Etching in microsystem technology:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English German |
| Veröffentlicht: |
Weinheim [u.a.]
Wiley-VCH
1999
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XVI, 368 S. Ill., graph. Darst. |
| ISBN: | 3527295615 |
Internformat
MARC
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| 084 | |a TEC 025f |2 stub | ||
| 100 | 1 | |a Köhler, Michael |e Verfasser |4 aut | |
| 240 | 1 | 0 | |a Ätzverfahren für die Mikrotechnik |
| 245 | 1 | 0 | |a Etching in microsystem technology |c Michael Köhler |
| 264 | 1 | |a Weinheim [u.a.] |b Wiley-VCH |c 1999 | |
| 300 | |a XVI, 368 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 7 | |a Gravure par plasma |2 ram | |
| 650 | 7 | |a Masques (électronique) |2 ram | |
| 650 | 7 | |a Microlithographie |2 ram | |
| 650 | 0 | 7 | |a Mikrosystemtechnik |0 (DE-588)4221617-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ätzen |0 (DE-588)4000648-7 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Mikrosystemtechnik |0 (DE-588)4221617-5 |D s |
| 689 | 0 | 1 | |a Ätzen |0 (DE-588)4000648-7 |D s |
| 689 | 0 | |5 DE-604 | |
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| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-008461763 | |
Datensatz im Suchindex
| _version_ | 1807683520194150400 |
|---|---|
| adam_text |
CONTENTS
PREFACE
.
V
TABLE
OF
CONTENTS
.
VII
SYMBOLS
.
XI
ABBREVIATIONS
.
XV
1
INTRODUCTION
.
1
2
DISTINCTIVE
FEATURES
OF
MICROTECHNICAL
ETCHING
.
4
2.1
ETCHING
AS
A
FASHIONING
METHOD
.
4
2.1.1
LIMITS
OF
ADDITIVE
MICROTECHNICAL
PATTERN
GENERATION
.
6
2.1.2
SUBTRACTIVE
PATTERN
GENERATION
.
6
2.2
ETCH
RATE
AND
SELECTIVITY
.
9
2.2.1
ETCH
RATE
AND
TIME
REQUEST
.
9
2.2.2
THE
ETCHING
PROCESS
.
9
2.2.3
TRANSPORT
PROCESSES
.
10
2.2.4
PROCESS
VELOCITIES
.
11
2.3.
ISOTROPIC
AND
ANISOTROPIC
ETCHING
.
14
2.4
EDGE
GEOMETRY
AND
ROUGHNESS
.
18
2.4.1
DEVIATIONS
FROM
IDEAL
GEOMETRY
.
18
2.4.2
EDGE
GEOMETRY
IN
ISOTROPIC
ETCHING
.
18
2.4.3
FABRICATION
OF
LOW
SLOPE
ANGLES
BY
ISOTROPIC
ETCHING
.
19
2.4.4
EDGE
GEOMETRIES
IN
ANISOTROPIC
ETCHING
.
21
2.4.5
FABRICATION
OF
LOW
SLOPE
ANGLES
BY
PARTIALLY
ANISOTROPIC
ETCHING
.
23
2.5
ACCURACY
.
24
2.6
MONITORING
OF
ETCHING
PROCESSES
.
26
VIII
CONTENTS
3
WET-CHEMICAL
ETCHING
METHODS
.
29
3.1
ETCHING
AT
THE
INTERFACE
SOLID-LIQUID
.
29
3.2
PREPARATION
OF
THE
SURFACE
.
30
3.2.1
SURFACE
CONDITION
.
30
3.2.2
CLEANING
.
32
3.2.3
DIGITAL
ETCHING
.
34
3.3
ETCHING
OF
DIELECTRIC
MATERIALS
.
35
3.3.1
WET
ETCHING
BY
PHYSICAL
DISSOLUTION
.
35
3.3.2
WET-CHEMICAL
ETCHING
OF
NON-METALS
.
37
3.4
ETCHING
OF
METALS
AND
SEMICONDUCTORS
.
41
3.4.1
OUTER-CURRENTLESS
ETCHING
.
41
3.4.2
SELECTIVITY
IN
OUTER-CURRENTLESS
ETCHING
.
53
3.4.3
ETCHING
OF
MULTILAYER
SYSTEMS
FORMING
LOCAL
ELEMENTS
.
60
3.4.4
GEOMETRY-DEPENDENT
ETCH
RATES
.
62
3.4.5
GEOMETRY-DEPENDENT
PASSIVATION
.
69
3.4.6
ELECTROCHEMICAL
ETCHING
.
72
3.4.7
PHOTOCHEMICAL
WET
ETCHING
.
79
3.4.8
PHOTOELECTROCHEMICAL
ETCHING
.
80
3.5
CRYSTALLOGRAPHIC
ETCHING
.
84
3.5.1
CHEMICAL
WET
ETCHING
OF
MONOCRYSTALLINE
SURFACES
.
84
3.5.2
ANISOTROPIC
ETCHING
OF
MONOCRYSTALLINE
METALS
.
87
3.5.3
ANISOTROPIC
ETCHING
OF
SILICON
.
88
3.5.4
ANISOTROPIC
ELECTROCHEMICAL
AND
PHOTOELECTROCHEMICAL
ETCHING
.
98
3.5.5
POROUS
SILICON
.
100
3.5.6
ANISOTROPIC
ETCHING
OF
COMPOUND
SEMICONDUCTORS
.
103
3.6
PREPARATION
OF
FREE-STANDING
MICROPATTEMS
.
105
3.6.1
SURFACE
MICROMACHINING
.
105
3.6.2
BULK
MICROMACHINING
.
107
3.6.3
POROUS
SILICON
AS
SACRIFICIAL
MATERIAL
.
109
4
DRY-ETCHING
METHODS
.
ILL
4.1
REMOVAL
AT
THE
INTERFACE
SOLID-GAS
.
ILL
4.2
PLASMA-FREE
ETCHING
IN
THE
GAS
PHASE
.
116
4.2.1
PLASMA-FREE
DRY
ETCHING
WITH
REACTIVE
GASES
.
116
4.2.2
PHOTO-ASSISTED
DRY
ETCHING
WITH
REACTIVE
GASES
.
118
4.2.3
DIRECTLY-WRITING
MICROPATTEMING
BY
LASER
SCANNING
ETCHING
.
.
.
119
4.2.4
ELECTRON-BEAM-ASSISTED
VAPOUR
ETCHING
.
120
4.3
PLASMA
ETCHING
METHODS
.
122
4.3.1
MATERIAL
REMOVAL
BY
REACTIONS
WITH
PLASMA
SPECIES
.
122
CONTENTS
IX
4.3.2
PLASMA
GENERATION
.
125
4.3.3
PLASMA
ETCHING
IN
THE
BARREL
REACTOR
.
127
4.3.4
PLASMA
ETCHING
IN
THE
DOWN-STREAM
REACTOR
.
128
4.3.5
PLASMA
ETCHING
IN
THE
PLANAR-PLATE
REACTOR
.
129
4.3.6
MAGNETIC-FIELD-BIASSED
PLASMA
ETCHING
.
130
4.3.7
PLASMA
ETCHING
AT
LOW
PRESSURE
AND
HIGH
ION
DENSITY
.
130
4.3.8
FORMING
OF
ETCH
STRUCTURES
IN
PLASMA
ETCHING
.
131
4.3.9
GEOMETRY
INFLUENCE
ON
PLASMA
ETCHING
.
131
4.3.10
PLASMA
JET
ETCHING
(PJE)
.
133
4.3.11
APPLICATIONS
OF
PLASMA
ETCHING
.
133
4.4
ETCHIG
METHODS
WITH
ENERGIZED
PARTICLES
.
137
4.4.1
SPUTTER-ETCHING
.
137
4.4.2
REACTIVE
ION
ETCHING
(RIE)
.
144
4.4.3
MAGNETIC-FIELD-ENHANCED
REACTIVE
ION
ETCHING
(MERIE)
.
150
4.4.4
ION
BEAM
ETCHING
(IBE)
.
150
4.4.5
REACTIVE
ION
BEAM
ETCHING
(RIBE)
.
155
4.4.6
MAGNETIC-FIELD-ENHANCED
REACTIVE
ION
BEAM
ETCHING
(MERIBE)
.
156
4.4.7
CHEMICALLY-ASSISTED
ION
BEAM
ETCHING
(CAIBE)
.
156
4.4.8
REACTIVE
ETCHING
WITH
EXCITATION
FROM
SEVERAL
SOURCES
.
156
4.4.9
ELECTRON-BEAM-SUPPORTED
REACTIVE
ION
ETCHING
(EBRE)
.
157
4.4.10
FOCUSSED
ION
BEAM
ETCHING
(FIB)
.
159
4.4.11
NANOPARTICLE
BEAM
ETCHING
(NPBE)
.
160
4.4.12
FORMATION
OF
THE
STRUCTURE
SIDEWALL
GEOMETRY
IN
ION
BEAM
ETCHING
.
161
4.4.13
MATERIAL
DEFECTS
IN
ETCHING
WITH
ENERGIZED
PARTICLES
.
168
4.4.14
APPLICATION
OF
ETCHING
METHODS
WITH
ENERGIZED
PARTICLES
.
169
5
MICROFORMING
BY
ETCHING
OF
LOCALLY
CHANGED
MATERIAL
.
173
5.1
PRINCIPLE
OF
FORMING
BY
LOCALLY
CHANGED
MATERIAL
.
173
5.2
INORGANIC
RESISTS
.
173
5.3
ETCHING
OF
PHOTOSENSITIVE
GLASSES
.
174
5.4
ETCHING
OF
PHOTO-DAMAGED
AREAS
.
175
5.5
ETCHING
OF
AREAS
DAMAGED
BY
ION
BEAMS
.
176
5.6
PARTICLE
TRACE
ETCHING
.
176
6
CHOSEN
RECIPES
.
179
6.1
EXPLAINING
THE
COLLECTION
OF
RECIPES
.
179
X
CONTENTS
6.2
COLLECTION
OF
RECIPES
.
181
REFERENCES
.
345
INDEX
.
361 |
| any_adam_object | 1 |
| author | Köhler, Michael |
| author_facet | Köhler, Michael |
| author_role | aut |
| author_sort | Köhler, Michael |
| author_variant | m k mk |
| building | Verbundindex |
| bvnumber | BV012468177 |
| classification_rvk | ZM 7660 ZN 3750 ZN 4980 |
| classification_tum | ELT 285f TEC 025f |
| ctrlnum | (OCoLC)632902315 (DE-599)BVBBV012468177 |
| dewey-full | 537.5 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.5 |
| dewey-search | 537.5 |
| dewey-sort | 3537.5 |
| dewey-tens | 530 - Physics |
| discipline | Physik Technik Elektrotechnik Werkstoffwissenschaften / Fertigungstechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV012468177 |
| illustrated | Illustrated |
| indexdate | 2024-08-18T00:35:42Z |
| institution | BVB |
| isbn | 3527295615 |
| language | English German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008461763 |
| oclc_num | 632902315 |
| open_access_boolean | |
| owner | DE-92 DE-898 DE-BY-UBR DE-91G DE-BY-TUM DE-522 DE-634 DE-355 DE-BY-UBR |
| owner_facet | DE-92 DE-898 DE-BY-UBR DE-91G DE-BY-TUM DE-522 DE-634 DE-355 DE-BY-UBR |
| physical | XVI, 368 S. Ill., graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| publisher | Wiley-VCH |
| record_format | marc |
| spelling | Köhler, Michael Verfasser aut Ätzverfahren für die Mikrotechnik Etching in microsystem technology Michael Köhler Weinheim [u.a.] Wiley-VCH 1999 XVI, 368 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Gravure par plasma ram Masques (électronique) ram Microlithographie ram Mikrosystemtechnik (DE-588)4221617-5 gnd rswk-swf Ätzen (DE-588)4000648-7 gnd rswk-swf Mikrosystemtechnik (DE-588)4221617-5 s Ätzen (DE-588)4000648-7 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008461763&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Köhler, Michael Etching in microsystem technology Gravure par plasma ram Masques (électronique) ram Microlithographie ram Mikrosystemtechnik (DE-588)4221617-5 gnd Ätzen (DE-588)4000648-7 gnd |
| subject_GND | (DE-588)4221617-5 (DE-588)4000648-7 |
| title | Etching in microsystem technology |
| title_alt | Ätzverfahren für die Mikrotechnik |
| title_auth | Etching in microsystem technology |
| title_exact_search | Etching in microsystem technology |
| title_full | Etching in microsystem technology Michael Köhler |
| title_fullStr | Etching in microsystem technology Michael Köhler |
| title_full_unstemmed | Etching in microsystem technology Michael Köhler |
| title_short | Etching in microsystem technology |
| title_sort | etching in microsystem technology |
| topic | Gravure par plasma ram Masques (électronique) ram Microlithographie ram Mikrosystemtechnik (DE-588)4221617-5 gnd Ätzen (DE-588)4000648-7 gnd |
| topic_facet | Gravure par plasma Masques (électronique) Microlithographie Mikrosystemtechnik Ätzen |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008461763&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT kohlermichael atzverfahrenfurdiemikrotechnik AT kohlermichael etchinginmicrosystemtechnology |