Semiconductor device physics and simulation:
Gespeichert in:
Hauptverfasser: | , |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
New York [u.a.]
Plenum Press
1998
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Schriftenreihe: | Microdevices
|
Schlagworte: | |
Beschreibung: | XII, 336 S. Ill., zahlr. graph. Darst. |
ISBN: | 0306457245 |
Internformat
MARC
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035 | |a (DE-599)BVBBV012416744 | ||
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050 | 0 | |a TK7871.85 | |
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100 | 1 | |a Yuan, Jiann S. |e Verfasser |4 aut | |
245 | 1 | 0 | |a Semiconductor device physics and simulation |c J. S. Yuan and J. J. Liou |
264 | 1 | |a New York [u.a.] |b Plenum Press |c 1998 | |
300 | |a XII, 336 S. |b Ill., zahlr. graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 0 | |a Microdevices | |
650 | 7 | |a Semiconducteurs - Simulation par ordinateur |2 ram | |
650 | 7 | |a Transistors à jonctions - Simulation par ordinateur |2 ram | |
650 | 4 | |a Junction transistors |x Computer simulation | |
650 | 4 | |a Semiconductors |x Computer simulation | |
650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a pn-Übergang |0 (DE-588)4174949-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Numerisches Verfahren |0 (DE-588)4128130-5 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
689 | 0 | 1 | |a pn-Übergang |0 (DE-588)4174949-2 |D s |
689 | 0 | 2 | |a Numerisches Verfahren |0 (DE-588)4128130-5 |D s |
689 | 0 | |5 DE-604 | |
700 | 1 | |a Liou, Juin J. |e Verfasser |4 aut | |
943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-008424674 |
Datensatz im Suchindex
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adam_text | |
any_adam_object | |
author | Yuan, Jiann S. Liou, Juin J. |
author_facet | Yuan, Jiann S. Liou, Juin J. |
author_role | aut aut |
author_sort | Yuan, Jiann S. |
author_variant | j s y js jsy j j l jj jjl |
building | Verbundindex |
bvnumber | BV012416744 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.85 |
callnumber-search | TK7871.85 |
callnumber-sort | TK 47871.85 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | UP 3200 |
ctrlnum | (OCoLC)245812364 (DE-599)BVBBV012416744 |
dewey-full | 621.3815/2/0113 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/2/0113 |
dewey-search | 621.3815/2/0113 |
dewey-sort | 3621.3815 12 3113 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
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id | DE-604.BV012416744 |
illustrated | Illustrated |
indexdate | 2024-09-06T00:13:22Z |
institution | BVB |
isbn | 0306457245 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008424674 |
oclc_num | 245812364 |
open_access_boolean | |
owner | DE-703 DE-1050 DE-634 |
owner_facet | DE-703 DE-1050 DE-634 |
physical | XII, 336 S. Ill., zahlr. graph. Darst. |
publishDate | 1998 |
publishDateSearch | 1998 |
publishDateSort | 1998 |
publisher | Plenum Press |
record_format | marc |
series2 | Microdevices |
spelling | Yuan, Jiann S. Verfasser aut Semiconductor device physics and simulation J. S. Yuan and J. J. Liou New York [u.a.] Plenum Press 1998 XII, 336 S. Ill., zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Microdevices Semiconducteurs - Simulation par ordinateur ram Transistors à jonctions - Simulation par ordinateur ram Junction transistors Computer simulation Semiconductors Computer simulation Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf pn-Übergang (DE-588)4174949-2 gnd rswk-swf Numerisches Verfahren (DE-588)4128130-5 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s pn-Übergang (DE-588)4174949-2 s Numerisches Verfahren (DE-588)4128130-5 s DE-604 Liou, Juin J. Verfasser aut |
spellingShingle | Yuan, Jiann S. Liou, Juin J. Semiconductor device physics and simulation Semiconducteurs - Simulation par ordinateur ram Transistors à jonctions - Simulation par ordinateur ram Junction transistors Computer simulation Semiconductors Computer simulation Halbleiterbauelement (DE-588)4113826-0 gnd pn-Übergang (DE-588)4174949-2 gnd Numerisches Verfahren (DE-588)4128130-5 gnd |
subject_GND | (DE-588)4113826-0 (DE-588)4174949-2 (DE-588)4128130-5 |
title | Semiconductor device physics and simulation |
title_auth | Semiconductor device physics and simulation |
title_exact_search | Semiconductor device physics and simulation |
title_full | Semiconductor device physics and simulation J. S. Yuan and J. J. Liou |
title_fullStr | Semiconductor device physics and simulation J. S. Yuan and J. J. Liou |
title_full_unstemmed | Semiconductor device physics and simulation J. S. Yuan and J. J. Liou |
title_short | Semiconductor device physics and simulation |
title_sort | semiconductor device physics and simulation |
topic | Semiconducteurs - Simulation par ordinateur ram Transistors à jonctions - Simulation par ordinateur ram Junction transistors Computer simulation Semiconductors Computer simulation Halbleiterbauelement (DE-588)4113826-0 gnd pn-Übergang (DE-588)4174949-2 gnd Numerisches Verfahren (DE-588)4128130-5 gnd |
topic_facet | Semiconducteurs - Simulation par ordinateur Transistors à jonctions - Simulation par ordinateur Junction transistors Computer simulation Semiconductors Computer simulation Halbleiterbauelement pn-Übergang Numerisches Verfahren |
work_keys_str_mv | AT yuanjianns semiconductordevicephysicsandsimulation AT lioujuinj semiconductordevicephysicsandsimulation |