Proceedings of the Fourth International Symposium on High Purity Silicon:
Gespeichert in:
Körperschaft: | |
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Format: | Tagungsbericht Buch |
Sprache: | English |
Veröffentlicht: |
Pennington, NJ
Electrochemical Soc.
1996
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Schriftenreihe: | Electrochemical Society: Proceedings
1996,13 : Electronics |
Schlagworte: | |
Beschreibung: | NT: High purity silicon IV |
Beschreibung: | XII, 586 S. Ill., graph. Darst. |
ISBN: | 1566771560 |
Internformat
MARC
LEADER | 00000nam a2200000 cb4500 | ||
---|---|---|---|
001 | BV012202662 | ||
003 | DE-604 | ||
005 | 20000803 | ||
007 | t | ||
008 | 981015s1996 ad|| |||| 10||| eng d | ||
020 | |a 1566771560 |9 1-56677-156-0 | ||
035 | |a (OCoLC)36240761 | ||
035 | |a (DE-599)BVBBV012202662 | ||
040 | |a DE-604 |b ger |e rakwb | ||
041 | 0 | |a eng | |
049 | |a DE-703 | ||
050 | 0 | |a TK7871.86 | |
082 | 0 | |a 621.3815/2 |2 21 | |
084 | |a UP 3100 |0 (DE-625)146372: |2 rvk | ||
111 | 2 | |a International Symposium on High Purity Silicon |n 4 |d 1996 |c San Antonio, Tex. |j Verfasser |0 (DE-588)5242570-8 |4 aut | |
245 | 1 | 0 | |a Proceedings of the Fourth International Symposium on High Purity Silicon |c ed. C. L. Claeys ... |
246 | 1 | 3 | |a High purity silicon IV |
246 | 1 | 3 | |a High purity silicon |
264 | 1 | |a Pennington, NJ |b Electrochemical Soc. |c 1996 | |
300 | |a XII, 586 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a Electrochemical Society: Proceedings |v 1996,13 : Electronics | |
500 | |a NT: High purity silicon IV | ||
650 | 7 | |a Cristaux - Croissance |2 ram | |
650 | 7 | |a Plaquettes à gravure en semiconducteurs |2 ram | |
650 | 7 | |a Silicium cristallisé |2 ram | |
650 | 4 | |a Crystal growth |v Congresses | |
650 | 4 | |a Semiconductor wafers |v Congresses | |
650 | 4 | |a Silicon crystals |v Congresses | |
650 | 4 | |a Silicon diodes |v Congresses | |
650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Reinststoff |0 (DE-588)4177599-5 |2 gnd |9 rswk-swf |
655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1996 |z San Antonio Tex. |2 gnd-content | |
689 | 0 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
689 | 0 | 1 | |a Reinststoff |0 (DE-588)4177599-5 |D s |
689 | 0 | |5 DE-604 | |
700 | 1 | |a Claeys, Cor |e Sonstige |4 oth | |
830 | 0 | |a Electrochemical Society: Proceedings |v 1996,13 : Electronics |w (DE-604)BV001900941 |9 1996,13 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-008268981 |
Datensatz im Suchindex
_version_ | 1804126819904913408 |
---|---|
any_adam_object | |
author_corporate | International Symposium on High Purity Silicon San Antonio, Tex |
author_corporate_role | aut |
author_facet | International Symposium on High Purity Silicon San Antonio, Tex |
author_sort | International Symposium on High Purity Silicon San Antonio, Tex |
building | Verbundindex |
bvnumber | BV012202662 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.86 |
callnumber-search | TK7871.86 |
callnumber-sort | TK 47871.86 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | UP 3100 |
ctrlnum | (OCoLC)36240761 (DE-599)BVBBV012202662 |
dewey-full | 621.3815/2 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/2 |
dewey-search | 621.3815/2 |
dewey-sort | 3621.3815 12 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Conference Proceeding Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01950nam a2200517 cb4500</leader><controlfield tag="001">BV012202662</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20000803 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">981015s1996 ad|| |||| 10||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1566771560</subfield><subfield code="9">1-56677-156-0</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)36240761</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV012202662</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.86</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">21</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3100</subfield><subfield code="0">(DE-625)146372:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="111" ind1="2" ind2=" "><subfield code="a">International Symposium on High Purity Silicon</subfield><subfield code="n">4</subfield><subfield code="d">1996</subfield><subfield code="c">San Antonio, Tex.</subfield><subfield code="j">Verfasser</subfield><subfield code="0">(DE-588)5242570-8</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Proceedings of the Fourth International Symposium on High Purity Silicon</subfield><subfield code="c">ed. C. L. Claeys ...</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">High purity silicon IV</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">High purity silicon</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Pennington, NJ</subfield><subfield code="b">Electrochemical Soc.</subfield><subfield code="c">1996</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XII, 586 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Electrochemical Society: Proceedings</subfield><subfield code="v">1996,13 : Electronics</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">NT: High purity silicon IV</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Cristaux - Croissance</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Plaquettes à gravure en semiconducteurs</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicium cristallisé</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Crystal growth</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor wafers</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon crystals</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon diodes</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Reinststoff</subfield><subfield code="0">(DE-588)4177599-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1996</subfield><subfield code="z">San Antonio Tex.</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Reinststoff</subfield><subfield code="0">(DE-588)4177599-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Claeys, Cor</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Electrochemical Society: Proceedings</subfield><subfield code="v">1996,13 : Electronics</subfield><subfield code="w">(DE-604)BV001900941</subfield><subfield code="9">1996,13</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-008268981</subfield></datafield></record></collection> |
genre | (DE-588)1071861417 Konferenzschrift 1996 San Antonio Tex. gnd-content |
genre_facet | Konferenzschrift 1996 San Antonio Tex. |
id | DE-604.BV012202662 |
illustrated | Illustrated |
indexdate | 2024-07-09T18:23:31Z |
institution | BVB |
institution_GND | (DE-588)5242570-8 |
isbn | 1566771560 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008268981 |
oclc_num | 36240761 |
open_access_boolean | |
owner | DE-703 |
owner_facet | DE-703 |
physical | XII, 586 S. Ill., graph. Darst. |
publishDate | 1996 |
publishDateSearch | 1996 |
publishDateSort | 1996 |
publisher | Electrochemical Soc. |
record_format | marc |
series | Electrochemical Society: Proceedings |
series2 | Electrochemical Society: Proceedings |
spelling | International Symposium on High Purity Silicon 4 1996 San Antonio, Tex. Verfasser (DE-588)5242570-8 aut Proceedings of the Fourth International Symposium on High Purity Silicon ed. C. L. Claeys ... High purity silicon IV High purity silicon Pennington, NJ Electrochemical Soc. 1996 XII, 586 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electrochemical Society: Proceedings 1996,13 : Electronics NT: High purity silicon IV Cristaux - Croissance ram Plaquettes à gravure en semiconducteurs ram Silicium cristallisé ram Crystal growth Congresses Semiconductor wafers Congresses Silicon crystals Congresses Silicon diodes Congresses Silicium (DE-588)4077445-4 gnd rswk-swf Reinststoff (DE-588)4177599-5 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1996 San Antonio Tex. gnd-content Silicium (DE-588)4077445-4 s Reinststoff (DE-588)4177599-5 s DE-604 Claeys, Cor Sonstige oth Electrochemical Society: Proceedings 1996,13 : Electronics (DE-604)BV001900941 1996,13 |
spellingShingle | Proceedings of the Fourth International Symposium on High Purity Silicon Electrochemical Society: Proceedings Cristaux - Croissance ram Plaquettes à gravure en semiconducteurs ram Silicium cristallisé ram Crystal growth Congresses Semiconductor wafers Congresses Silicon crystals Congresses Silicon diodes Congresses Silicium (DE-588)4077445-4 gnd Reinststoff (DE-588)4177599-5 gnd |
subject_GND | (DE-588)4077445-4 (DE-588)4177599-5 (DE-588)1071861417 |
title | Proceedings of the Fourth International Symposium on High Purity Silicon |
title_alt | High purity silicon IV High purity silicon |
title_auth | Proceedings of the Fourth International Symposium on High Purity Silicon |
title_exact_search | Proceedings of the Fourth International Symposium on High Purity Silicon |
title_full | Proceedings of the Fourth International Symposium on High Purity Silicon ed. C. L. Claeys ... |
title_fullStr | Proceedings of the Fourth International Symposium on High Purity Silicon ed. C. L. Claeys ... |
title_full_unstemmed | Proceedings of the Fourth International Symposium on High Purity Silicon ed. C. L. Claeys ... |
title_short | Proceedings of the Fourth International Symposium on High Purity Silicon |
title_sort | proceedings of the fourth international symposium on high purity silicon |
topic | Cristaux - Croissance ram Plaquettes à gravure en semiconducteurs ram Silicium cristallisé ram Crystal growth Congresses Semiconductor wafers Congresses Silicon crystals Congresses Silicon diodes Congresses Silicium (DE-588)4077445-4 gnd Reinststoff (DE-588)4177599-5 gnd |
topic_facet | Cristaux - Croissance Plaquettes à gravure en semiconducteurs Silicium cristallisé Crystal growth Congresses Semiconductor wafers Congresses Silicon crystals Congresses Silicon diodes Congresses Silicium Reinststoff Konferenzschrift 1996 San Antonio Tex. |
volume_link | (DE-604)BV001900941 |
work_keys_str_mv | AT internationalsymposiumonhighpuritysiliconsanantoniotex proceedingsofthefourthinternationalsymposiumonhighpuritysilicon AT claeyscor proceedingsofthefourthinternationalsymposiumonhighpuritysilicon AT internationalsymposiumonhighpuritysiliconsanantoniotex highpuritysiliconiv AT claeyscor highpuritysiliconiv AT internationalsymposiumonhighpuritysiliconsanantoniotex highpuritysilicon AT claeyscor highpuritysilicon |