High energy boron implantation into different silicon substrates:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | German |
| Veröffentlicht: |
München
Walter-Schottky-Inst.
1998
|
| Ausgabe: | 1. Aufl. |
| Schriftenreihe: | Selected topics of semiconductor physics and technology
19 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | VIII, 158 S. Ill., graph. Darst. |
| ISBN: | 3932749197 |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV012469860 | ||
| 003 | DE-604 | ||
| 005 | 20020312 | ||
| 007 | t | ||
| 008 | 990316s1998 gw ad|| m||| 00||| ger d | ||
| 016 | 7 | |a 955879256 |2 DE-101 | |
| 020 | |a 3932749197 |c kart. |9 3-932749-19-7 | ||
| 035 | |a (OCoLC)76014283 | ||
| 035 | |a (DE-599)BVBBV012469860 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a ger | |
| 044 | |a gw |c DE | ||
| 049 | |a DE-12 |a DE-91 |a DE-634 | ||
| 084 | |a PHY 690d |2 stub | ||
| 084 | |a ELT 293d |2 stub | ||
| 084 | |a PHY 696d |2 stub | ||
| 100 | 1 | |a Pech, Reiner |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a High energy boron implantation into different silicon substrates |c Reiner Pech. Walter-Schottky-Institut, Technische Universität München |
| 246 | 1 | 3 | |a High-energy boron-implantation into different silicon substrates |
| 250 | |a 1. Aufl. | ||
| 264 | 1 | |a München |b Walter-Schottky-Inst. |c 1998 | |
| 300 | |a VIII, 158 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Selected topics of semiconductor physics and technology |v 19 | |
| 502 | |a Zugl.: München, Techn. Univ., Diss., 1998 | ||
| 650 | 0 | 7 | |a Megaelektronenvoltbereich |0 (DE-588)4457495-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Implantation |0 (DE-588)4026660-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Bor |0 (DE-588)4007709-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumhalbleiter |0 (DE-588)4274465-9 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Siliciumhalbleiter |0 (DE-588)4274465-9 |D s |
| 689 | 0 | 1 | |a Bor |0 (DE-588)4007709-3 |D s |
| 689 | 0 | 2 | |a Implantation |0 (DE-588)4026660-6 |D s |
| 689 | 0 | 3 | |a Megaelektronenvoltbereich |0 (DE-588)4457495-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 830 | 0 | |a Selected topics of semiconductor physics and technology |v 19 |w (DE-604)BV011499438 |9 19 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008462456&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-008462456 | |
Datensatz im Suchindex
| _version_ | 1807501000702951424 |
|---|---|
| adam_text |
CONTENTS
.
I
SUMMARY
.
HI
ZUSAMMENFASSUNG
.
VI
1
INTRODUCTION
.
1
1.1
MOTIVATION
.
1
1.2
PREVIEW
OF
CHAPTERS
.
3
2
THEORETICAL
BACKGROUND
OF
ION
IMPLANTATION
.4
2.1
RANGE
OF
IONS
IN
SOLIDS
.
4
2.1.1
NUCLEAR
STOPPING
.
8
2.1.2
ELECTRONIC
STOPPING
.
9
2.1.3
RANGE
DISTRIBUTION
OF
IONS
.
10
2.2
RADIATION
DAMAGE
IN
SOLIDS
.
12
2.2.1
STRUCTURE
AND
ANNEALING
OF
RADIATION
DAMAGE
.
12
2.2.2
NUMBER
OF
DISPLACED
ATOMS
.
15
2.2.3
RANGE
DISTRIBUTION
OF
RADIATION
DAMAGE
.
16
2.2.4
FORMATION
OF
AMORPHOUS
LAYERS
.
18
3
EXPERIMENTAL
APPROACH
.
20
3.1
SAMPLE
PREPARATION
.
22
3.1.1
VARIOUS
SILICON
WAFERS
AND
THEIR
PROPERTIES
.
22
3.1.2
HIGH-ENERGY
BORON
IMPLANTATION
.
29
3.1.3
POST-DAMAGE
ANNEALING
.
30
3.2
CHARACTERISATION
TECHNIQUES
.
32
3.2.1
TRANSMISSION
ELECTRON
MICROSCOPY
(TEM)
.
32
3.2.2
PREFERENTIALLY
CHEMICAL
ETCHING
.
33
3.2.3
MINORITY
CARRIER
GENERATION
LIFETIME
(MOS
T
)
.
36
3.2.4
GATE
OXIDE
INTEGRITY
(GOI)
.
39
4
IMPLANTATION
INDUCED
CRYSTAL
DEFECTS
.
43
4.1
INFLUENCE
OF
IMPLANT
PARAMETERS
.
43
4.1.1
IMPLANT
DOSE
.
45
4.1.2
IMPLANT
ENERGY
.
63
4.2
INFLUENCE
OF
THE
STARTING
SUBSTRATE
.
67
4.2.1
DISSOLVED
OXYGEN
AND
DENUDED
ZONE
FORMATION
.
71
4.2.1.1
DISLOCATION
PINNING
EFFECT
BY
OXYGEN
.
72
4.2.1.2
OXYGEN
PILEUP
IN
THE
R
P
-REGION
.
76
4.2.2
PRECIPITATED
OXYGEN
AND
INTERNAL
GETTERING
.
.
.
84
4.3
INFLUENCE
OF
SUBSEQUENT
WET
THERMAL
OXIDATION
.
88
4.3.1
GROWTH
OF
OXIDATION
INDUCED
STACKING
FAULTS
(OISF
'
S)
.
88
4.3.2
INFLUENCE
OF
IMPLANT
AND
SUBSTRATE
PARAMETERS
.
91
4.3.3
IMPLANT
DEFECTS
AS
NUCLEATION
SITES
FOR
OISF
'
S
.
96
5
ELECTRICAL
PROPERTIES
.
102
5.1
MINORITY
CARRIER
GENERATION
LIFETIME
.
102
5.1.1
PHYSICAL
BACKGROUND
.
103
5.1.2
INFLUENCE
OF
IMPLANT
AND
SUBSTRATE
PARAMETERS
.
109
5.1.3
INFLUENCE
OF
IMPLANT
DEFECTS
.
114
5.2
GATE
OXIDE
INTEGRITY
.
117
5.2.1
PHYSICAL
BACKGROUND
.
117
5.2.2
INFLUENCE
OF
IMPLANT
AND
SUBSTRATE
PARAMETERS
.
123
5.2.2.1
DEFECT-RELATED
OXIDE
BREAKDOWN
(A
AND
B
MODE)
.
127
5.2.2.2
INTRINSIC
OXIDE
BREAKDOWN
(C
MODE)
.
129
5.2.3
IMPACT
OF
IMPLANT
DEFECTS
ON
INTRINSIC
BREAKDOWN
.
132
6
CONCLUSIONS
AND
OUTLOOK
.
136
APPENDIX:
DESIGN
OF
EXPERIMENTS
BY
G.
TAGUCHI
.
139
AL
INFLUENCE
OF
SUBSTRATE
PARAMETERS
ON
CRYSTAL
DEFECTS
.
143
A2
INFLUENCE
OF
SUBSTRATE
PARAMETERS
ON
OISF
'
S
.
144
A3
INFLUENCE
OF
SUBSTRATE
PARAMETERS
ON
LIFETIME
.
145
A4
INFLUENCE
OF
SUBSTRATE
PARAMETERS
ON
GOI
.
146
REFERENCES
.
147
ACKNOWLEDGEMENTS
.
157 |
| any_adam_object | 1 |
| author | Pech, Reiner |
| author_facet | Pech, Reiner |
| author_role | aut |
| author_sort | Pech, Reiner |
| author_variant | r p rp |
| building | Verbundindex |
| bvnumber | BV012469860 |
| classification_tum | PHY 690d ELT 293d PHY 696d |
| ctrlnum | (OCoLC)76014283 (DE-599)BVBBV012469860 |
| discipline | Physik Elektrotechnik |
| edition | 1. Aufl. |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 cb4500</leader><controlfield tag="001">BV012469860</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20020312</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">990316s1998 gw ad|| m||| 00||| ger d</controlfield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">955879256</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3932749197</subfield><subfield code="c">kart.</subfield><subfield code="9">3-932749-19-7</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)76014283</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV012469860</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">ger</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-12</subfield><subfield code="a">DE-91</subfield><subfield code="a">DE-634</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 690d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 293d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 696d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Pech, Reiner</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">High energy boron implantation into different silicon substrates</subfield><subfield code="c">Reiner Pech. Walter-Schottky-Institut, Technische Universität München</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">High-energy boron-implantation into different silicon substrates</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1. Aufl.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">München</subfield><subfield code="b">Walter-Schottky-Inst.</subfield><subfield code="c">1998</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">VIII, 158 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Selected topics of semiconductor physics and technology</subfield><subfield code="v">19</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: München, Techn. Univ., Diss., 1998</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Megaelektronenvoltbereich</subfield><subfield code="0">(DE-588)4457495-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Implantation</subfield><subfield code="0">(DE-588)4026660-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Bor</subfield><subfield code="0">(DE-588)4007709-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumhalbleiter</subfield><subfield code="0">(DE-588)4274465-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Siliciumhalbleiter</subfield><subfield code="0">(DE-588)4274465-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Bor</subfield><subfield code="0">(DE-588)4007709-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Implantation</subfield><subfield code="0">(DE-588)4026660-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Megaelektronenvoltbereich</subfield><subfield code="0">(DE-588)4457495-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Selected topics of semiconductor physics and technology</subfield><subfield code="v">19</subfield><subfield code="w">(DE-604)BV011499438</subfield><subfield code="9">19</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008462456&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-008462456</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV012469860 |
| illustrated | Illustrated |
| indexdate | 2024-08-16T00:14:39Z |
| institution | BVB |
| isbn | 3932749197 |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008462456 |
| oclc_num | 76014283 |
| open_access_boolean | |
| owner | DE-12 DE-91 DE-BY-TUM DE-634 |
| owner_facet | DE-12 DE-91 DE-BY-TUM DE-634 |
| physical | VIII, 158 S. Ill., graph. Darst. |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| publisher | Walter-Schottky-Inst. |
| record_format | marc |
| series | Selected topics of semiconductor physics and technology |
| series2 | Selected topics of semiconductor physics and technology |
| spelling | Pech, Reiner Verfasser aut High energy boron implantation into different silicon substrates Reiner Pech. Walter-Schottky-Institut, Technische Universität München High-energy boron-implantation into different silicon substrates 1. Aufl. München Walter-Schottky-Inst. 1998 VIII, 158 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Selected topics of semiconductor physics and technology 19 Zugl.: München, Techn. Univ., Diss., 1998 Megaelektronenvoltbereich (DE-588)4457495-2 gnd rswk-swf Implantation (DE-588)4026660-6 gnd rswk-swf Bor (DE-588)4007709-3 gnd rswk-swf Siliciumhalbleiter (DE-588)4274465-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Siliciumhalbleiter (DE-588)4274465-9 s Bor (DE-588)4007709-3 s Implantation (DE-588)4026660-6 s Megaelektronenvoltbereich (DE-588)4457495-2 s DE-604 Selected topics of semiconductor physics and technology 19 (DE-604)BV011499438 19 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008462456&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Pech, Reiner High energy boron implantation into different silicon substrates Selected topics of semiconductor physics and technology Megaelektronenvoltbereich (DE-588)4457495-2 gnd Implantation (DE-588)4026660-6 gnd Bor (DE-588)4007709-3 gnd Siliciumhalbleiter (DE-588)4274465-9 gnd |
| subject_GND | (DE-588)4457495-2 (DE-588)4026660-6 (DE-588)4007709-3 (DE-588)4274465-9 (DE-588)4113937-9 |
| title | High energy boron implantation into different silicon substrates |
| title_alt | High-energy boron-implantation into different silicon substrates |
| title_auth | High energy boron implantation into different silicon substrates |
| title_exact_search | High energy boron implantation into different silicon substrates |
| title_full | High energy boron implantation into different silicon substrates Reiner Pech. Walter-Schottky-Institut, Technische Universität München |
| title_fullStr | High energy boron implantation into different silicon substrates Reiner Pech. Walter-Schottky-Institut, Technische Universität München |
| title_full_unstemmed | High energy boron implantation into different silicon substrates Reiner Pech. Walter-Schottky-Institut, Technische Universität München |
| title_short | High energy boron implantation into different silicon substrates |
| title_sort | high energy boron implantation into different silicon substrates |
| topic | Megaelektronenvoltbereich (DE-588)4457495-2 gnd Implantation (DE-588)4026660-6 gnd Bor (DE-588)4007709-3 gnd Siliciumhalbleiter (DE-588)4274465-9 gnd |
| topic_facet | Megaelektronenvoltbereich Implantation Bor Siliciumhalbleiter Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008462456&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV011499438 |
| work_keys_str_mv | AT pechreiner highenergyboronimplantationintodifferentsiliconsubstrates |