A transient model for the sublimation growth of silicon carbide single crystals:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | German |
| Veröffentlicht: |
Berlin
WIAS
1998
|
| Schriftenreihe: | Weierstraß-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint
443 |
| Beschreibung: | 14 S. Ill. |
Internformat
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| 700 | 1 | |a Bubner, Nikolaus |e Sonstige |4 oth | |
| 830 | 0 | |a Weierstraß-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint |v 443 |w (DE-604)BV009885922 |9 443 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-008389759 | ||
Datensatz im Suchindex
| _version_ | 1804127000992940032 |
|---|---|
| any_adam_object | |
| building | Verbundindex |
| bvnumber | BV012371129 |
| classification_rvk | SI 304 |
| ctrlnum | (OCoLC)75985295 (DE-599)BVBBV012371129 |
| discipline | Mathematik |
| format | Book |
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| id | DE-604.BV012371129 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:26:24Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008389759 |
| oclc_num | 75985295 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR |
| owner_facet | DE-355 DE-BY-UBR |
| physical | 14 S. Ill. |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| publisher | WIAS |
| record_format | marc |
| series | Weierstraß-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint |
| series2 | Weierstraß-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint |
| spelling | A transient model for the sublimation growth of silicon carbide single crystals Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. Berlin WIAS 1998 14 S. Ill. txt rdacontent n rdamedia nc rdacarrier Weierstraß-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint 443 Bubner, Nikolaus Sonstige oth Weierstraß-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint 443 (DE-604)BV009885922 443 |
| spellingShingle | A transient model for the sublimation growth of silicon carbide single crystals Weierstraß-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint |
| title | A transient model for the sublimation growth of silicon carbide single crystals |
| title_auth | A transient model for the sublimation growth of silicon carbide single crystals |
| title_exact_search | A transient model for the sublimation growth of silicon carbide single crystals |
| title_full | A transient model for the sublimation growth of silicon carbide single crystals Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |
| title_fullStr | A transient model for the sublimation growth of silicon carbide single crystals Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |
| title_full_unstemmed | A transient model for the sublimation growth of silicon carbide single crystals Weierstraß-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |
| title_short | A transient model for the sublimation growth of silicon carbide single crystals |
| title_sort | a transient model for the sublimation growth of silicon carbide single crystals |
| volume_link | (DE-604)BV009885922 |
| work_keys_str_mv | AT bubnernikolaus atransientmodelforthesublimationgrowthofsiliconcarbidesinglecrystals |