI- PHASE-MATCHED SECOND-HARMONIC
GENERATION 481 YEWCHUNG SERMON WU, ROBERT S. EEIGELSON, ROGER K. ROUTE,
DONG ZHENG, LESLIE A. GORDON, MARTIN M. FEJER, AND ROBERT L. BYER
PHASE-MATCHED SECOND-HARMONIC GENERATION IN ASYMMETRIC DOUBLE QUANTUM
WELLS 487 TI.L. VODOPYANOV, C.C. PHILLIPS, I. VURGAFTMAN, AND J.R. MEYER
DARK SOLITON FORMATION FOR LIGHT-INDUCED WAVEGUIDING IN PHOTOREFRACTIVE
LNP:FE 491 M. CHAUVET, S.A. HAWKINS, Q.J. SALAMO, M. SEGEV, D.F. BLISS,
AND Q. BRYANT *ZNGEP2 AND ITS RELATION TO OTHER DEFECT SEMICONDUCTORS
495 A.W. VERE, L.L. TAYLOR, P.C. SMITH, C.J. FLYNN, M.TI. SAKER, AND J.
JONES GROWTH OF NLO CHALCOPYRITE MATERIALS BY OMVPE 507 M.L. TIMMONS AND
K.J. BACHMANN X LASER DAMAGE STUDIES OF SILVER GALLIUM SULFIDE SINGLE
CRYSTALS 519 WARREN RUDERMAN, JOHN MAFFETONE, DAVID E. ZELMAN, AND
DERRICK M. POIRIER ATOMISTIC CALCULATIONS OF DOPANT BINDING ENERGIES IN
ZNGEP 2 525 RAVINDRA PANDEY, MELVIN C. OHMER, A. COSTALES, AND J.M. REDO
PHOTORESPONSE STUDIES OF THE POLARIZATION DEPENDENCE OF THE CDGEAS 2
BAND EDGE 531 O.J. BROWN, M.C. OHMER, AND P.O. SCHUNEMANN REFRACTIVE
INDEX MEASUREMENTS OF BARIUM TITANATE FROM .4 TO 5.0 MICRONS AND
IMPLICATIONS FOR PERIODICALLY POLED FREQUENCY CONVERSION DEVICES 537
DAVID E. ZELMON, DAVID L. SMALL, AND PETER SCHUNEMANN POLARIZED RAMAN
SCATTERING STUDY OF ZNGEP2 SINGLE CRYSTALS 543 SPIRIT TIAII, HOWARD E.
JACKSON, M.C. OHMER, P.O. SCHUNEMANN, AND T.M. POLLAK ELECTRON-NUCLEAR
DOUBLE RESONANCE STUDY OF THE ZINC VACANCY IN ZINC GERMANIUM PHOSPHIDE
(ZNGEP2 549 K.T. STEVENS, S.D. SETZLER, L.E. HALLIBURTON, *.*.
FERNELIUS, P.O. SCHUNEMANN, AND T.M. POLLAK INFLUENCE OF QUANTUN
CONFINEMENT ON THE PHOTOEMISSION FROM NONLINEAR OPTICAL MATERIALS 555
KAMAKHYA P. QHATAK, P.K. BOSE, AND OAUTAM MAJUMDER EXTRA-WIDE TUNING
RANGE MID-IR OPTICAL PARAMETRIC GENERATOR PUMPED BY ER-LASER PULSES 561
K.L. VODOPYANOV OPERATIONAL CHARACTERISTICS OF GASE CRYSTALS FOR MID-IR
AND FAR-IR APPLICATIONS 567 N.C. FERNELIUS, F.K. HOPKINS, *.*. SINGH, D.
SUHRE, M. MARABLE, R.H. HOPKINS, R. MEYER, AND P. MUI FREQUENCY DOUBLING
OF CW AND PULSED CO2 LASERS USING DIFFUSION-BONDED, QUASI-PHASE-MATCHED
GAAS STACKS 573 MELVIN * OHMER, SHEKHAR QUHA, RONALD E. PERRIN, LAURA S.
REA, PHIL WON YU, AND AYUB FATHIMULLA CHARACTERIZATION OF CDGEAS2 USING
CAPACITANCE METHODS 581 S.R. SMITH, A.O. EVWARAYE, AND M.C. OHMER PART
VIII: RELATED CONTRIBUTIONS CHEMICAL BONDING ON GAAS(OOL) SURFACES
PASSIVATED USING SES 2 589 JINGXI SUN, DONG JU SEO, W.L. OBRIEN, F.J.
HIMPSEL, AND T.F. KUECH ER-RELATED EMISSION IN IMPURITIES (NITROGEN,
OXYGEN) IMPLANTED AI0.7 GA 0 .3 AS 595 S. UEKUSA, M. WAKUTANI, M. SAITO,
AND M. KUMAGAI XI PHOTOACOUSTIC STUDY OF THE EFFECT OF 0.9 EV LIGHT
ILLUMINATION IN SEMI-INSULATING GAAS 601 ATSUHIKO FUKUYAMA, YOSHITO
AKASHI, KENJI YOSHINO, KOUJI MAEDA, AND TETSUO IKARI PHOTO-ASSISTED
RESONANT TUNNELING THROUGH LOCALIZED STATES IN ALAS/GAAS DOUBLE-BARRIER
STRUCTURE WITH UNDOPED SPACER LAYERS 607 TI.Y. CHU, K-S. LEE, TI-TL.
PARK, AND E-TI. LEE OXYGEN-RELATED DEFECTS IN LNO.5(AL X GAI. X )O.5 P
GROWN BY MOVPE 611 J.Q. CEDERBERG, B. BIEG, J-W. HUANG, S.A. STOCKMAN,
M.J. PEANASKY, AND T.F. KUECH DISLOCATIONS AND TRAPS IN MBE-GROWN
LATTICE-MISMATCHED P-LNGAAS/GAAS LAYERS ON GAAS SUBSTRATES 617 A.Y. DU,
M.F. LI, T.C. CHONG, AND Z. ZHANG STUDY OF THE HOMOGENEITY OF FE-DOPED
SEMI-INSULATING INP WAFERS 625 J. JIMENEZ, R. FORNARI, M. CURTI, E. DE
LA PUENTE, M. AVELLA, L.F. SANZ, M.A. GONZALEZ, AND A. ALVAREZ RELAXED
LN X GAI- X AS GRADED BUFFERS GROWN WITH ORGANOMETALLIC VAPOR-PHASE
EPITAXY ON GAAS 631 M.T. BULSARA, * LEITZ, AND E.A. FITZGERALD Y-RAY
IRRADIATION EFFECT ON THE INTERSUBBAND TRANSITION IN INGAAS/AIGAAS
MULTIPLE QUANTUM WELLS 637 M.O. MANASREH, J.R. CHAVEZ, W.T. KEMP, K.
MOENSHEL, AND M. MISSOUS 1.95 ** COMPRESSIVELY STRAINED INGAAS/LNGAASP
QUANTUM- WELL DFB LASER WITH LOW THRESHOLD 643 JIE DONG, AKINORI
UBUKATA.AND KOH MATSUMOTO MONOLITHIC 1.55 ** SURFACE-EMITTING LASER
STRUCTURE WITH LNO.53ALO.14 GAO.33 AS/LNO.52 ALO.48 AS DISTRIBUTED BRAGG
REFLECTOR AND SINGLE CAVITY ACTIVE LAYER GROWN BY METALORGANIC-
CHEMICAL-VAPOR-DEPOSITION METHOD 649 J-H. BAEK, B. LEE, W.S. MAN, J.M.
SMITH, B.S. JEONG, AND E-TI. LEE EFFECT OF GEOMETRIC FACTORS ON
POLARIZATION PROPERTIES OF VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH
TILTED PILLAR STRUCTURES 655 MIN SOO PARK, BYUNG TAE AHN, TLYE YONG CHU,
BYUENG-SU YOO, AND HYO-TIOON PARK HIGH-RESOLUTION X-RAY REFLECTOMETRY
AND DIFFRACTION OF CAF2/SI(L 11) STRUCTURES GROWN BY MOLECULAR-BEAM
EPITAXY 661 E. ABRAMOF, S.O. FERREIRA, P.TI.O. RAPPI, A.Y. UETA, *
BOSCHETTI, H. CIOSS, P. MOTISUKE, AND 1.*. BANDEIRA OPTICAL ABSORPTION
IN HGI . X CD X TE 667 VAIDYA NATHAN XII THE BURSTEIN-MOSS SHIFT IN
QUANTUM DOTS OF LLL-V, LL-VI, AND IV-VI SEMICONDUCTORS UNDER PARALLEL
MAGNETIC FIELD 673 KAMAKHYA P. OHATAK, P.K. BOSE, AND OAUTAM MAJUMDER ON
THE MOSS-BURSTEIN SHIFT IN QUANTUM CONFINED OPTOELECTRONIC TERNARY AND
QUATERNARY MATERIALS 679 KAMAKHYA P. OHATAK, P.K. BOSE, AND OAUTAM
MAJUMDER AUTHOR INDEX 685 SUBJECT INDEX 689 XIII
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV012509764 |
| callnumber-first | T - Technology |
| callnumber-label | TA1570 |
| callnumber-raw | TA1570 |
| callnumber-search | TA1570 |
| callnumber-sort | TA 41570 |
| callnumber-subject | TA - General and Civil Engineering |
| classification_rvk | UP 3150 |
| ctrlnum | (OCoLC)38527750 (DE-599)BVBBV012509764 |
| dewey-full | 621.36/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.36/2 |
| dewey-search | 621.36/2 |
| dewey-sort | 3621.36 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1997 Boston Mass. gnd-content |
| genre_facet | Konferenzschrift 1997 Boston Mass. |
| id | DE-604.BV012509764 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:28:48Z |
| institution | BVB |
| isbn | 1558993894 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008490561 |
| oclc_num | 38527750 |
| open_access_boolean | |
| owner | DE-703 |
| owner_facet | DE-703 |
| physical | XVII, 692 S. Ill., graph. Darst. |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | Infrared applications of semiconductors II symposium held December 1 - 4, 1997, Boston, Massachusetts, USA ed.: Donald L. McDaniel ... Warrendale, Pa. Materials Research Soc. 1998 XVII, 692 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 484 Infrared technology Materials Congresses Quantum wells Congresses Semiconductor lasers Congresses Semiconductors Congresses Superlattices as materials Congresses Halbleiter (DE-588)4022993-2 gnd rswk-swf Infrarottechnik (DE-588)4026942-5 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1997 Boston Mass. gnd-content Halbleiter (DE-588)4022993-2 s Infrarottechnik (DE-588)4026942-5 s DE-604 MacDaniel, Donald L. Sonstige oth Materials Research Society: Materials Research Society symposia proceedings 484 (DE-604)BV001899105 484 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008490561&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Infrared applications of semiconductors II symposium held December 1 - 4, 1997, Boston, Massachusetts, USA Materials Research Society: Materials Research Society symposia proceedings Infrared technology Materials Congresses Quantum wells Congresses Semiconductor lasers Congresses Semiconductors Congresses Superlattices as materials Congresses Halbleiter (DE-588)4022993-2 gnd Infrarottechnik (DE-588)4026942-5 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4026942-5 (DE-588)1071861417 |
| title | Infrared applications of semiconductors II symposium held December 1 - 4, 1997, Boston, Massachusetts, USA |
| title_auth | Infrared applications of semiconductors II symposium held December 1 - 4, 1997, Boston, Massachusetts, USA |
| title_exact_search | Infrared applications of semiconductors II symposium held December 1 - 4, 1997, Boston, Massachusetts, USA |
| title_full | Infrared applications of semiconductors II symposium held December 1 - 4, 1997, Boston, Massachusetts, USA ed.: Donald L. McDaniel ... |
| title_fullStr | Infrared applications of semiconductors II symposium held December 1 - 4, 1997, Boston, Massachusetts, USA ed.: Donald L. McDaniel ... |
| title_full_unstemmed | Infrared applications of semiconductors II symposium held December 1 - 4, 1997, Boston, Massachusetts, USA ed.: Donald L. McDaniel ... |
| title_short | Infrared applications of semiconductors II |
| title_sort | infrared applications of semiconductors ii symposium held december 1 4 1997 boston massachusetts usa |
| title_sub | symposium held December 1 - 4, 1997, Boston, Massachusetts, USA |
| topic | Infrared technology Materials Congresses Quantum wells Congresses Semiconductor lasers Congresses Semiconductors Congresses Superlattices as materials Congresses Halbleiter (DE-588)4022993-2 gnd Infrarottechnik (DE-588)4026942-5 gnd |
| topic_facet | Infrared technology Materials Congresses Quantum wells Congresses Semiconductor lasers Congresses Semiconductors Congresses Superlattices as materials Congresses Halbleiter Infrarottechnik Konferenzschrift 1997 Boston Mass. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008490561&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT macdanieldonaldl infraredapplicationsofsemiconductorsiisymposiumhelddecember141997bostonmassachusettsusa |