Symposium on Non-Stoichiometric III-V Compounds:
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | German |
| Veröffentlicht: |
Erlangen
Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität Erlangen-Nürnberg
1998
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| Schriftenreihe: | Physik mikrostrukturierter Halbleiter
6 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | 152 S. Ill., graph. Darst. |
| ISBN: | 3932392124 |
Internformat
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| 490 | 1 | |a Physik mikrostrukturierter Halbleiter |v 6 | |
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Datensatz im Suchindex
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|---|---|
| adam_text | PHYSIK MIKROSTRUKTURIERTER HALBLEITER * HERAUSGEBER: T. MAREK, S. MALZER
UND P. KIESEL V^ SYMPOSIUM ON NON-STOICHIOMETRIC LLL-V COMPOUNDS P.
KIESEL, S. MALZER AND T. MAREK FRIEDRICH-ALEXANDER-UNIVERSITAET
ERLANGEN-NUERNBERG VERLAG: LEHRSTUHL FUER MIKROCHARAKTERISIERUNG
FRIEDRICH-ALEXANDER-UNIVERSITAET ERLANGEN-NUERNBERG 1998 CONTENTS PREFACE
5 CHARACTERISTICS OF AS-RICH GAAS LAYERS CREATED BY ION 7 IMPLANTATION
A. CLAVERIE, G. BEN ASSAYAG, AND C. JAGADISH GROWTH AND CHARACTERIZATION
OF P-DOPED LT-GAAS 15 P. SPECHT, R. ZHAO, R. * LUTZ, AND E. R. WEBER
FORMATION OF AS PRECIPITATES IN BE DOPED NON-STOICHIOMETRIC 23 GAAS AND
THEIR INFLUENCE ON THE ELECTRICAL PROPERTIES M. LUYSBERG, K. THUL, P.
SPECHT, E. R. WEBER, AND Z. LILIENTAL- WEBER CONTROLLING OF ARSENIC
EXCESS AND CLUSTER SPATIAL DISTRIBUTION 29 IN GAAS GROWN BY MBE AT LOW
SUBSTRATE TEMPERATURE BY ISOVALENT IMPURITY DOPING N. A. BERT, V. V.
CHALDYSHEV, A. A. SUVOROVA, YU. G. MUSIKHIN, V. V. PREOBRAZHENSKII, M.
A. PUTYATO, B. R. SEMYAGIN, AND P. WERNER TRANSMISSION ELECTRON
MICROSCOPY STUDIES OF ARSENIC 35 PRECIPITATION IN LOW-TEMPERATURE GAAS
5-DOPED WITH ANTIMONY A. A. SUVOROVA, N. A. BERT, V. V. CHALDYSHEV, AND
P. WERNER SPATIALLY RESOLVED MEASUREMENTS OF LATTICE CONSTANTS IN LOW 41
TEMPERATURE GROWN GAAS LAYERS * SCHUER, M. LEICHT, *. MAREK, H. P.
STRUNK, S. TAUTZ, P. KIESEL, W. GEISSELBRECHT, S. MAELZER, AND G. H.
DEHLER MICROSCOPIC NATURE AND ABUNDANCE OF VACANCIES IN LOW- 47
TEMPERATURE-GROWN GAAS REVEALED BY POSITRON ANNIHILATION F. BOERNER, J.
GEBAUER, R. KRAUSE-REHBERG, AND S. HEHLER REFLECTANCE-DIFFERENCE
SPECTROSCOPY STUDY OF LOW 53 TEMPERATURE GROWN (001) GAAS J. HERFORT, G.
APOSTOLOPOULOS, L. DAEWERITZ, AND K. PLOOG 1 THIN LT-GAAS LAYERS IN P-I-N
DIODES: A NEW METHOD TO 59 CHARACTERIZE THE DEFECTS IN LT-MATERIAL S.
TAUTZ, K.-F. PFEIFFER, H. SEICHTER, P. KIESEL, W. GEISSELBRECHT, *.
SCHUER, *. MAREK, J. P. IBBETSON, AND G. H. DOEHLER BISTABILITY OF CHARGE
ACCUMULATED IN LOW-TEMPERATURE GROWN 67 GAAS V. V. CHALDYSHEV, P. N.
BROUNKOV, A. V. CHERNIGOVSKII, A. A. SUVOROVA, N. A. BERT, S. G.
KONNIKOV, V. V. PREOBRAZHENSKII, M. A. PUTYATO, AND B. R. SEMYAGIN
GALVANOMAGNETIC CHARACTERIZATION OF LT-GAAS LAYERS 73 SEPARATED FROM
THEIR SUBSTRATES J. NOVAK, J. BETKO, M. MORVIC, P. KORDOS AND A. FOERSTER
DEFECT ENGINEERING OF LOW-TEMPERATURE GROWN GALLIUM 79 ARSENID FOR
APPLICATIONS IN ULTRAFAST OPTICS M. HAIMI, U. SIEGNER, F. MORIER-GENOUD,
U. KELLER, M. LUYSBERG, P. SPECHT, AND E. R. WEBER CHARACTERIZATION AND
APPLICATIONS OF LOW TEMPERATURE GROWN- 85 GAAS BASED ON FEMTOSECOND
LASERS T. DEKORSY, G. SEGSCHNEIDER, M. NAGEL, H.-M. HEILIGER, H. KURZ,
R. HEY, K. PLOOG, AND M. LUYSBERG ULTRA-FAST PHOTODETECTORS ON
LOW-TEMPERATURE GROWN MBE 93 GAAS P. KORDOS, M. MARSO, A. FOERSTER, AND
J. DARMO LTG-GAAS GROWN ON SILICON SUBSTRATES FOR THZ-PHOTOMIXER 99
APPLICATIONS * KADOW, A. W. JACKSON, J. P. IBBETSON, A. C. GOSSARD, S.
B. FLEISCHER, AND J. E. BOWERS , * LT-LNP AND DEVICE APPLICATIONS 105 M.
KUNZE, L. H. LEE, B. HENLE, E. KOHN, AND H. Y. CHUNG GIANT
MAGNETORESISTANCE EFFECT IN LOW-TEMPERATURE GROWN 113 GAAS WITH IMBEDDED
MNAS NANOMAGNETS P. J. WELLMANN, J. M. GARCIA; J.-L. FENG, AND P. M.
PETROFF 2 THE EL2-DEFECT IN GAAS - AN OVERVIEW 119 A. WINNACKER GROWTH
OF GAAS-SUBSTRATES WITH LOW DISLOCATION DENSITY BY 127 THE VERTICAL
GRADIENT FREEZE METHOD G. MUELLER, AND J. STENZENBERGER NON-STOICHIOMETRY
AND MESOSCOPIC HOMOGENIZATION BY POST- 135 GROWTH ANNEALING OF
SEMI-INSULATING GAAS M. JURISCH AUTHOR INDEX 149 3
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| genre_facet | Konferenzschrift 1998 Erlangen |
| id | DE-604.BV012295605 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:25:08Z |
| institution | BVB |
| institution_GND | (DE-588)2173841-5 (DE-588)2165114-0 |
| isbn | 3932392124 |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008337147 |
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| physical | 152 S. Ill., graph. Darst. |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| publisher | Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität Erlangen-Nürnberg |
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| series | Physik mikrostrukturierter Halbleiter |
| series2 | Physik mikrostrukturierter Halbleiter |
| spelling | Symposium on Non-Stoichiometric III-V Compounds 1 1998 Erlangen Verfasser (DE-588)2173841-5 aut Symposium on Non-Stoichiometric III-V Compounds Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität Erlangen-Nürnberg. P. Kiesel ... Erlangen Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität Erlangen-Nürnberg 1998 152 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Physik mikrostrukturierter Halbleiter 6 Literaturangaben Gallium arsenide semiconductors Congresses Nichtstöchiometrische Verbindungen (DE-588)4171789-2 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1998 Erlangen gnd-content Drei-Fünf-Halbleiter (DE-588)4150649-2 s Nichtstöchiometrische Verbindungen (DE-588)4171789-2 s DE-604 Kiesel, Peter Sonstige oth Friedrich-Alexander-Universität Erlangen-Nürnberg Lehrstuhl für Mikrocharakterisierung Sonstige (DE-588)2165114-0 oth Physik mikrostrukturierter Halbleiter 6 (DE-604)BV011600531 6 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008337147&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Symposium on Non-Stoichiometric III-V Compounds Physik mikrostrukturierter Halbleiter Gallium arsenide semiconductors Congresses Nichtstöchiometrische Verbindungen (DE-588)4171789-2 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| subject_GND | (DE-588)4171789-2 (DE-588)4150649-2 (DE-588)1071861417 |
| title | Symposium on Non-Stoichiometric III-V Compounds |
| title_auth | Symposium on Non-Stoichiometric III-V Compounds |
| title_exact_search | Symposium on Non-Stoichiometric III-V Compounds |
| title_full | Symposium on Non-Stoichiometric III-V Compounds Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität Erlangen-Nürnberg. P. Kiesel ... |
| title_fullStr | Symposium on Non-Stoichiometric III-V Compounds Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität Erlangen-Nürnberg. P. Kiesel ... |
| title_full_unstemmed | Symposium on Non-Stoichiometric III-V Compounds Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität Erlangen-Nürnberg. P. Kiesel ... |
| title_short | Symposium on Non-Stoichiometric III-V Compounds |
| title_sort | symposium on non stoichiometric iii v compounds |
| topic | Gallium arsenide semiconductors Congresses Nichtstöchiometrische Verbindungen (DE-588)4171789-2 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| topic_facet | Gallium arsenide semiconductors Congresses Nichtstöchiometrische Verbindungen Drei-Fünf-Halbleiter Konferenzschrift 1998 Erlangen |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008337147&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV011600531 |
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